[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"_public_publisher_all{\"sortAscending\":false,\"sortField\":\"updateTime\",\"page\":0,\"size\":10,\"facet\":true,\"searchKey\":\"\"}":3,"_public_publisher_byId_4a29c620-17a4-483f-8081-3c57c26ef328":656,"_public_publication_all{\"sortAscending\":false,\"sortField\":\"totalCitation\",\"page\":0,\"size\":10,\"facet\":true,\"searchKey\":\"publisherId:4a29c620-17a4-483f-8081-3c57c26ef328,\"}":815},{"meta":4,"data":6},{"total":5},"117",[7,60,176,207,299,413,445,480,543,572],{"id":8,"createTime":9,"updateTime":10,"relativeEntities":11,"slug":12,"properties":13,"entityType":24,"verifyStatus":25,"verifyTime":26,"verifyNote":27,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":29,"subjectFields":30,"manageAffiliations":31,"indexDatabases":32,"url":33,"thumbnailPath":34,"statistic":35,"gsStatistic":26,"type":26,"analyzePriority":26},"5a09599f-54d1-44c3-8f16-3847ac552024","2023-08-17T04:28:50.832+00:00","2025-10-13T23:58:52.517+00:00",[],"T%E1%BA%A1p-ch%C3%AD-Truy%E1%BB%81n-nhi%E1%BB%85m-Vi%E1%BB%87t-Nam",{"country":14,"issn":16,"introduce":18,"title":21},{"VOID":15},"VN",{"VOID":17},"08667829",{"EN":19,"VI":20},"{\"ops\":[{\"insert\":\"Vietnam Journal of Infectious Diseases is a social - professional forum of the Vietnam Society for Infectious Diseases, whose responsibility is to introduce the researches, the scientific advances in Vietnam and from the world; to contribute to the improvement of knowledges for health care staffs about clinic, treatment, guideline, prevention, epidemiology for infectious diseases, HIV\u002FAIDS and community health care; to provide, exchange and publish scientific information to the public accurately and promptly.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Vietnam Journal of Infectious Diseases publishes in the whole country; serves the professional work for researchers, clinical staffs, administrators, undergraduate and postgraduate students who are working and studying in the infections, tropical diseases and HIV\u002FAIDS from central to local levels, also organizations and individuals in the world who are interested in infectious and tropical diseases and prevention for HIV\u002FAIDS.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Editor in Chief:\"},{\"attributes\":{\"header\":4},\"insert\":\"\\n\"},{\"insert\":\"Prof. Dr. Nguyen Van Kinh. - Chairman of Editorial Board\"},{\"attributes\":{\"align\":\"justify\",\"blockquote\":true},\"insert\":\"\\n\"},{\"insert\":\"Prof. Dr. Nguyen Van Mui.\"},{\"attributes\":{\"align\":\"justify\",\"blockquote\":true},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Headquarter:\"},{\"attributes\":{\"header\":4},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Address:\"},{\"insert\":\" Level 6, National Hospital for Tropical Diseases, No. 78 Giai Phong Street, Dong Da District, Hanoi city, Vietnam.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Tel:\"},{\"insert\":\" \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Fvjid\u002Fmanagement\u002Fsettings\u002Fcontext\u002Ftel:02435765464\"},\"insert\":\"02435765464\"},{\"insert\":\"; \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Fvjid\u002Fmanagement\u002Fsettings\u002Fcontext\u002Ftel:0913552672\"},\"insert\":\"0913552672\"},{\"insert\":\"; \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Fvjid\u002Fmanagement\u002Fsettings\u002Fcontext\u002Ftel:0913228072\"},\"insert\":\"0913228072\"},{\"insert\":\".\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Email\"},{\"insert\":\": \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Findex\u002Fadmin\u002Fcontexts\u002Fmailto:tungphamvan52@gmail.com\"},\"insert\":\"tungphamvan52@gmail.com\"},{\"insert\":\"; \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Fvjid\u002Fmanagement\u002Fsettings\u002Fcontext\u002Fmailto:tapchitruyennhiem@gmail.com\"},\"insert\":\"tapchitruyennhiem@gmail.com\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Bank account:\"},{\"insert\":\" 0021000275119, Vietcombank Hanoi Branch. Transaction office No. 7, 402 Tran Khat Chan, Hai Ba Trung District, Hanoi city, Vietnam.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"\\n\"}]}","{\"ops\":[{\"insert\":\"Tạp chí Truyền nhiễm Việt Nam là cơ quan ngôn luận của Hội Truyền nhiễm Việt Nam, chịu sự lãnh đạo, chỉ đạo trực tiếp của Thường vụ Ban Chấp hành Hội Truyền nhiễm Việt Nam; sự kiểm tra, giám sát về nghiệp vụ báo chí của các cơ quan chức năng quản lý báo chí thuộc Bộ Thông tin và Truyền thông và Ban Tuyên giáo Trung ương Đảng.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Tạp chí có trách nhiệm giới thiệu các công trình nghiên cứu khoa học, những tiến bộ khoa học trên thế giới và trong nước, góp phần nâng cao kiến thức khoa học cho cán bộ y tế về lâm sàng, điều trị, hướng dẫn, dự phòng, dịch tễ học các bệnh truyền nhiễm, HIV\u002FAIDS và chăm sóc sức khỏe cộng đồng; cung cấp, trao đổi, phổ biến các thông tin khoa học tới công chúng chính xác và kịp thời.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Tạp chí xuất bản 03 tháng\u002F01 kỳ và được phát hành qua Bưu điện và tự phát hành trong phạm vi toàn quốc.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Lãnh đạo Tạp chí: \"},{\"attributes\":{\"header\":4},\"insert\":\"\\n\"},{\"insert\":\"Tổng Biên tập: ThS.BSCKII Nguyễn Trung Cấp\"},{\"attributes\":{\"align\":\"justify\",\"blockquote\":true},\"insert\":\"\\n\"},{\"insert\":\"Phó Tổng Biên tập:\"},{\"attributes\":{\"align\":\"justify\",\"blockquote\":true},\"insert\":\"\\n\"},{\"insert\":\"            TS.BSCKII Phạm Ngọc Thạch\"},{\"attributes\":{\"align\":\"justify\",\"blockquote\":true},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Trụ sở tòa soạn:\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Địa chỉ: Tầng 6, Bệnh viện Bệnh Nhiệt đới Trung ương, 78 đường Giải Phóng, phường Phương Mai, quận Đống Đa, thành phố Hà Nội.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Điện thoại:\"},{\"insert\":\" \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Fvjid\u002Fmanagement\u002Fsettings\u002Fcontext\u002Ftel:02435765464\"},\"insert\":\"02435765464\"},{\"insert\":\" - \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Fvjid\u002Fmanagement\u002Fsettings\u002Fcontext\u002Ftel:0913228072\"},\"insert\":\"0913228072\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Email\"},{\"insert\":\": \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Findex\u002Fadmin\u002Fcontexts\u002Fmailto:tungphamvan52@gmail.com\"},\"insert\":\"tungphamvan52@gmail.com\"},{\"insert\":\"; \"},{\"attributes\":{\"color\":\"#008d45\",\"background\":\"transparent\",\"link\":\"https:\u002F\u002Fbvnd.vojs.vn\u002Findex.php\u002Fvjid\u002Fmanagement\u002Fsettings\u002Fcontext\u002Fmailto:tapchitruyennhiem@gmail.com\"},\"insert\":\"tapchitruyennhiem@gmail.com\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Tài khoản:\"},{\"insert\":\" Số 0021000275119 Ngân hàng Ngoại thương Việt Nam, chi nhánh Hà Nội (Vietcombank Hà Nội). Phòng giao dịch số 7, 402 Trần Khát Chân, quận Hai Bà Trưng, Thành phố Hà Nội.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"\\n\"}]}",{"EN":22,"VI":23},"Vietnam Journal of Infectious Diseases","Tạp chí Truyền nhiễm Việt Nam","PUBLISHER","VERIFIED",null,"Admin update database","PENDING",51,[],[],[],"https:\u002F\u002Ftruyennhiemvietnam.vn\u002Findex.php\u002Fvjid","\u002Fapi\u002Fpublic\u002Ffile\u002Fpublisher\u002F5a09599f-54d1-44c3-8f16-3847ac552024\u002Fadb0e52bf25e0de580fd4289519cb8bf.jpg",{"impactFactor":36,"impactFactorByYear":37,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":41,"totalPublicationByYear":42,"totalCitation":48,"totalCitationByYear":49,"totalCitationPerPublication":54,"totalCitationPerPublicationByYear":55,"hindexLast5Year":59,"hindex":59},0,{"2022":38,"2023":39,"2024":40},0.01,0.03,0.13,315,{"2020":43,"2021":44,"2022":45,"2023":46,"2024":47},63,58,57,65,72,43,{"2020":50,"2021":51,"2022":52,"2023":53},8,15,9,11,0.14,{"2020":40,"2021":56,"2022":57,"2023":58},0.26,0.16,0.17,3,{"id":61,"createTime":62,"updateTime":63,"relativeEntities":64,"slug":65,"properties":66,"entityType":24,"verifyStatus":25,"verifyTime":78,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":79,"subjectFields":80,"manageAffiliations":81,"indexDatabases":136,"url":137,"thumbnailPath":26,"statistic":138,"gsStatistic":155,"type":175,"analyzePriority":26},"25b6bd10-676c-40c0-8dc3-356d1679a284","2023-05-19T02:22:33.430+00:00","2026-06-18T23:33:57.141+00:00",[],"T%E1%BA%A1p-ch%C3%AD-Y-D%C6%B0%E1%BB%A3c-h%E1%BB%8Dc-C%E1%BA%A7n-Th%C6%A1",{"country":67,"issn":68,"introduce":70,"title":73,"gsId":76},{"VOID":15},{"VOID":69},"23541210",{"EN":71,"VI":72},"\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">04\u002F10\u002F2015 Ministry of Information and Communications allowed Can Tho journal of medicine and pharmacy to operate (102 \u002FGP-BTTTT)\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">07\u002F16\u002F2015 Can Tho journal of medicine and pharmacy is internationally recognized: ISSN 2354-1210\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">In 2016, The journal has been included in the list of medical science journals by The State Council for professorship which is awarded a work score of 0-0.5 points for a published article.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Can Tho Journal of Medicine and Pharmacy welcome original works that haven’t been submitted or published in other medical journals. Posts must contain content related to one of the journal’s categories.