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While single layer high-k dielectric MIM capacitors fail to provide low VCC (\n                  \n                    \n                  \n                  $$\u003C100$$\n                  \n                    \n                  \n                 ppm\u002FV\n                  \n                    \n                  \n                  $$^{2}$$\n                  \n                    \n                  \n                ), stacked high-k\u002F\n                  \n                    \n                  \n                  $$\\hbox {SiO}_{2}$$\n                  \n                    \n                  \n                 dielectrics show a promising solution as the negative VCC of \n                  \n                    \n                  \n                  $$\\hbox {SiO}_{2}$$\n                  \n                    \n                  \n                 cancels the positive VCC of high-k materials. To understand the mechanism and origin of negative VCC, a unified analytical model of negative VCC with experimental validation is presented in this paper. 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Science 291, 630–633 (2001)\nLaw, M., Sirbuly, D.J., Johnson, J.C., Goldberger, J., Saykally, R.J., Yang, P.: Nanoribbon waveguides for subwavelength photonics integration. Science 305, 1269–1273 (2004)\nKatz, E., Willner, I.: Integrated nanoparticle-biomolecule hybrid systems: synthesis, properties, and applications. Angew. Chem. 43(45), 6042–6108 (2004)\nKneipp, K., Wang, Y., Kneipp, H., Perelman, L.T., Itzkan, I., Dasari, R.R., Feld, M.S.: Single molecule detection using surface-enhanced Raman scattering (SERS). Phys. Rev. Lett. 78, 1667–1670 (1997)\nBiteen, J.S., Pacifici, D., Lewis, N.S., Atwater, H.A.: Enhanced radiative emission rate and quantum efficiency in coupled silicon nanocrystal-nanostructured gold emitters. Nano Lett. 9, 1768–1773 (2005)\nCatchpole, K.R., Polman, A.: Plasmonic solar cell. Opt. Express 16(26), 21793–21800 (2008)\nBoriskina, S.V., Gopinath, A., Negro, L.D.: Optical gap formation and localization properties of optical modes in deterministic aperiodic photonic structures. Opt. Express 16(23), 18813–18826 (2008)\nHormozi-Nezhad, M.R., Karami, P., Robatjazi, H.: A simple shape-controlled synthesis of gold nanoparticles using nonionic surfactants. Int. J. Furt. Chem. Sci. 3, 7726–7732 (2013)\nKawamura, G.O., Nogami, M., Matsuda, A.: Shape-controlled metal nanoparticles and their assemblies with optical functionalities. J. Nanomater. 2013, 2 (2013)\nLe Ru, E.C., Pablo, G.: Etchegoin Principles of Surface Enhanced Raman Spectroscopy and Related Plasmonic Effects, 1st edn. Elsevier, Amsterdam (2008)\nChoi, C.J., Wu, H.Y., George, S., Weyhenmeyer, J., Cunningham, B.T.: Biochemical sensortubing for point-of-care monitoring of intravenous drugs and metabolites. Lab Chip 12(3), 574–581 (2012)\nChoi, C.J., Xu, Z.D., Wu, H.Y., Liu, G.L., Cunningham, B.T.: Surface-enhanced Raman nanodomes. Nanotechnology 21(41), 415301 (2010)\nWu, H.Y., Choi, C.J., Cunningham, B.T.: Plasmonic nanogap-enhanced Raman scattering using a resonant nanodome array. Small 8(18), 2878–2885 (2012)\nBlock, I.D., Mathias, P.C., Ganesh, N., Jones, S.I., Dorvel, B.R., Chaudhery, V., Vodkin, L.O., Bashir, R., Cunningham, B.T.: A detection instrument for enhanced-fluorescence and label-free imaging on photonic crystal surfaces. Opt. Express 17(15), 13222–13235 (2009)\nNegro, D.L., Feng, N.: Spectral gaps and mode localization in Fibonacci chains of metal nanoparticles. Opt. Express 22, 14396–14403 (2007)\nKalousek, R., Dub, P., Břínek, L., ŠikolaD, T.: Response of plasmonic resonant nanorods: an analytical approach to optical antennas. Opt. Express 20(16), 17916–17927 (2012)\nBruck, R., Muskens, O.L.: Plasmonic nanoantennas as integrated coherent perfect absorbers on SOI waveguides for modulators and all-optical switches. Opt. Express 21(23), 27652–27661 (2013)\nKrasavin, V.A., Zayats, A.V.: Guiding light at the nanoscale: numerical optimization of ultrasubwavelength metallic wire plasmonic waveguides. Opt. Lett. 36, 3127–3129 (2011)\nDühring, B.M., Sigmund, O.: Optimization of extraordinary optical absorption in plasmonic and dielectric structures. J. Opt. Soc. Am. B 30, 1154–1160 (2013)\nLoke, L.Y., Mengüç, M.P., Nieminen, T.A.: Discrete-dipole approximation with surface interaction: computational toolbox for MATLAB. J. Quant. Spectrosc. Radiat. Transf. 112(11), 1711–1725 (2011)\nBecker, J., Trügler, A., Jakab, A.: The optimal aspect ratio of gold nanorods for plasmonic bio-sensing. Plasmon. J. 5(2), 161–167 (2010)\nBohren, C.F., Huffman, D.R.: Absorption and Scattering of Light by Small Particles. Wiley, New York (1998)\nRoa, R.V., Savsani, V.J., Vakharia, D.P.: Teacher-learning-based optimization: a novel method for constrained mechanical design optimization problems. Comput. Aided Des. 43(3), 303–315 (2011)\nAkhlaghi, M., Emami, F., Nozhat, N.: Binary TLBO algorithm assisted for designing plasmonic nano bi-pyramids-based absorption coefficient. Mod. Opt. 61(13), 1092–1096 (2014)\nCatchpole, K.R., Polman, A.: Plasmonic solar cell. Opt. Express 16, 21793–21800 (2008)\nZhang, J.Z.: Biomedical applications of shape-controlled plasmonic nanostructures: a case study of hollow gold nanospheres for photothermal ablation therapy of cancer. J. Phys. Chem. Lett. 1.4, 686–695 (2010)",{"EN":423},"A new efficient binary optimization method being established on teaching-learning-based optimization (TLBO) algorithm was used to design an array of plasmonic nano-tubes to increase maximum absorption coefficient spectrum. Binary TLBO (BTLBO), a bunch of learners including a matrix with binary entries responsible for controlling nano-tubes in the array, shows the presence with symbol of (‘1’) and the absence with (‘0’). Simulation results indicate that non-periodic structure having more appropriate response in terms of the absorption coefficient strongly depends on the position of plasmonic nano-particles and non-periodic structures. This efficient approach is used in optical applications such as solar cell and plasmonic nano-antenna.",{"EN":425},"Binary optimization of metallic nano-tube-based absorption coefficient",{"VOID":427},"10.1007\u002Fs10825-015-0676-2","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs10825-015-0676-2",[430,445,462],{"id":431,"sortIndex":21,"researcher":20,"roles":432,"affiliations":433,"properties":442},"a09c24fc-ac94-41aa-8c7d-7feda0707700",[219],[434],{"id":20,"sortIndex":21,"affiliation":435,"properties":20},{"id":436,"createTime":437,"updateTime":437,"relativeEntities":438,"slug":20,"properties":439,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"ef8a398a-010a-4bc9-abea-21ade3b1bcd1","2024-01-20T05:34:00.964+00:00",[],{"title":440},{"VI":441},"Young Researchers and Elite Club, Omidieh Branch, Islamic Azad University, Omidieh, Iran",{"title":443},{"VI":444},"Majid 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A.K., Novoselov, K.S.: In Nanoscience and technology: a collection of reviews from nature journals, pp. 11–19. 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Lett. 98(22), 223107 (2011)\nVogt, P., De Padova, P., Quaresima, C., Avila, J., Frantzeskakis, E., Asensio, M.C., Resta, A., Ealet, B., Le Lay, G.: Silicene: compelling experimental evidence for graphenelike two-dimensional silicon. Phys. Rev. Lett. 108(15), 155501 (2012)\nRoome, N.J., Carey, J.D.: Beyond graphene: Stable elemental monolayers of silicene and germanene. ACS Applied Materials & Interfaces 6(10), 7743–7750 (2014)\nTao, L., Cinquanta, E., Chiappe, D., Grazianetti, C., Fanciulli, M., Dubey, M., Molle, A., Akinwande, D.: Silicene field-effect transistors operating at room temperature. Nat. Nanotechnol. 10(3), 227–231 (2015)\nLi, X., Mullen, J.T., Jin, Z., Borysenko, K.M., Nardelli, M.B., Kim, K.W.: Intrinsic electrical transport properties of monolayer silicene and MoS\\(_2\\) from first principles. Phys. Rev. B 87(11), 115418 (2013)\nGaddemane, G., Vandenberghe, W.G., Van de Put, M.L., Chen, E., Fischetti, M.V.: Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: silicene and germanene. J. Appl. Phys. 124(4), 044306 (2018)\nDávila, M.E., Xian, L., Cahangirov, S., Rubio, A., Le Lay, G.: Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene. New J. Phys. 16(9), 095002 (2014)\nCastellanos-Gomez, A., Vicarelli, L., Prada, E., Island, J.O., Narasimha-Acharya, K.L., Blanter, S.I., Groenendijk, D.J., Buscema, M., Steele, G.A., Alvarez, J.V., et al.: Isolation and characterization of few-layer black phosphorus. 2D Materials 1(2), 025001 (2014)\nXia, F., Wang, H., Jia, Y.: Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5(1), 1–6 (2014)\nLi, L., Yu, Y., Ye, G.J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X.H., Zhang, Y.: Black phosphorus field-effect transistors. Nat. Nanotechnol. 