Lin‐Bao Luo1, Jingjing Chen1, Mingzheng Wang1, Han Hu1, Chunyan Wu1, Qiang Li1, Li Wang1, Jian‐An Huang2, Feng‐Xia Liang3
1School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices; Hefei University of Technology; Hefei Anhui 230009 PR China
2Center of Super‐Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR PR China
3School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, 230009, PR China
Tóm tắt
Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new n‐type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR light detection. The NIR photodetector (NIRPD) shows obvious rectifying behavior with a turn‐on voltage of 0.6 V. Further device analysis reveals that the photovoltaic NIRPDs are highly sensitive to 850 nm light illumination, with a fast response speed and good spectral selectivity at zero bias voltage. It is also revealed that the NIRPD is capable of monitoring high‐switching frequency optical signals (∼2000 Hz) with a high relative balance. Theoretical simulations based on finite difference time domain (FDTD) analysis finds that the high device performance is partially associated with the optical property, which can trap most incident photons in an efficient way. It is expected that such a self‐driven NIRPD will have potential application in future optoelectronic devices.
