Dislocation reduction in GaN crystal by advanced-DEEP

Journal of Crystal Growth - Tập 305 - Trang 377-383 - 2007
Kensaku Motoki1, Takuji Okahisa1, Ryu Hirota1, Seiji Nakahata2, Koji Uematsu1, Naoki Matsumoto2
1Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries Limited, 1-1-1 Koya-kita, Hyogo 6640016, Japan
2Semiconductor Division, Sumitomo Electric Industries Limited, 1-1-1 Koya-kita, Hyogo 6640016, Japan

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