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This method improves useful properties of BaTi0:95V0:05O3 as a capacitor material. It has a high value of electric permittivity ɛ′ in the wide range of temperature and low dielectric losses ɛ″ as well as a low electrical conductivity.",{"EN":90},"Dielectric properties of vanadium doped barium titanate synthesized via high-energy ball milling",{"VOID":92},"[]",{"VOID":94},"Barranco A.P. (Ed.), Advances in ferroelectrics, InTech, Rijeka, 2013.\nHeartling G.H., J. Am. Ceram. Soc., 82 (1999), 797.\nArlt G., Hennings D., De With G., J. Appl. Phys., 58 (1985), 1619.\nTang H., Lin Y., Sodano H.A., Adv. Energy Mater., 3 (2013), 451.\nChoi Y.K., Koshina T., Takeda H., Teranishi T., Tsurumi T., Appl. Phys. Lett., 97 (2010), 212907.\nLee J.K., Hong K.S., Jang J.W., J. Am. Ceram. Soc., 84 (2001), 2001.\nLin T.F., Hu C.T., J. Am. Ceram. Soc., 73 (1990), 531.\nPinceloup P., Courtois C., Leriche A., Thierry B., J. Am. Ceram. Soc., 82 (1999), 3049.\nLiu R., Xuan Y., Jia Y.Q., Mater. Chem. Phys., 57 (1998), 81.\nBorstel G., Eglitis R.I., Kotomin E.A., Heifets E., J. Cryst. Growth, 237 (2002), 687.\nHirose N., Skakle J.M.S., West A.R., J. Electroceram., 3 (1999), 233.\nKajtoch C., Bąk W., Garbarz-glos B., Condens. Matter Phys., 16 (2013), 31702.\nGarbarz-glos B., Piekarczyk W., Smeltere I., Smiga W., Antonova M., Ferroelectrics, 436 (2012), 87.\nAnwar S., Sagdeo P.R., Lalla N.P., Mater. Res. Bull., 43 (2008), 1761.\nYang H., Zhou C., Liu X., Zhou Q., Chen G., Li W., Wang H., J. Eur. Ceram. Soc., 33 (2013), 1177.\nBuscaglia M.T., Buscaglia V., Viviani M., Nanni P., Hanuskova M., J. Eur. Ceram. Soc., 20 (2000), 1997.\nJung Y.S., Na E.S., Paik U., Lee J., Kim J., Mater. Res. Bull., 37 (2002), 1633.\nGarbarz-glos B., Bąk W., Molak A., Kalvane A., Phase Transit., (2012).\nBąk W., Kajtoch C., Starzyk F., Mater. Sci. Eng. B-Adv., 100 (2003), 9.\nMoura F., Simões A.Z., Cavalcante L.S., Zaghete M.A., Varela J.A., Longo E., J. Alloy. Compd., 466 (2008), 115.\nLiu S.J., Zenou V.Y., Sus I., Kotani T., Schilfgaarde M.V., Newman N., Acta Mater., 55 (2007), 2647.\nBandyopadhyay S., Liu S.J., Tang Z.Z., Singh R.K., Newman N., Acta Mater., 57 (2009), 4935.\nWu Y., Nguyen C., Seraji S., Forbess M.J., Limmer S.J., Chou T., Cao G.Z., J. Am. Ceram. Soc., 84 (2001), 2882.\nNoguchi Y., Miyayama M., Appl. Phys. Lett., 78 (2001), 1903.\nZeng J.T., Li Y.X., Yang Q.B., Yin Q.R., Mater. Sci. Eng. B-Adv., 117 (2005), 241.\nCai W., Fu C., Lin Z., Deng X., Ceram. Int., 37 (2011), 3643.\nChoi Y.K., Hoshina T., Takeda H., Teranishi T., Tsurumi T., Appl. Phys. Lett., 97 (2010), 212907.\nWu L., Chure M.CH. Wu K.K., Chang W.CH., Yuang M.J., Liu W.K., Wu M.J., Ceram. Int., 35 (2009), 957.\nBrennan C., Ferroelectrics, 150 (1993), 199.\nShih W.Y., Shih W.H., Aksay I.A., Phys. Rev. B., 50 (1994), 15575.\nHsi C.S., Chen Y.C., Jantunen H., Wu M.J., Lin T.C., J. Eur. Ceram. Soc., 28 (2008), 2581.\nWang W., Cao L., Liu W., Su G., Zhang W., Ceram. Int., 39 (2013) 7127.\nYu M., Hu J., Liu J., Li S., J. Magn. Magn. Mater., 326 (2013), 31.\nKo Y.N., Choi S.H., Kang Y.C., J. Eur. Ceram. Soc., 33 (2013), 1335.\nXin C.R., Zhang J., Liu Y., Zhang Q.L., Yang H., Cheng D., Mater. Res. Bull., 48 (2013), 2220.\nWieczorek-ciurowa K., Dulian P., Bąk W., Kajtoch C., Przem. Chem., 90 (2011), 1400. (in Polish).\nWieczorek-ciurowa K., Dulian P., Nosal A., Domagała J., J. Therm. Anal. Calorim., 101 (2010), 471.\nDulian P., Bąk W., Wieczorek-ciurowa K., Kajtoch C., Mater. 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              \u003Cjats:p>The thermal evolution of the interface formed by room temperature (RT) deposition of Ni atoms (coverage 0.1, 0.5, 1.2 ML) onto a Ge(111)-c(2 × 8) surface has been studied with the use of scanning tunneling microscopy (STM). Atomically resolved STM images revealed that, at RT, the boundaries between the different c(2 × 8) domains acted as nucleation sites for Ni atoms. After annealing the surface with deposited material at 473 to 673 K the formation of nano-sized islands of NixGey compounds was observed. In addition, the occurrence of ring-like structures was recorded. Based on the dual-polarity images the latter were assigned to Ni atoms adsorbed on Ge adatoms.\u003C\u002Fjats:p>","\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\n               \u003Cjats:p>Sự tiến hóa nhiệt của giao diện hình thành từ việc lắng đọng Ni ở nhiệt độ phòng (RT) (độ phủ 0.1, 0.5, 1.2 ML) lên bề mặt Ge(111)-c(2 × 8) đã được nghiên cứu bằng kỹ thuật hiển vi quét tĩnh điện (STM). Ảnh STM với độ phân giải nguyên tử cho thấy, tại RT, ranh giới giữa các miền c(2 × 8) khác nhau hoạt động như các điểm nhân nucleation cho các nguyên tử Ni. Sau khi tôi nhiệt bề mặt với vật liệu đã lắng đọng ở nhiệt độ từ 473 đến 673 K, sự hình thành các đảo nano của các hợp chất NixGey đã được quan sát. Ngoài ra, sự xuất hiện của các cấu trúc dạng vòng cũng đã được ghi nhận. Dựa trên các hình ảnh có độ phân cực đôi, các cấu trúc dạng vòng này được xác định là các nguyên tử Ni hấp phụ trên các nguyên tử Ge adatoms.\u003C\u002Fjats:p>",{"EN":218,"VI":219},"Thermal evolution of the morphology of Ni\u002FGe(111)-c(2 × 8) surface","Tiến hóa nhiệt của hình thái bề mặt Ni\u002FGe(111)-c(2 × 8)",{"VI":221},"",{"VOID":223},"10.2478\u002Fs13536-014-0239-4","2025-01-18T00:45:39.659+00:00",[226],"EN",[228],"VI","https:\u002F\u002Fwww.sciendo.com\u002Farticle\u002F10.2478\u002Fs13536-014-0239-4",[231,258,273,290],{"id":232,"sortIndex":19,"researcher":18,"roles":233,"affiliations":234,"properties":251,"displayName":255,"givenName":18,"familyName":18},"7e2bcb92-62e9-4e18-b834-f9cee678e75c",[],[235,243],{"id":236,"sortIndex":19,"affiliation":237,"properties":18},"0fc0728d-7e55-4adf-a36f-faa648795914",{"id":236,"createTime":18,"updateTime":18,"relativeEntities":238,"slug":18,"properties":239,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":242,"statistic":18},[],{"title":240},{"VI":241},"Institute of Physics, Jan Długosz University, al. 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              \u003Cjats:p>A new route of emulsifier-free emulsion polymerization based on the homogenous mechanism was investigated to prepare magnetic nanoparticles coated by poly (methyl methacrylate) (PMMA). The experimental results confirm the formation of PMMA thin and unique layers covering magnetite cores. The polymer layer thickness, determined from transmission electron microscopy (TEM) images, increases from 4.3 nm to 6.8 nm with increasing mass ratio of MMA to magnetite from 3:1 to 11:1. The increase of the polymer thickness results in the decrease in magnetization saturation of polymeric coated magnetic particles. However, this reduction, no more than 13 emu g−1, is much lower compared to that in other studies with the presence of surfactants or emulsifiers. Besides, the dispersion stability of the prepared particles is significantly improved.