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">The content published\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">The journal is divided into 3 categories:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">- Scientific research article: are valuable scientific works, which have been researched and accepted.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">- Overview of medicine, biology and pharmacy: serving the objective of continuing training in the fields of medicine, biology and pharmacy; to systematize classical and modern knowledge.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">- Update information on new knowledge about medicine, biology, pharmacy in the country and in the world.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Scope\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">- Publication and introduction of scientific research in the fields:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">+ Medicine (internal medicine, surgery, pediatrics, obstetrics and gynecology, odonto-stomatology, laboratory, oncology, traditional medicine, nursing).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">+ Biology (genetics, biotechnology).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">+ Pharmacology (pharmaceutics, drug quality analysis-control, synthetic pharmaceutical chemistry, biochemistry, pharmacognosy, botany, clinical pharmacy).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">- To enhance the quality of undergraduate, postgraduate education, scientifically researching and meet the necessary treatment in hospital.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">- Introducing the updated domestic and oversea information about science technology to promote scientific research and exchanging technology in local, other universities.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">- Exchanging pharmaceutical and medical information for social health developing in the Mekong Delta and Vietnam.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">The object\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Postgraduate students, student of Can Tho University of Medicine and Pharmacy, scientists from schools, research institutes, hospitals, health centers, pharmaceutical companies of the Mekong Delta; other provinces and regions in Vietnam and other country.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Address\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Headquarters of Can Tho Journal of Medicine and Pharmacy, located Scientific Research and International Cooperation Office: 179 Nguyen Van Cu Street, An Khanh Ward, Ninh Kieu District, Can Tho City, Vietnam.\u003C\u002Fspan>\u003C\u002Fp>","\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Ngày 16\u002F7\u002F2015, Tạp chí Y Dược học Cần Thơ được cấp chỉ số quốc tế: ISSN 2354-1210.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Từ tháng 4\u002F2016, Tạp chí đã được Hội đồng Giáo sư ngành Y đưa vào danh sách các tạp chí khoa học Y học được tính điểm công trình 0-0,5 điểm cho một bài báo đăng.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Năm 2020 Tạp chí Y Dược học Cần Thơ đã được phê duyệt vào danh mục của các Hội đồng Giáo sư ngành Dược học được tính điểm công trình 0-0,5 điểm cho một bài báo đăng.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí Y Dược học Cần Thơ ra 12 số\u002Fnăm, 180-200 trang\u002Fsố.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Từ tháng 12\u002F2022 Tạp chí Y Dược học Cần Thơ là thành viên của hệ thống Crossref và từ tháng 01\u002F2023 tạp chí thực hiện bình duyệt online kín 2 chiều nhằm tăng tính minh bạch, tin cậy của các công trình nghiên cứu khoa học và đảm bảo tốt nhất chất lượng khoa học của bài viết.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tôn chỉ, mục đích và phạm vi của tạp chí\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tôn chỉ và mục đích hoạt động của tạp chí: xuất bản nhằm mục đích phổ biến kết quả từ các đề tài nghiên cứu khoa học; giao lưu trao đổi khoa học, chia sẻ kinh nghiệm, học tập, đồng thời cập nhật thông tin khoa học mới trong các lĩnh vực y, sinh, dược học trong và ngoài nước.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Phạm vi của tạp chí: Tạp chí xuất bản được chia thành 3 chuyên mục: (i) Bài báo nghiên cứu khoa học là kết quả công trình nghiên cứu khoa học có giá trị đã được triển khai nghiên cứu, (ii) Bài tổng quan y, sinh, dược học: phục vụ mục tiêu đào tạo liên tục trong lĩnh vực y, sinh, dược học; nhằm hệ thống hóa những kiến thức kinh điển và hiện đại; (iii) Thông tin cập nhật kiến thức mới về y, sinh, dược học trong nước và trên thế giới.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Chính sách truy cập mở\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí Y Dược học Cần Thơ áp dụng chính sách truy cập mở đối với các bài báo đã xuất bản đến với độc giả, nhằm mở rộng cơ hội tiếp cận các kết quả nghiên cứu chất lượng cao và tăng cường trao đổi kiến thức. Tạp chí đăng tải trực tuyến (miễn phí) toàn văn các bài báo được công bố trên website của Tạp chí (https:\u002F\u002Ftapchi.ctump.edu.vn).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Đạo đức xuất bản\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí Y Dược học Cần Thơ cam kết tuân thủ đạo đức xuất bản phù hợp với các hướng dẫn và tiêu chuẩn của the Committee on Publication Ethics (COPE), tuân thủ các nguyên tắc của COPE’s Core Practices, Best Practices Guidelines for Journal Editors và Guidelines on Good Publication Practices.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Bản thảo bài báo chỉ được chấp nhận khi được tác giả chịu trách nhiệm chính cam kết các nội dung sau: Các nội dung của bản thảo chưa được đăng tải toàn bộ hoặc một phần ở các tạp chí khác; Tất cả các tác giả đều có đóng góp một cách đáng kể vào quá trình nghiên cứu hoặc chuẩn bị bản thảo và cùng chịu trách nhiệm về các nội dung của bản thảo; Tuân thủ các biện pháp đảm bảo đạo đức nghiên cứu (ví dụ thỏa thuận đồng ý tham gia nghiên cứu).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Cam kết bảo mật\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí cam kết thực hiện và tuân thủ các quy định của luật và các văn bản hướng dẫn liên quan đến bảo mật thông tin cá nhân trên không gian mạng. Các thông tin mà người dùng (tác giả, độc giả, biên tập viên, người phản biện) nhập vào các biểu mẫu trên Hệ thống Quản lý xuất bản trực tuyến của tạp chí chỉ được sử dụng vào các mục đích đã được tuyên bố rõ ràng và sẽ không được cung cấp cho bất kỳ bên thứ ba nào khác, hay dùng vào bất kỳ mục đích nào khác.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Phí gửi bài\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Lệ phí gửi đăng bài: 1.000.000đ\u002Fbài báo\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Lệ phí gửi đăng nhanh: 1.500.000đ\u002Fbài báo\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Đối với tác giả là cán bộ viên chức thuộc Trường Đại học Y Dược Cần Thơ thì được hỗ trợ 50% lệ phí gửi đăng bài.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Đối với sinh viên thực hiện đề tài nghiên cứu khoa học cấp trường được hỗ trợ 100% lệ phí đăng bài ( Tác giả gửi đính kèm “ Quyết định về việc giao tổ chức thực hiện đề tài nghiên cứu khoa học cấp Trường của sinh viên”).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Hình thức nộp lệ phí:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">1. Tiền mặt:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Nộp trực tiếp tại Phòng Tài chính - Kế toán, Trường Đại học Y Dược Cần Thơ, số 179 Nguyễn Văn Cừ, P. An Khánh, Q. Ninh Kiều, thành phố Cần Thơ.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">2. Chuyển khoản:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tên Tài khoản: Trường ĐHYD Cần Thơ, Số TK: 0111000115668, tại ngân hàng Vietcombank chi nhánh Cần Thơ.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Thời gian: Áp dụng từ ngày 01\u002F02\u002F2023.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">* Phí gửi bài không được hoàn trả khi bài viết bị từ chối hoặc tác giả xin rút bài viết.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Quy trình phản biện bài báo\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí Y Dược học Cần Thơ thực hiện quy trình phản biện kín hai chiều nghiêm ngặt. Danh tính của những người phản biện không được tiết lộ cho các tác giả và ngược lại. Quy trình thẩm định bài báo đăng gồm các bước sau:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tiếp nhận bản thảo\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tác giả liên hệ gửi bản thảo đến Tạp chí qua hệ thống trực tuyến tại website: https:\u002F\u002Ftapchi.ctump.edu.vn. Hướng dẫn về cách đăng ký, gửi bài và chuẩn bị bản thảo được cung cấp trên website của Tạp chí.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Sàng lọc sơ bộ\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Sau khi Tòa soạn nhận được bài báo của tác giả, Ban Thư ký sẽ tiến hành kiểm tra sơ bộ bài báo (các yêu cầu về nội dung và hình thức). Những bài báo không đúng quy cách hoặc có nội dung không phù hợp hoặc vi phạm bản quyền sẽ bị từ chối (Ban Thư ký thông báo phản hồi đến tác giả trong vòng 1 tuần). Những bài báo đủ điều kiện, được Ban Thư ký tòa soạn chuyển đến Ban Biên tập có cùng chuyên môn với nội dung bài báo để đề xuất người phản biện. Thời gian kể từ khi Ban Biên tập nhận bài báo đến khi đề xuất người phản biện bài báo chậm nhất là 5 ngày.