Structure Evolution in Plated Cu Films

Springer Science and Business Media LLC - Tập 863 - Trang B5.2-1-B5.2-6 - 2005
D. P. Field1, NJ Park1,2, PR Besser3, JE Sanchez4
1School of Mech. and Matls. Eng, Washington State University, Pullman, USA
2Kumoh National Institute of Technology, Gumi, Korea
3Advanced Micro Devices, Sunnyvale, USA
4Unity Semiconductor, Sunnyvale, USA

Tóm tắt

Structure evolution in plated Cu films is a function of sublayer stacking, film thickness, plating chemistry, plating parameters, and temperature. The present work examines grain growth and texture evolution in annealed plated Cu on a 25 nm thick Ta sublayer for films of 480 and 750 nm in thickness. These results are compared against those obtained from damascene Cu lines fabricated from a similar process, using a series of line widths. The results show that the initial structures of the plated films are similar, with slightly weaker (111) texture, a higher fraction of twin boundaries, and larger grains in the thicker films. The microstructure of the Cu within the trench constraints is a strong function of line geometry with the propensity for twin boundary development controlling structural evolution.

Tài liệu tham khảo

M.T. Perez-Prado, and J.J. Vlassak, Scripta Mater., 47 (2002) p.817. J. Koike, M. Wada, M. Sanada, and K. Maruyama, Appl. Phys. Lett., 81 (2002) p.1017. A. Sekiguchi, J. Koike, and K. Maruyama, Appl. Phys. Lett., 83 (2003) p.1962. A. Sekiguchi, J. Koike, S. Kamiya, M. Saka, and K. Maruyama, Appl. Phys. Lett., 79 (2001) p.1264. K. Abe, Y. Harada, M. Yoshimaru, and H. Onoda, J. Vac. Sci. Technol., B 22 (2004) p.721. C. Ryu, A.L.S. Loke, T. Nogami, and S.S. Wong, Proc. IEEE Int. Reliability Physics Symp., (1997) p.201. L. Vanasupa, Y.-C. Joo, P. R. Besser, and S. Pramanick, J. Appl. Phys., 85 (1999) p.2583. Y. Ji, T. Zhong, Z. Li, X. Wang, D. Luo, and Y. Xia, Z. Liu, Microelectronic Engineering, 71 (2004) p.182. C.V. Thompson, Annual Review of Materials Science, 20 (1990) p.245. K.-W. Kwon, C. Ryu, R. Sinclair, and S.S. Wong, Appl. Phys. Lett, 71 (1997) p.3069. D.P. Field, O.V. Kononenko, and V.N. Mateev, J. Electr. Mat, 31 (2002) p.40. P.R. Besser, E. Zschech, W. Blum, D. Winter, R. Ortega, S. Rose, M. Herrick, M. Gall, S. Thrasher, M. Tiner, B. Baker, G. Braeckelmann, L. Zhao, C. Simpson, C. Capasso, H. Kawasaki, and E. Weitzman, Journal of Electronic Materials 30 (2001) p.320. T. Muppidi, D.P. Field, J.E. Sanchez, Jr, and C. Woo, Thin Solid Films 471 (2005) p. 63. N.-J. Park, DP Field, MM Nowell, and PR Besser, J. Electronic Matls, (2005) to be published. E.M. Zielinski, R.P. Vinci and J.C. Bravman, J. Appl. Phys, Vol. 76, (1994), p. 4516. F.J. Humphreys, Y. Huang, I. Brough, and C. Harris, J. Microscopy, Vol. 195 (1999), p. 212.