A Novel Hybrid‐Layered Organic Phototransistor Enables Efficient Intermolecular Charge Transfer and Carrier Transport for Ultrasensitive Photodetection

Advanced Materials - Tập 31 Số 16 - 2019
Yuanhong Gao1, Ya Yi1, Xinwei Wang2, Hong Meng2, Dangyuan Lei3, Xue‐Feng Yu1, Paul K. Chu4, Jia Li1
1Materials Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
2School of Advanced Materials Shenzhen Graduate School Peking University Shenzhen 518055 P. R. China
3Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
4Department of Physics and Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China

Tóm tắt

AbstractThe interfacial charge effect is crucial for high‐sensitivity organic phototransistors (OPTs), but conventional layered and hybrid OPTs have a trade‐off in balancing the separation, transport, and recombination of photogenerated charges, consequently impacting the device performance. Herein, a novel hybrid‐layered phototransistor (HL‐OPT) is reported with significantly improved photodetection performance, which takes advantages of both the charge‐trapping effect (CTE) and efficient carrier transport. The HL‐OPT consisting of 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) as conduction channel, C8‐BTBT:[6,6]‐phenyl‐C61‐butyric acid methyl ester (PC61BM) bulk heterojunction as photoactive layer, and sandwiched MoO3 interlayer as a charge‐transport interlayer exhibits outstanding photodetection characteristics such as a photosensitivity (Ilight/Idark) of 2.9 × 106, photoresponsivity (R) of 8.6 × 103 A W−1, detectivity (D*) of 3.4 × 1014 Jones, and external quantum efficiency of 3 × 106% under weak light illumination of 32 µW cm−2. The mechanism and strategy described here provide new insights into the design and optimization of high‐performance OPTs spanning the ultraviolet and near infrared (NIR) range as well as fundamental issues pertaining to the electronic and photonic properties of the devices.

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Advanced Materials

Tập 31 Số 16

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