Doping and photoelectric properties of C60 films prepared by ionized cluster beam deposition

films by means of ionized cluster beam (ICB) deposition. X-ray diffraction (XRD) measurement showed the C60 films to be polycrystalline. The films show negative resistance–temperature coefficients, and their room-temperature resistivity is greater than 102 Ω cm. The films were implanted with 80-keV phosphorus, BBr3, Ar, and He ions, under doses ranging up to 1016 cm-2. The resistivity of the implanted films decreases with increasing doses. n-type electrical conduction was observed for phosphorus-implanted C60 films. The interaction of impinging ions with C60 clusters was found to force the C60 molecules to disintegrate and the films to amorphize. p-type conduction was observed for the C60 films doped with aluminum by simultaneously sputtering aluminum during deposition. C60/Si structures show heterojunction characteristics that can be influenced by light illumination. The photoelectric properties of the films were found to be improved by doping with aluminum.