9(5), 372 (2014)\nLiu, H., Neal, A.T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., Ye, P.D.: Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano. 8(4), 4033–4041 (2014)\nCao, Y., Mishchenko, A., Yu, G., Khestanova, E., Rooney, A.P., Prestat, E., Kretinin, A.V., Blake, P., Shalom, M.B., Woods, C., et al.: Quality heterostructures from two-dimensional crystals unstable in air by their assembly in inert atmosphere. Nano Lett. 15(8), 4914–4921 (2015)\nDoganov, R.A., Koenig, S.P., Yeo, Y., Watanabe, K., Taniguchi, T., Özyilmaz, B.: Transport properties of ultrathin black phosphorus on hexagonal boron nitride. Appl. Phys. Lett. 106(8), 083505 (2015)\nXiang, D., Han, C., Wu, J., Zhong, S., Liu, Y., Lin, J., Zhang, X.-A., Hu, W.P., Özyilmaz, B., Neto, A.C., et al.: Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus. Nat. Commun. 6(1), 1–8 (2015)\nGillgren, N., Wickramaratne, D., Shi, Y., Espiritu, T., Yang, J., Hu, J., Wei, J., Liu, X., Mao, Z., Watanabe, K., et al.: Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures. 2D Materials 2(1), 011001 (2014)\nTayari, V., Hemsworth, N., Fakih, I., Favron, A., Gaufrès, E., Gervais, G., Martel, R., Szkopek, T.: Two-dimensional magnetotransport in a black phosphorus naked quantum well. Nat. Commun. 6(1), 1–7 (2015)\nGaddemane, G., Vandenberghe, W.G., Van de Put, M.L., Chen, S., Tiwari, S., Chen, E., Fischetti, M.V.: Theoretical studies of electronic transport in monolayer and bilayer phosphorene: a critical overview. Phys. Rev. B 98(11), 115416 (2018)\nMak, K.F., Lee, C., Hone, J., Shan, J., Heinz, T.F.: Atomically thin MoS\\(_2\\): a new direct-gap semiconductor. Phys. Rev. Lett. 105(13), 136805 (2010)\nRadisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A.: Single-layer MoS\\(_2\\) transistors. Nat. Nanotechnol. 6(3), 147–150 (2011)\nLarentis, S., Fallahazad, B., Tutuc, E.: Field-effect transistors and intrinsic mobility in ultra-thin MoSe\\(_2\\) layersb. Appl. Phys. Lett. 101(22), 223104 (2012)\nGaddemane, G., Gopalan, S., Van de Put, M.L., Fischetti, M.V.: Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenides. J. Comput. Electron. (2020). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs10825-020-01526-1\nSplendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., Wang, F.: Emerging photoluminescence in monolayer MoS\\(_2\\). Nano Lett. 10(4), 1271–1275 (2010)\nEllis, J.K., Lucero, M.J., Scuseria, G.E.: The indirect to direct band gap transition in multilayered MoS\\(_2\\) as predicted by screened hybrid density functional theory. Appl. Phys. Lett. 99(26), 261908 (2011)\nZhang, F., Appenzeller, J.: Tunability of short-channel effects in MoS\\(_2\\) field-effect devices. Nano Lett. 15(1), 301–306 (2015)\nChuang, H.-J., Tan, X., Ghimire, N.J., Perera, M.M., Chamlagain, B., Cheng, M.M.-C., Yan, J., Mandrus, D., Tomanek, D., Zhou, Z.: High mobility WSe\\(_2\\) p-and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts. Nano Lett. 14(6), 3594–3601 (2014)\nLiu, W., Kang, J., Sarkar, D., Khatami, Y., Jena, D., Banerjee, K.: Role of metal contacts in designing high-performance monolayer n-type WSe\\(_2\\) field effect transistors. Nano Lett. 13(5), 1983–1990 (2013)\nMovva, H.C.P., Rai, A., Kang, S., Kim, K., Fallahazad, B., Taniguchi, T., Watanabe, K., Tutuc, E., Banerjee, S.K.: High-Mobility Holes in Dual-Gated WSe\\(_2\\) Field-Effect Transistors. ACS Nano 10(9), 10402–10410 (2015). https:\u002F\u002Fdoi.org\u002F10.1021\u002Facsnano.5b04611\nKang, J., Liu, W., Sarkar, D., Jena, D., Banerjee, K.: Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors. Phys. Rev. X 4(3), 031005 (2014)\nPilotto, A., Khakbaz, P., Palestri, P., Esseni, D.: Semi-classical transport in MoS\\(_2\\) and MoS\\(_2\\) transistors by a Monte Carlo approach. Solid-State Electron. 192, 108295 (2022)\nGopalan, S., Van de Put, M.L., Gaddemane, G., Fischetti, M.V.: Theoretical study of electronic transport in two-dimensional transition metal dichalcogenides: effects of the dielectric environment. Phys. Rev. Appl. 18(5), 054062 (2022)\nGaddemane, G., Van de Put, M.L., Vandenberghe, W.G., Chen, E., Fischetti, M.V.: Monte Carlo analysis of Phosphorene nanotransistors. J. Comput. Electron. 20(1), 60–69 (2021)\n...Giannozzi, P., Baroni, S., Bonini, N., Calandra, M., Car, R., Cavazzoni, C., Ceresoli, D., Chiarotti, G.L., Cococcioni, M., Dabo, I., Dal Corso, A., de Gironcoli, S., Fabris, S., Fratesi, G., Gebauer, R., Gerstmann, U., Gougoussis, C., Kokalj, A., Lazzeri, M., Martin-Samos, L., Marzari, N., Mauri, F., Mazzarello, R., Paolini, S., Pasquarello, A., Paulatto, L., Sbraccia, C., Scandolo, S., Sclauzero, G., Seitsonen, A.P., Smogunov, A., Umari, P., Wentzcovitch, R.M.: QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. J. Phys. Cond. Matt. 21(39), 395502 (2009). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0953-8984\u002F21\u002F39\u002F395502\nPerdew, J.P., Burke, K., Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77(18), 3865 (1996). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.77.3865\nHamann, D.: Optimized norm-conserving Vanderbilt pseudopotentials. Phys. Rev. B 88(8), 085117 (2013). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.88.085117\nThis is due to issues encountered during the calculation of the electron-phonon matrix elements when accounting for spin-orbit interaction using Quantum ESPRESSO and EPW\nPoncé, S., Margine, E.R., Giustino, F.: Towards predictive many-body calculations of phonon-limited carrier mobilities in semiconductors. Phys. Rev. B 10(97), 121201(R) (2018). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.97.121201\nGiustino, F., Cohen, M.L., Louie, S.G.: Electron-phonon interaction using Wannier functions. Phys. Rev. B 76(16), 165,108 (2007). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.76.165108\nBaroni, S., De Gironcoli, S., Dal Corso, A., Giannozzi, P.: Phonons and related crystal properties from density-functional perturbation theory. Rev. Mod. Phys. 73(2), 515 (2001). https:\u002F\u002Fdoi.org\u002F10.1103\u002FRevModPhys.73.515\nGiustino, F.: Electron-phonon interactions from first principles. Rev. Mod. Phys. 89, 015003 (2019). https:\u002F\u002Fdoi.org\u002F10.1103\u002FRevModPhys.89.015003\nGiustino, F.: Erratum: electron-phonon interactions from first principles. [Rev. Mod. Phys. 89, 15003 (2017)]. Rev. Mod. Phys. 91(1), 019901 (2019). https:\u002F\u002Fdoi.org\u002F10.1103\u002FRevModPhys.91.019901\nVan de Put, M. L., Gaddemane, G., Gopalan, S., Fischetti, M. V.: In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (IEEE, 2020), pp. 281–284\nJacoboni, C., Reggiani, L.: The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Mod. Phys. 55(3), 645 (1983)\nFischetti, M.V., Laux, S.E.: Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. Phys. Rev. B 38(14), 9721 (1988)\nHockney, R.W., Eastwood, J.W.: Computer Simulation Using Particles. CRC Press, Boca Raton (1988). https:\u002F\u002Fdoi.org\u002F10.1201\u002F9780367806934\nBritnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Schedin, F., Katsnelson, M.I., Eaves, L., Morozov, S.V., Mayorov, A.S., Peres, N.M., et al.: Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Lett. 12(3), 1707–1710 (2012). https:\u002F\u002Fdoi.org\u002F10.1021\u002Fnl3002205\nLee, G.-H., Yu, Y.-J., Lee, C., Dean, C., Shepard, K.L., Kim, P., Hone, J.: Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. Appl. Phys. Lett. 99(24), 243,114 (2011). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3662043\nNagy, D., Indalecio, G., Garcia-Loureiro, A.J., Elmessary, M.A., Kalna, K., Seoane, N.: FinFET versus gate-all-around nanowire FET: performance, scaling, and variability. IEEE J. Electron Devices Soc. 6, 332–340 (2018)",{"EN":523},"Field-effect transistors (FETs) having two-dimensional (2D) materials as the channel offer superior gate control and decreased short-channel effects when compared to bulk-semiconductor channels. Here, employing ab initio band structure and scattering rates as input to Monte Carlo simulations, we investigate the electron-transport characteristics in monolayer MoS2 and WSe2 at high fields and simulate double-gate MOSFETs based on these TMD materials. Considering different gate insulators and TMD channels, we also account for the effects caused by the dielectric environment (substrate and gate insulators, and metal–gate contact) on the transport properties of the 2D channel and on the transfer characteristics of the devices. In all cases, the saturation velocity at high fields and the on-current and transconductance of the devices are significantly depressed by these ’dielectric environment’ effects. In particular, accounting fully for the presence of the dielectrics, in the double-gate nMOS device with MoS2 as the channel, the Ion calculated is \n                \n                  \n                \n                $$\\approx$$\n                \n               380 \n                \n                  \n                \n                $$\\upmu$$\n                \n              A\u002F\n                \n                  \n                \n                $$\\upmu$$\n                \n              m for the more realistic gate stack of HfO2\u002FMoS2\u002FSiO2, which is in the borderline of fulfilling the demands of the International Technology Roadmap for Semiconductors (ITRS) and the International Roadmap for Devices and Systems (IRDS) for low power applications. However, in the double-gate pMOS device with WSe2 as the channel, the on-current calculated is \n                \n                  \n                \n                $$\\mathrm{\\approx }$$\n                \n               800 \n                \n                  \n                \n                $$\\upmu$$\n                \n              A\u002F\n                \n                  \n                \n                $$\\upmu$$\n                \n              m for the HfO2\u002FWSe2\u002FSiO2 system, which satisfies the ITRS requirements.",{"EN":525},"Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation",{"VOID":527},"10.1007\u002Fs10825-023-02071-3","https:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-023-02071-3",[530,545,562,574,586],{"id":531,"sortIndex":145,"researcher":20,"roles":532,"affiliations":533,"properties":542},"33e068c6-161c-4e45-bf0f-d9d4378efded",[219],[534],{"id":20,"sortIndex":21,"affiliation":535,"properties":20},{"id":536,"createTime":537,"updateTime":537,"relativeEntities":538,"slug":20,"properties":539,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"3a1e2fdf-398e-42cc-ab33-2ca7460e4339","2024-01-28T11:20:19.913+00:00",[],{"title":540},{"VI":541},"Department of Material Science and Engineering, The University of Texas at Dallas, Richardson, USA",{"title":543},{"VI":544},"Massimo Fischetti",{"id":546,"sortIndex":236,"researcher":20,"roles":547,"affiliations":548,"properties":559},"9c6ee5b1-94cd-4757-ae36-a77d967c119b",[219],[549],{"id":20,"sortIndex":21,"affiliation":550,"properties":20},{"id":551,"createTime":552,"updateTime":553,"relativeEntities":554,"slug":555,"properties":556,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"94cf9c03-8bd4-4797-82ba-7cec3b40e486","2024-01-29T03:43:20.572+00:00","2024-12-26T02:22:20.547+00:00",[],"IMEC-Leuven-Belgium",{"title":557},{"VI":558},"IMEC, Leuven, Belgium",{"title":560},{"VI":561},"Gautam Gaddemane",{"id":563,"sortIndex":21,"researcher":20,"roles":564,"affiliations":565,"properties":571},"d6c9bcf1-5b1f-40ca-95b4-1e2dbee93f61",[219],[566],{"id":20,"sortIndex":21,"affiliation":567,"properties":20},{"id":536,"createTime":537,"updateTime":537,"relativeEntities":568,"slug":20,"properties":569,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":570},{"VI":541},{"title":572},{"VI":573},"Sanjay Gopalan",{"id":575,"sortIndex":153,"researcher":20,"roles":576,"affiliations":577,"properties":583},"1d579377-7883-46f7-9c06-17f539a99013",[219],[578],{"id":20,"sortIndex":21,"affiliation":579,"properties":20},{"id":536,"createTime":537,"updateTime":537,"relativeEntities":580,"slug":20,"properties":581,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":582},{"VI":541},{"title":584},{"VI":585},"Shoaib Mansoori",{"id":587,"sortIndex":217,"researcher":20,"roles":588,"affiliations":589,"properties":595},"1b3be330-1580-4723-9e56-facfae05ea9f",[219],[590],{"id":20,"sortIndex":21,"affiliation":591,"properties":20},{"id":551,"createTime":552,"updateTime":553,"relativeEntities":592,"slug":555,"properties":593,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":594},{"VI":558},{"title":596},{"VI":597},"Maarten Van de Put",{"url":528,"publisher":599,"properties":627},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":600,"slug":10,"properties":601,"entityType":18,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21,"subjectFields":605,"manageAffiliations":606,"indexDatabases":607,"url":20,"thumbnailPath":20,"statistic":622,"gsStatistic":20,"type":20,"analyzePriority":20},[],{"issn":602,"eissn":603,"title":604},{"VOID":13},{"VOID":15},{"EN":17},[],[],[608,615],{"id":80,"indexDatabase":609,"url":93,"indexYears":94,"academicFieldIds":614,"indexDatabaseRanking":100},{"id":82,"createTime":83,"updateTime":84,"relativeEntities":610,"label":611,"description":612,"key":90,"publicationTags":613,"standard":20},[],{"EN":87,"VI":87},{"EN":87,"VI":89},[92],[96,97,98,99],{"id":102,"indexDatabase":616,"url":117,"indexYears":20,"academicFieldIds":621,"indexDatabaseRanking":20},{"id":104,"createTime":105,"updateTime":106,"relativeEntities":617,"label":618,"description":619,"key":113,"publicationTags":620,"standard":20},[],{"EN":109,"VI":109},{"VI":111,"EN":112},[115,116],[119,120],{"impactFactor":21,"impactFactorByYear":623,"i10Index":135,"i10IndexLast5Year":136,"totalPublication":137,"totalPublicationByYear":624,"totalCitation":154,"totalCitationByYear":625,"totalCitationPerPublication":173,"totalCitationPerPublicationByYear":626,"hindexLast5Year":194,"hindex":194},{"2012":123,"2013":124,"2014":125,"2015":126,"2016":127,"2017":128,"2018":129,"2019":130,"2020":131,"2021":132,"2022":133,"2023":134},{"2004":139,"2005":140,"2006":141,"2007":141,"2009":142,"2010":143,"2011":144,"2012":145,"2013":146,"2014":147,"2015":148,"2016":149,"2017":150,"2018":151,"2019":150,"2020":136,"2021":152,"2022":149,"2023":147,"2024":153},{"2004":156,"2005":157,"2006":158,"2007":159,"2009":157,"2010":160,"2011":161,"2012":162,"2013":163,"2014":164,"2015":165,"2016":166,"2017":166,"2018":167,"2019":168,"2020":169,"2021":170,"2022":171,"2023":172,"2024":153},{"2004":175,"2005":176,"2006":177,"2007":178,"2009":179,"2010":180,"2011":181,"2012":182,"2013":183,"2014":184,"2015":185,"2016":186,"2017":187,"2018":188,"2019":189,"2020":190,"2021":191,"2022":192,"2023":193,"2024":153},{"volume":628,"pages":630},{"VOID":629},"22",{"VOID":631},"1240-1256","2023-07-06",{"id":634,"createTime":635,"updateTime":636,"relativeEntities":637,"slug":638,"properties":639,"entityType":212,"verifyStatus":320,"verifyTime":636,"verifyNote":322,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21,"primaryUrl":648,"fullTextUrl":20,"authors":649,"publicationType":271,"publisherRelationship":701,"citationCount":20,"citationInfo":20,"publishDate":735,"publishYear":736,"citationAnalyzeStatus":19,"lastCitationAnalyze":20,"indexDatabases":20,"openAccess":20,"references":20,"isForceReanalyzing":308},"0683213f-947f-4c8d-9634-7723decbdc90","2023-12-13T12:11:53.597+00:00","2025-01-05T23:55:47.351+00:00",[],"Applicability-of-Quasi-3D-and-3D-MOSFET-Simulations-in-the-Atomistic-Regime",{"references":640,"abstract":642,"title":644,"doi":646},{"VOID":641},"A. Asenov, “Random dopant induced threshold voltage lowering and fluctuations in Sub-0.1 µm MOSFETs: A 3-D “Atomistic” Simulation Study, ” IEEE Trans. Elect. Devices, 45, 2505 (1998).\nA. Asenov, M. Jaraiz et al., “Integrated atomistic process and device simulation of decananometre MOSFETs, ” Proc. SISPAD-2002 (2002), p 87.\nR.W. Keyes, “The effect of randomness in the distribution of impurity atoms on FET threshold, ” Appl. Phys., 8, 251 (1975).\nX. Tang, V.K. De, and J.D. Meindl, “IntrinsicMOSFETparameter fluctuations due to random dopant placement, ” IEEE Trans. VLSI Systems, 5, 369 (1997).\nH.P. Tuinhout, “Impact of parametric mismatch and fluctuations on performance and yield of deep-submicron CMOS technologies, ” Proc. ESSDERC (2002), p 95\nI.D. Mayergoyz and P. Andrei, “Statistical analysis of semiconductor devices, ” J. Appl. Phys., 90, 3019 (2001).