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Vòng phản biện\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">1. Ban Thư ký gửi bài và yêu cầu phản biện đến 02 phản biện độc lập.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">2. Các phản biện gởi nhận xét cho Ban Thư ký. Thời gian từ khi gửi bài cho phản biện đến khi nhận ý kiến của phản biện tối đa là 20 ngày.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Xử ký kết quả phản biện\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">1. Nếu ý kiến đồng ý cho đăng và không cần chỉnh sửa, Ban Thư ký tiếp tục đăng bài theo qui trình.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">2. Nếu ý kiến đồng ý đăng và cần chỉnh sửa, Ban Thư ký sẽ thông tin đến tác giả chỉnh sửa theo yêu cầu của người phản biện. Thời gian chỉnh sửa và gửi lại kéo dài không quá 2 tuần, từ khi tác giả bài báo nhận được thông tin (Quá trình này có thể lặp lại tối đa 2 lần\u002F1 bài báo). Khi có sự thống nhất, đồng ý của người phản biện; bài báo được tiếp tục đăng theo qui trình.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">3. Những bài báo có chất lượng không đạt yêu cầu, cả 2 phản biện không đồng ý cho đăng sẽ bị Tòa soạn từ chối đăng.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Xuất bản\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">1. Ban Thư ký tổng hợp các bản thảo đã được tác giả hoàn thiện sau thẩm định trình Ban Biên tập xem xét, Tổng Biên tập phê duyệt, quyết định bài đăng theo các tiêu chí: sự phù hợp nội dung với tôn chỉ và mục đích, thể loại bài viết (ưu tiên các bài có bài có nghiên cứu chuyên sâu, hàm lượng khoa học cao), đóng góp mới bài báo, bài báo được ưu tiên đăng trong số gần nhất của Tạp chí theo thứ tự: tính thời sự, chất lượng bài báo và thời gian gửi bài.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">2. Ban Biên tập và Ban Thư ký biên tập bản thảo, chế bản, đọc rà soát lỗi. Thời gian hoàn thành từ 10-15 ngày.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">3. Ban Thư ký có trách nhiệm thông báo cho tác giả bài báo (bằng e-mail) về tình hình phê duyệt bài báo, thời gian, số kỳ, tập xuất bản bài báo theo qui định.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">4. Danh sách bài báo theo số Tạp chí được in ấn và phát hành trong năm định kỳ được công bố chính thức trên website: https:\u002F\u002Ftapchi.ctump.edu.vn\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>",{"EN":74,"VI":75},"Cantho Journal of Medicine and Pharmacy","Tạp chí Y Dược học Cần Thơ",{"VOID":77},"wcQ1uqwAAAAJ","2023-05-30T08:17:21.868+00:00",32,[],[82],{"id":83,"createTime":84,"updateTime":85,"relativeEntities":86,"slug":87,"properties":88,"entityType":98,"verifyStatus":25,"verifyTime":99,"verifyNote":26,"syncStatus":28,"languages":100,"translateLanguages":26,"viewCount":103,"url":104,"parentIds":105,"statistic":106},"6413896b-eca9-442b-a73f-182a58a0ce40","2023-06-12T14:59:13.446+00:00","2026-06-19T02:29:32.871+00:00",[],"Tr%C6%B0%E1%BB%9Dng-%C4%90%E1%BA%A1i-h%E1%BB%8Dc-Y-D%C6%B0%E1%BB%A3c-C%E1%BA%A7n-Th%C6%A1",{"country":89,"title":90,"address":93,"abbreviation":96},{"VOID":15},{"EN":91,"VI":92},"Can Tho University of Medicine and Pharmacy","Trường Đại học Y Dược Cần Thơ",{"VI":94,"EN":95},"Số 179, đường Nguyễn Văn Cừ, phường An Khánh, quận Ninh Kiều, thành phố Cần Thơ, Việt Nam","No 179, Nguyen Van Cu street, An Khanh ward, Ninh Kieu district, Can Tho city, Vietnam",{"VOID":97},"ctump","AFFILIATION","2023-08-01T14:07:27.977+00:00",[101,102],"VI","EN",12,"http:\u002F\u002Fwww.ctump.edu.vn\u002F",[],{"impactFactor":36,"impactFactorByYear":107,"i10Index":111,"i10IndexLast5Year":59,"totalPublication":112,"totalPublicationByYear":113,"totalCitation":122,"totalCitationByYear":123,"totalCitationPerPublication":128,"totalCitationPerPublicationByYear":129,"hindexLast5Year":135,"hindex":135},{"2022":108,"2023":109,"2024":110,"2025":38},0.1,0.05,0.07,4,1489,{"2013":114,"2014":115,"2015":115,"2016":111,"2017":115,"2018":59,"2019":114,"2020":116,"2021":117,"2022":118,"2023":119,"2024":120,"2025":121,"2026":111},2,1,10,84,281,680,260,156,313,{"2013":59,"2014":114,"2018":124,"2021":125,"2022":126,"2023":127},17,36,123,132,0.21,{"2013":130,"2014":114,"2018":131,"2021":132,"2022":133,"2023":134},1.5,5.67,0.43,0.44,0.19,6,[],"https:\u002F\u002Ftapchi.ctump.edu.vn\u002Findex.php\u002Fctump",{"impactFactor":36,"impactFactorByYear":139,"i10Index":114,"i10IndexLast5Year":114,"totalPublication":140,"totalPublicationByYear":141,"totalCitation":147,"totalCitationByYear":148,"totalCitationPerPublication":151,"totalCitationPerPublicationByYear":152,"hindexLast5Year":135,"hindex":135},{"2022":38,"2023":36,"2024":39,"2025":38},1956,{"0":114,"2019":114,"2020":50,"2021":142,"2022":143,"2023":144,"2024":145,"2025":146},76,403,789,305,371,524,{"0":114,"2019":135,"2021":124,"2022":149,"2023":150,"2024":111,"2025":114},287,206,0.27,{"0":115,"2019":59,"2021":153,"2022":154,"2023":56,"2024":38,"2025":38},0.22,0.71,{"impactFactor":26,"impactFactorByYear":26,"i10Index":114,"i10IndexLast5Year":114,"totalPublication":156,"totalPublicationByYear":157,"totalCitation":163,"totalCitationByYear":164,"totalCitationPerPublication":169,"totalCitationPerPublicationByYear":170,"hindexLast5Year":135,"hindex":135},461,{"0":158,"2019":114,"2021":159,"2022":160,"2023":161,"2024":158,"2025":162},7,37,296,107,5,419,{"2021":59,"2022":59,"2023":165,"2024":166,"2025":167,"2026":168},71,126,171,41,0.91,{"2021":171,"2022":38,"2023":172,"2024":173,"2025":174},0.08,0.66,18,34.2,"JOURNAL",{"id":177,"createTime":178,"updateTime":179,"relativeEntities":180,"slug":181,"properties":182,"entityType":24,"verifyStatus":25,"verifyTime":193,"verifyNote":26,"syncStatus":28,"languages":194,"translateLanguages":26,"viewCount":36,"subjectFields":195,"manageAffiliations":196,"indexDatabases":197,"url":198,"thumbnailPath":26,"statistic":26,"gsStatistic":199,"type":175,"analyzePriority":26},"f8d0bf97-8d89-482e-b58c-2fc481a0b79b","2025-10-27T06:27:08.591+00:00","2026-06-18T23:33:41.667+00:00",[],"T%E1%BA%A1p-ch%C3%AD-Khoa-h%E1%BB%8Dc-v%C3%A0-C%C3%B4ng-ngh%E1%BB%87-nhi%E1%BB%87t-%C4%91%E1%BB%9Bi",{"country":183,"introduce":184,"gsId":186,"title":188,"issn":191},{"VOID":15},{"EN":185},"\u003Cp style=\"text-align:justify;\">     Journal of Tropical Science and Engineering (JTSE) is a multidisciplinary scientific journal, licensed to operate as a print journal in 2012 and an electronic journal in 2024 (License No.1479\u002FGP-BTTTT dated August 20, 2012 and No.91\u002FGP-BTTTT dated April 9, 2024 issued by the Ministry of Information and Communications of Vietnam). The JTSE is headquartered in Hanoi.\u003C\u002Fp>\u003Cp style=\"text-align:justify;\">        The JTSE is published every 3 months (4 issues\u002Fyear), publishing research results and overview articles in 3 groups of fields: Tropical Ecology and Environment; Chemistry and Material Sciences; Biomedicine and Pharmacy. In 2022, the JTSE registered the international identifier Digital Object Identifier (DOI): 10.58334\u002Fvrtc.jtst and assigned DOI codes to all articles of the journal. The members of the Editorial Board of the JTSE are prestigious scientists and leading scientists from Vietnam and many countries in the world. The JTSE has been recognized by the Vietnam State Council for Professorship to score scientific articles in Chemistry, Medicine and Biology with scores ranging from 0-0.75 points.\u003C\u002Fp>\u003Cp style=\"text-align:justify;\">      Currently, the JTSE is building and perfecting a set of criteria and making efforts to join the List of prestigious  international journals with a roadmap to enter Scopus and SCIE in the coming time.\u003C\u002Fp>",{"VOID":187},"MS2_GJQAAAAJ",{"VI":189,"EN":190},"Tạp chí Khoa học và Công nghệ nhiệt đới","Journal of Tropical Science and Engineering",{"VOID":192},"08667535","2025-10-27T06:27:25.058+00:00",[101,102],[],[],[],"https:\u002F\u002Ftapchikhcnnd.com.vn",{"impactFactor":26,"impactFactorByYear":26,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":200,"totalPublicationByYear":201,"totalCitation":161,"totalCitationByYear":203,"totalCitationPerPublication":153,"totalCitationPerPublicationByYear":205,"hindexLast5Year":114,"hindex":114},481,{"0":115,"2020":115,"2021":115,"2022":114,"2024":115,"2025":202,"2026":115},474,{"2017":114,"2018":115,"2019":111,"2020":162,"2021":162,"2022":116,"2023":50,"2024":162,"2025":204,"2026":52},52,{"2020":162,"2021":162,"2022":162,"2024":162,"2025":206,"2026":52},0.11,{"id":208,"createTime":209,"updateTime":210,"relativeEntities":211,"slug":212,"properties":213,"entityType":24,"verifyStatus":25,"verifyTime":221,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":222,"subjectFields":223,"manageAffiliations":224,"indexDatabases":225,"url":226,"thumbnailPath":26,"statistic":227,"gsStatistic":276,"type":175,"analyzePriority":26},"a3d1e82a-57e2-40f9-940e-f5fa8b9ef64a","2023-06-01T07:11:26.039+00:00","2026-06-18T23:33:28.573+00:00",[],"VNU-Journal-of-Science-Earth-and-Environmental-Sciences",{"issn":214,"title":216,"country":218,"gsId":219},{"VOID":215},"26159279",{"EN":217},"VNU Journal of Science: Earth and Environmental