The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect
Tài liệu tham khảo
Zhang, 2013, T26
Liao, 2015, AIP Adv., 5, 027123, 10.1063/1.4909543
Liao, 2005, Appl. Phys. Lett., 86, 223502, 10.1063/1.1937989
Liao, 2014
Liao, 2015, Appl. Phys. Lett., 107, 092103, 10.1063/1.4930078
K.S. Li, P.G. Chen, T.Y. Lai, C.H. Lin, C. Cheng, C.C. Chen, M.H. Liao, M.H. Lee, M.C. Chen, J.M. Sheih, W.K. Yeh, F.L. Yang, S. Salahuddin, C. Hu. IEEE International Electron Devices Meeting (2015) 22.6.1.
Lee, 2015, IEEE Electron Device Lett., 36, 294, 10.1109/LED.2015.2402517
H.W. Then, S. Dasgupta, M. Radosavljevic, L. Chow, B.C. Kung, G. Dewey, S. Gardner, X. Gao, J. Kavalieros, N. Mukherjee, M. Metz, M. Oliver, R. Pillarisetty, V. Rao, S.H. Sung, G. Yang, R. Chau. IEEE International Electron Devices Meeting (2013) 28.3.1.
Lee, 2013, T28
Yu, 2011, IEEE Electron Device Lett., 34, 446, 10.1109/LED.2011.2106756
J.H. Park, M. Tada, D. Kuzum, P. Kapur, H.Y. Yu, H. Wong. IEEE International Electron Device Meeting (2008) 389.
Engel-Herbert, 2005, J. Appl. Phys., 97, 074504, 10.1063/1.1883308
M.H. Lee, J.C. Lin, Y.T. Wei, C.W. Chen, W.H. Tu, H.K. Zhuang, M. Tang. IEEE International Electron Devices Meeting (2013) 4.5.1.