Synthesis and characterization of vanadium oxide films by post-oxidation and reactive sputtering

A. Khodin1,2, Hak-In Hwang1, Sung-Min Hong1, V. Zalessky2, T. Leonova2, M. Belov2, E. Outkina3
1Korea Electronics Technology Institute, 68 Yatap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do 463-816, Republic of Korea
2Institute of Electronics, National Academy of Sciences of Belarus, 22 Logoisky Trakt, 220090 Minsk, Belarus
3Belarusian State University of Informatics and Radioelectronics, 6 P. Brovky Street, 220013 Minsk, Belarus

Tài liệu tham khảo

U. Schwingenschlögl, V. Eyert, arXiv:cond-mat/0403689, vol. 1 (2004) pp.1–36. Hanlon, 2002, Thin Solid Films, 405, 234, 10.1016/S0040-6090(01)01753-9 Jiang, 2004 Boriskov, 2002, Tech. Phys. Lett., 28, 406, 10.1134/1.1482750 Gregg, 1997, Appl. Phys. Lett., 71, 3649, 10.1063/1.120469 Muraoka, 2002, J. Phys. Chem. Solids, 63, 965, 10.1016/S0022-3697(02)00098-7 Burkhardt, 2002, Thin Solid Films, 402, 226, 10.1016/S0040-6090(01)01603-0 Chen, 2001, Infrared Phys. Technol., 42, 87, 10.1016/S1350-4495(01)00058-5 Wang, 2005, Sens. Actuators A: Phys., 117, 110, 10.1016/j.sna.2004.06.005 Fisher, 1975, J. Phys. C: Solid State Phys., 8, 2072, 10.1088/0022-3719/8/13/016 Velichko, 2003, Tech. Phys. Lett., 29, 435, 10.1134/1.1579818 Rella, 1999, Thin Solid Films, 349, 254, 10.1016/S0040-6090(99)00142-X Manno, 1997, J. Appl. Phys., 81, 2709, 10.1063/1.363973 Bondarenka, 1998, Phys. Stat. Sol. (a), 169, 289, 10.1002/(SICI)1521-396X(199810)169:2<289::AID-PSSA289>3.0.CO;2-W Hwang, 2005, 389