Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability

American Chemical Society (ACS) - Tập 10 Số 11 - Trang 9663-9668 - 2018
Weiming Lv1, Bingchao Yang2, Bochong Wang3, Wenhui Wan3, Yanfeng Ge3, Ruilong Yang2, Chunxue Hao2, Jianyong Xiang2, Baoshun Zhang1, Zhongming Zeng1, Zhongyuan Liu2
1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou, 215123, China
2State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China
3Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, 066004, China

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10.1021/cr300263a

10.1038/nchem.2015

10.1038/nchem.1589

10.1038/ncomms6678

10.1038/nnano.2014.35

10.1021/nl5008085

10.1021/nl401675k

10.1038/nnano.2013.100

10.1038/nnano.2012.224

10.1002/aelm.201700455

10.1039/C5TC01484K

10.1038/ncomms7647

10.1002/adma.201503678

10.1002/adma.201505730

10.1021/acsami.7b11599

10.1016/j.apsusc.2016.03.119

10.1088/0957-4484/27/6/065708

10.1021/acsami.5b10247

10.1038/ncomms12967

10.1021/acsnano.6b06293

10.1002/adfm.201504187

10.1002/adfm.201602113

10.1038/srep08691

10.1088/2053-1583/2/1/011002

10.1088/2053-1583/3/3/035025

10.1007/s11082-016-0607-x

10.1038/nmat4299

10.1021/nl5032293

10.1038/nchem.2505

10.1021/acsnano.6b04814

10.1038/s41699-017-0025-3

10.1088/0957-4484/26/43/435702

10.1002/anie.201512038

10.1002/adma.201703811

10.1002/pssb.201552586

10.1039/C5CP00916B

10.1038/ncomms7485

10.1021/acs.nanolett.5b03278

10.1002/smll.201600692

10.1038/srep10848

10.1002/adma.201603723

10.1002/anie.201605168

10.1088/2053-1583/1/2/025001

10.1021/nn501226z

10.1039/C7NR03318D