Sciences",{"VOID":15},{"VOID":220},"UmXD8vEAAAAJ","2023-06-01T07:17:59.210+00:00",27,[],[],[],"https:\u002F\u002Fjs.vnu.edu.vn\u002FEES",{"impactFactor":36,"impactFactorByYear":228,"i10Index":234,"i10IndexLast5Year":36,"totalPublication":235,"totalPublicationByYear":236,"totalCitation":246,"totalCitationByYear":247,"totalCitationPerPublication":261,"totalCitationPerPublicationByYear":262,"hindexLast5Year":103,"hindex":103},{"2010":229,"2012":40,"2013":230,"2014":230,"2015":231,"2016":54,"2017":171,"2018":109,"2019":110,"2020":57,"2021":232,"2022":233,"2023":151,"2024":58},0.02,0.04,0.09,0.31,0.4,19,656,{"2008":237,"2009":238,"2010":239,"2011":238,"2012":240,"2013":241,"2014":239,"2015":242,"2016":243,"2017":244,"2018":245,"2019":165,"2020":125,"2021":168,"2022":125,"2023":222,"2024":111},23,24,22,28,25,20,146,29,78,1038,{"2008":248,"2009":249,"2010":250,"2011":251,"2012":252,"2013":253,"2014":254,"2015":255,"2016":256,"2017":257,"2018":161,"2019":258,"2020":259,"2021":29,"2022":260},119,64,66,86,38,73,59,31,129,39,97,53,26,1.58,{"2008":263,"2009":264,"2010":59,"2011":265,"2012":266,"2013":267,"2014":268,"2015":269,"2016":270,"2017":271,"2018":272,"2019":272,"2020":273,"2021":274,"2022":275},5.17,2.67,3.58,1.36,2.92,2.68,1.55,0.88,1.34,1.37,1.47,1.24,0.72,{"impactFactor":26,"impactFactorByYear":26,"i10Index":173,"i10IndexLast5Year":135,"totalPublication":277,"totalPublicationByYear":278,"totalCitation":279,"totalCitationByYear":280,"totalCitationPerPublication":288,"totalCitationPerPublicationByYear":289,"hindexLast5Year":158,"hindex":298},113,{"2007":114,"2008":103,"2009":173,"2010":116,"2011":51,"2012":239,"2013":103,"2014":162,"2015":53,"2016":135},616,{"2009":162,"2010":114,"2011":52,"2012":124,"2013":222,"2014":255,"2015":48,"2016":44,"2017":281,"2018":282,"2019":259,"2020":283,"2021":284,"2022":285,"2023":286,"2024":257,"2025":287,"2026":59},54,60,49,47,34,44,33,5.45,{"2009":290,"2010":291,"2011":292,"2012":293,"2013":294,"2014":295,"2015":296,"2016":297},0.28,0.2,0.6,0.77,2.25,6.2,3.91,9.67,14,{"id":300,"createTime":301,"updateTime":302,"relativeEntities":303,"slug":304,"properties":305,"entityType":24,"verifyStatus":25,"verifyTime":316,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":234,"subjectFields":317,"manageAffiliations":318,"indexDatabases":388,"url":389,"thumbnailPath":390,"statistic":391,"gsStatistic":409,"type":175,"analyzePriority":26},"a7166325-6c9e-4db3-8a59-7c879701a372","2023-07-31T04:28:49.231+00:00","2026-06-18T23:33:22.428+00:00",[],"VNU-Journal-of-Science-Policy-and-Management-Studies",{"country":306,"issn":307,"eissn":309,"title":311,"gsId":314},{"VOID":15},{"VOID":308},"26159295",{"VOID":310},"25881116",{"EN":312,"VI":313},"VNU Journal of Science: Policy and Management Studies","Tạp chí Nghiên cứu Chính sách và Quản lý",{"VOID":315},"xKW2E_cAAAAJ","2023-08-01T03:23:46.688+00:00",[],[319],{"id":320,"createTime":321,"updateTime":322,"relativeEntities":323,"slug":324,"properties":325,"entityType":98,"verifyStatus":25,"verifyTime":335,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":336,"url":337,"parentIds":338,"statistic":339},"12466116-8f60-4b01-8faf-2411483a0977","2023-05-30T09:37:38.472+00:00","2026-06-19T02:14:28.352+00:00",[],"Vietnam-National-University",{"country":326,"title":327,"abbreviation":330,"address":332},{"VOID":15},{"EN":328,"VI":329},"Vietnam National University, Hanoi","Đại học Quốc gia Hà Nội",{"VOID":331},"VNU",{"VI":333,"EN":334},"Số 144 Xuân Thủy, Phường Dịch Vọng Hậu, Quận Cầu Giấy, Hà Nội, Việt Nam","No. 144 Xuan Thuy Street, Dich Vong Hau Ward, Cau Giay District, Hanoi, Vietnam","2023-08-02T13:58:17.029+00:00",16,"http:\u002F\u002Fwww.vnu.edu.vn\u002F",[],{"impactFactor":36,"impactFactorByYear":340,"i10Index":285,"i10IndexLast5Year":162,"totalPublication":344,"totalPublicationByYear":345,"totalCitation":354,"totalCitationByYear":355,"totalCitationPerPublication":368,"totalCitationPerPublicationByYear":369,"hindexLast5Year":336,"hindex":336},{"2014":109,"2015":231,"2016":231,"2017":206,"2018":341,"2019":110,"2020":342,"2021":343,"2022":171,"2023":231,"2024":110,"2025":39},0.06,0.18,0.35,1247,{"2003":115,"2004":115,"2005":114,"2006":59,"2007":111,"2008":162,"2009":59,"2010":50,"2011":124,"2012":336,"2013":260,"2014":244,"2015":250,"2016":281,"2017":346,"2018":347,"2019":348,"2020":349,"2021":350,"2022":351,"2023":352,"2024":353,"2025":255,"2026":50},94,88,83,67,176,185,187,93,1644,{"2004":111,"2005":115,"2006":52,"2007":298,"2008":356,"2009":298,"2010":286,"2011":357,"2012":244,"2013":358,"2014":359,"2015":360,"2016":361,"2017":362,"2018":363,"2019":364,"2020":365,"2021":366,"2022":367,"2023":367,"2024":162},13,81,48,70,151,115,109,259,174,181,121,101,1.32,{"2004":111,"2005":370,"2006":59,"2007":371,"2008":372,"2009":373,"2010":374,"2011":375,"2012":376,"2013":377,"2014":378,"2015":379,"2016":380,"2017":381,"2018":382,"2019":383,"2020":384,"2021":385,"2022":386,"2023":387,"2024":109},0.5,3.5,2.6,4.67,5.5,4.76,1.81,1.85,2.41,2.29,2.13,1.16,2.94,2.1,2.7,0.69,0.55,0.54,[],"https:\u002F\u002Fjs.vnu.edu.vn\u002FPaM","\u002Fapi\u002Fpublic\u002Ffile\u002Fpublisher\u002Fa7166325-6c9e-4db3-8a59-7c879701a372\u002Fecfe83f4bcc60c7023ae04d8900fe0ac.jpg",{"impactFactor":36,"impactFactorByYear":392,"i10Index":111,"i10IndexLast5Year":36,"totalPublication":394,"totalPublicationByYear":395,"totalCitation":399,"totalCitationByYear":400,"totalCitationPerPublication":293,"totalCitationPerPublicationByYear":403,"hindexLast5Year":158,"hindex":158},{"2018":109,"2019":171,"2020":393,"2021":108,"2022":54,"2023":206,"2024":54},0.23,320,{"2015":50,"2016":239,"2017":286,"2018":396,"2019":397,"2020":159,"2021":398,"2022":168,"2023":79,"2024":255},30,35,40,247,{"2015":115,"2016":242,"2017":401,"2018":222,"2019":402,"2020":79,"2021":239,"2022":50,"2023":116},77,50,{"2015":404,"2016":169,"2017":405,"2018":406,"2019":407,"2020":408,"2021":386,"2022":291,"2023":232},0.12,1.75,0.9,1.43,0.86,{"impactFactor":26,"impactFactorByYear":26,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":103,"totalPublicationByYear":410,"totalCitation":234,"totalCitationByYear":411,"totalCitationPerPublication":261,"totalCitationPerPublicationByYear":412,"hindexLast5Year":114,"hindex":59},{"2015":114,"2016":116},{"2016":115,"2017":114,"2018":114,"2019":59,"2020":114,"2021":59,"2022":114,"2023":114,"2024":115,"2026":115},{"2016":108},{"id":414,"createTime":415,"updateTime":416,"relativeEntities":417,"slug":418,"properties":419,"entityType":24,"verifyStatus":25,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":238,"subjectFields":428,"manageAffiliations":429,"indexDatabases":430,"url":431,"thumbnailPath":26,"statistic":432,"gsStatistic":438,"type":175,"analyzePriority":26},"16e65a3f-d274-47dd-8691-56d76eb58c3d","2023-05-30T09:10:06.062+00:00","2026-06-18T23:33:17.679+00:00",[],"Vietnam-Journal-of-Otorhinolaryngology-Head-and-Neck-Surgery",{"country":420,"issn":421,"title":423,"gsId":426},{"VOID":15},{"VOID":422},"18593704",{"EN":424,"VI":425},"Vietnam Journal of Otorhinolaryngology - Head and Neck Surgery","Tạp chí Tai Mũi Họng Việt Nam",{"VOID":427},"L78B_eIAAAAJ",[],[],[],"https:\u002F\u002Ftapchitaimuihong.vn\u002Findex.php\u002Ftmh",{"impactFactor":36,"impactFactorByYear":433,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":434,"totalPublicationByYear":435,"totalCitation":111,"totalCitationByYear":436,"totalCitationPerPublication":230,"totalCitationPerPublicationByYear":437,"hindexLast5Year":115,"hindex":115},{"2024":229},95,{"2022":52,"2023":286,"2024":255,"2025":53},{"2023":111},{"2023":231},{"impactFactor":26,"impactFactorByYear":26,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":240,"totalPublicationByYear":439,"totalCitation":234,"totalCitationByYear":440,"totalCitationPerPublication":441,"totalCitationPerPublicationByYear":442,"hindexLast5Year":114,"hindex":114},{"2023":53,"2024":116,"2025":135,"2026":115},{"2024":59,"2025":298,"2026":114},0.68,{"2024":443,"2025":444,"2026":114},0.3,2.33,{"id":446,"createTime":447,"updateTime":448,"relativeEntities":449,"slug":450,"properties":451,"entityType":24,"verifyStatus":25,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":396,"subjectFields":460,"manageAffiliations":461,"indexDatabases":462,"url":463,"thumbnailPath":464,"statistic":465,"gsStatistic":472,"type":175,"analyzePriority":26},"25988add-c322-4eda-afda-63b1559bb824","2023-04-07T03:49:55.817+00:00","2026-06-18T23:32:23.776+00:00",[],"T%E1%BA%A1p%20ch%C3%AD%20Y%20-%20D%C6%B0%E1%BB%A3c%20h%E1%BB%8Dc%20qu%C3%A2n%20s%E1%BB%B1",{"country":452,"issn":453,"title":455,"gsId":458},{"VOID":15},{"VOID":454},"18590748",{"EN":456,"VI":457},"Journal of Military Pharmaco-medicine","Tạp chí Y - Dược học quân sự",{"VOID":459},"_pmQ8IEAAAAJ",[],[],[],"https:\u002F\u002Fjmpm.vn\u002Findex.php\u002Fjmpm","\u002Fapi\u002Fpublic\u002Ffile\u002Fpublisher\u002F25988add-c322-4eda-afda-63b1559bb824\u002F09c6bc42157cf5ece95edc971ccddb52.jpg",{"impactFactor":36,"impactFactorByYear":466,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":467,"totalPublicationByYear":468,"totalCitation":135,"totalCitationByYear":470,"totalCitationPerPublication":38,"totalCitationPerPublicationByYear":471,"hindexLast5Year":115,"hindex":115},{"2023":229,"2024":38},475,{"2022":168,"2023":365,"2024":469,"2025":124},236,{"2022":114,"2023":111},{"2022":109,"2023":229},{"impactFactor":26,"impactFactorByYear":26,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":277,"totalPublicationByYear":473,"totalCitation":401,"totalCitationByYear":474,"totalCitationPerPublication":441,"totalCitationPerPublicationByYear":475,"hindexLast5Year":59,"hindex":59},{"2015":115,"2018":114,"2019":115,"2020":115,"2021":59,"2022":103,"2023":159,"2024":287,"2025":237},{"2020":115,"2021":115,"2022":115,"2023":52,"2024":237,"2025":79,"2026":116},{"2020":115,"2021":476,"2022":171,"2023":477,"2024":478,"2025":479},0.33,0.24,0.7,1.39,{"id":481,"createTime":482,"updateTime":483,"relativeEntities":484,"slug":485,"properties":486,"entityType":24,"verifyStatus":25,"verifyTime":26,"verifyNote":27,"syncStatus":28,"languages":496,"translateLanguages":26,"viewCount":45,"subjectFields":497,"manageAffiliations":498,"indexDatabases":525,"url":526,"thumbnailPath":527,"statistic":528,"gsStatistic":26,"type":26,"analyzePriority":26},"2b8d7b12-2d20-4777-be98-077f44f03c69","2023-09-07T07:40:58.286+00:00","2025-07-13T21:21:00.542+00:00",[],"VNU-Journal-of-Social-Sciences-and-Humanities",{"country":487,"issn":488,"introduce":490,"title":493},{"VOID":15},{"VOID":489},"23541172",{"EN":491,"VI":492},"{\"ops\":[{\"insert\":\"VNU Journal of Social Sciences and Humanities (ISSN 2354-1172) is a double-blind peer-reviewed journal published by University of Social Sciences and Humanities, Vietnam National University, Hanoi, Vietnam, under the publication permit no. 155\u002FGP-BTTTT, issued on 11\"},{\"attributes\":{\"script\":\"super\"},\"insert\":\"th \"},{\"insert\":\"May, 2015 by Ministry of Information and Communications. The journal publishes four Vietnamese issues and two English issues per year.