\nInternational Technology Road-Map for Semiconductors (SIA, San Jose, CA, 2001).",{"EN":643},"The importance of intrinsic fluctuations to the next generation of CMOS circuits has renewed interest in simplified, computationally inexpensive routes to the analysis of circuit parameters such as threshold voltage and subthreshold slope in ensembles of devices. A quasi-3D analytic approach to the statistical analysis of these parameters in 100 × 100 nm, 70 × 70 nm and 35 × 35 nm devices has been compared to the more computationally expensive full 3D simulation. The quasi-3D approach is useful in predicting variations in subthreshold slope, although its predictions become inaccurate for devices of approximately 35 × 35 nm or smaller. It is less effective in considering variations in threshold voltage, erroneously predicting a rise of the ensemble average threshold voltage and significantly exaggerating the threshold voltage variations over the ensemble.",{"EN":645},"Applicability of Quasi-3D and 3D MOSFET Simulations in the ‘Atomistic’ Regime",{"VOID":647},"10.1023\u002FB:JCEL.0000011464.17950.09","http:\u002F\u002Flink.springer.com\u002F10.1023\u002FB:JCEL.0000011464.17950.09",[650,665,677,689],{"id":651,"sortIndex":217,"researcher":20,"roles":652,"affiliations":653,"properties":662},"4fc9a240-43f3-4f28-a374-f27d2577bcf3",[219],[654],{"id":20,"sortIndex":21,"affiliation":655,"properties":20},{"id":656,"createTime":657,"updateTime":657,"relativeEntities":658,"slug":20,"properties":659,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"189fa069-b489-422b-960a-e127ac9daad4","2023-12-03T04:35:26.446+00:00",[],{"title":660},{"VI":661},"Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, UK",{"title":663},{"VI":664},"A.R. Brown",{"id":666,"sortIndex":153,"researcher":20,"roles":667,"affiliations":668,"properties":674},"f1a8aaec-59f7-4cdc-8357-ee65f73b84a7",[219],[669],{"id":20,"sortIndex":21,"affiliation":670,"properties":20},{"id":656,"createTime":657,"updateTime":657,"relativeEntities":671,"slug":20,"properties":672,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":673},{"VI":661},{"title":675},{"VI":676},"A. Lee",{"id":678,"sortIndex":236,"researcher":20,"roles":679,"affiliations":680,"properties":686},"bedc815f-9b90-47bc-9591-0aced806edd5",[219],[681],{"id":20,"sortIndex":21,"affiliation":682,"properties":20},{"id":656,"createTime":657,"updateTime":657,"relativeEntities":683,"slug":20,"properties":684,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":685},{"VI":661},{"title":687},{"VI":688},"A. Asenov",{"id":690,"sortIndex":21,"researcher":20,"roles":691,"affiliations":692,"properties":698},"01455471-2eeb-49fc-a63a-a3cc06091631",[219],[693],{"id":20,"sortIndex":21,"affiliation":694,"properties":20},{"id":656,"createTime":657,"updateTime":657,"relativeEntities":695,"slug":20,"properties":696,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":697},{"VI":661},{"title":699},{"VI":700},"S. Roy",{"url":648,"publisher":702,"properties":730},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":703,"slug":10,"properties":704,"entityType":18,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21,"subjectFields":708,"manageAffiliations":709,"indexDatabases":710,"url":20,"thumbnailPath":20,"statistic":725,"gsStatistic":20,"type":20,"analyzePriority":20},[],{"issn":705,"eissn":706,"title":707},{"VOID":13},{"VOID":15},{"EN":17},[],[],[711,718],{"id":80,"indexDatabase":712,"url":93,"indexYears":94,"academicFieldIds":717,"indexDatabaseRanking":100},{"id":82,"createTime":83,"updateTime":84,"relativeEntities":713,"label":714,"description":715,"key":90,"publicationTags":716,"standard":20},[],{"EN":87,"VI":87},{"EN":87,"VI":89},[92],[96,97,98,99],{"id":102,"indexDatabase":719,"url":117,"indexYears":20,"academicFieldIds":724,"indexDatabaseRanking":20},{"id":104,"createTime":105,"updateTime":106,"relativeEntities":720,"label":721,"description":722,"key":113,"publicationTags":723,"standard":20},[],{"EN":109,"VI":109},{"VI":111,"EN":112},[115,116],[119,120],{"impactFactor":21,"impactFactorByYear":726,"i10Index":135,"i10IndexLast5Year":136,"totalPublication":137,"totalPublicationByYear":727,"totalCitation":154,"totalCitationByYear":728,"totalCitationPerPublication":173,"totalCitationPerPublicationByYear":729,"hindexLast5Year":194,"hindex":194},{"2012":123,"2013":124,"2014":125,"2015":126,"2016":127,"2017":128,"2018":129,"2019":130,"2020":131,"2021":132,"2022":133,"2023":134},{"2004":139,"2005":140,"2006":141,"2007":141,"2009":142,"2010":143,"2011":144,"2012":145,"2013":146,"2014":147,"2015":148,"2016":149,"2017":150,"2018":151,"2019":150,"2020":136,"2021":152,"2022":149,"2023":147,"2024":153},{"2004":156,"2005":157,"2006":158,"2007":159,"2009":157,"2010":160,"2011":161,"2012":162,"2013":163,"2014":164,"2015":165,"2016":166,"2017":166,"2018":167,"2019":168,"2020":169,"2021":170,"2022":171,"2023":172,"2024":153},{"2004":175,"2005":176,"2006":177,"2007":178,"2009":179,"2010":180,"2011":181,"2012":182,"2013":183,"2014":184,"2015":185,"2016":186,"2017":187,"2018":188,"2019":189,"2020":190,"2021":191,"2022":192,"2023":193,"2024":153},{"volume":731,"pages":733},{"VOID":732},"2",{"VOID":734},"423-426","2003-12-01",2003,{"id":738,"createTime":739,"updateTime":740,"relativeEntities":741,"slug":742,"properties":743,"entityType":212,"verifyStatus":320,"verifyTime":752,"verifyNote":322,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21,"primaryUrl":753,"fullTextUrl":20,"authors":754,"publicationType":271,"publisherRelationship":821,"citationCount":20,"citationInfo":20,"publishDate":855,"publishYear":856,"citationAnalyzeStatus":19,"lastCitationAnalyze":20,"indexDatabases":20,"openAccess":20,"references":20,"isForceReanalyzing":308},"edc26cc1-f758-4e60-b4a1-cf2ed5905217","2024-01-14T20:26:14.378+00:00","2025-02-25T23:55:26.012+00:00",[],"Modeling-of-FinFET-3D-MC-Simulation-Using-FMM-and-Unintentional-Doping-Effects-on-Device-Operation",{"references":744,"abstract":746,"title":748,"doi":750},{"VOID":745},"SIA Technology Roadmap for Semiconductors, 2003 (http:\u002F\u002Fpublic.itrs.net\u002F).\nM. Lundstrom, Fundamental of Carrier Transport (Cambridge University press, October 2000).\nC.H. Wann, K. Noda, T. Tanaka, M. Yoshida, and C. Hu, “A comparative study of advanced MOSFET concepts,” IEEE Trans. Electron Devices, 43, 1742 (1996).\nH.S. Wong, K. Chan, and Y. Taur, “Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel,” IEDM Tech. Dig, 427 (1997).\nD. Hisamoto, W.-C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, T.-J. king, J. Boker, and C. Hu, “A folded-channel MOSFET for deep-sub-tenth micron era,” IEDM Tech. Dig., 1032 (1998).\nD. Hisamoto, W.-C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, T.-J. king, J. Boker, and C. Hu, “FinFET-A self-aligned double gate MOSFET scalable beyond 20 nm,” IEEE Trans. Electron Devices, 47, 2320 (2000).\nX. Huang, W.-C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi, K. Asano, V. Subramanian, T.-J. King, J. Bokor, and C. Hu, “Sub-50 nm FinFET: PMOS,” IEDM Tech. Dig., 67 (1999).\nC. Jacoboni and L. Reggiani, “The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials,” Rev. Modern Phys., 55, 645 (1983).\nH. Cheng, L. Greengard, and V. Rokhlin, “A fast adaptive multipole algorithm in three dimensions,” Journal of Computational Physics, 155, 468 (1999).\nMadMAx Optics Inc, “FMMpart3D library file”.",{"EN":747},"Novel device concepts such as dual gate SOI, Ultra thin body SOI, FinFETs, etc., have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. These novel devices suppress some of the Short Channel Effects (SCE) efficiently, but at the same time more physics based modeling is required to investigate device operation. In this paper, we use semi-classical 3D Monte Carlo device simulator to investigate important issues in the operation of FinFETs. Fast Multipole Method (FMM) has been integrated with the EMC scheme to replace the time consuming Poisson equation solver. Effect of unintentional doping for different device dimensions has been investigated. Impurities at the source side of the channel have most significant impact on the device performance.",{"EN":749},"Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation",{"VOID":751},"10.1007\u002Fs10825-004-7072-7","2025-02-25T23:55:26.011+00:00","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs10825-004-7072-7",[755,770,785,797,809],{"id":756,"sortIndex":145,"researcher":20,"roles":757,"affiliations":758,"properties":767},"9d0ce174-3a7e-4a8c-a64f-32b125aa89dc",[219],[759],{"id":20,"sortIndex":21,"affiliation":760,"properties":20},{"id":761,"createTime":762,"updateTime":762,"relativeEntities":763,"slug":20,"properties":764,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"929d14f6-1f08-481b-862b-9230a4421b6f","2023-12-11T09:58:26.647+00:00",[],{"title":765},{"VI":766},"Department of Mathematics, Arizona State University, Tempe, USA",{"title":768},{"VI":769},"Clemens Heitzinger",{"id":771,"sortIndex":217,"researcher":20,"roles":772,"affiliations":773,"properties":782},"59f11a69-e45e-4494-bc7b-32f921bbc16b",[219],[774],{"id":20,"sortIndex":21,"affiliation":775,"properties":20},{"id":776,"createTime":777,"updateTime":777,"relativeEntities":778,"slug":20,"properties":779,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"4645477d-6a3f-4a7f-80d5-485ed4a0a390","2023-12-29T19:25:27.399+00:00",[],{"title":780},{"VI":781},"Department of Electrical Engineering, Arizona State University, Tempe, USA",{"title":783},{"VI":784},"S. 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ACS Nano 8(11), 11730 (2014). https:\u002F\u002Fdoi.org\u002F10.1021\u002Fnn505868h\nGaddemane, G., Vandenberghe, W.G., Van de Put, M.L., Chen, S., Tiwari, S., Chen, E., Fischetti, M.V.: Theoretical studies of electronic transport in mono- and bi-layer phosphorene: a critical overview. arXiv:1801.08606v1 [cond-mat.mes-hall] (2018)\nTakagi, S., Toriumi, A., Iwase, M., Tango, H.: On the universality of inversion layer mobility in Si MOSFET’s: Part II-effects of surface orientation. IEEE Trans. ED 41(12), 2363 (1994). https:\u002F\u002Fdoi.org\u002F10.1109\u002F16.337450\nQiao, J., Kong, X., Hu, Z.