Integrated tuning elements for SIS mixers
Tóm tắt
The use of inductive elements to tune out the junction capacitance in SIS mixers is examined. Two new integrated tuning structures are introduced which overcome the limitations of earlier designs.
Tài liệu tham khảo
L. R. D'Addario, “An SIS Mixer for 90–120 GHz with Gain and Wide Bandwidth,”Int. J. Infrared Millimeter Waves, vol. 5, no. 11, pp. 1419–1442, 1984.
A. V. Raisanen, W. R. McGrath, P. L. Richards and F. L. Lloyd, “Broadband RF Match to a Millimeter-Wave SIS Quasi-Particle Mixer,”IEEE Trans. Microwave Theory Tech., vol. MTT-33, no. 12, pp. 1495–1500, Dec. 1985.
S.-K. Pan, A. R. Kerr, J. W. Lamb and M. J. Feldman, “SIS Mixers at 115 GHz Using Nb/Al-Al2O3/Nb Junctions,” Electronics Division Internal Report, No. 268, National Radio Astronomy Observatory, Charlottesville, VA 22903, March 1987.
S.-K. Pan, A. R. Kerr, M. J. Feldman, A. Davidson, A. Kleinsasser, J. Stasiak, R. L. Sandstrom, and W. J. Gallagher, “An SIS Mixer for 85–116 GHz Using Inductively Shunted Edge-Junctions,” in preparation.