Piezo‐Phototronic Effect Modulated Deep UV Photodetector Based on ZnO‐Ga2O3 Heterojuction Microwire

Advanced Functional Materials - Tập 28 Số 14 - 2018
Mengxiao Chen1,2, Bin Zhao3, Guofeng Hu1,2, Xiaosheng Fang3, Hui Wang4, Lei Wang5, Jun Luo5, Xun Han1,2, Xiandi Wang1,2, Caofeng Pan1,2, Zhong Lin Wang1,6,2
1CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
2School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
3Department of Materials Science, Fudan University Shanghai, 200433, P. R. China
4Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, Beijing 100191, P.R. China
5Center for Electron Microscopy, Tianjin University of Technology, Tianjin, 300384 P. R. China
6School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA

Tóm tắt

AbstractA strain modulated solar‐blinded photodetector (PD) based on ZnO‐Ga2O3 core–shell heterojuction microwire is developed. This PD is highly sensitive to deep UV light centered at 261 nm. It performs ultrahigh sensitivity and spectral selectivity, which can response to rare weak deep UV light (≈1.3 µw cm−2) and almost no response to visible light wavelength ranges. Moreover, by using the piezo‐phototronic effect, the deep UV current response is enhanced to about three times under −0.042% static strain. This is a three way coupling effect among pizoelectric polarization, simiconductor properties, and optical excitation, which exists in noncentral symmetric wurtzite semiconductors such as ZnO, GaN, and CdS. By modulating the energy band diagrams and charge carriers in the junction area upon straining, the optoelectronic processes are regulated. The strain induced piezopotential modulates carrier transport in the heterostructure, which improves the response of the PD, with potential applications for health monitoring, smart systems, deep space exploration, and security communication.

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Tài liệu tham khảo

10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO;2-W

10.1063/1.1534621

10.1021/acsnano.5b00072

10.1002/adma.201605817

10.1021/ja810032t

10.1002/adma.201600884

10.1002/adma.201506472

10.1063/1.1576309

10.1143/JJAP.46.7217

10.1002/adfm.201001140

10.1002/adma.201604049

10.1088/0953-8984/28/43/433001

10.1063/1.1330559

10.1016/j.optmat.2005.03.006

10.1093/nsr/nwt002

10.1021/acs.nanolett.5b00906

10.1016/j.snb.2011.10.023

10.1126/science.1124005

10.1021/acsnano.5b07217

10.1021/nl3014082

10.1002/adma.201502579

Han X., 2016, J. Mater. Chem., 4, 11341

10.1021/nn506427p

10.1002/adma.201503500

10.1021/acsnano.6b01666

10.1002/adma.201501121

10.1021/acsnano.6b07960

10.1016/j.nanoen.2011.09.003

10.1002/adma.201402328

10.1016/j.nantod.2013.11.002

10.1016/j.nanoen.2014.11.037

10.1016/j.nanoen.2014.09.024

10.1002/adma.201404589

10.1002/adfm.201700264

10.1021/nn3035765

10.1021/nn401232k

10.1016/j.proeng.2010.09.106

10.1016/j.nanoen.2012.01.002