-X., Yang, F., Ji, W.: High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fncomms5475\nWang, Y., Ding, Y.: Electronic structure and carrier mobilities of arsenene and antimonene nanoribbons: a first-principle study. Nanoscale Res. Lett. 10, 254 (2015). https:\u002F\u002Fdoi.org\u002F10.1186\u002Fs11671-015-0955-7\nJing, Y., Zhang, X., Zhou, Z.: Phosphorene: what can we know from computations? WIREs Comput. Mol. Sci. 6(1), 5 (2016). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fwcms.1234\nQiao, J., Kong, X., Hu, Z.-X., Yang, F., Ji, W.: High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fncomms5475\nFukuoka, S., Taen, T., Osada, T.: Electronic structure and the properties of phosphorene and few-layer black phosphorus. J. Phys. Soc. Jpn. 84, 121004 (2015). https:\u002F\u002Fdoi.org\u002F10.7566\u002FJPSJ.84.121004\nXu, Y., Zhang, H., Shao, H., Ni, G., Li, J., Lu, H., Zhang, R., Peng, B., Zhu, Y., Zhu, H., Soukoulis, C.M.: First-principles study on the electronic, optical, and transport properties of monolayer α- and β-GeSe. Phys. Rev. B 96, 245421 (2017). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.96.245421\nBoiko, I.I., Kozlovskiy, S.I.: Investigation of conductivity and piezoresistance of n-type silicon on basis of quantum kinetic equation and model distribution function. Sens. Actuators A 147, 17 (2008). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.sna.2008.03.002\nLiu, H., Du, Y., Deng, Y., Ye, P.D.: Semiconducting black phosphorus: synthesis, transport properties and electronic applications. Chem. Soc. Rev. 44, 2732 (2015). https:\u002F\u002Fdoi.org\u002F10.1039\u002FC4CS00257A\nBoiko, I.I.: Kinetics of Electron Gas Interacting with Fluctuating Potential. Naukova dumka, Kiev (1993). (in Russian)\nBoiko, I.I. (ed.): Transport of Carriers in Semiconductors. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (2009). (in Russian)\nKnezevic, I., Ramayya, E.B., Vasileska, D., Goodnick, S.M.: Diffusive transport in quasi-2D and quasi-1D electron systems. J. Comput. Theor. Nanosci. 6, 1725 (2009). https:\u002F\u002Fdoi.org\u002F10.1166\u002Fjctn.2009.1240\nStroscio, M.A., Dutta, M.: Phonons in Nanostructures. Cambridge University Press, Cambridge (2001)\nKozlovskiy, S.I., Sharan, N.N.: Piezoresistance effect in n-type silicon: from bulk to nanowires. J. Comput. Electron. 13(2), 515 (2014). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs10825-014-0563-2\nAndo, Y., Cappy, A.: Ensemble Monte Carlo simulation for electron transport in quantum wire structures. J. Appl. Phys. 74, 3983 (1993). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.354441\nFerry, D.K., Goodnick, S.M., Bird, J.: Transport in Nanostructures, 2nd edn. Cambridge University Press, Cambridge (2009)\nAndo, T., Fowler, A.B., Stern, F.: Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54(2), 437 (1982). https:\u002F\u002Fdoi.org\u002F10.1103\u002FRevModPhys.54.437\nJin, S., Fischetti, M.V., Tang, T.-W.: Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs. IEEE Trans. ED 54(9), 2191 (2007). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTED.2007.902712\nNarita, S., Terada, S., Mori, S., Muro, K., Akahama, Y., Endo, S.: Far-Infrared cyclotron resonance absorptions in black phosphorus single crystals. J. Phys. Soc. Jpn. 52, 3544 (1983). https:\u002F\u002Fdoi.org\u002F10.1143\u002FJPSJ.52.3544\nChang, J., Hobbs, C.: Theoretical study of phosphorene tunneling field effect transistors. Appl. Phys. Lett. 106, 083509 (2015). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4913842\nJain, A., McGaughey, A.J.H.: Strongly anisotropic in-plane thermal transport in single-layer black phosphorene. Sci. Rep. 5, 8051 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep08501\nAsahina, H., Morita, A.: Band structure and optical properties of black phosphorus. J. Phys. C Solid State Phys. 17, 1839 (1984). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0022-3719\u002F17\u002F11\u002F006\nAkahama, Y., Endo, S., Narita, S.: Electrical properties of black phosphorus single. J. Phys. Soc. Jpn. 52, 2148 (1983). https:\u002F\u002Fdoi.org\u002F10.1143\u002FJPSJ.52.2148\nZhang, Y., Rubio, A., Lay, G.L.: Emergent elemental two-dimensional materials beyond graphene. J. Phys. D Appl. Phys. 50(5), 053004 (2017). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1361-6463\u002Faa4e8b\nLin, D., Liu, Y., Liang, Z., Lee, H.-W., Sun, J., Wang, H., Yan, K., Xie, J., Cui, Y.: Layered reduced graphene oxide with nanoscale interlayer gaps as a stable host for lithium metal anodes. Nat. Nanotech. 11, 626 (2016). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2016.32\nGillgren, N., Wickramaratne, D., Shi, Y., Espiritu, T., Yang, J., Hu, J., Wei, J., Liu, X., Mao, Z., Watanabe, K., Taniguchi, T., Bockrath, M., Barlas, Y., Lake, R.K., Lau, C.N.: Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures. 2D Mater (2015). https:\u002F\u002Fdoi.org\u002F10.1088\u002F2053-1583\u002F2\u002F1\u002F011001\nLi, L., Ye, G.J., Tran, V., Fei, R., Chen, G., Wang, H., Wang, J., Watanabe, K., Taniguchi, T., Yang, L., Chen, X.H., Zhang, Y.: Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films. Nat. Nanotechnol. 10, 608–613 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2015.91\nXia, F., Wang, H., Jia, Y.: Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fncomms5458\nPirovano, A., Lacaita, A.L., Zandler, G., Oberhuber, R.: Explaining the dependences of the hole and electron mobilities in Si inversion layers. IEEE Trans ED 47(4), 718 (2000). https:\u002F\u002Fdoi.org\u002F10.1109\u002F16.830985\nDas, S., Appenzeller, J.: Screening and interlayer coupling in multilayer MoS2. Phys. Status Solidi RRL 7(4), 268 (2013). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fpssr.201307015",{"EN":867},"Analytic expressions for the low-field mobility have been obtained in black phosphorus crystals and multilayer phosphorene. Acoustic and optical phonons, charged impurities and surface roughness are adopted as the scattering system. Theoretical considerations are based on a quantum kinetic equation and special form of the non-equilibrium distribution function (shifted Fermi distribution). Our calculations reveal that the hole mobility in black phosphorus crystals is limited by scattering with both acoustic and optical phonons over a wide temperature range of 10–400 K. The hole mobility in multilayer phosphorene is thus limited by impurity and optical phonon scattering in this temperature range.",{"EN":869},"A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphorene",{"VOID":871},"10.1007\u002Fs10825-018-1255-0","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs10825-018-1255-0",[874,889,901],{"id":875,"sortIndex":153,"researcher":20,"roles":876,"affiliations":877,"properties":886},"2d6aa57c-9247-4984-862f-8459f521b231",[219],[878],{"id":20,"sortIndex":21,"affiliation":879,"properties":20},{"id":880,"createTime":881,"updateTime":881,"relativeEntities":882,"slug":20,"properties":883,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"bc011b2a-990a-42e6-898f-e7d23884174f","2024-01-15T11:30:34.687+00:00",[],{"title":884},{"VI":885},"V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine",{"title":887},{"VI":888},"S. I. Kozlovskiy",{"id":890,"sortIndex":217,"researcher":20,"roles":891,"affiliations":892,"properties":898},"43eaa702-61d0-48aa-ac62-80d86cdc8e0a",[219],[893],{"id":20,"sortIndex":21,"affiliation":894,"properties":20},{"id":880,"createTime":881,"updateTime":881,"relativeEntities":895,"slug":20,"properties":896,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":897},{"VI":885},{"title":899},{"VI":900},"N. N. 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K. Kobayashi, H. Aikawa, S. Katsumoto, and Y. Iye, Phys. Rev. Lett., 85, 256806 (2002).\n2. M. Sigrist, A. Fuhrer, T. Ihn, K. Ensslin, W. Wegscheider, and M. Bichler, Physica E, 22, 530 (2004).\n3. U.F. Keyser, S. Borck, R.J. Haug, M. Bichler, G. Abstreiter, and W. Wegscheider, Semiconductor Science and Technology, 17, L22 (2002).\n4. C.S. Kim, A.M. Satanin, Y.S. Joe, and R.M. Cosby, Phys. Rev. B, 60, 10962 (1999).\n5. E.R. Hedin, R.M. Cosby, A.M. Satanin, and Y.S. Joe, J. Appl. Phys., 97, 063712 (2005).