\u003C\u002Fjats:p>","\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\n               \u003Cjats:p>Đã nghiên cứu một phương pháp mới trong quá trình polymer hóa nhũ tương không có chất nhũ hóa dựa trên cơ chế đồng nhất để chuẩn bị các hạt nanoparticle từ magnetite được phủ bằng poly (methyl methacrylate) (PMMA). Kết quả thí nghiệm xác nhận sự hình thành của các lớp PMMA mỏng và độc đáo bao phủ cho lõi magnetite. Độ dày của lớp polymer, được xác định từ hình ảnh kính hiển vi điện tử truyền qua (TEM), tăng từ 4.3 nm lên 6.8 nm khi tỷ lệ khối lượng của MMA so với magnetite từ 3:1 đến 11:1. Việc tăng độ dày của polymer dẫn đến sự giảm độ bão hòa từ tính của các hạt từ tính được phủ polymer. Tuy nhiên, sự giảm này không vượt quá 13 emu g−1, thấp hơn nhiều so với các nghiên cứu khác có sự hiện diện của chất tenside hoặc chất nhũ hóa. Bên cạnh đó, độ ổn định phân tán của các hạt được chuẩn bị đã được cải thiện đáng kể.\u003C\u002Fjats:p>",{"EN":356,"VI":357},"A new route of emulsifier-free emulsion polymerization for the preparation of polymer coated magnetite nanoparticles","Một phương pháp mới trong polymer hóa nhũ tương không có chất nhũ hóa để chuẩn bị các hạt nanoparticle magnetite được phủ polymer",{"VI":221},{"VOID":360},"10.2478\u002Fs13536-013-0172-y",[226],[228],"https:\u002F\u002Fwww.sciendo.com\u002Farticle\u002F10.2478\u002Fs13536-013-0172-y",[365,382,397],{"id":366,"sortIndex":19,"researcher":18,"roles":367,"affiliations":368,"properties":377,"displayName":379,"givenName":18,"familyName":18},"afb9a5ba-a637-4f7b-b558-7d37587bd551",[],[369],{"id":370,"sortIndex":19,"affiliation":371,"properties":18},"7a31fb44-7f2b-47f9-8947-f860e3748d9a",{"id":370,"createTime":18,"updateTime":18,"relativeEntities":372,"slug":18,"properties":373,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":376,"statistic":18},[],{"title":374},{"VI":375},"School of Chemical Engineering, Hanoi University of Science and Technology, Hanoi, Vietnam",[],{"title":378,"openalex":380},{"EN":379},"Quan Hai Nguyen",{"VOID":381},"A5040077221",{"id":383,"sortIndex":121,"researcher":18,"roles":384,"affiliations":385,"properties":392,"displayName":394,"givenName":18,"familyName":18},"a43fde1e-c38a-42fc-9a68-b066ff5cf414",[],[386],{"id":370,"sortIndex":19,"affiliation":387,"properties":18},{"id":370,"createTime":18,"updateTime":18,"relativeEntities":388,"slug":18,"properties":389,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":391,"statistic":18},[],{"title":390},{"VI":375},[],{"title":393,"openalex":395},{"EN":394},"Duong Hong Quyen",{"VOID":396},"A5058786529",{"id":398,"sortIndex":63,"researcher":18,"roles":399,"affiliations":400,"properties":407,"displayName":409,"givenName":18,"familyName":18},"7567c1f2-70ac-4aae-964d-b05bfdaff247",[],[401],{"id":370,"sortIndex":19,"affiliation":402,"properties":18},{"id":370,"createTime":18,"updateTime":18,"relativeEntities":403,"slug":18,"properties":404,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":406,"statistic":18},[],{"title":405},{"VI":375},[],{"title":408,"openalex":410},{"EN":409},"Thái Hoàng",{"VOID":411},"A5006663747",{"url":18,"publisher":413,"properties":441},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":414,"slug":10,"properties":415,"entityType":16,"verifyStatus":17,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":19,"subjectFields":418,"manageAffiliations":422,"indexDatabases":428,"url":18,"thumbnailPath":18,"statistic":436,"gsStatistic":18,"type":18,"analyzePriority":18},[],{"title":416,"eissn":417},{"EN":13},{"VOID":15},[419],{"id":22,"createTime":18,"updateTime":18,"relativeEntities":420,"label":421,"description":18,"parentId":18,"standard":18,"scholarHubFieldId":18},[],{"EN":25},[423],{"id":28,"createTime":18,"updateTime":18,"relativeEntities":424,"slug":18,"properties":425,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":427,"statistic":18},[],{"title":426},{"EN":32},[],[429],{"id":36,"indexDatabase":430,"url":49,"indexYears":18,"academicFieldIds":435,"indexDatabaseRanking":18},{"id":38,"createTime":18,"updateTime":18,"relativeEntities":431,"label":432,"description":433,"key":45,"publicationTags":434,"standard":18},[],{"EN":41,"VI":41},{"EN":43,"VI":44},[47,48],[51],{"impactFactor":19,"impactFactorByYear":437,"i10Index":58,"i10IndexLast5Year":19,"totalPublication":59,"totalPublicationByYear":438,"totalCitation":65,"totalCitationByYear":439,"totalCitationPerPublication":70,"totalCitationPerPublicationByYear":440,"hindexLast5Year":75,"hindex":75},{"2015":54,"2016":55,"2017":56,"2018":57},{"2013":61,"2014":62,"2015":63,"2016":64},{"2014":67,"2015":68,"2016":69},{"2014":72,"2015":73,"2016":74},{"issue":442,"pages":444,"volume":446},{"VOID":443},"2",{"VOID":445},"264-271",{"VOID":196},5,{"total":447,"publishYear":198,"statisticByYear":449},{"2015":121,"2017":121,"2019":121,"2020":121,"2022":121},"2014-06-01",[47],[],{"id":454,"createTime":455,"updateTime":456,"relativeEntities":457,"slug":458,"properties":459,"entityType":97,"verifyStatus":98,"verifyTime":455,"verifyNote":100,"languages":473,"translateLanguages":474,"viewCount":19,"primaryUrl":475,"fullTextUrl":18,"authors":476,"publicationType":162,"publisherRelationship":496,"citationCount":532,"citationInfo":533,"publishDate":536,"publishYear":534,"citationAnalyzeStatus":17,"lastCitationAnalyze":18,"indexDatabases":537,"openAccess":18,"references":538,"isForceReanalyzing":202},"8df383be-ea48-4adb-91d4-f026d4fd1226","2024-09-22T14:33:21.593+00:00","2025-02-26T19:35:43.511+00:00",[],"The-structural-studies-of-aluminosilicate-gels-and-thin-films-synthesized-by-the-sol-gel-method-using-different-Al2O3-and-SiO2-precursors",{"openalex":460,"mag":462,"abstract":464,"title":467,"keywords":470,"doi":471},{"VOID":461},"W2542585535",{"VOID":463},"2542585535",{"EN":465,"VI":466},"\u003Cjats:title>Abstract\u003C\u002Fjats:title>\u003Cjats:p>Aluminosilicate materials were obtained by sol-gel method, using different Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> and SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> precursors in order to prepare sols based on water and organic solvents. As SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> precursors, Aerosil 200\u003Cjats:sup>TM\u003C\u002Fjats:sup> and tetraethoxysilane TEOS: Si(OC\u003Cjats:sub>2\u003C\u002Fjats:sub>H\u003Cjats:sub>5\u003C\u002Fjats:sub>)\u003Cjats:sub>4\u003C\u002Fjats:sub> were applied, while Disperal\u003Cjats:sup>TM\u003C\u002Fjats:sup> and aluminium secondary butoxide ATSB: Al(OC\u003Cjats:sub>4\u003C\u002Fjats:sub>H\u003Cjats:sub>9\u003C\u002Fjats:sub>)\u003Cjats:sub>3\u003C\u002Fjats:sub> were used for Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> ones. Bulk samples were obtained by heating gels at 500 °C, 850 °C and at 1150 °C in air, while thin films were synthesized on carbon, steel and alundum (representing porous ceramics) substrates by the dip coating method. Thin films were annealed in air (steel and alundum) and in argon (carbon) at different temperatures, depending on the substrate type. The samples were