Characterization of individual defects in MOSFET's

Applied Surface Science - Tập 39 - Trang 500-507 - 1989
A. Karmann1, M. Schulz1
1Institut für Angewandte Physik, Universität Erlangen-Nürnberg, D-8520 Erlangen, Fed. Rep. of Germany

Tài liệu tham khảo

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