\\nCurrently, there are 35 reputable professors in the editorial board. The main objectives of the journal include: providing an intellectual platform for Vietnamese and international scholars; promoting interdisciplinary studies in social sciences and humanities; becoming the leading journal in social sciences and humanities in Vietnam; being indexed by worldwide databases and having academic recognition internationally in the near future.\\nThe journal is currently indexed by Google Scholar, WorldCat, Open Archives, Cosmos Impact Factor, Advanced Sciences Index, Scientific Indexing Services, CrossRef, EBSCO Information Services and Vietnam National University’s digital archive.\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Journal of Social Sciences and Humanities-Vietnam\"},{\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"ISSN 2354-1172, email: tapchikhxhnv@gmail.com, tckhxhnv@vnu.edu.vn\"},{\"insert\":\"\\n\"}]}","{\"ops\":[{\"insert\":\"Được thành lập ngày 31\u002F8\u002F2015 (giấy phép hoạt động số 155\u002FGP-BVHTT ngày 11 tháng 5 năm 2015 của Bộ Thông tin và Truyền thông, mã số tiêu chuẩn quốc tế ISSN 2354-1172), Tạp chí Khoa học Xã hội và Nhân văn (Journal of Social Sciences and Humanities) là ấn phẩm khoa học chính thức, duy nhất của Trường Đại học Khoa học Xã hội và Nhân văn, ĐHQG Hà Nội, phát triển và kế thừa Chuyên san Khoa học Xã hội và Nhân văn, Tạp chí Khoa học, ĐHQG Hà Nội.\\nTạp chí xuất bản định kỳ (04 số tiếng Việt\u002Fnăm và 02 số tiếng Anh\u002Fnăm), có nhiệm vụ \"},{\"attributes\":{\"italic\":true},\"insert\":\"công bố, giới thiệu các công trình nghiên cứu khoa học khoa học xã hội và nhân văn của các tác giả là các nhà khoa học trong và ngoài nước, phục vụ giảng dạy, học tập và nghiên cứu khoa học\"},{\"insert\":\". Hội đồng biên tập của Tạp chí hiện bao gồm 33 nhà khoa học có uy tín trong nước và quốc tế. Tạp chí tập trung và ưu tiên đăng tải những bài báo theo định hướng của tinh thần cởi mở, sáng tạo, nhanh chóng vươn lên để tiếp cận và sánh ngang với các tạp chí có uy tín hàng đầu của khu vực và trên thế giới. Nội dung chính của Tạp chí bao gồm các Bài nghiên cứu (khoảng 6000 đến 15000 từ), các bài điểm sách, thông tin khoa học (khoảng 300 đến 1500 từ) được trình bày theo đúng cấu trúc và chuẩn mực của một tạp chí khoa học.\\nCác bài viết của Tạp chí hiện đang được trích dẫn bởi Google Scholar, WorldCat, Open Archives, Cosmos Impact Factor, Advanced Sciences Index, Scientific Indexing Services, CrossRef, EBSCO Information Services.\\nMọi thông tin xin liên hệ: \"},{\"attributes\":{\"italic\":true},\"insert\":\"Phòng Tạp chí, 701 - E, Trường Đại học Khoa học Xã hội và Nhân văn, 336 Nguyễn Trãi, Thanh Xuân, Hà Nội. ĐT: 024.35581984; email: tckhxhnv@vnu.edu.vn \"},{\"insert\":\"hoặc \"},{\"attributes\":{\"italic\":true},\"insert\":\"tapchikhxhnv@gmail.com \"},{\"insert\":\"\\n\"}]}",{"EN":494,"VI":495},"VNU Journal of Social Sciences and Humanities","Tạp chí Khoa học Xã hội và Nhân văn",[101,102],[],[499],{"id":500,"createTime":501,"updateTime":502,"relativeEntities":503,"slug":504,"properties":505,"entityType":98,"verifyStatus":25,"verifyTime":509,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":222,"url":26,"parentIds":510,"statistic":511},"8b6e349b-0daf-4895-9c3f-85f30f1bfd42","2023-07-31T12:55:58.430+00:00","2026-06-19T02:30:07.899+00:00",[],"Tr%C6%B0%E1%BB%9Dng-%C4%90%E1%BA%A1i-h%E1%BB%8Dc-Khoa-h%E1%BB%8Dc-X%C3%A3-h%E1%BB%99i-v%C3%A0-Nh%C3%A2n-v%C4%83n-%C4%90%E1%BA%A1i-h%E1%BB%8Dc-Qu%E1%BB%91c-gia-H%C3%A0-N%E1%BB%99i",{"title":506},{"EN":507,"VI":508},"VNU University of Social Sciences and Humanities","Trường Đại học Khoa học Xã hội và Nhân văn, Đại học Quốc gia Hà Nội","2023-08-02T15:28:49.057+00:00",[],{"impactFactor":36,"impactFactorByYear":512,"i10Index":59,"i10IndexLast5Year":115,"totalPublication":514,"totalPublicationByYear":515,"totalCitation":518,"totalCitationByYear":519,"totalCitationPerPublication":520,"totalCitationPerPublicationByYear":521,"hindexLast5Year":162,"hindex":162},{"2016":229,"2017":230,"2018":229,"2021":230,"2022":58,"2023":513,"2024":38},0.15,365,{"2013":115,"2014":158,"2015":125,"2016":252,"2017":44,"2018":516,"2019":286,"2020":396,"2021":259,"2022":517,"2023":396,"2024":115,"2025":59,"2026":115},21,42,169,{"2015":283,"2016":135,"2017":52,"2018":50,"2019":298,"2020":53,"2021":359,"2022":115,"2023":115},0.46,{"2015":266,"2016":57,"2017":57,"2018":522,"2019":523,"2020":524,"2021":368,"2022":229,"2023":39},0.38,0.32,0.37,[],"http:\u002F\u002Fjournal.ussh.vnu.edu.vn\u002Findex.php\u002Fvjossh","\u002Fapi\u002Fpublic\u002Ffile\u002Fpublisher\u002F2b8d7b12-2d20-4777-be98-077f44f03c69\u002F0bd0751202944a4b4165b482e6e623e4.png",{"impactFactor":36,"impactFactorByYear":529,"i10Index":162,"i10IndexLast5Year":115,"totalPublication":530,"totalPublicationByYear":531,"totalCitation":537,"totalCitationByYear":538,"totalCitationPerPublication":343,"totalCitationPerPublicationByYear":540,"hindexLast5Year":135,"hindex":135},{"2016":341,"2017":39,"2018":229,"2019":38,"2020":110,"2021":231,"2022":231,"2023":341,"2024":39},764,{"2015":255,"2016":245,"2017":532,"2018":259,"2019":533,"2020":534,"2021":535,"2022":536,"2023":534,"2024":254,"2025":50},111,106,68,92,89,265,{"2015":539,"2016":241,"2017":168,"2018":51,"2019":349,"2020":260,"2021":244,"2022":298,"2023":114},46,{"2015":541,"2016":523,"2017":524,"2018":290,"2019":542,"2020":522,"2021":523,"2022":57,"2023":39},1.48,0.63,{"id":544,"createTime":545,"updateTime":546,"relativeEntities":547,"slug":548,"properties":549,"entityType":24,"verifyStatus":25,"verifyTime":26,"verifyNote":558,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":50,"subjectFields":559,"manageAffiliations":560,"indexDatabases":561,"url":562,"thumbnailPath":563,"statistic":564,"gsStatistic":26,"type":26,"analyzePriority":26},"6ec01bd0-15c0-469a-86ac-41339076ae0a","2023-08-10T07:08:33.153+00:00","2026-01-31T21:19:06.362+00:00",[],"T%E1%BA%A1p-ch%C3%AD-Da-li%E1%BB%85u-h%E1%BB%8Dc-Vi%E1%BB%87t-Nam",{"country":550,"issn":551,"introduce":553,"title":555},{"VOID":15},{"VOID":552},"18594824",{"VI":554},"{\"ops\":[{\"insert\":\"Tạp chí “Da liễu học Việt Nam” (Tiếng Anh: Vietnamese Journal of Dermatology and Venereology) thuộc Hội Da liễu Việt Nam, xuất bản 4 số mỗi năm bằng tiếng Việt hoặc tiếng Anh.\\nTạp chí Da liễu học Việt Nam hoạt động với mục đích, tôn chỉ là phổ biến, trao đổi thông tin trong lĩnh vực chuyên ngành da liễu; đăng tải các công trình nghiên cứu khoa học; chuyển giao công nghệ - kinh tế và khoa học kỹ thuật liên quan đến lĩnh vực da liễu.\\nPhạm vi của tạp chí là tất cả các bài báo khoa học, bài tổng quan, giới thiệu ca lâm sàng, … có liên quan tới chuyên ngành da liễu trong và ngoài nước. Tạp chí công bố các công trình nghiên cứu liên quan đến mô hình bệnh tật, các phương pháp chẩn đoán, điều trị, dự phòng và phục hồi chức năng các bệnh thuộc chuyên ngành da liễu. Ngoài ra, tạp chí còn đăng tải các bài tổng quan, cập nhật thông tin, kiến thức, hướng dẫn chẩn đoán, điều trị trong chuyên ngành da liễu trong nước và quốc tế; đăng tải các bài ca lâm sàng đặc biệt trong chuyên ngành da liễu.\\nTạp chí Da liễu học Việt Nam được biết tới là một tạp chí chuyên ngành có uy tín trong lĩnh vực da liễu. Các bài báo về nghiên cứu khoa học đăng trong Tạp chí được bình duyệt một cách nghiêm ngặt bởi ít nhất 2 chuyên gia. Hội đồng biên tập tạp chí bao gồm các nhà khoa học có uy tín (Giáo sư, Phó Giáo sư, Tiến sĩ, Bác sĩ…) trong chuyên ngành da liễu nhằm đảm bảo chất lượng và tính khách quan, khoa học cho các bài viết đăng trên Tạp chí.