A coupled plasma and sheath model for high density reactors

IEEE Transactions on Plasma Science - Tập 30 Số 2 - Trang 653-659 - 2002
D. Bose1, T.R. Govindan2, M. Meyyappan2
1NASA Ames Research Center, Eloret Corporation, Moffett Field, CA, USA
2NASA Ames Research Center, Moffett Field, CA, USA

Tóm tắt

We present a coupled plasma and collisionless sheath model for the simulation of high-density plasma processing reactors. Due to inefficiencies in numerical schemes and the resulting computational burden, a coupled multidimensional plasma and sheath simulation has not been possible for gas mixtures and high-density reactors of practical interest. In this work, we demonstrate that with a fully implicit algorithm and a refined computational mesh, a self-consistent simulation of a reactor including both the plasma and sheath is feasible. We discuss the details of the model equations, the importance of ion inertia, and the resulting sheath profiles for argon and chlorine plasmas. We find that at low operating pressures (10-30 mtorr), the charge separation occurs only within a 0.5-mm layer near the surface in a 300 mm inductively coupled plasma etch reactor. A unified simulation eliminates the use of offline or loosely coupled and oversimplified sheath models which generally leads to uncertainties in ion flux and sheath electrical properties.

Từ khóa

#Plasma density #Plasma sheaths #Inductors #Plasma simulation #Plasma applications #Plasma materials processing #Computational modeling #Multidimensional systems #Equations #Argon

Tài liệu tham khảo

10.1116/1.587101 10.1063/1.363169 10.1109/27.467977 meyyappan, 1995, Computational Modeling in Semiconductor Processing 10.1063/1.360776 10.1149/1.1391996 10.1063/1.556036 10.1063/1.364199 10.1063/1.372966 10.1109/27.16552 10.1063/1.365732 10.1063/1.337764 10.1103/PhysRevA.42.2299 10.1063/1.372966 lieberman, 1994, Principals of Plasma Discharges and Materials Processing 10.1063/1.366565