synthesized as gels and coatings of the composition corresponding the that of 3Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub>·2SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> mullite because of the specific valuable properties of this material. The structure of the annealed bulk samples and coatings was studied by FT-IR spectroscopy and XRD method (in standard and GID configurations). Additionally, the electron microscopy (SEM) together with EDS microanalysis were applied to describe the morphology and the chemical composition of thin films. The analysis of FT-IR spectra and X-ray diffraction patterns of bulk samples revealed the presence of γ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> and δ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> phases, together with the small amount of SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> in the particulate samples. This observation was confirmed by the bands due to vibrations of Al–O bonds occurring in γ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> and δ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> structures, in the range of 400 to 900 cm\u003Cjats:sup>−1\u003C\u002Fjats:sup>. The same phases (γ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> and δ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O) were observed in the deposited coatings, but the presence of particulate ones strongly depended on the type of Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> and SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> precursor and on the heat treatment temperature. All thin films contained considerable amounts of amorphous phase.\u003C\u002Fjats:p>","\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\u003Cjats:p>Các vật liệu aluminosilicate đã được thu được bằng phương pháp sol-gel, sử dụng các tiền chất Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> và SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> khác nhau nhằm chuẩn bị các dung dịch dựa trên nước và dung môi hữu cơ. Các tiền chất SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> được áp dụng là Aerosil 200\u003Cjats:sup>TM\u003C\u002Fjats:sup> và tetraethoxysilane TEOS: Si(OC\u003Cjats:sub>2\u003C\u002Fjats:sub>H\u003Cjats:sub>5\u003C\u002Fjats:sub>)\u003Cjats:sub>4\u003C\u002Fjats:sub>, trong khi Disperal\u003Cjats:sup>TM\u003C\u002Fjats:sup> và aluminium secondary butoxide ATSB: Al(OC\u003Cjats:sub>4\u003C\u002Fjats:sub>H\u003Cjats:sub>9\u003C\u002Fjats:sub>)\u003Cjats:sub>3\u003C\u002Fjats:sub> được sử dụng cho các tiền chất Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub>. Các mẫu khối đã được thu được bằng cách nung gels ở 500 °C, 850 °C và 1150 °C trong không khí, trong khi các màng mỏng được tổng hợp trên các nền carbon, thép và alundum (đại diện cho gốm xốp) bằng phương pháp nhúng. Các màng mỏng đã được tôi trong không khí (thép và alundum) và trong argon (carbon) ở nhiệt độ khác nhau, tùy thuộc vào loại nền. Các mẫu được tổng hợp dưới dạng gel và lớp phủ có thành phần tương ứng với hỗn hợp 3Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub>·2SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> mullite do những đặc tính quý giá đặc trưng của vật liệu này. Cấu trúc của các mẫu khối đã tôi và lớp phủ được nghiên cứu bằng phương pháp phổ FT-IR và phương pháp XRD (trong cấu hình tiêu chuẩn và GID). Ngoài ra, kính hiển vi điện tử (SEM) cùng với phân tích vi mô EDS đã được áp dụng để mô tả hình thái và thành phần hóa học của các màng mỏng. Phân tích phổ FT-IR và các mẫu phản xạ tia X của các mẫu khối cho thấy sự hiện diện của các pha γ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> và δ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub>, cùng với một lượng nhỏ SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> trong các mẫu phân tán. Quan sát này được xác nhận bởi các dải liên quan đến độ dao động của các liên kết Al–O xảy ra trong các cấu trúc γ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> và δ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub>, trong khoảng từ 400 đến 900 cm\u003Cjats:sup>−1\u003C\u002Fjats:sup>. Các pha tương tự (γ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> và δ-Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O) cũng được quan sát trong các lớp phủ đã được lắng đọng, nhưng sự hiện diện của các mẫu phân tán phụ thuộc mạnh vào loại tiền chất Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> và SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> và nhiệt độ xử lý nhiệt. Tất cả các màng mỏng đều chứa một lượng đáng kể pha vô định hình.\u003C\u002Fjats:p>",{"EN":468,"VI":469},"The structural studies of aluminosilicate gels and thin films synthesized by the sol-gel method using different Al2O3 and SiO2 precursors","Nghiên cứu cấu trúc của gel và màng mỏng aluminosilicate được tổng hợp bằng phương pháp sol-gel sử dụng các tiền chất Al2O3 và SiO2 khác nhau",{"VI":221},{"VOID":472},"10.1515\u002Fmsp-2015-0109",[226],[228],"https:\u002F\u002Fcontent.sciendo.com\u002Fview\u002Fjournals\u002Fmsp\u002F33\u002F4\u002Farticle-p732.xml",[477],{"id":478,"sortIndex":19,"researcher":18,"roles":479,"affiliations":480,"properties":489,"displayName":493,"givenName":18,"familyName":18},"22812f53-a53f-4035-8f82-d8d6e7673664",[],[481],{"id":482,"sortIndex":19,"affiliation":483,"properties":18},"cd155f4a-bcf0-4ae8-9d7f-c4bb445292f7",{"id":482,"createTime":18,"updateTime":18,"relativeEntities":484,"slug":18,"properties":485,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":488,"statistic":18},[],{"title":486},{"EN":487},"1AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Kraków, Poland",[],{"orcid":490,"title":492,"openalex":494},{"VOID":491},"https:\u002F\u002Forcid.org\u002F0000-0002-8586-7740",{"EN":493},"Anna 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1992, , Cryst Solids, 147",{},{"id":18,"text":543,"url":18,"identifiers":544},"AdamczykA, 2008, , Ceramics, 103",{},{"id":18,"text":546,"url":18,"identifiers":547},"ChenZ, 2005, , Int, 31",{},{"id":18,"text":549,"url":18,"identifiers":550},"MazelF, 2002, , Eur Ceram Soc, 22",{},{"id":18,"text":552,"url":18,"identifiers":553},"XiongH, 2006, , Sci Eng A Struct, 433",{},{"id":18,"text":555,"url":18,"identifiers":556},"VollD, 2002, , Spectrosc, 30",{},{"id":18,"text":558,"url":18,"identifiers":559},"TiwariS, 2007, , Coat Tech, 201",{},{"id":18,"text":561,"url":18,"identifiers":562},"ColombanP, 1989, , Mater Sci, 24",{},{"id":18,"text":564,"url":18,"identifiers":565},"YoldasB, 1992, , Am Ceram Soc, 65",{},{"id":18,"text":567,"url":18,"identifiers":568},"PadmajaP, 2001, , J Inorg Mater, 3, 693, 10.1016\u002FS1466-6049(01)00189-1",{"doi":569},"10.1016\u002FS1466-6049(01)00189-1",{"id":18,"text":571,"url":18,"identifiers":572},"RichardsV, 2005, , Am Ceram Soc, 88",{},{"id":18,"text":574,"url":18,"identifiers":575},"Jacas, 2005, , RodriguezA ParienteP CarreteroI RodriguezJ VélezM Lett, 59",{},{"id":18,"text":577,"url":18,"identifiers":578},"LopezT, 