\n6. Z. Shao, W. Porod, and C.S. Lent, Phys. Rev. B, 49, 7453 (1994).",{"EN":958},"Stimulated by recent intriguing experiments with a quantum dot in an Aharonov-Bohm (AB) ring, we investigate novel resonant phenomena by studying the total transmission probability of nanoscale AB rings with an embedded scattering center in one arm and a magnetic flux passing through its center. In the AB ring with double coupled-quantum dots (QDs), we show that the overlapping of Fano resonances arises from the strong interaction between two quasi-bound levels in the coupled QDs, and that the zero of the Fano resonance is shifted to the complex plane. In addition, we also study the effects of an asymmetry in the arm by inserting an attractive potential well (dot) in one arm. The combined transmission resonance effects as functions of variables of the ring structure and the potential are presented. It is shown that an attractive potential in one of the arms in the AB ring generates an asymmetric Fano resonance in the transmission.",{"EN":960},"Fano Resonance Through Quantum Dots in Tunable Aharonov-Bohm Rings",{"VOID":962},"10.1007\u002Fs10825-005-7123-8","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs10825-005-7123-8",[965,980,992,1004,1026],{"id":966,"sortIndex":236,"researcher":20,"roles":967,"affiliations":968,"properties":977},"30c7f360-e9a7-40cc-bafd-c7e38812300e",[219],[969],{"id":20,"sortIndex":21,"affiliation":970,"properties":20},{"id":971,"createTime":972,"updateTime":972,"relativeEntities":973,"slug":20,"properties":974,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"150ac8df-4aa0-407b-a760-15e8466c7c8d","2024-01-23T00:39:53.868+00:00",[],{"title":975},{"VI":976},"Center for Computational Nanoscience, Department of Physics and Astronomy, Ball State University, Muncie, USA",{"title":978},{"VI":979},"R. M. Cosby",{"id":981,"sortIndex":153,"researcher":20,"roles":982,"affiliations":983,"properties":989},"24003d65-c3e9-4174-90d3-a8d872e7297d",[219],[984],{"id":20,"sortIndex":21,"affiliation":985,"properties":20},{"id":971,"createTime":972,"updateTime":972,"relativeEntities":986,"slug":20,"properties":987,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":988},{"VI":976},{"title":990},{"VI":991},"J. S Kim",{"id":993,"sortIndex":217,"researcher":20,"roles":994,"affiliations":995,"properties":1001},"aaeb6d3b-04a0-4c1b-8d59-213046a254b6",[219],[996],{"id":20,"sortIndex":21,"affiliation":997,"properties":20},{"id":971,"createTime":972,"updateTime":972,"relativeEntities":998,"slug":20,"properties":999,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":1000},{"VI":976},{"title":1002},{"VI":1003},"E. R. Hedin",{"id":1005,"sortIndex":145,"researcher":20,"roles":1006,"affiliations":1007,"properties":1023},"0abc0a9f-a879-41e1-8027-59cfe16a8a78",[219],[1008,1018],{"id":1009,"sortIndex":153,"affiliation":1010,"properties":1017},"cfcf57cc-a109-4a90-946c-20443fcfc952",{"id":1011,"createTime":1012,"updateTime":1012,"relativeEntities":1013,"slug":20,"properties":1014,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"3cccf841-f4c5-437f-bb4a-eca8f7a8bfef","2023-12-06T08:47:37.291+00:00",[],{"title":1015},{"VI":1016},"Institute for Physics of Microstructures, Nizhny Novgorod, Russia",{},{"id":20,"sortIndex":21,"affiliation":1019,"properties":20},{"id":971,"createTime":972,"updateTime":972,"relativeEntities":1020,"slug":20,"properties":1021,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":1022},{"VI":976},{"title":1024},{"VI":1025},"A. M. Satanin",{"id":1027,"sortIndex":21,"researcher":20,"roles":1028,"affiliations":1029,"properties":1035},"71d3f243-6cf0-4131-89ee-0515c5529b68",[219],[1030],{"id":20,"sortIndex":21,"affiliation":1031,"properties":20},{"id":971,"createTime":972,"updateTime":972,"relativeEntities":1032,"slug":20,"properties":1033,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":1034},{"VI":976},{"title":1036},{"VI":1037},"Y. S. Joe",{"url":963,"publisher":1039,"properties":1067},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":1040,"slug":10,"properties":1041,"entityType":18,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21,"subjectFields":1045,"manageAffiliations":1046,"indexDatabases":1047,"url":20,"thumbnailPath":20,"statistic":1062,"gsStatistic":20,"type":20,"analyzePriority":20},[],{"issn":1042,"eissn":1043,"title":1044},{"VOID":13},{"VOID":15},{"EN":17},[],[],[1048,1055],{"id":80,"indexDatabase":1049,"url":93,"indexYears":94,"academicFieldIds":1054,"indexDatabaseRanking":100},{"id":82,"createTime":83,"updateTime":84,"relativeEntities":1050,"label":1051,"description":1052,"key":90,"publicationTags":1053,"standard":20},[],{"EN":87,"VI":87},{"EN":87,"VI":89},[92],[96,97,98,99],{"id":102,"indexDatabase":1056,"url":117,"indexYears":20,"academicFieldIds":1061,"indexDatabaseRanking":20},{"id":104,"createTime":105,"updateTime":106,"relativeEntities":1057,"label":1058,"description":1059,"key":113,"publicationTags":1060,"standard":20},[],{"EN":109,"VI":109},{"VI":111,"EN":112},[115,116],[119,120],{"impactFactor":21,"impactFactorByYear":1063,"i10Index":135,"i10IndexLast5Year":136,"totalPublication":137,"totalPublicationByYear":1064,"totalCitation":154,"totalCitationByYear":1065,"totalCitationPerPublication":173,"totalCitationPerPublicationByYear":1066,"hindexLast5Year":194,"hindex":194},{"2012":123,"2013":124,"2014":125,"2015":126,"2016":127,"2017":128,"2018":129,"2019":130,"2020":131,"2021":132,"2022":133,"2023":134},{"2004":139,"2005":140,"2006":141,"2007":141,"2009":142,"2010":143,"2011":144,"2012":145,"2013":146,"2014":147,"2015":148,"2016":149,"2017":150,"2018":151,"2019":150,"2020":136,"2021":152,"2022":149,"2023":147,"2024":153},{"2004":156,"2005":157,"2006":158,"2007":159,"2009":157,"2010":160,"2011":161,"2012":162,"2013":163,"2014":164,"2015":165,"2016":166,"2017":166,"2018":167,"2019":168,"2020":169,"2021":170,"2022":171,"2023":172,"2024":153},{"2004":175,"2005":176,"2006":177,"2007":178,"2009":179,"2010":180,"2011":181,"2012":182,"2013":183,"2014":184,"2015":185,"2016":186,"2017":187,"2018":188,"2019":189,"2020":190,"2021":191,"2022":192,"2023":193,"2024":153},{"volume":1068,"pages":1070},{"VOID":1069},"4",{"VOID":1071},"129-133","2005-04-01",2005,{"id":1075,"createTime":1076,"updateTime":1077,"relativeEntities":1078,"slug":1079,"properties":1080,"entityType":212,"verifyStatus":320,"verifyTime":1077,"verifyNote":322,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21,"primaryUrl":1089,"fullTextUrl":20,"authors":1090,"publicationType":271,"publisherRelationship":1118,"citationCount":20,"citationInfo":20,"publishDate":1151,"publishYear":412,"citationAnalyzeStatus":19,"lastCitationAnalyze":20,"indexDatabases":20,"openAccess":20,"references":20,"isForceReanalyzing":308},"0f2cb8d0-22bc-4b62-88c5-8cc0e998404e","2023-12-31T20:57:12.128+00:00","2024-12-14T23:54:29.184+00:00",[],"Modified-differential-overlap-factor-and-modal-gain-equalization-criteria-based-comparative-analysis-of-4M-EDFA-980-1480-nm-towards-identification-of-a-unique-erbium-doping-profile-for-the-4M-EDFA1480-nm-system",{"references":1081,"abstract":1083,"title":1085,"doi":1087},{"VOID":1082},"Richardson, D.J., Fini, J.M., Nelson, L.E.: Space division multiplexing in optical fibres. Nat. Photon. 7(5), 354–362 (2013)\nZhu, B., et al.: Space-, wavelength-, polarization-division multiplexed transmission of 56-Tb\u002Fs over a 76.8-km seven-core fiber. In: National Fiber Optic Engineers Conference. Optica Publishing Group. PDPB7 (2011)\nVigneswaran, D., Rajan, Singh, M., Malhotra, J.: System investigations of few-mode erbium-doped fiber amplifier (FM-EDFA) for vortex mode amplifications. J. Comput. Electron. 20(4), 1549–1559 (2021). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs10825-021-01721-8\nPuttnam, B.J., et al.: High data-rate and long distance MCF transmission with 19-core C+L band cladding-pumped EDFA. J. Lightwave Technol. 38(1), 123–130 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJLT.2019.2946879\nChang, Y., et al.: Demonstration of an all-fiber cladding-pumped FM-EDFA with low differential modal gain. Opt. Laser Technol. 155, 108446 (2022). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.optlastec.2022.108446\nKim, M.S., Kim, B.G., Bae, S.H., Chung, Y.C.: Effects of multi-level format in MMF system based on mode-field matched center-launching technique. IEEE Photon. Technol. Lett. 30(22), 1972–1975 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLPT.2018.2873822\nSaitoh, K.: Few-mode multi-core fibres: weakly-coupling and randomly-coupling. In: 2020 European Conference on Optical Communications, pp. 1–4. IEEE (2020)\nWakayama, Y., Soma, D., Beppu, S., Sumita, S., Igarashi, K., Tsuritani, T.: 266.1-Tbit\u002Fs transmission over 90.4-km 6-mode fiber with inline dual C-band 6-mode EDFA. J. Lightwave Technol. 37(2), 404–410 (2019). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJLT.2018.2876730\nSalsi M., et al.: A six-mode erbium-doped fiber amplifier. In: European Conference and Exhibition on Optical Communication, Optical Society of America. Th-3 (2012)\nZhu, J., et al.: Weakly-coupled MDM-WDM amplification and transmission based on compact FM-EDFA. J. Lightwave Technol. 