\\n\"}]}",{"EN":556,"VI":557},"Vietnamese Journal of Dermatology and Venereology","Tạp chí Da liễu học Việt Nam","Admin Import",[],[],[],"https:\u002F\u002Fvjdv.vn\u002Findex.php\u002Fvjdv","\u002Fapi\u002Fpublic\u002Ffile\u002Fpublisher\u002F6ec01bd0-15c0-469a-86ac-41339076ae0a\u002F3cbc81720e58429dc7b1c4d7ab1935ca.jpg",{"impactFactor":36,"impactFactorByYear":565,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":566,"totalPublicationByYear":567,"totalCitation":116,"totalCitationByYear":570,"totalCitationPerPublication":109,"totalCitationPerPublicationByYear":571,"hindexLast5Year":115,"hindex":115},{"2023":38,"2024":230},182,{"2022":568,"2023":45,"2024":569},69,56,{"2022":52,"2023":115},{"2022":40,"2023":229},{"id":573,"createTime":574,"updateTime":575,"relativeEntities":576,"slug":577,"properties":578,"entityType":24,"verifyStatus":25,"verifyTime":26,"verifyNote":27,"syncStatus":28,"languages":587,"translateLanguages":26,"viewCount":283,"subjectFields":588,"manageAffiliations":589,"indexDatabases":647,"url":648,"thumbnailPath":649,"statistic":650,"gsStatistic":26,"type":26,"analyzePriority":26},"19221551-7519-47ff-a892-331d1139c64b","2023-09-12T07:03:05.744+00:00","2026-01-24T20:54:40.144+00:00",[],"T%E1%BA%A1p-ch%C3%AD-Khoa-h%E1%BB%8Dc-S%E1%BB%A9c-kho%E1%BA%BB-%C4%90%E1%BA%A1i-h%E1%BB%8Dc-Qu%E1%BB%91c-gia-Th%C3%A0nh-ph%E1%BB%91-H%E1%BB%93-Ch%C3%AD-Minh",{"country":579,"issn":580,"introduce":582,"title":584},{"VOID":15},{"VOID":581},"27349446",{"EN":583},"{\"ops\":[{\"attributes\":{\"bold\":true},\"insert\":\"1. History\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Science and Technology Development Journal\"},{\"insert\":\" (STDJ) (ISSN 2734-9446), Vietnam National University - Ho Chi Minh City (VNU-HCM) was established in 1997. And the first issue was published in January 1998 with ISSN 1859-0128. Since then, STDJ has become the most important scientific forum of scientists from VNU-HCM as well as other universities. The magazine has undergone 20 years of development and has become a bridge for scientific exchanges, as well as enriching reference materials for the faculty, doctoral students, students of VNU-HCM in particular and other universities, institutes...\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Science and Technology Development Journal - Health Sciences (STDJ-HS) is a subjournal of Science and Technology Development Journal since 2020.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\" \"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"2. Focus and Scope\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Publishing articles with contents on healthcare, research projects in the field of health, advanced directions in health education and management. Therefore, STDJ-HS will accept articles from doctors, administrators, teachers, researchers, graduate students and fellows. The authors will be responsible for the accuracy of the data, opinions, opinions and material cited in the article.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Facilitating the exchange of scientific and technological information and act as a bridge between theory and practice in the community of educators, scientists, managers, policy makers and enterprises in and out of the country.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"\\n\"}]}",{"EN":585,"VI":586},"VNUHCM JOURNAL OF HEALTH SCIENCES","Tạp chí Khoa học Sức khoẻ Đại học Quốc gia Thành phố Hồ Chí Minh",[101,102],[],[590],{"id":591,"createTime":592,"updateTime":593,"relativeEntities":594,"slug":595,"properties":596,"entityType":98,"verifyStatus":25,"verifyTime":606,"verifyNote":26,"syncStatus":28,"languages":607,"translateLanguages":26,"viewCount":608,"url":609,"parentIds":610,"statistic":611},"fc4c2560-868c-4677-acb1-8686bef88727","2023-06-26T04:48:23.774+00:00","2026-06-19T01:46:17.248+00:00",[],"%C4%90%E1%BA%A1i-h%E1%BB%8Dc-Qu%E1%BB%91c-gia-Th%C3%A0nh-ph%E1%BB%91-H%E1%BB%93-Ch%C3%AD-Minh",{"country":597,"title":598,"abbreviation":601,"address":603},{"VOID":15},{"EN":599,"VI":600},"Vietnam National University Ho Chi Minh City","Đại học Quốc gia Thành phố Hồ Chí Minh",{"VOID":602},"VNUHCM",{"VI":604,"EN":605},"khu phố 6, Phường Linh Trung, Thành phố Thủ Đức, Thành phố Hồ Chí Minh, Việt Nam","Quarter 6, Linh Trung Ward, Thu Duc City, Ho Chi Minh City, Vietnam","2023-08-16T14:13:07.134+00:00",[101,102],45,"https:\u002F\u002Fvnuhcm.edu.vn\u002F",[],{"impactFactor":36,"impactFactorByYear":612,"i10Index":285,"i10IndexLast5Year":51,"totalPublication":613,"totalPublicationByYear":614,"totalCitation":624,"totalCitationByYear":625,"totalCitationPerPublication":634,"totalCitationPerPublicationByYear":635,"hindexLast5Year":124,"hindex":124},{"2014":36,"2015":38,"2016":109,"2017":39,"2018":229,"2019":38,"2020":110,"2021":171,"2022":110,"2023":110,"2024":171,"2025":229},3708,{"2005":115,"2006":115,"2007":115,"2008":135,"2009":111,"2010":53,"2011":52,"2012":568,"2013":615,"2014":351,"2015":616,"2016":469,"2017":617,"2018":127,"2019":618,"2020":619,"2021":620,"2022":621,"2023":622,"2024":623,"2025":159,"2026":50},164,266,177,226,603,931,314,246,74,2399,{"2006":115,"2008":50,"2010":162,"2011":242,"2012":222,"2013":43,"2014":626,"2015":627,"2016":628,"2017":629,"2018":258,"2019":630,"2020":631,"2021":632,"2022":633,"2023":353,"2024":115},250,124,157,162,152,385,559,128,0.65,{"2006":115,"2008":636,"2010":637,"2011":638,"2012":639,"2013":522,"2014":640,"2015":641,"2016":642,"2017":643,"2018":644,"2019":642,"2020":645,"2021":292,"2022":646,"2023":522,"2024":38},1.33,0.45,2.22,0.39,1.35,0.47,0.67,0.92,0.73,0.64,0.41,[],"http:\u002F\u002Fstdjhs.scienceandtechnology.com.vn\u002Findex.php\u002Fstdjhs","\u002Fapi\u002Fpublic\u002Ffile\u002Fpublisher\u002F19221551-7519-47ff-a892-331d1139c64b\u002F2e10768b7d1e380c36a25ed0c714dd7e.png",{"impactFactor":36,"impactFactorByYear":651,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":652,"totalPublicationByYear":653,"totalCitation":516,"totalCitationByYear":654,"totalCitationPerPublication":151,"totalCitationPerPublicationByYear":655,"hindexLast5Year":59,"hindex":59},{"2022":57,"2023":108,"2024":39},79,{"2020":116,"2021":240,"2022":239,"2023":52,"2024":162,"2025":162},{"2020":59,"2021":51,"2022":59},{"2020":443,"2021":387,"2022":54},{"code":657,"data":658,"meta":26},"SUCCESS",{"id":659,"createTime":660,"updateTime":661,"relativeEntities":662,"slug":663,"properties":664,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":671,"manageAffiliations":704,"indexDatabases":725,"url":26,"thumbnailPath":26,"statistic":768,"gsStatistic":26,"type":26,"analyzePriority":26},"4a29c620-17a4-483f-8081-3c57c26ef328","2024-04-12T02:12:58.252+00:00","2025-11-21T10:06:08.891+00:00",[],"Springer-Science-and-Business-Media-LLC",{"issn":665,"eissn":667,"title":669},{"VOID":666},"1569-8025",{"VOID":668},"1572-8137",{"EN":670},"Springer Science and Business Media LLC",[672,680,688,696],{"id":673,"createTime":674,"updateTime":675,"relativeEntities":676,"label":677,"description":679,"parentId":26,"standard":26,"scholarHubFieldId":26},"1651061d-c437-4d12-b5e5-0e01f9ece55f","2023-05-29T10:24:01.993+00:00","2023-11-21T07:43:06.980+00:00",[],{"EN":678},"Electronic, Optical and Magnetic Materials",{},{"id":681,"createTime":682,"updateTime":683,"relativeEntities":684,"label":685,"description":687,"parentId":26,"standard":26,"scholarHubFieldId":26},"78a58205-ad3c-44c8-884e-f16b78feebfa","2023-05-29T10:24:10.811+00:00","2023-11-21T08:08:48.011+00:00",[],{"EN":686},"Modeling and Simulation",{},{"id":689,"createTime":690,"updateTime":691,"relativeEntities":692,"label":693,"description":695,"parentId":26,"standard":26,"scholarHubFieldId":26},"a836ac5f-012c-40bd-b4b2-b48edce11e9b","2023-05-29T10:24:18.917+00:00","2023-11-21T07:02:52.837+00:00",[],{"EN":694},"Atomic and Molecular Physics, and Optics",{},{"id":697,"createTime":698,"updateTime":699,"relativeEntities":700,"label":701,"description":703,"parentId":26,"standard":26,"scholarHubFieldId":26},"3ca6493e-aecd-4733-965c-52fbf88fe329","2023-05-29T10:24:06.812+00:00","2023-11-21T07:36:36.362+00:00",[],{"EN":702},"Electrical and Electronic Engineering",{},[705,714],{"id":706,"createTime":707,"updateTime":708,"relativeEntities":709,"slug":710,"properties":711,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"url":26,"parentIds":713,"statistic":26},"26a19206-5cad-4456-bb2f-49abd254fbc6","2024-04-19T01:59:34.612+00:00","2025-11-21T10:06:47.646+00:00",[],"SPRINGER",{"title":712},{"EN":710},[],{"id":715,"createTime":716,"updateTime":717,"relativeEntities":718,"slug":719,"properties":720,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":50,"url":26,"parentIds":723,"statistic":26},"b2bfac93-563a-4fa4-bd81-e546a66bf9bd","2023-05-29T10:24:01.641+00:00","2025-11-21T10:06:17.751+00:00",[],"Springer-Netherlands",{"title":721},{"EN":722},"Springer Netherlands",[724],"9a7c7208-b28a-42c2-a634-5a7f90eee3ab",[726,748],{"id":727,"indexDatabase":728,"url":740,"indexYears":741,"academicFieldIds":742,"indexDatabaseRanking":747},"62839e5f-7b3e-471b-a9ef-5917f1a9084f",{"id":729,"createTime":730,"updateTime":731,"relativeEntities":732,"label":733,"description":735,"key":737,"publicationTags":738,"standard":26},"3c7051d4-eb7d-4c57-a56b-36fc74c5d1e9","2023-05-22T09:57:18.509+00:00","2025-11-21T10:07:52.274+00:00",[],{"EN":734,"VI":734},"Scopus - Elsevier",{"EN":734,"VI":736},"Cơ sở dữ liệu Scopus thuộc Elsevier","scopus",[739],"SCOPUS","https:\u002F\u002Fwww.scopus.com\u002Fsourceid\u002F144926","2002-2025",[743,744,745,746],"09f6b045-208a-4e88-8bae-2e53a1e1a893","a81768cc-7885-48eb-a85a-170d5a0a5f4f","d7d042e5-1a2c-4479-aae6-950ae1375752","0e6bd987-5c67-4e9a-8af2-07c289f5e45c","SCOPUS__Q2",{"id":749,"indexDatabase":750,"url":764,"indexYears":26,"academicFieldIds":765,"indexDatabaseRanking":26},"238c14ad-8090-4151-956e-dd438d8b2514",{"id":751,"createTime":752,"updateTime":753,"relativeEntities":754,"label":755,"description":757,"key":760,"publicationTags":761,"standard":26},"a4921856-b128-4d9f-8f1f-e80813d3bbd4","2023-05-22T09:59:31.026+00:00","2025-11-21T10:07:52.153+00:00",[],{"EN":756,"VI":756},"ISI\u002FSCIE - Science Citation Index Expanded",{"VI":758,"EN":759},"Cơ sở dữ liệu SCIE","SCIE