1989, , Cryst Solids, 108",{},{"id":18,"text":580,"url":18,"identifiers":581},"AokiY, 2012, , Chem Chem Phys, 14, 2735, 10.1039\u002Fc2cp23821g",{"doi":582},"10.1039\u002Fc2cp23821g",{"id":18,"text":584,"url":18,"identifiers":585},"YoldasB, 1975, , Bull, 54, 285",{},{"id":18,"text":587,"url":18,"identifiers":588},"ChenY, 2001, , Eur Ceram Soc, 21",{},{"id":18,"text":590,"url":18,"identifiers":591},"MozgawaW, 2009, , Mol Struct, 924",{},{"id":18,"text":593,"url":18,"identifiers":594},"AdamczykA, 2008, , Chim Sci Mat, 33, 227",{},{"id":18,"text":596,"url":18,"identifiers":597},"GutmanE, 2005, , Res Technol, 40, 114, 10.1002\u002Fcrat.200410314",{"doi":598},"10.1002\u002Fcrat.200410314",{"id":18,"text":600,"url":18,"identifiers":601},"WeiW, 1988, , Am Ceram Soc, 71",{},{"id":603,"createTime":604,"updateTime":605,"relativeEntities":606,"slug":607,"properties":608,"entityType":97,"verifyStatus":98,"verifyTime":622,"verifyNote":100,"languages":623,"translateLanguages":624,"viewCount":19,"primaryUrl":625,"fullTextUrl":18,"authors":626,"publicationType":162,"publisherRelationship":695,"citationCount":532,"citationInfo":724,"publishDate":450,"publishYear":198,"citationAnalyzeStatus":17,"lastCitationAnalyze":18,"indexDatabases":726,"openAccess":18,"references":727,"isForceReanalyzing":202},"a8c1f9d2-4624-4916-843f-cd16b95689f0","2024-04-16T03:44:08.725+00:00","2025-02-26T19:34:33.047+00:00",[],"Pd-GaN-0001-interface-properties",{"openalex":609,"mag":611,"abstract":613,"title":616,"keywords":619,"doi":620},{"VOID":610},"W2041215107",{"VOID":612},"2041215107",{"EN":614,"VI":615},"\u003Cjats:title>Abstract\u003C\u002Fjats:title>\n               \u003Cjats:p>This report concerns the properties of an interface formed between Pd films deposited onto the surface of (0001)-oriented n-type GaN at room temperature (RT) under ultrahigh vacuum. The surface of clean substrate and the stages of Pd-film growth were characterized in situ by X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), ultraviolet photoelectron spectroscopy (UPS), and low energy electron diffraction (LEED).\u003C\u002Fjats:p>\n               \u003Cjats:p>As-deposited Pd films are grainy, cover the substrate surface uniformly and reproduce its topography. Electron affinity of the clean n-GaN surface amounts to 3.1 eV. The work function of the Pd-film is equal to 5.3 eV. No chemical interaction has been found at the Pd\u002FGaN interface formed at RT. The Schottky barrier height of the Pd\u002FGaN contact is equal to 1.60 eV.\u003C\u002Fjats:p>","\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\n               \u003Cjats:p>Báo cáo này đề cập đến các tính chất của một giao diện hình thành giữa các lớp Pd được lắng đọng lên bề mặt GaN n-type có hướng (0001) ở nhiệt độ phòng (RT) dưới môi trường chân không siêu cao. Bề mặt của cơ chất sạch và các giai đoạn phát triển của lớp phim Pd đã được đặc trưng in situ bởi quang phổ điện tử tia X (XPS), hiển vi quét hầm (STM), quang phổ điện tử tia cực tím (UPS) và tán xạ điện tử năng lượng thấp (LEED).\u003C\u002Fjats:p>\n               \u003Cjats:p>Các lớp phim Pd lắng đọng có cấu trúc hạt, bao phủ đồng nhất bề mặt cơ chất và tái tạo địa hình của nó. Độ liên kết điện của bề mặt n-GaN sạch đạt 3.1 eV. Hàm công của lớp phim Pd bằng 5.3 eV. Không phát hiện tương tác hóa học nào tại giao diện Pd\u002FGaN hình thành ở nhiệt độ phòng. Chiều cao rào cản Schottky của tiếp xúc Pd\u002FGaN bằng 1.60 eV.\u003C\u002Fjats:p>",{"EN":617,"VI":618},"Pd\u002FGaN(0001) interface properties","Tính chất giao diện Pd\u002FGaN(0001)",{"VI":221},{"VOID":621},"10.2478\u002Fs13536-013-0183-8","2024-12-07T09:13:31.710+00:00",[226],[228],"https:\u002F\u002Fwww.sciendo.com\u002Farticle\u002F10.2478\u002Fs13536-013-0183-8",[627,646,663,678],{"id":628,"sortIndex":19,"researcher":18,"roles":629,"affiliations":630,"properties":639,"displayName":643,"givenName":18,"familyName":18},"fa2daf26-2cd5-48ed-9214-7ae7e1c08fe6",[],[631],{"id":632,"sortIndex":19,"affiliation":633,"properties":18},"e699978b-11e2-416d-847c-832b64cfe4cd",{"id":632,"createTime":18,"updateTime":18,"relativeEntities":634,"slug":18,"properties":635,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":638,"statistic":18},[],{"title":636},{"EN":637},"University of Wroclaw,",[],{"orcid":640,"title":642,"openalex":644},{"VOID":641},"https:\u002F\u002Forcid.org\u002F0000-0002-2671-8008",{"EN":643},"M. 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Ciszewski",{"VOID":694},"A5075427645",{"url":18,"publisher":696,"properties":18},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":697,"slug":10,"properties":698,"entityType":16,"verifyStatus":17,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":19,"subjectFields":701,"manageAffiliations":705,"indexDatabases":711,"url":18,"thumbnailPath":18,"statistic":719,"gsStatistic":18,"type":18,"analyzePriority":18},[],{"title":699,"eissn":700},{"EN":13},{"VOID":15},[702],{"id":22,"createTime":18,"updateTime":18,"relativeEntities":703,"label":704,"description":18,"parentId":18,"standard":18,"scholarHubFieldId":18},[],{"EN":25},[706],{"id":28,"createTime":18,"updateTime":18,"relativeEntities":707,"slug":18,"properties":708,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":710,"statistic":18},[],{"title":709},{"EN":32},[],[712],{"id":36,"indexDatabase":713,"url":49,"indexYears":18,"academicFieldIds":718,"indexDatabaseRanking":18},{"id":38,"createTime":18,"updateTime":18,"relativeEntities":714,"label":715,"description":716,"key":45,"publicationTags":717,"standard":18},[],{"EN":41,"VI":41},{"EN":43,"VI":44},[47,48],[51],{"impactFactor":19,"impactFactorByYear":720,"i10Index":58,"i10IndexLast5Year":19,"totalPublication":59,"totalPublicationByYear":721,"totalCitation":65,"totalCitationByYear":722,"totalCitationPerPublication":70,"totalCitationPerPublicationByYear":723,"hindexLast5Year":75,"hindex":75},{"2015":54,"2016":55,"2017":56,"2018":57},{"2013":61,"2014":62,"2015":63,"2016":64},{"2014":67,"2015":68,"2016":69},{"2014":72,"2015":73,"2016":74},{"total":532,"publishYear":198,"statisticByYear":725},{"2015":121,"2016":121,"2017":63,"2019":121,"2020":63,"2021":121,"2023":121},[47],[],{"id":729,"createTime":730,"updateTime":731,"relativeEntities":732,"slug":733,"properties":734,"entityType":97,"verifyStatus":98,"verifyTime":749,"verifyNote":100,"languages":750,"translateLanguages":751,"viewCount":19,"primaryUrl":752,"fullTextUrl":18,"authors":753,"publicationType":162,"publisherRelationship":874,"citationCount":532,"citationInfo":908,"publishDate":450,"publishYear":198,"citationAnalyzeStatus":17,"lastCitationAnalyze":18,"indexDatabases":910,"openAccess":18,"references":911,"isForceReanalyzing":202},"b284f2f2-211e-4bd5-b4f3-f279809c4c96","2024-04-18T10:33:34.703+00:00","2025-02-26T19:33:35.773+00:00",[],"Structural-and-elastic-properties-of-TiN-and-AlN-compounds-first-principles-study",{"openalex":735,"mag":737,"abstract":739,"title":742,"keywords":745,"doi":747},{"VOID":736},"W2059147992",{"VOID":738},"2059147992",{"EN":740,"VI":741},"\u003Cjats:title>Abstract\u003C\u002Fjats:title>\n               \u003Cjats:p>First-principles calculations of the lattice constants, bulk modulus, pressure derivatives of the bulk modulus and elastic constants of AlN and TiN compounds in rock-salt (B1) and wurtzite (B4) structures are presented. We have used the fullpotential linearized augmented plane wave (FP-LAPW) method within the density functional theory (DFT) in the generalized gradient approximation (GGA) for the exchange-correlation functional. Moreover, the elastic properties of cubic TiN and hexagonal AlN, including elastic constants, bulk and shear moduli are determined and compared with previous experimental and theoretical data. Our results show that the structural transition at 0 K from wurtzite to rock-salt phase occurs at 10 GPa and −26 GPa for AlN and TiN, respectively. These results are consistent with those of other studies found in the literature.