Xiang Chen1, Liu Qing1, Qiliang Wu1, Pingwu Du1, Jun Zhu2, Songyuan Dai2, Shangfeng Yang1
1Hefei National Laboratory for Physical Sciences at Microscale Key Laboratory of Materials for Energy Conversion Chinese Academy of Sciences Department of Materials Science and Engineering Synergetic Innovation Center of Quantum Information & Quantum Physics University of Science and Technology of China (USTC) Hefei 230026 P. R. China
2Key Laboratory of Novel Thin Film Solar Cells, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, 230031, P.R. China
Tóm tắt
Graphitic carbon nitride (g‐C3N4) has been commonly used as photocatalyst with promising applications in visible‐light photocatalytic water‐splitting. Rare studies are reported in applying g‐C3N4 in polymer solar cells. Here g‐C3N4 is applied in bulk heterojunction (BHJ) polymer solar cells (PSCs) for the first time by doping solution‐processable g‐C3N4 quantum dots (C3N4 QDs) in the active layer, leading to a dramatic efficiency enhancement. Upon C3N4 QDs doping, power conversion efficiencies (PCEs) of the inverted BHJ‐PSC devices based on different active layers including poly(3‐hexylthiophene‐2,5‐diyl):[6,6]‐phenyl‐C61‐butyric acid methyl ester (P3HT:PC61BM), poly(4,8‐bis‐alkyloxybenzo(l,2‐b:4,5‐b′)dithiophene‐2,6‐diylalt‐(alkyl thieno(3,4‐b)thiophene‐2‐carboxylate)‐2,6‐diyl):[6,6]‐phenyl C71‐butyric acid methyl ester (PBDTTT‐C:PC71BM), and poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dithiophene‐co‐3‐fluorothieno [3,4‐b]thiophene‐2‐carboxylate] (PTB7‐Th):PC71BM reach 4.23%, 6.36%, and 9.18%, which are enhanced by ≈17.5%, 11.6%, and 11.8%, respectively, compared to that of the reference (undoped) devices. The PCE enhancement of the C3N4 QDs doped BHJ‐PSC device is found to be primarily attributed to the increase of short‐circuit current (Jsc), and this is confirmed by external quantum efficiency (EQE) measurements. The effects of C3N4 QDs on the surface morphology, optical absorption and photoluminescence (PL) properties of the active layer film as well as the charge transport property of the device are investigated, revealing that the efficiency enhancement of the BHJ‐PSC devices upon C3N4 QDs doping is due to the conjunct effects including the improved interfacial contact between the active layer and the hole transport layer due to the increase of the roughness of the active layer film, the facilitated photoinduced electron transfer from the conducting polymer donor to fullerene acceptor, the improved conductivity of the active layer, and the improved charge (hole and electron) transport.