38(18), 5163–5169 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJLT.2020.3001008\nBai, N., Ip, E., Wang, T., Li, G.: Multimode fiber amplifier with tunable modal gain using a reconfigurable multimode pump. Opt. Express 19(17), 16601–16611 (2011)\nQayoom, T., Qazi, G.: On the analysis and comparison of decoupled modal gain equalization systems for four-mode (4M)-EDFAs. Optik (2020). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.ijleo.2020.164498\nGaur, A., Rastogi, V.: Design and analysis of annulus core few mode EDFA for modal gain equalization. IEEE Photon. Technol. Lett. 28(10), 1057–1060 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLPT.2016.2528502\nGaur, A., Rastogi, V.: Gain equalization of six mode groups using trench-assisted annular core EDFA. In: 2015 Workshop on Recent Advances in Photonics (WRAP), pp. 1–4. IEEE (2015)\nRyf, R., et al.: 32-bit\u002Fs\u002FHz spectral efficiency WDM transmission over 177-km few-mode fiber. In: Optical Fiber Communication Conference. Optical Society of America (2013)\nIp, E.: Gain equalization for few-mode fiber amplifiers beyond two propagating mode groups. IEEE Photon. Technol. Lett. 24(21), 1933–1936 (2012). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLPT.2012.2219521\nQayoom, T., Qazi, G., Najeeb-ud-din, H.: Evolution of amplified spontaneous emission and characterization of an optimized two-mode EDFA system obtained from an extended analytical model. J. Comput. Electron. 19(4), 1660–1669 (2020). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs10825-020-01566-7\nKang, Q., et al.: Accurate modal gain control in a multimode erbium doped fiber amplifier incorporating ring doping and a simple LP01 pump configuration. Opt. Express 20(19), 20835 (2012). https:\u002F\u002Fdoi.org\u002F10.1364\u002Foe.20.020835\nQayoom, T., Qazi, G., Najeeb-ud-din, H.: Design, characterization and performance evaluation of few-mode EDFA system with propagation up to six modes. Opt. Quantum Electron. 52(10), 1–19 (2020). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs11082-020-02561-9\nEznaveh Z.S., et al.: Ultra-low DMG multimode EDFA. In: Optical Fiber Communication Conference. Optica Publishing Group. Th4A-4 (2017)\nFang, Y., Zeng, Y., Qin, Y., Xu, O., Li, J., Fu, S.: Design of ring-core few-mode-EDFA with the enhanced saturation input signal power and low differential modal gain. IEEE Photon. J. 13(4), 1–6 (2021). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPHOT.2021.3095123\nOno, H., Miyamoto, Y., Mizuno, T., Yamada, M.: Gain control in multi-core erbium-doped fiber amplifier with cladding and core hybrid pumping. J. Lightwave Technol. 37(13), 3365–3372 (2019). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJLT.2019.2915939\nZhang, Z., et al.: 21 spatial mode erbium-doped fiber amplifier for mode division multiplexing transmission. Opt. Lett. 43(7), 1550 (2018). https:\u002F\u002Fdoi.org\u002F10.1364\u002Fol.43.001550\nMalakzadeh, A., Pashaie, R., Mansoursamaei, M.: Gain and noise figure performance of an EDFA pumped at 980 nm or 1480 nm for DOFSs. Opt. Quantum Electron. 52(2), 1–16 (2020). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs11082-019-2186-0\nJeurink, S., Krummrich, P.M.: Multimode EDFA with Scalable Mode Selective Gain Control at 1480-nm Pump Wavelength. IEEE Photon. Technol. Lett. 30(9), 849–852 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLPT.2018.2819241\nDesurvire, E.: Erbium-Doped Fiber Amplifiers: Principles and Applications. Wiley, Hoboken (1994)\nGhatak, A., Thyagarajan, K.: An Introduction to Fiber Optics. Cambridge University Press, Cambridge (1998)\nGaur, A., Kumar, G., Rastogi, V.: Dual-core few mode EDFA for amplification of 20 modes. Opt. Quantum Electron. 50(2), 1–10 (2018). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs11082-018-1322-6\nHerbster, A., Romero, M.A.: On the design of few-mode Er-doped fiber amplifiers for space-division multiplexing optical communications systems. Opt. Model. Des. III(9131), 268–276 (2014). https:\u002F\u002Fdoi.org\u002F10.1117\u002F12.2052038\nOptiSystem version 16, Optical communication system design software, Canada.",{"EN":1084},"A four-mode erbium-doped fiber amplifier (4M-EDFA) system with \n                \n                  \n                \n                $${\\mathrm{LP}}_{01;980 \\mathrm{nm}}$$\n                \n               and \n                \n                  \n                \n                $${\\mathrm{LP}}_{01;1480 \\mathrm{nm}}$$\n                \n               pump wavelengths  is explored analytically using a coupled mode equation and subsequently through simulations by implementing modified erbium-doped profile-based systems. We aim to reduce the inherent differential modal gain (DMG) and differential spectral gain (DSG) between signal modes \n                \n                  \n                \n                $${\\mathrm{LP}}_{01}, {\\mathrm{LP}}_{11}, {\\mathrm{LP}}_{21}$$\n                \n               and \n                \n                  \n                \n                $${\\mathrm{LP}}_{02}$$\n                \n               while maintaining high modal gain. For in-depth performance evaluation and comparison of 4M-\n                \n                  \n                \n                $${\\mathrm{EDFA}}_{980\\, \\mathrm{nm};1480\\,\\mathrm{nm}}$$\n                \n               systems, novel differential performance parameters are introduced and explored. Differential modal noise figure (DMNF) and differential spectral noise figure (DSNF) parameters quantify the impact of system amplified spontaneous emission. The conventional erbium ion inclusive transverse overlap factor is modified (\n                \n                  \n                \n                $${\\eta }_{\\mathrm{sp}}$$\n                \n              ) using a unit-less erbium ion profile over a scale of 0–1. Differential modal overlap factor (DMOF) and differential spectral overlap factor (DSOF) are shown to be strongly correlated with DMG and DSG, respectively, and prove to be more decisive performance evaluation parameters than \n                \n                  \n                \n                $${\\eta }_{\\mathrm{sp}}$$\n                \n              . Obtaining low DMOF and DSOF values with the 1480 nm pump prompts the investigation of 4M-\n                \n                  \n                \n                $${\\mathrm{EDFA}}_{1480\\,\\mathrm{nm}}$$\n                \n               with erbium ion profile variants: uniform \n                \n                  \n                \n                $$N\\left(r\\right)$$\n                \n              = 1, \n                \n                  \n                \n                $${N}_{\\mathrm{inv}}\\left(r\\right)$$\n                \n               and \n                \n                  \n                \n                $${N}_{\\mathrm{opt} }(r)$$\n                \n              . \n                \n                  \n                \n                $${N}_{\\mathrm{inv}}\\left(r\\right)$$\n                \n               is extracted from the inverse sum of the normalized signal intensity function. Subsequently, differential modal gain equalization criteria are used which aid in unique linearizing \n                \n                  \n                \n                $${N}_{\\mathrm{opt} }(r)$$\n                \n               profile identification. In the 4M-EDFA system, the highest values (in dB) of DMG, DSG, DMNF and DSNF are 13.295, 3.9717, 5.9996, 11.0649, respectively, for the 980 nm uniform erbium ion profile system. The proposed \n                \n                  \n                \n                $${N}_{\\mathrm{opt}}(r)$$\n                \n               profile significantly reduces these parameters (in dB) to 2.0558, 2.4997, 2.77 and 3.879, respectively, for the 1480 nm system.",{"EN":1086},"Modified differential overlap factor and modal gain equalization criteria-based comparative analysis of 4M-EDFA 980;1480 nm towards identification of a unique erbium doping profile for the 4M-EDFA1480 nm system",{"VOID":1088},"10.1007\u002Fs10825-022-02000-w","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs10825-022-02000-w",[1091,1106],{"id":1092,"sortIndex":153,"researcher":20,"roles":1093,"affiliations":1094,"properties":1103},"5bacfd0c-c78b-48dc-9585-7af05009569a",[219],[1095],{"id":20,"sortIndex":21,"affiliation":1096,"properties":20},{"id":1097,"createTime":1098,"updateTime":1098,"relativeEntities":1099,"slug":20,"properties":1100,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"6641177e-822c-44be-a52a-3cea80a4bc5b","2023-12-17T22:54:28.735+00:00",[],{"title":1101},{"VI":1102},"Department of Electronics and Communication Engineering, National Institute of Technology Srinagar, Srinagar, India",{"title":1104},{"VI":1105},"Gausia