\u003C\u002Fjats:p>","\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\n               \u003Cjats:p>Các tính toán từ nguyên lý đầu tiên về các hằng số mạng, mô đun khối, đạo hàm áp suất của mô đun khối và các hằng số đàn hồi của các hợp chất AlN và TiN trong cấu trúc muối đá (B1) và wurtzite (B4) được trình bày. Chúng tôi đã sử dụng phương pháp sóng phẳng đã gia tăng tuyến tính với tiềm năng đầy đủ (FP-LAPW) trong lý thuyết hàm mật độ (DFT) theo xấp xỉ gradient tổng quát (GGA) cho hàm trao đổi - tương quan. Hơn nữa, các thuộc tính đàn hồi của TiN lập phương và AlN lục giác, bao gồm các hằng số đàn hồi, mô đun khối và mô đun cắt được xác định và so sánh với dữ liệu thực nghiệm và lý thuyết trước đó. Kết quả của chúng tôi cho thấy rằng sự chuyển tiếp cấu trúc ở 0 K từ pha wurtzite sang pha muối đá xảy ra ở 10 GPa và -26 GPa cho AlN và TiN, tương ứng. Những kết quả này nhất quán với các nghiên cứu khác được tìm thấy trong tài liệu.",{"EN":743,"VI":744},"Structural and elastic properties of TiN and AlN compounds: first-principles study","Tính chất cấu trúc và đàn hồi của hợp chất TiN và AlN: nghiên cứu từ nguyên lý đầu tiên",{"VI":746},"TiN, AlN, tính chất cấu trúc, hằng số đàn hồi, mô đun khối",{"VOID":748},"10.2478\u002Fs13536-013-0184-7","2025-02-26T08:58:12.926+00:00",[226],[228],"https:\u002F\u002Fwww.sciendo.com\u002Farticle\u002F10.2478\u002Fs13536-013-0184-7",[754,771,788,803,818,835,854],{"id":755,"sortIndex":19,"researcher":18,"roles":756,"affiliations":757,"properties":766,"displayName":768,"givenName":18,"familyName":18},"a1c8521d-9b65-44ca-84b0-4ea0726009da",[],[758],{"id":759,"sortIndex":19,"affiliation":760,"properties":18},"af4a145d-f81b-4b0b-ad2a-52030b808219",{"id":759,"createTime":18,"updateTime":18,"relativeEntities":761,"slug":18,"properties":762,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":765,"statistic":18},[],{"title":763},{"VI":764},"Laboratory physico-chemistry of advanced materials, University of Djillali Liabes, BP 89, Sidi-Bel-Abbes, 22000, Algeria",[],{"title":767,"openalex":769},{"EN":768},"Meriem Fodil",{"VOID":770},"A5000767498",{"id":772,"sortIndex":121,"researcher":18,"roles":773,"affiliations":774,"properties":783,"displayName":785,"givenName":18,"familyName":18},"49ddd61f-1dae-444e-b78d-1addcc20ae1f",[],[775],{"id":776,"sortIndex":19,"affiliation":777,"properties":18},"9306d193-c225-478d-948a-fbfc46d838fa",{"id":776,"createTime":18,"updateTime":18,"relativeEntities":778,"slug":18,"properties":779,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":782,"statistic":18},[],{"title":780},{"VI":781},"Laboratoire de Physique Quantique de la Matière et de la Modélisation Mathématique (LPQ3M), Faculté des Sciences, Université de Mascara, Mascara 29000, Algeria",[],{"title":784,"openalex":786},{"EN":785},"Amine Mounir",{"VOID":787},"A5015004225",{"id":789,"sortIndex":63,"researcher":18,"roles":790,"affiliations":791,"properties":798,"displayName":800,"givenName":18,"familyName":18},"5a7bd447-9998-4f4b-b654-53acec13d901",[],[792],{"id":759,"sortIndex":19,"affiliation":793,"properties":18},{"id":759,"createTime":18,"updateTime":18,"relativeEntities":794,"slug":18,"properties":795,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":797,"statistic":18},[],{"title":796},{"VI":764},[],{"title":799,"openalex":801},{"EN":800},"M. 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The as-grown MWNTs were characterized by scanning electron microscope (SEM), high resolution transmission electron microscope (HRTEM), X-ray diffraction analysis (XRD) and Raman spectral studies. The HRTEM and Raman spectroscopic studies confirmed the evolution of MWNTs with the outer diameter between 20 and 40 nm. The possibility of using as-grown MWNTs as an adsorbent for removal of As (V) ions from drinking water was studied. Adsorption isotherm data were interpreted by the Langmuir and Freundlich equations. Kinetic data were studied using Elovich, pseudo-first order and pseudo-second order equations in order to elucidate the reaction mechanism.\u003C\u002Fjats:p>","\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\n               \u003Cjats:p>Ống nano carbon nhiều lớp đã được tổng hợp ở các nhiệt độ khác nhau dao động từ 550 °C đến 750 °C trên chất xúc tác Fe-Mo hỗ trợ silica bằng phương pháp lắng đọng hơi hóa học, sử dụng dầu Cymbopogen flexuous dưới môi trường nitơ. Các MWNTs thu được đã được đặc trưng hóa bằng kính hiển vi điện tử quét (SEM), kính hiển vi điện tử truyền qua độ phân giải cao (HRTEM), phân tích nhiễu xạ X-ray (XRD) và các nghiên cứu phổ Raman. Các nghiên cứu HRTEM và phổ Raman xác nhận sự phát triển của MWNTs với đường kính ngoài nằm trong khoảng từ 20 đến 40 nm. Khả năng sử dụng các MWNTs thu được làm chất hấp phụ để loại bỏ các ion As (V) từ nước uống đã được nghiên cứu. Dữ liệu đồng phương hấp phụ đã được giải thích bằng các phương trình Langmuir và Freundlich. Dữ liệu động học đã được nghiên cứu bằng cách sử dụng các phương trình Elovich, giả định bậc nhất và giả định bậc hai để làm sáng tỏ cơ chế phản ứng.