Ultra-fast silicon detectors (UFSD)

H.F.-W. Sadrozinski1, A. Anker1, J. Chen1, V. Fadeyev1, P. Freeman1, Z. Galloway1, B. Gruey1, H. Grabas1, C. John1, Z. Liang1, R. Losakul1, S.N. Mak1, C.W. Ng1, A. Seiden1, N. Woods1, A. Zatserklyaniy1, B. Baldassarri2, N. Cartiglia2, F. Cenna2, M. Ferrero2
1SCIPP, Univ. of California Santa Cruz, CA 95064, USA
2Univ. of Torino and INFN, Torino, Italy

Tài liệu tham khảo

H. F.-W. Sadrozinski, Exploring charge multiplication for fast timing with silicon sensors, 20th RD50 Workshop, Bari, Italy, June 2-6, 2012; 〈https://indico.cern.ch/event/175330/session/8/contribution/18/attachments/225144/315064/RD50_Bari_UFSD_Sadrozinski.pdf〉. Pellegrini, 2014, Nucl. Instrum. Methods, A765, 12, 10.1016/j.nima.2014.06.008 G. Pellegrini, et al., Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications these Proceedings. Sadrozinski, 2014, Nucl. Instrum. Methods, A765, 7, 10.1016/j.nima.2014.05.006 Cenna, 2015, Nucl. Instrum. Methods, A796, 149, 10.1016/j.nima.2015.04.015 B. Baldassari, et al., Signal formation in irradiated silicon detectors, 14th Vienna Conference on Instrumentation, Vienna, Austria, Feb. 15–19, 2016. RD50 collaboration, 〈http://rd50.web.cern.ch/rd50/〉. Kramberger, 2015, Radiation effects in Low Gain Avalanche Detectors after hadron irradiations, JINST, 10, P07006, 10.1088/1748-0221/10/07/P07006 G. Kramberger, et al., Effects of irradiation on LGAD devices with high excess current, 25th RD50 Workshop, CERN, Switzerland, Nov 19–21, 2014; 〈https://indico.cern.ch/event/334251/session/2/contribution/31/attachments/652609/897364/Effect_of_excess_current_to_detector_operation.pdf25th〉 RD50 Workshop, CERN, Switzerland, Nov 11–13, 2014. Cartiglia, 2015, Nucl. Instrum. Methods, A796, 141, 10.1016/j.nima.2015.04.025 A. Seiden, Ultra-Fast Silicon Detectors, PoS(VERTEX2015) 025, 2015.