<i>Ab initio</i>molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium

American Physical Society (APS) - Tập 49 Số 20 - Trang 14251-14269
Georg Kresse1, J. Häfner1
1Institut für Theoretische Physik, Technische Universität Wien, Wiedner Hauptstra(27e 8-10, A-1040 Wien, Austria

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