\u003C\u002Fjats:p>",{"EN":927,"VI":928},"Optimization of growth temperature of multi-walled carbon nanotubes fabricated by chemical vapour deposition and their application for arsenic removal","Tối ưu hóa nhiệt độ tăng trưởng của ống nano carbon nhiều lớp được chế tạo bằng phương pháp lắng đọng hơi hóa học và ứng dụng của chúng trong việc loại bỏ arsenic",{"VI":930},"ống nano carbon nhiều lớp, lắng đọng hơi hóa học, hấp phụ arsenic, động học hấp phụ, nghiên cứu phổ Raman",{"VOID":932},"10.2478\u002Fs13536-014-0235-8","2025-01-16T03:52:07.902+00:00",[226],[228],"https:\u002F\u002Fwww.sciendo.com\u002Farticle\u002F10.2478\u002Fs13536-014-0235-8",[938,955,974,991,1008],{"id":939,"sortIndex":19,"researcher":18,"roles":940,"affiliations":941,"properties":950,"displayName":952,"givenName":18,"familyName":18},"57386bf4-1d5a-48b3-9814-189f6a8c0670",[],[942],{"id":943,"sortIndex":19,"affiliation":944,"properties":18},"db2dc50b-5438-4412-970f-62c70799aefa",{"id":943,"createTime":18,"updateTime":18,"relativeEntities":945,"slug":18,"properties":946,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":949,"statistic":18},[],{"title":947},{"EN":948},"Department of Chemistry, Vivekanandha College of Engineering for Women, Tiruchengode, TN, India",[],{"title":951,"openalex":953},{"EN":952},"S. Mageswari",{"VOID":954},"A5080826822",{"id":956,"sortIndex":121,"researcher":18,"roles":957,"affiliations":958,"properties":967,"displayName":971,"givenName":18,"familyName":18},"a67c6310-6f1e-4639-90b3-2975d556ba71",[],[959],{"id":960,"sortIndex":19,"affiliation":961,"properties":18},"cf77768b-6d1f-497a-beaa-edd923c0b90c",{"id":960,"createTime":18,"updateTime":18,"relativeEntities":962,"slug":18,"properties":963,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":966,"statistic":18},[],{"title":964},{"EN":965},"Department of Chemistry, Hindustan College of Engineering, Coimbatore, TN, India",[],{"orcid":968,"title":970,"openalex":972},{"VOID":969},"https:\u002F\u002Forcid.org\u002F0000-0002-0792-2142",{"EN":971},"S. 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Syed Shabudeen",{"VOID":990},"A5065445965",{"id":992,"sortIndex":150,"researcher":18,"roles":993,"affiliations":994,"properties":1003,"displayName":1005,"givenName":18,"familyName":18},"b8a390d3-2576-44ba-994c-e243619ebc8b",[],[995],{"id":996,"sortIndex":19,"affiliation":997,"properties":18},"5f8264de-9d33-4b6e-b57a-7ea5e0336913",{"id":996,"createTime":18,"updateTime":18,"relativeEntities":998,"slug":18,"properties":999,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1002,"statistic":18},[],{"title":1000},{"EN":1001},"Department of Chemistry, Chikkanna Government Arts College, Tirupur, TN, India",[],{"title":1004,"openalex":1006},{"EN":1005},"N. Sivakumar",{"VOID":1007},"A5023521167",{"id":1009,"sortIndex":58,"researcher":18,"roles":1010,"affiliations":1011,"properties":1018,"displayName":1022,"givenName":18,"familyName":18},"1b7ebc8d-9c4d-4736-8c8a-b7b05df3cba2",[],[1012],{"id":996,"sortIndex":19,"affiliation":1013,"properties":18},{"id":996,"createTime":18,"updateTime":18,"relativeEntities":1014,"slug":18,"properties":1015,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1017,"statistic":18},[],{"title":1016},{"EN":1001},[],{"orcid":1019,"title":1021,"openalex":1023},{"VOID":1020},"https:\u002F\u002Forcid.org\u002F0000-0002-3422-8009",{"EN":1022},"Karthikeyan Sekar",{"VOID":1024},"A5030375562",{"url":18,"publisher":1026,"properties":1054},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":1027,"slug":10,"properties":1028,"entityType":16,"verifyStatus":17,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":19,"subjectFields":1031,"manageAffiliations":1035,"indexDatabases":1041,"url":18,"thumbnailPath":18,"statistic":1049,"gsStatistic":18,"type":18,"analyzePriority":18},[],{"title":1029,"eissn":1030},{"EN":13},{"VOID":15},[1032],{"id":22,"createTime":18,"updateTime":18,"relativeEntities":1033,"label":1034,"description":18,"parentId":18,"standard":18,"scholarHubFieldId":18},[],{"EN":25},[1036],{"id":28,"createTime":18,"updateTime":18,"relativeEntities":1037,"slug":18,"properties":1038,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1040,"statistic":18},[],{"title":1039},{"EN":32},[],[1042],{"id":36,"indexDatabase":1043,"url":49,"indexYears":18,"academicFieldIds":1048,"indexDatabaseRanking":18},{"id":38,"createTime":18,"updateTime":18,"relativeEntities":1044,"label":1045,"description":1046,"key":45,"publicationTags":1047,"standard":18},[],{"EN":41,"VI":41},{"EN":43,"VI":44},[47,48],[51],{"impactFactor":19,"impactFactorByYear":1050,"i10Index":58,"i10IndexLast5Year":19,"totalPublication":59,"totalPublicationByYear":1051,"totalCitation":65,"totalCitationByYear":1052,"totalCitationPerPublication":70,"totalCitationPerPublicationByYear":1053,"hindexLast5Year":75,"hindex":75},{"2015":54,"2016":55,"2017":56,"2018":57},{"2013":61,"2014":62,"2015":63,"2016":64},{"2014":67,"2015":68,"2016":69},{"2014":72,"2015":73,"2016":74},{"issue":1055,"pages":1056,"volume":1058},{"VOID":527},{"VOID":1057},"709-718",{"VOID":196},{"total":64,"publishYear":198,"statisticByYear":1060},{"2016":121,"2017":121,"2019":63,"2020":63,"2021":121,"2022":63,"2023":121},[47],[],{"id":1064,"createTime":1065,"updateTime":1066,"relativeEntities":1067,"slug":1068,"properties":1069,"entityType":97,"verifyStatus":98,"verifyTime":1083,"verifyNote":100,"languages":1084,"translateLanguages":1085,"viewCount":19,"primaryUrl":1086,"fullTextUrl":18,"authors":1087,"publicationType":162,"publisherRelationship":1141,"citationCount":69,"citationInfo":1176,"publishDate":1180,"publishYear":1177,"citationAnalyzeStatus":17,"lastCitationAnalyze":18,"indexDatabases":1181,"openAccess":18,"references":1182,"isForceReanalyzing":202},"9c91e472-f059-4cc7-82e9-8ef863ed000f","2024-09-03T19:40:36.055+00:00","2025-02-26T19:31:41.470+00:00",[],"Wrinkled-graphene-synthesis-and-characterization-of-few-layer-graphene-like-nanocarbons-from-kerosene",{"openalex":1070,"mag":1072,"abstract":1074,"title":1077,"keywords":1080,"doi":1081},{"VOID":1071},"W2423904575",{"VOID":1073},"2423904575",{"EN":1075,"VI":1076},"\u003Cjats:title>Abstract\u003C\u002Fjats:title>\u003Cjats:p>Wrinkled graphene, derived from a facile thermal decomposition and chemical method, was subjected to various analysis techniques and the results have been reported here. Raman studies revealed the presence of highly graphitized amorphous carbon, which was evident by the appearance of five peaks in the deconvoluted first order spectrum. This result was very well corroborated by the XRD analysis. XPS and FT-IR spectra confirmed the incorporation of oxygen functionalities into the carbon backbone. AFM and SEM images of the sample disclosed a cluster of few-layer wrinkled graphene fragments. TEM images displayed a chain of nearly spherical aggregates of graphene, resembling nanohorns. The resistivity and sheet resistance of the sample were found to be low, making the obtained material a promising candidate for various device applications. Hence, kerosene soot proved to be an efficient precursor for facile synthesis of few layer graphene-like nanocarbon.\u003C\u002Fjats:p>","\u003Cjats:title> Tóm tắt \u003C\u002Fjats:title>\u003Cjats:p>Graphene nhăn, được tạo ra từ phương pháp phân hủy nhiệt và hóa học đơn giản, đã được tiến hành phân tích bằng nhiều kỹ thuật khác nhau và kết quả được báo cáo tại đây. Nghiên cứu Raman đã tiết lộ sự xuất hiện của carbon vô định hình có độ graphit hóa cao, điều này được thể hiện qua sự xuất hiện của năm đỉnh trong phổ bậc một đã được giải quyết. Kết quả này đã được xác nhận tốt qua phân tích XRD. Quang phổ XPS và FT-IR cũng xác nhận sự kết hợp các chức năng oxy vào xương carbon. Hình ảnh AFM và SEM của mẫu cho thấy một cụm các mảnh graphene nhăn có vài lớp. Hình ảnh TEM hiển thị một chuỗi các tập hợp gần như hình cầu của graphene, giống như nanohorns. Độ dẫn điện và trở kháng của mẫu đã được phát hiện là thấp, khiến vật liệu thu được trở thành ứng cử viên triển vọng cho nhiều ứng dụng thiết bị khác nhau. Do đó, khói dầu hỏa đã chứng minh là một tiền chất hiệu quả cho tổng hợp graphene lớp mỏng giống nanocarbon một cách dễ dàng.