Experimental characterization towards an in-fibre integrated silicon slab based all-optical modulator
Tóm tắt
Due to the industrially increasing interest in optics communication the field of all-optical modulation is becoming more and more popular. However, no in-fibre integrated miniaturized devices which provide current solutions were suggested as all-optical modulators with sufficient modulation depth and with low power consumption. In this paper, an all-optical silicon modulator with improved modulation depth is presented. The modulator will be developed as an in-fibre device for optics communication applications. The modulator is a silicon slab, 50 and 470 μm thick which is coated on both sides to get an improved Fabry-Perot resonator for laser beam at wavelength of 1550 nm. The modulator operation is based on the plasma dispersion effect which is induced by a pulsed visible laser beam acting as the pump for the creation of free charge carriers. We have proved the coating withstands high energy fluency of the laser pulse. The different recombination and heat processes are examined. Our silicon based Fabry-Perot resonator increases the intrinsic c-Si finesse to 30. The improved finesse is shown to have significant effect on the modulation depth up to 12 dB. To the best of our knowledge this is the first experimental feasibility study of an all-optical modulator with sufficient modulation depth and with low power consumption which is also an in-fibre integrated miniaturized device based upon Si slab. Extensive experimental and numerical studies presented in this paper examine the influence of thermal effects and the sample parameters on the response time and on the modulation depth and the power consumption of the in-fibre integrated device. Apart from being a modulator, the proposed device can also act as tunable spectral filter.
Tài liệu tham khảo
van de Lagemaat, J., Park, N.-G., Frank, A.J.: A study by electrical impedance and optical modulation techniques. J. Phys. Chem. B 104(9), 2044–2052 (2000)
De Marcellis, A., Palange, E., Janneh, M.: Very high-sensitivity tunable phase detection of light power variations using electrical modulation of Si-photodiode in photovoltaic regime. Electron. Lett. 51(3), 282–284 (2015)
Bruck, R., Vynck, K., Lalanne, P., Mills, B., Thomson, D.J., Mashanovich, G.Z., Reed, G.T., Muskens, O.L.: All-optical spatial light modulator for reconfigurable silicon photonic circuits. Optica 3(4), 396 (2016)
Hochberg, M., Baehr-Jones, T., Wang, G., Shearn, M., Harvard, K., Luo, J., Chen, B., Shi, Z., Lawson, R., Sullivan, P., Jen, A.K.Y., Dalton, L., Scherer, A.: Terahertz all-optical modulation in a silicon–polymer hybrid system. Nat. Mater. 5(9), 703–709 (2006)
Schönenberger, S., Stöferle, T., Moll, N., Mahrt, R.F., Dahlem, M.S., Wahlbrink, T., Bolten, J., Mollenhauer, T., Kurz, H., Offrein, B.J.: Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator. Opt. Express 18(21), 22485–22496 (2010)
Lee, B.G., Biberman, A., Dong, P., Lipson, M., Bergman, K.: All-optical comb switch for multiwavelength message routing in silicon photonic networks. IEEE Photonics Technol. Lett. 20(10), 767–769 (2008)
Liu, A., Rong, H., Paniccia, M., Cohen, O., Hak, D.: Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering. Opt. Express 12(18), 4261 (2004)
Almeida, V.R., Barrios, C.A., Panepucci, R.R., Lipson, M.: All-optical control of light on a silicon chip. Nature 431(7012), 1081–1084 (2004)
Barrios, C.A., de Almeida, V.R., Lipson, M.: Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator. J. Light. Technol. 21(4), 1089–1098 (2003)
Almeida, V.R., Barrios, C.A., Panepucci, R.R., Lipson, M., Foster, M.A., Ouzounov, D.G., Gaeta, A.L.: All-optical switching on a silicon chip. Opt. Lett. 29(24), 2867 (2004)
Della Corte, F.G., Rao, S.: Use of amorphous silicon for active photonic devices. IEEE Trans. Electron Devices 60(5), 1495–1505 (2013)
Narayanan, K., Elshaari, A.W., Preble, S.F.: Broadband all-optical modulation in hydrogenated-amorphous silicon waveguides. Opt. Express 18(10), 9809 (2010)
Rao, S., D’Addio, C., Della Corte, F.G.: All-optical modulation in a CMOS-compatible amorphous silicon-based device. J. Eur. Opt. Soc. Rapid Publ 7(0), 12023 (2012)
Gibbs, H.M., Venkatesan, T.N.C., McCall, S.L., Passner, A., Gossard, A.C., Wiegmann, W.: Optical modulation by optical tuning of a cavity. Appl. Phys. Lett. 34(8), 511–514 (1979)
Aharoni, R., Baharav, O., Bidani, L., Sinvani, M., Elbaz, D., Zalevsky, Z.: All-optical silicon simplified passive modulation. J. Eur. Opt. Soc. - Rapid Publ. 7, 12029 (2012)
Schröder, D.K.: Carrier lifetimes in silicon. IEEE Trans. Electron Devices 44(1), 160–170 (1997)
Soref, R. A., Bennett, B. R.: Kramers-Kronig Analysis Of Electro-Optical Switching In Silicon. SPIE Proc. 0704, 32–37 (1987)
Soref, R.A., Larenzo, J.: All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 μm. IEEE J. Quantum Electron. 22(6), 873–879 (1986)
Soref, R.A., Bennett, B.R.: Electrooptical effects in silicon. IEEE J. Quantum Electron. 23(1), 123–129 (1987)
Moss, T. S., Ellis, B., Burrell, G. J.: Semiconductor Opto-Electronics. Halsted Press Division, Wiley, London (1973)
Cocorullo, G., Rendina, I.: Thermo-optical modulation at 1.5 μm in silicon etalon. Electron. Lett. 28(1), 83–85 (1992)
Dainesi, P., Kung, A., Chabloz, M., Lagos, A., Fluckiger, P., Ionescu, A., Fazan, P., Declerq, M., Renaud, P., Robert, P.: CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology. IEEE Photonics Technol. Lett. 12(6), 660–662 (2000)
Pinhas, H., Bidani, L., Baharav, O., Sinvani, M., Danino, M., Zalevsky, Z.: All optical modulator based on silicon resonator. SPIE 9609, 96090L–96090L–7 (2015)
Rahman, M.Z.: Modeling minority carrier’s recombination lifetime of p-Si solar cell. Int. J. Renew. Energy Res. 2(1), 117–122 (2012)