A Novel Hybrid‐Layered Organic Phototransistor Enables Efficient Intermolecular Charge Transfer and Carrier Transport for Ultrasensitive Photodetection

Advanced Materials - Tập 31 Số 16 - 2019
Yuanhong Gao1, Ya Yi1, Xinwei Wang2, Hong Meng2, Dangyuan Lei3, Xue‐Feng Yu1, Paul K. Chu4, Jia Li1
1Materials Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
2School of Advanced Materials Shenzhen Graduate School Peking University Shenzhen 518055 P. R. China
3Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
4Department of Physics and Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China

Tóm tắt

Abstract

The interfacial charge effect is crucial for high‐sensitivity organic phototransistors (OPTs), but conventional layered and hybrid OPTs have a trade‐off in balancing the separation, transport, and recombination of photogenerated charges, consequently impacting the device performance. Herein, a novel hybrid‐layered phototransistor (HL‐OPT) is reported with significantly improved photodetection performance, which takes advantages of both the charge‐trapping effect (CTE) and efficient carrier transport. The HL‐OPT consisting of 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) as conduction channel, C8‐BTBT:[6,6]‐phenyl‐C61‐butyric acid methyl ester (PC61BM) bulk heterojunction as photoactive layer, and sandwiched MoO3 interlayer as a charge‐transport interlayer exhibits outstanding photodetection characteristics such as a photosensitivity (Ilight/Idark) of 2.9 × 106, photoresponsivity (R) of 8.6 × 103 A W−1, detectivity (D*) of 3.4 × 1014 Jones, and external quantum efficiency of 3 × 106% under weak light illumination of 32 µW cm−2. The mechanism and strategy described here provide new insights into the design and optimization of high‐performance OPTs spanning the ultraviolet and near infrared (NIR) range as well as fundamental issues pertaining to the electronic and photonic properties of the devices.

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Tài liệu tham khảo

10.1038/ncomms6745

10.1002/adma.200401622

10.1038/nphoton.2009.230

10.1002/adma.201201502

10.1038/nphoton.2017.15

10.1002/adfm.201201848

10.1002/adma.201204979

10.1002/aelm.201500071

10.1002/adma.201502267

10.1021/ja211515b

10.1002/aelm.201500136

10.1039/C7TC01563A

10.1063/1.3115794

10.1038/ncomms15421

10.1038/nnano.2008.206

10.1039/c3nr03989g

10.1002/aelm.201500119

10.1002/adma.201404193

10.1002/adfm.201604163

10.1002/advs.201500435

10.1021/am302765a

10.1002/adma.201404544

10.1002/adfm.201500525

10.1002/aelm.201700284

10.1038/nature01949

10.1038/nphoton.2009.72

10.1021/am404122v

10.1002/adma.200501717

10.1039/c0cs00194e

10.1021/cr100380z

10.1038/nphoton.2016.3

10.1016/j.orgel.2009.05.007

10.1002/adma.201104771

10.1038/nmat3159

10.1002/adom.201500560

10.1038/ncomms6404

10.1002/adma.201402271

10.1002/adfm.200901662

10.1002/adfm.201603605

10.1002/adfm.201604933

10.1038/nnano.2012.187

10.1002/adma.201204488

10.1063/1.95031

10.1002/adma.201503774

10.1021/acs.nanolett.5b00105

10.1038/nnano.2012.60

10.1002/adma.201200293

10.1002/adfm.200800358

10.1002/adma.201100944

10.1002/adma.200400084