\u003C\u002Fjats:p>",{"EN":1078,"VI":1079},"Wrinkled graphene: synthesis and characterization of few layer graphene-like nanocarbons from kerosene","Graphene nhăn: tổng hợp và đặc trưng các nanocarbon giống graphene lớp mỏng từ khói dầu hỏa",{"VI":221},{"VOID":1082},"10.1515\u002Fmsp-2016-0061","2024-09-03T19:40:36.054+00:00",[226],[228],"https:\u002F\u002Fwww.sciendo.com\u002Farticle\u002F10.1515\u002Fmsp-2016-0061",[1088,1107,1124],{"id":1089,"sortIndex":19,"researcher":18,"roles":1090,"affiliations":1091,"properties":1100,"displayName":1104,"givenName":18,"familyName":18},"92193c02-b463-4972-adc1-d12f9ff4f0d4",[],[1092],{"id":1093,"sortIndex":19,"affiliation":1094,"properties":18},"3d3f615b-2197-4f90-91fe-faec99d0593f",{"id":1093,"createTime":18,"updateTime":18,"relativeEntities":1095,"slug":18,"properties":1096,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1099,"statistic":18},[],{"title":1097},{"EN":1098},"Department of Physics, Christ University, Bengaluru-560 029, Karnataka, India",[],{"orcid":1101,"title":1103,"openalex":1105},{"VOID":1102},"https:\u002F\u002Forcid.org\u002F0000-0002-7970-622X",{"EN":1104},"A. V. Ramya",{"VOID":1106},"A5087987190",{"id":1108,"sortIndex":121,"researcher":18,"roles":1109,"affiliations":1110,"properties":1117,"displayName":1121,"givenName":18,"familyName":18},"f7b31147-efdf-493a-bd72-a34ec912fdb3",[],[1111],{"id":1093,"sortIndex":19,"affiliation":1112,"properties":18},{"id":1093,"createTime":18,"updateTime":18,"relativeEntities":1113,"slug":18,"properties":1114,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1116,"statistic":18},[],{"title":1115},{"EN":1098},[],{"orcid":1118,"title":1120,"openalex":1122},{"VOID":1119},"https:\u002F\u002Forcid.org\u002F0000-0001-9293-8677",{"EN":1121},"Anu N. 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Mater. Chem., 18 (2008), 1517.",{"doi":1186},"10.1039\u002Fb716536f",{"id":18,"text":1188,"url":18,"identifiers":1189},"Manoj B., Kunjomana A.G., Russ. J. Appl. Chem, 87 (2014), 1726.",{"doi":1190},"10.1134\u002FS1070427214110251",{"id":18,"text":1192,"url":18,"identifiers":1193},"Coville N.J., Mhlanga S.D., Nxumalo E.N., Shaikjee A., S. Afr. J. Sci., 107 (2011), 418.",{"doi":1194},"10.4102\u002Fsajs.v107i3\u002F4.418",{"id":18,"text":1196,"url":18,"identifiers":1197},"Sadezky A., Muckenhuber H., Grothe H., Niessner R., Pöschl U., Carbon, 43 (2005), 173.",{"doi":1198},"10.1016\u002Fj.carbon.2005.02.018",{"id":18,"text":1200,"url":18,"identifiers":1201},"Masako Y., Iijima S., Vincent H.C., Single-Wall Carbon Nanohorns and Nanocones, in: Jorio A., Dresselhaus G., Dresselhaus M.S. (Eds.), Carbon Nanotubes, Springer, Heidelberg, 2008, p. 605.",{"doi":1202},"10.1007\u002F978-3-540-72865-8_19",{"id":18,"text":1204,"url":18,"identifiers":1205},"Mohan A.N., Manoj B., Int. J. Electrochem. Sc., 7 (2012), 9537.",{"doi":1206},"10.1016\u002FS1452-3981(23)16217-1",{"id":18,"text":1208,"url":18,"identifiers":1209},"Villegas J.P., Valle J.F.P., Rodriguez J.M.M., Garcia M.G., J. Anal. Appl. Pyrol., 76 (2006), 103.",{"doi":1210},"10.1016\u002Fj.jaap.2005.08.002",{"id":18,"text":1212,"url":18,"identifiers":1213},"Mohan A.N., Manoj B., John J., Ramya A.V., Asian J. Chem., 25 (2013), S76.",{},{"id":18,"text":1215,"url":18,"identifiers":1216},"Kaniyoor A., Ramaprabhu S., AIP Adv., 2 (2012), 0321831.",{"doi":1217},"10.1063\u002F1.4756995",{"id":18,"text":1219,"url":18,"identifiers":1220},"Manoj B., Asian J. Chem., 26 (2014), 4553.",{"doi":1221},"10.14233\u002Fajchem.2014.15150",{"id":18,"text":1223,"url":18,"identifiers":1224},"Pimenta M.A., Dresselhaus G., Dresselhaus M.S., Cancado L.G., Jorio, Saito R., Phys. Chem. Chem. Phys., 9 (2007), 1276.",{"doi":1225},"10.1039\u002FB613962K",{"id":18,"text":1227,"url":18,"identifiers":1228},"Chen W., YAN L., Nanoscale, 2 (2010), 559.",{"doi":1229},"10.1039\u002Fb9nr00191c",{"id":18,"text":1231,"url":18,"identifiers":1232},"Paredes J.I., Villar R.S., Alonso A.M., Tascon J.M.D., Langmuir, 24 (2008), 10560.",{"doi":1233},"10.1021\u002Fla801744a",{"id":18,"text":1235,"url":18,"identifiers":1236},"Manoj B., Russ. J. Phys. Chem. A, 89 (2015), 167.",{"doi":1237},"10.1134\u002FS0036024415130257",{"id":18,"text":1239,"url":18,"identifiers":1240},"Baro M., Vijayan C., Ramaprabhu S., J. Nanopart. Res., 16 (2014) 7.",{"doi":1241},"10.1007\u002Fs11051-014-2711-9",{"id":18,"text":1243,"url":18,"identifiers":1244},"Manoj B., Sreelaksmi S., Mohan A.N., Kunjo-Mana A.G., Int. J. Electrochem. Sci., 7 (2012), 3215.",{"doi":1245},"10.1016\u002FS1452-3981(23)13948-4",{"id":18,"text":1247,"url":18,"identifiers":1248},"MANOJ B., RAMYA K., JOHN J., Int. J. Electrochem. Sci., 8 (2013), 9421.",{"doi":1249},"10.1016\u002FS1452-3981(23)12981-6",{"id":18,"text":1251,"url":18,"identifiers":1252},"Iijima S., Yudasaka M., Yamada R., Bandow S., Suenaga K., Kokai F., Takahashi K., Chem. Phys. Lett. 309 (1999), 165.",{"doi":1253},"10.1016\u002FS0009-2614(99)00642-9",{"id":1255,"createTime":1256,"updateTime":1257,"relativeEntities":1258,"slug":1259,"properties":1260,"entityType":97,"verifyStatus":98,"verifyTime":1256,"verifyNote":100,"languages":1275,"translateLanguages":1276,"viewCount":19,"primaryUrl":1277,"fullTextUrl":18,"authors":1278,"publicationType":162,"publisherRelationship":1381,"citationCount":1416,"citationInfo":1417,"publishDate":1419,"publishYear":534,"citationAnalyzeStatus":17,"lastCitationAnalyze":18,"indexDatabases":1420,"openAccess":18,"references":1421,"isForceReanalyzing":202},"4487e23c-a532-45e4-ab7a-73f3c4958097","2024-09-02T14:09:43.184+00:00","2025-02-26T19:30:43.383+00:00",[],"Poly-N-isopropylacrylamide-co-methacrylic-acid-microgel-stabilized-copper-nanoparticles-for-catalytic-reduction-of-nitrobenzene",{"openalex":1261,"mag":1263,"abstract":1265,"title":1268,"keywords":1271,"doi":1273},{"VOID":1262},"W2344128956",{"VOID":1264},"2344128956",{"EN":1266,"VI":1267},"\u003Cjats:title>Abstract\u003C\u002Fjats:title>\n               \u003Cjats:p> Poly(N-isopropylacrylamide-co-methacrylic acid) microgels [p(NIPAM-co-MAAc)] were synthesized by precipitation polymerization of N-isopropylacrylamide and methacrylic acid in aqueous medium. These microgels were characterized by dynamic light scattering and Fourier transform infrared spectroscopy. These microgels were used as micro-reactors for in situ synthesis of copper nanoparticles using sodium borohydride (NaBH\u003Cjats:sub>4\u003C\u002Fjats:sub>) as reducing agent. The hybrid microgels were used as catalysts for the reduction of nitrobenzene in aqueous media. The reaction was performed with different concentrations of cat­alyst and reducing agent. A linear relationship was found between apparent rate constant (k\u003Cjats:sub>a\u003C\u002Fjats:sub>pp) and amount of catalyst. When the amount of catalyst was increased from 0.13 to 0.76 mg\u002FmL