database","scie",[762,763],"SCIE","ISI","https:\u002F\u002Fmjl.clarivate.com\u002Fsearch-results?issn=1569-8025",[766,767],"751df115-4b08-418e-b118-c9d9a4c8e64c","0a89cee9-2df6-4b14-8fcb-700fd0044c25",{"impactFactor":36,"impactFactorByYear":769,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":781,"totalCitation":782,"totalCitationByYear":783,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":795,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},1.07,3.7,1.72,1.06,1.31,1.56,1.98,2.15,3.11,3.13,87,{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},2905,{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},172,103,61,82,268,211,203,215,196,380,9.25,{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},6.64,4.86,11.47,6.73,6.8,11.44,10.17,20.5,22.33,12.41,9.53,10.15,12.69,10.5,13.44,9.33,8.84,2.65,0.82,{"meta":816,"data":818},{"total":817},"1617",[819,1222,2533,2864,3112,3392,3856,4143,4224,4611],{"id":820,"createTime":821,"updateTime":822,"relativeEntities":823,"slug":824,"properties":825,"entityType":836,"verifyStatus":25,"verifyTime":822,"verifyNote":837,"syncStatus":28,"languages":838,"translateLanguages":26,"viewCount":36,"primaryUrl":839,"fullTextUrl":26,"authors":840,"publicationType":881,"publisherRelationship":882,"citationCount":790,"citationInfo":911,"publishDate":913,"publishYear":914,"citationAnalyzeStatus":915,"lastCitationAnalyze":916,"indexDatabases":26,"openAccess":26,"references":917,"isForceReanalyzing":1221},"721c4182-633c-4fa0-a22c-266c70f55286","2024-04-13T22:31:09.701+00:00","2025-01-26T02:29:17.394+00:00",[],"The-recursive-Green-s-function-method-for-graphene",{"mag":826,"keywords":828,"openalex":829,"abstract":831,"title":832,"doi":834},{"VOID":827},"1997458057",{},{"VOID":830},"W1997458057",{},{"EN":833},"The recursive Green’s function method for graphene",{"VOID":835},"10.1007\u002Fs10825-013-0458-7","PUBLICATION","Auto Verify",[102],"http:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-013-0458-7",[841,862],{"id":842,"sortIndex":115,"researcher":26,"roles":843,"affiliations":844,"properties":855},"84354da0-9982-4c5c-a9ac-09be3a0c53a7",[],[845],{"id":26,"sortIndex":36,"affiliation":846,"properties":26},{"id":847,"createTime":848,"updateTime":849,"relativeEntities":850,"slug":851,"properties":852,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"727146af-d88f-49a6-a6fc-08a302b74482","2024-01-05T02:43:32.921+00:00","2024-10-13T17:26:05.455+00:00",[],"Department-of-Physics-University-of-Central-Florida-Orlando-FL-32816-2385-USA",{"title":853},{"VI":854},"Department of Physics, University of Central Florida, Orlando, FL 32816-2385, USA",{"openalex":856,"orcid":858,"title":860},{"VOID":857},"A5071614186",{"VOID":859},"https:\u002F\u002Forcid.org\u002F0000-0002-8629-0509",{"EN":861},"Eduardo R. Mucciolo",{"id":863,"sortIndex":36,"researcher":26,"roles":864,"affiliations":865,"properties":874},"42bdc5ec-d9ed-467b-954b-333cadc086a7",[],[866],{"id":26,"sortIndex":36,"affiliation":867,"properties":26},{"id":868,"createTime":869,"updateTime":869,"relativeEntities":870,"slug":26,"properties":871,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"4faf62cf-e392-4fba-a094-e8feff13524c","2023-12-12T09:58:36.975+00:00",[],{"title":872},{"VI":873},"Instituto de Física, Universidade Federal Fluminense, 24210-346 Niteroi, RJ, Brazil",{"openalex":875,"orcid":877,"title":879},{"VOID":876},"A5044661864",{"VOID":878},"https:\u002F\u002Forcid.org\u002F0000-0002-2053-2798",{"EN":880},"Caio Lewenkopf","ARTICLE",{"url":26,"publisher":883,"properties":26},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":884,"slug":663,"properties":885,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":889,"manageAffiliations":890,"indexDatabases":891,"url":26,"thumbnailPath":26,"statistic":906,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":886,"eissn":887,"title":888},{"VOID":666},{"VOID":668},{"EN":670},[],[],[892,899],{"id":727,"indexDatabase":893,"url":740,"indexYears":741,"academicFieldIds":898,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":894,"label":895,"description":896,"key":737,"publicationTags":897,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":900,"url":764,"indexYears":26,"academicFieldIds":905,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":901,"label":902,"description":903,"key":760,"publicationTags":904,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":907,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":908,"totalCitation":782,"totalCitationByYear":909,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":910,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"total":790,"publishYear":26,"statisticByYear":912},{"2013":114,"2014":53,"2015":356,"2016":239,"2017":239,"2018":516,"2019":242,"2020":234,"2021":237,"2022":238,"2023":242,"2024":135},"2013-06-01",2013,"ERROR_IN_ANALYZE_CITATION","2024-04-14T09:15:48.369+00:00",[918,922,926,930,933,937,940,944,948,952,956,960,964,968,972,975,978,982,986,990,993,996,1000,1003,1007,1011,1015,1019,1022,1026,1030,1034,1037,1040,1044,1048,1052,1056,1060,1063,1067,1071,1075,1079,1083,1087,1090,1094,1098,1101,1105,1109,1113,1117,1121,1125,1129,1133,1137,1140,1143,1147,1151,1155,1158,1162,1165,1169,1173,1177,1181,1185,1188,1192,1196,1199,1203,1206,1210,1214,1218],{"id":26,"text":919,"url":26,"identifiers":920},"Castro Neto, A.H.F., Guinea, F., Peres, N.M.R., Novoselov, K.S., Geim, A.K.: The electronic properties of graphene. Rev. Mod. Phys. 81, 109 (2009)",{"doi":921},"10.1103\u002FRevModPhys.81.109",{"id":26,"text":923,"url":26,"identifiers":924},"Mucciolo, E.R., Lewenkopf, C.H.: Disorder and electronic transport in graphene. J. Phys. Condens. Matter 22, 273201 (2010)",{"doi":925},"10.1088\u002F0953-8984\u002F22\u002F27\u002F273201",{"id":26,"text":927,"url":26,"identifiers":928},"Shon, N.H., Ando, T.: Quantum transport in two-dimensional graphite system. J. Phys. Soc. Jpn. 67, 2421 (1998)",{"doi":929},"10.1143\u002FJPSJ.67.2421",{"id":26,"text":931,"url":26,"identifiers":932},"Ostrovsky, P.M., Gornyi, I.V., Mirlin, A.D.: Electron transport in disordered graphene. Phys. Rev. B 74, 235443 (2006)",{},{"id":26,"text":934,"url":26,"identifiers":935},"Nomura, K., MacDonald, A.H.: Quantum transport of massless Dirac fermions. Phys. Rev. Lett. 98, 076602 (2007)",{"doi":936},"10.1103\u002FPhysRevLett.98.076602",{"id":26,"text":938,"url":26,"identifiers":939},"Nomura, K., Koshino, M., Ryu, S.: Topological delocalization of two-dimensional massless Dirac fermions. Phys. Rev. Lett. 99, 146806 (2007)",{},{"id":26,"text":941,"url":26,"identifiers":942},"Tworzydło, J., Groth, C.W., Beenakker, C.W.J.: Finite difference method for transport properties of massless Dirac fermions. Phys. Rev. B 78, 235438 (2008)",{"doi":943},"10.1103\u002FPhysRevB.78.235438",{"id":26,"text":945,"url":26,"identifiers":946},"Hernández, A.R., Lewenkopf, C.H.: Finite-difference method for transport of two-dimensional massless Dirac fermions in a ribbon geometry. Phys. Rev. B 86, 155439 (2012)",{"doi":947},"10.1103\u002FPhysRevB.86.155439",{"id":26,"text":949,"url":26,"identifiers":950},"Thouless, D.J., Kirkpatrick, S.: Conductivity of the disordered linear chain. J. Phys. C 14, 235 (1981)",{"doi":951},"10.1088\u002F0022-3719\u002F14\u002F3\u002F007",{"id":26,"text":953,"url":26,"identifiers":954},"Drouvelis, P.S., Schmelcher, P., Bastian, P.: Parallel implementation of the recursive Green’s function method. J. Comput. Phys. 215, 741 (2006)",{"doi":955},"10.1016\u002Fj.jcp.2005.11.010",{"id":26,"text":957,"url":26,"identifiers":958},"MacKinnon, A.: The calculation of transport properties and density of states of disordered solids. Z. Phys. B 59, 385 (1985)",{"doi":959},"10.1007\u002FBF01328846",{"id":26,"text":961,"url":26,"identifiers":962},"Sols, F., Macucci, M., Ravaioli, U., Hess, K.: Theory for a quantum modulated transistor. J. Appl. Phys. 66, 3892 (1989)",{"doi":963},"10.1063\u002F1.344032",{"id":26,"text":965,"url":26,"identifiers":966},"Baranger, H.U., DiVincenzo, D.P., Jalabert, R.A., Stone, A.D.: Classical and quantum ballistic-transport anomalies in microjunctions. Phys. Rev. B 44, 10637 (1991)",{"doi":967},"10.1103\u002FPhysRevB.44.10637",{"id":26,"text":969,"url":26,"identifiers":970},"Kazymyrenko, K., Waintal, X.: Knitting algorithm for calculating Green functions in quantum systems. Phys. Rev. B 77, 115119 (2008)",{"doi":971},"10.1103\u002FPhysRevB.77.115119",{"id":26,"text":973,"url":26,"identifiers":974},"Kramer, T., Kreisbeck, C., Krueckl, V.: Wave-packet dynamics approach to transport in mesoscopic systems. Phys. Scr. 82, 038101 (2010)",{},{"id":26,"text":976,"url":26,"identifiers":977},"Yuan, S., De Raedt, H., Katsnelson, M.I.: Modeling electronic structure and transport properties of graphene with resonant scattering centers. Phys. Rev. B 82, 115448 (2010)",{},{"id":26,"text":979,"url":26,"identifiers":980},"Weiße, A., Wellein, G., Alvermann, A., Fehske, H.: The kernel polynomial method. Rev. Mod. Phys. 78, 275 (2006)",{"doi":981},"10.1103\u002FRevModPhys.78.275",{"id":26,"text":983,"url":26,"identifiers":984},"Ferreira, A., Viana-Gomes, J., Nilsson, J., Mucciolo, E.R., Peres, N.M.R., Castro Neto, A.H.: Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers. Phys. Rev. B 83, 165402 (2011)",{"doi":985},"10.1103\u002FPhysRevB.83.165402",{"id":26,"text":987,"url":26,"identifiers":988},"Triozon, F., Roche, S.: Efficient linear scaling method for computing the Landauer-Büttiker conductance. Eur. Phys. J. B 46, 427 (2005)",{"doi":989},"10.1140\u002Fepjb\u002Fe2005-00260-x",{"id":26,"text":991,"url":26,"identifiers":992},"Liu, M.