Qazi",{"id":1107,"sortIndex":21,"researcher":20,"roles":1108,"affiliations":1109,"properties":1115},"3ecfabeb-35b1-48ee-84b6-33079b166ac1",[219],[1110],{"id":20,"sortIndex":21,"affiliation":1111,"properties":20},{"id":1097,"createTime":1098,"updateTime":1098,"relativeEntities":1112,"slug":20,"properties":1113,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":1114},{"VI":1102},{"title":1116},{"VI":1117},"Suhail K. Naik",{"url":1089,"publisher":1119,"properties":1147},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":1120,"slug":10,"properties":1121,"entityType":18,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21,"subjectFields":1125,"manageAffiliations":1126,"indexDatabases":1127,"url":20,"thumbnailPath":20,"statistic":1142,"gsStatistic":20,"type":20,"analyzePriority":20},[],{"issn":1122,"eissn":1123,"title":1124},{"VOID":13},{"VOID":15},{"EN":17},[],[],[1128,1135],{"id":80,"indexDatabase":1129,"url":93,"indexYears":94,"academicFieldIds":1134,"indexDatabaseRanking":100},{"id":82,"createTime":83,"updateTime":84,"relativeEntities":1130,"label":1131,"description":1132,"key":90,"publicationTags":1133,"standard":20},[],{"EN":87,"VI":87},{"EN":87,"VI":89},[92],[96,97,98,99],{"id":102,"indexDatabase":1136,"url":117,"indexYears":20,"academicFieldIds":1141,"indexDatabaseRanking":20},{"id":104,"createTime":105,"updateTime":106,"relativeEntities":1137,"label":1138,"description":1139,"key":113,"publicationTags":1140,"standard":20},[],{"EN":109,"VI":109},{"VI":111,"EN":112},[115,116],[119,120],{"impactFactor":21,"impactFactorByYear":1143,"i10Index":135,"i10IndexLast5Year":136,"totalPublication":137,"totalPublicationByYear":1144,"totalCitation":154,"totalCitationByYear":1145,"totalCitationPerPublication":173,"totalCitationPerPublicationByYear":1146,"hindexLast5Year":194,"hindex":194},{"2012":123,"2013":124,"2014":125,"2015":126,"2016":127,"2017":128,"2018":129,"2019":130,"2020":131,"2021":132,"2022":133,"2023":134},{"2004":139,"2005":140,"2006":141,"2007":141,"2009":142,"2010":143,"2011":144,"2012":145,"2013":146,"2014":147,"2015":148,"2016":149,"2017":150,"2018":151,"2019":150,"2020":136,"2021":152,"2022":149,"2023":147,"2024":153},{"2004":156,"2005":157,"2006":158,"2007":159,"2009":157,"2010":160,"2011":161,"2012":162,"2013":163,"2014":164,"2015":165,"2016":166,"2017":166,"2018":167,"2019":168,"2020":169,"2021":170,"2022":171,"2023":172,"2024":153},{"2004":175,"2005":176,"2006":177,"2007":178,"2009":179,"2010":180,"2011":181,"2012":182,"2013":183,"2014":184,"2015":185,"2016":186,"2017":187,"2018":188,"2019":189,"2020":190,"2021":191,"2022":192,"2023":193,"2024":153},{"volume":1148,"pages":1149},{"VOID":629},{"VOID":1150},"648-668","2023-01-18",{"id":1153,"createTime":1154,"updateTime":1155,"relativeEntities":1156,"slug":1157,"properties":1158,"entityType":212,"verifyStatus":320,"verifyTime":1171,"verifyNote":322,"syncStatus":19,"languages":20,"translateLanguages":1172,"viewCount":21,"primaryUrl":1174,"fullTextUrl":20,"authors":1175,"publicationType":271,"publisherRelationship":1217,"citationCount":20,"citationInfo":20,"publishDate":735,"publishYear":736,"citationAnalyzeStatus":19,"lastCitationAnalyze":20,"indexDatabases":20,"openAccess":20,"references":20,"isForceReanalyzing":308},"2915ca8a-3b90-4fc9-a896-4c5dd1376245","2023-12-28T10:43:07.384+00:00","2025-02-18T23:52:25.605+00:00",[],"Comparison-of-Double-Gate-MOSFETs-and-FinFETs-with-Monte-Carlo-Simulation",{"references":1159,"abstract":1161,"title":1164,"doi":1167,"keywords":1169},{"VOID":1160},"Semiconductor Industry Association. (2001). International Technology Roadmap for Semiconductors. Online at: http:\u002F\u002F public.itrs.net\u002FFiles\u002F2001ITRS\u002FHome.htm.\nY. Choi, N. Lindert, P. Xuan, S. Tang, D. Ha, E. Anderson, T. King, J. Bokor, and C. Hu, IEDM Tech. Dig., 421 (2001).\nG. Pei, J. Kedzierski, P. Oldiges, M. Ieong, and E.C. Kan, IEEE Trans. Electron Devices, 49, 1411 (2002).\nH. Tsuchiya and T. Miyoshi, IEICE Trans. Electron, E82-C, 880 (1999).\nD. K. Ferry, Superlattice Microstructures, 27, 61 (2000).\nM.V. Fischettiand S.F. Laux, Physical Review B, 48, 2344 (1993).\nS. Yamakawa, H. Ueno, K. Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, and U. Ravaioli, J.Appl. Physics, 79, 911 (1996).\nA.S. Spinelli, A. Benvenuti, and A. Pacelli, IEEE Trans. Electron Devices, 45, 1342.\nS.A. Hareland, S. Krishnamurthy, S. Jallepalli, C.-F. Yeap, K. Hasnat, A.F Tasch,and C.M. Maziar, IEEE Trans. Electron Devices, 43, 90 (1996).\nB. Winstead and U. Ravaioli, IEEE Trans. Electron Devices, 50, 440 (2003).\nA. Duncan, U. Ravaioli, and J. Jakumeit, IEEE Trans. Electron Devices, 45, 867 (1998).",{"EN":1162,"VI":1163},"A full-band Monte Carlo simulator has been used to analyze and compare the performance of n-channel double-gate MOSFETs and FinFETs. Size quantization effects were accounted for by using a quantum correction based on Schrödinger equation. FinFETs are a variation of typical double-gate devices with the gate surrounding the channel on three sides. From our simulations, we observed that the quantization effects in double-gate devices are less significant as compared to bulk MOSFETs. The total sheet charge density drops only slightly as the depletion of charge at the interface is counterbalanced by the increased volume inversion effect. We also observed an appreciable drop in average velocity distribution when quantum corrections were applied. For FinFETs, the fin extension lengths on either side of the gate affect the device performance significantly. These underlap regions have low carrier concentration and behave as large resistors. The current drops non-linearly with increasing fin extension lengths.","Một mô phỏng Monte Carlo toàn băng đã được sử dụng để phân tích và so sánh hiệu suất của MOSFET hai cổng n và FinFET. Các hiệu ứng định lượng kích thước đã được tính đến bằng cách sử dụng một sự điều chỉnh lượng tử dựa trên phương trình Schrödinger. FinFET là một biến thể của các thiết bị hai cổng điển hình với cổng bao quanh kênh ở ba mặt. Từ các mô phỏng của chúng tôi, chúng tôi nhận thấy rằng các hiệu ứng định lượng trong các thiết bị hai cổng ít quan trọng hơn so với MOSFET khối. Mật độ điện tích tổng thể chỉ giảm nhẹ khi sự suy giảm điện tích tại giao diện được bù đắp bởi hiệu ứng đảo ngược thể tích gia tăng. Chúng tôi cũng nhận thấy sự giảm đáng kể trong phân phối vận tốc trung bình khi các điều chỉnh lượng tử được áp dụng. Đối với FinFET, chiều dài mở rộng fin ở mỗi bên của cổng ảnh hưởng đáng kể đến hiệu suất của thiết bị. Các vùng không chồng lấp này có nồng độ mang điện thấp và hành xử như những điện trở lớn. Dòng điện giảm không tuyến tính khi chiều dài mở rộng fin tăng lên.",{"EN":1165,"VI":1166},"Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation","So sánh MOSFET hai cổng và FinFET bằng mô phỏng Monte Carlo",{"VOID":1168},"10.1023\u002FB:JCEL.0000011404.60973.8a",{"VI":1170},"MOSFET hai cổng, FinFET, mô phỏng Monte Carlo, hiệu ứng định lượng kích thước, điều chỉnh lượng tử","2025-02-05T23:53:49.470+00:00",[1173],"VI","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1023\u002FB:JCEL.0000011404.60973.8a",[1176,1193,1205],{"id":1177,"sortIndex":153,"researcher":20,"roles":1178,"affiliations":1179,"properties":1190},"64c64400-d1a1-4b71-86f2-e23b3909c33d",[219],[1180],{"id":20,"sortIndex":21,"affiliation":1181,"properties":20},{"id":1182,"createTime":1183,"updateTime":1184,"relativeEntities":1185,"slug":1186,"properties":1187,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},"b8a29c41-e7cc-4da2-910e-9d78a366a832","2024-01-26T12:44:40.353+00:00","2024-09-01T23:00:31.830+00:00",[],"Beckman-Institute-University-of-Illinois-at-Urbana-Champaign-Urbana-USA",{"title":1188},{"VI":1189},"Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, USA",{"title":1191},{"VI":1192},"Mohamed Mohamed",{"id":1194,"sortIndex":217,"researcher":20,"roles":1195,"affiliations":1196,"properties":1202},"325bf0f2-9531-4b9b-bdc2-ac31bdfd01d4",[219],[1197],{"id":20,"sortIndex":21,"affiliation":1198,"properties":20},{"id":1182,"createTime":1183,"updateTime":1184,"relativeEntities":1199,"slug":1186,"properties":1200,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":1201},{"VI":1189},{"title":1203},{"VI":1204},"Umberto Ravaioli",{"id":1206,"sortIndex":21,"researcher":20,"roles":1207,"affiliations":1208,"properties":1214},"337acf12-dfce-4021-94de-c3933a216b0a",[219],[1209],{"id":20,"sortIndex":21,"affiliation":1210,"properties":20},{"id":1182,"createTime":1183,"updateTime":1184,"relativeEntities":1211,"slug":1186,"properties":1212,"entityType":64,"verifyStatus":19,"verifyTime":20,"verifyNote":20,"syncStatus":19,"languages":20,"translateLanguages":20,"viewCount":21},[],{"title":1213},{"VI":1189},{"title":1215},{"VI":1216},"Gulzar A. 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