then k\u003Cjats:sub>app\u003C\u002Fjats:sub> was increased from 0.03 to 0.14 min\u003Cjats:sup>-1\u003C\u002Fjats:sup>. Activation parameters were also determined by performing reaction at two different temperatures. The catalytic process has been discussed in terms of energy of activation, enthalpy of activation and entropy of activation. The synthesized particles were found to be stable even after 14 weeks and showed catalytic activity for the reduction of nitrobenzene. \u003C\u002Fjats:p>","\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\n               \u003Cjats:p> Microgel Poly(N-isopropylacrylamide-co-methacrylic acid) [p(NIPAM-co-MAAc)] đã được tổng hợp bằng phương pháp polymer hóa kết tủa N-isopropylacrylamide và acid methacrylic trong môi trường nước. Các microgel này đã được đặc trưng bởi sự tán xạ ánh sáng động và quang phổ hồng ngoại biến đổi Fourier. Các microgel này đã được sử dụng làm vi phản ứng để tổng hợp nanoparticle đồng tại chỗ bằng cách sử dụng natri borohydride (NaBH\u003Cjats:sub>4\u003C\u002Fjats:sub>) làm tác nhân khử. Các microgel hỗn hợp đã được sử dụng làm xúc tác cho phản ứng khử nitrobenzene trong môi trường nước. Phản ứng được thực hiện với các nồng độ khác nhau của xúc tác và tác nhân khử. Một mối quan hệ tuyến tính đã được tìm thấy giữa hằng số tỷ lệ biểu kiến (k\u003Cjats:sub>app\u003C\u002Fjats:sub>) và lượng xúc tác. Khi lượng xúc tác tăng từ 0.13 đến 0.76 mg\u002FmL thì k\u003Cjats:sub>app\u003C\u002Fjats:sub> đã tăng từ 0.03 đến 0.14 phút\u003Cjats:sup>-1\u003C\u002Fjats:sup>. Các tham số kích hoạt cũng đã được xác định bằng cách thực hiện phản ứng ở hai nhiệt độ khác nhau. Quá trình xúc tác đã được thảo luận theo khía cạnh năng lượng kích hoạt, enthalpy kích hoạt và entropy kích hoạt. Các hạt tổng hợp được phát hiện là ổn định ngay cả sau 14 tuần và cho thấy hoạt tính xúc tác cho việc khử nitrobenzene. \u003C\u002Fjats:p>",{"EN":1269,"VI":1270},"Poly(N-isopropylacrylamide-co-methacrylic acid) microgel stabilized copper nanoparticles for catalytic reduction of nitrobenzene","Microgel Poly(N-isopropylacrylamide-co-methacrylic acid) ổn định nanoparticle đồng để giảm nitrobenzene",{"VI":1272},"microgel, nanoparticle đồng, xúc tác, khử nitrobenzene, polymer hóa kết tủa",{"VOID":1274},"10.1515\u002Fmsp-2015-0074",[226],[228],"https:\u002F\u002Fwww.sciendo.com\u002Farticle\u002F10.1515\u002Fmsp-2015-0074",[1279,1298,1315,1334,1349,1364],{"id":1280,"sortIndex":19,"researcher":18,"roles":1281,"affiliations":1282,"properties":1291,"displayName":1295,"givenName":18,"familyName":18},"9f6c9a8e-71fa-4a7e-ad6e-51c320274e32",[],[1283],{"id":1284,"sortIndex":19,"affiliation":1285,"properties":18},"56d7ae39-6f4e-4e0e-a3a3-bb638dba6596",{"id":1284,"createTime":18,"updateTime":18,"relativeEntities":1286,"slug":18,"properties":1287,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1290,"statistic":18},[],{"title":1288},{"VI":1289},"Institute of Chemistry, University of the Punjab, New Campus, Lahore 54590, Pakistan",[],{"orcid":1292,"title":1294,"openalex":1296},{"VOID":1293},"https:\u002F\u002Forcid.org\u002F0000-0003-3200-2935",{"EN":1295},"Zahoor H. Farooqi",{"VOID":1297},"A5072833150",{"id":1299,"sortIndex":121,"researcher":18,"roles":1300,"affiliations":1301,"properties":1308,"displayName":1312,"givenName":18,"familyName":18},"c0dc082d-fa20-42c9-a148-035559fe127c",[],[1302],{"id":1284,"sortIndex":19,"affiliation":1303,"properties":18},{"id":1284,"createTime":18,"updateTime":18,"relativeEntities":1304,"slug":18,"properties":1305,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1307,"statistic":18},[],{"title":1306},{"VI":1289},[],{"orcid":1309,"title":1311,"openalex":1313},{"VOID":1310},"https:\u002F\u002Forcid.org\u002F0000-0001-7435-5021",{"EN":1312},"Zonarah 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              \u003Cjats:p>Thin films of lead oxide were synthesized by cost effective spray pyrolysis technique at different substrate temperatures on glass substrates. Effect of substrate temperature on the growth mechanism and physical properties of the films was investigated. All the films were polycrystalline in nature with tetragonal structure corresponding to α-PbO. The films coated at 225 °C and 275 °C were (1 0 1) oriented, while the films deposited at 325 °C and 375 °C were (0 0 2) oriented. Above 375 °C, the pure tetragonal nature deteriorated and the peaks corresponding to orthorhombic phase were observed. The band gap value was found to be in the range of 2.3 to 2.62 eV. All the films had a resistivity of the order of 103 ohm-cm. A minimum resistivity of 0.0191 × 103 ohm-cm was obtained for the film coated at 325 °C. The activation energy increased with increase in substrate temperature.\u003C\u002Fjats:p>","\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\n               \u003Cjats:p>Màng mỏng oxit chì được tổng hợp bằng kỹ thuật phun nhiệt giá rẻ ở các nhiệt độ nền khác nhau trên nền kính. Ảnh hưởng của nhiệt độ nền đến cơ chế phát triển và các tính chất vật lý của các màng mỏng đã được nghiên cứu. Tất cả các màng mỏng đều có tính chất đa tinh thể với cấu trúc tứ diện tương ứng với α-PbO. Các màng mỏng phủ ở 225 °C và 275 °C có định hướng (1 0 1), trong khi các màng được lắng đọng ở 325 °C và 375 °C có định hướng (0 0 2). Trên 375 °C, tính chất tứ diện nguyên chất suy giảm và các đỉnh tương ứng với pha orthorhombic được quan sát thấy. Giá trị khoảng cách băng được tìm thấy trong khoảng từ 2.3 đến 2.62 eV. Tất cả các màng có điện trở suất vào khoảng 10^3 ohm-cm. Một điện trở suất tối thiểu là 0.0191 × 10^3 ohm-cm được thu được cho màng phủ ở 325 °C. Năng lượng kích hoạt tăng lên khi nhiệt độ nền tăng.",{"EN":1437,"VI":1438},"Role of substrate temperature on the growth mechanism and physical properties of spray deposited lead oxide thin films","Vai trò của nhiệt độ nền đối với cơ chế phát triển và tính chất vật lý của màng mỏng oxit chì được phun phủ",{"VI":1440},"màng mỏng, oxit chì, kỹ thuật phun nhiệt, nhiệt độ nền, tính chất vật lý",{"VOID":1442},"10.2478\u002Fs13536-014-0208-y","2025-01-19T03:27:13.478+00:00",[226],[228],"https:\u002F\u002Fwww.sciendo.com\u002Farticle\u002F10.2478\u002Fs13536-014-0208-y",[1448,1467,1484],{"id":1449,"sortIndex":19,"researcher":18,"roles":1450,"affiliations":1451,"properties":1460,"displayName":1464,"givenName":18,"familyName":18},"37f61156-7161-4647-8b35-211f863f9e38",[],[1452],{"id":1453,"sortIndex":19,"affiliation":1454,"properties":18},"646ccff3-0c0c-4013-abd8-aa5c44e8aa94",{"id":1453,"createTime":18,"updateTime":18,"relativeEntities":1455,"slug":18,"properties":1456,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1459,"statistic":18},[],{"title":1457},{"EN":1458},"PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi -613 503, Thanjavur District, Tamilnadu, India",[],{"orcid":1461,"title":1463,"openalex":1465},{"VOID":1462},"https:\u002F\u002Forcid.org\u002F0000-0002-0686-5959",{"EN":1464},"M. 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