Comparison between AlGaN surfaces etched by carbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface

Vacuum - Tập 119 - Trang 264-269 - 2015
Retsuo Kawakami1, Masahito Niibe2, Yoshitaka Nakano3, T. Shirahama1, Shodai Hirai2, Takashi Mukai4
1Institute of Socio-Techno Science Technology, The University of Tokushima, Tokushima 770-8506, Japan
2Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
3Department of Electronics and Information Engineering, Chubu University, Kasugai, Aichi 487-8501, Japan
4Nichia Corporation, Anan, Tokushima 774-0044, Japan

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