-H., Richter, K.: Efficient quantum transport simulation for bulk graphene heterojunctions. Phys. Rev. B 86, 115445 (2012)",{},{"id":26,"text":994,"url":26,"identifiers":995},"Datta, S.: Electronic Transport in Mesoscopic Systems. Cambridge University Press, Cambridge (1996)",{},{"id":26,"text":997,"url":26,"identifiers":998},"Ferry, D.K., Goodnick, S.M.: Transport in Nanostructures. Cambridge University Press, Cambridge (1997)",{"doi":999},"10.1017\u002FCBO9780511626128",{"id":26,"text":1001,"url":26,"identifiers":1002},"Pastawski, H.M., Medina, E.: Tight-Binding methods in quantum transport through molecules and small devices: from the coherent to the decoherent description. Rev. Mex. Fis. 47, 1 (2001)",{},{"id":26,"text":1004,"url":26,"identifiers":1005},"Landauer, R.: Spatial variation of currents and fields due to localized scatterers in metallic conduction. IBM J. Res. Dev. 32, 306 (1988)",{"doi":1006},"10.1147\u002Frd.323.0306",{"id":26,"text":1008,"url":26,"identifiers":1009},"Caroli, C., Combescot, R., Nozieres, P., Saint-James, D.: Direct calculation of the tunneling current. J. Phys. C 4, 916 (1971)",{"doi":1010},"10.1088\u002F0022-3719\u002F4\u002F8\u002F018",{"id":26,"text":1012,"url":26,"identifiers":1013},"Lee, P.A., Fisher, D.S.: Anderson localization in two dimensions. Phys. Rev. Lett. 47, 882 (1981)",{"doi":1014},"10.1103\u002FPhysRevLett.47.882",{"id":26,"text":1016,"url":26,"identifiers":1017},"Fisher, D.S., Lee, P.A.: Relation between conductivity and transmission matrix. Phys. Rev. B 23, 6851 (1981)",{"doi":1018},"10.1103\u002FPhysRevB.23.6851",{"id":26,"text":1020,"url":26,"identifiers":1021},"Sajjad, R.N., Polanco, C., Ghosh, A.W.: Atomistic deconstruction of current flow in graphene based hetero-junctions (2013). arXiv:1302.4473",{},{"id":26,"text":1023,"url":26,"identifiers":1024},"Meir, Y., Wingreen, N.S.: Landauer formula for the current through an interacting electron region. Phys. Rev. Lett. 68, 2512 (1992)",{"doi":1025},"10.1103\u002FPhysRevLett.68.2512",{"id":26,"text":1027,"url":26,"identifiers":1028},"Hernández, A., Apel, V.M., Pinheiro, F.A., Lewenkopf, C.H.: Quantum electronic transport: linear and nonlinear conductance from the Keldysh approach. Physica A 385, 148 (2007)",{"doi":1029},"10.1016\u002Fj.physa.2007.06.032",{"id":26,"text":1031,"url":26,"identifiers":1032},"Lewenkopf, C.H., Mucciolo, E.R., Castro Neto, A.H.: Numerical studies of conductivity and Fano factor in disordered graphene. Phys. Rev. B 77, 081410R (2008)",{"doi":1033},"10.1103\u002FPhysRevB.77.081410",{"id":26,"text":1035,"url":26,"identifiers":1036},"Haug, H., Jauho, A.-P.: Quantum Kinetics in Transport and Optics of Semiconductors, 2nd edn. Springer, Heidelberg (2008)",{},{"id":26,"text":1038,"url":26,"identifiers":1039},"Mucciolo, E.R.: Unpublished",{},{"id":26,"text":1041,"url":26,"identifiers":1042},"Schomerus, H.: Effective contact model for transport through weakly-doped graphene. Phys. Rev. B 76, 045433 (2007)",{"doi":1043},"10.1103\u002FPhysRevB.76.045433",{"id":26,"text":1045,"url":26,"identifiers":1046},"Areshkin, D.A., Nikolić, B.K.: I-V curve signatures of nonequilibrium-driven band gap collapse in magnetically ordered zigzag graphene nanoribbon two-terminal devices. Phys. Rev. B 79, 205430 (2009)",{"doi":1047},"10.1103\u002FPhysRevB.79.205430",{"id":26,"text":1049,"url":26,"identifiers":1050},"Lopez Sancho, M.P., Lopez Sancho, J.M., Rubio, J.: Highly convergent schemes for the calculation of bulk and surface Green functions. J. Phys. F, Met. Phys. 15, 851 (1985)",{"doi":1051},"10.1088\u002F0305-4608\u002F15\u002F4\u002F009",{"id":26,"text":1053,"url":26,"identifiers":1054},"Umerski, A.: Closed-form solutions to surface Green’s functions. Phys. Rev. B 55, 5266 (1997)",{"doi":1055},"10.1103\u002FPhysRevB.55.5266",{"id":26,"text":1057,"url":26,"identifiers":1058},"Rocha, A.R., García-Suárez, V.M., Bailey, S., Lambert, C., Ferrer, J., Sanvito, S.: Spin and molecular electronics in atomically generated orbital landscapes. Phys. Rev. B 73, 085414 (2006)",{"doi":1059},"10.1103\u002FPhysRevB.73.085414",{"id":26,"text":1061,"url":26,"identifiers":1062},"Wimmer, M.: Quantum transport in nanostructures: From computational concepts to spintronics in graphene and magnetic tunnel junctions. Dissertation, University Regensburg (2009). http:\u002F\u002Fepub.uni-regensburg.de\u002F12142\u002F",{},{"id":26,"text":1064,"url":26,"identifiers":1065},"Tworzydło, J., Trauzettel, B., Titov, M., Rycerz, A., Beenakker, C.W.J.: Sub-poissonian shot noise in graphene. Phys. Rev. Lett. 96, 246802 (2006). Supplementary material is found in arXiv:cond-mat\u002F0603315",{"doi":1066},"10.1103\u002FPhysRevLett.96.246802",{"id":26,"text":1068,"url":26,"identifiers":1069},"Rycerz, A., Tworzydło, J., Beenakker, C.W.J.: Anomalously large conductance fluctuations in weakly disordered graphene. Europhys. Lett. 79, 57003 (2007)",{"doi":1070},"10.1209\u002F0295-5075\u002F79\u002F57003",{"id":26,"text":1072,"url":26,"identifiers":1073},"Metalidis, G., Bruno, P.: Green’s function technique for studying electron flow in two-dimensional mesoscopic samples. Phys. Rev. B 72, 235304 (2005)",{"doi":1074},"10.1103\u002FPhysRevB.72.235304",{"id":26,"text":1076,"url":26,"identifiers":1077},"Todorov, T.N.: Tight-binding simulation of current-carrying nanostructures. J. Phys. Condens. Matter 14, 3049 (2002)",{"doi":1078},"10.1088\u002F0953-8984\u002F14\u002F11\u002F314",{"id":26,"text":1080,"url":26,"identifiers":1081},"Cresti, A., Farchioni, R., Grosso, G., Parravicini, G.P.: Keldysh-Green function formalism for current profiles in mesoscopic systems. Phys. Rev. B 68, 075306 (2003)",{"doi":1082},"10.1103\u002FPhysRevB.68.075306",{"id":26,"text":1084,"url":26,"identifiers":1085},"Yazyev, O.: Emergence of magnetism in graphene materials and nanostructures. Rep. Prog. Phys. 73, 056501 (2010)",{"doi":1086},"10.1088\u002F0034-4885\u002F73\u002F5\u002F056501",{"id":26,"text":1088,"url":26,"identifiers":1089},"Son, Y.W., Cohen, M.L., Louie, S.G.: Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 97, 216803 (2006)",{},{"id":26,"text":1091,"url":26,"identifiers":1092},"Xue, Y., Datta, S., Ratner, M.A.: First-principles based matrix Green’s function approach to molecular electronic devices: general formalism. Chem. Phys. 281, 151 (2002)",{"doi":1093},"10.1016\u002FS0301-0104(02)00446-9",{"id":26,"text":1095,"url":26,"identifiers":1096},"Areshkin, D.A., Nikolić, B.K.: Electron density and transport in top-gated graphene nanoribbon devices: first-principles Green function algorithms for systems containing a large number of atoms. Phys. Rev. B 81, 155540 (2010)",{"doi":1097},"10.1103\u002FPhysRevB.81.155450",{"id":26,"text":1099,"url":26,"identifiers":1100},"Bruus, H., Flensberg, K.: Many-Body Quantum Theory in Condensed Matter Physics: An Introduction. Oxford University Press, New York (2004)",{},{"id":26,"text":1102,"url":26,"identifiers":1103},"Nazarov, Y.V., Blanter, Y.M.: Quantum Transport: Introduction to Nanoscience. Cambridge University Press, New York (2009)",{"doi":1104},"10.1017\u002FCBO9780511626906",{"id":26,"text":1106,"url":26,"identifiers":1107},"Büttiker, M.: Coherent and sequential tunneling in series barriers. IBM J. Res. Dev. 32, 63 (1988)",{"doi":1108},"10.1147\u002Frd.321.0063",{"id":26,"text":1110,"url":26,"identifiers":1111},"D’Amato, J.L., Pastawski, H.M.: Conductance of a disordered linear chain including inelastic scattering events. Phys. Rev. B 41, 7411 (1990)",{"doi":1112},"10.1103\u002FPhysRevB.41.7411",{"id":26,"text":1114,"url":26,"identifiers":1115},"Martin, J., Akerman, N., Ulbricht, G., Lohmann, T.: Observation of electron-hole puddles in graphene using a scanning single electron transistor. Nat. Phys. 4, 144 (2008)",{"doi":1116},"10.1038\u002Fnphys781",{"id":26,"text":1118,"url":26,"identifiers":1119},"Zhang, Y., Brar, V.W., Girit, C., Zettl, A., Crommie, M.F.: Origin of spatial charge inhomogeneity in graphene. Nat. Phys. 5, 722 (2009)",{"doi":1120},"10.1038\u002Fnphys1365",{"id":26,"text":1122,"url":26,"identifiers":1123},"Ishigami, M., Chen, J.H., Cullen, W.G., Fuhrer, M.S., Williams, E.D.: Atomic structure of graphene on SiO2. Nano Lett. 7, 1643 (2007)",{"doi":1124},"10.1021\u002Fnl070613a",{"id":26,"text":1126,"url":26,"identifiers":1127},"Meyer, J.C., Geim, A.K., Katsnelson, M.I., Novoselov, K.S., Obergfell, D., Roth, S., Girit, Ç., Zettl, A.: On the roughness of single- and bi-layer graphene membranes. Solid State Commun. 143, 101 (2007)",{"doi":1128},"10.1016\u002Fj.ssc.2007.02.047",{"id":26,"text":1130,"url":26,"identifiers":1131},"Levy, N., Burke, K.L., Meaker, S.A., Panlasigui, M., Zettl, A., Guinea, F., Castro Neto, A.H., Crommie, M.F.: Strain-induced pseudo-magnetic fields greater than 300 Tesla in graphene nanobubbles. Science 329, 544 (2010)",{"doi":1132},"10.1126\u002Fscience.1191700",{"id":26,"text":1134,"url":26,"identifiers":1135},"Chen, J.H., Jang, C., Adam, S., Fuhrer, M.S., Williams, E.D., Ishigami, M.: Charged-impurity scattering in graphene. Nat. Phys. 4, 377 (2008)",{"doi":1136},"10.1038\u002Fnphys935",{"id":26,"text":1138,"url":26,"identifiers":1139},"Chen, J.-H., Cullen, W.G., Jang, C., Fuhrer, M.S., Williams, E.D.: Defect scattering in graphene. Phys. Rev. Lett. 102, 236805 (2009)",{},{"id":26,"text":1141,"url":26,"identifiers":1142},"Han, M., Brant, J.C., Kim, P.: Electron transport in disordered graphene nanoribbons. Phys. Rev. Lett. 104, 056801 (2010)",{},{"id":26,"text":1144,"url":26,"identifiers":1145},"Peres, N.M.R.: Colloquium: the transport properties of graphene: an introduction. Rev. Mod. Phys. 82, 2673 (2010)",{"doi":1146},"10.1103\u002FRevModPhys.82.2673",{"id":26,"text":1148,"url":26,"identifiers":1149},"Das Sarma, S., Adam, S., Hwang, E.H., Rossi, E.: Electronic transport in two-dimensional graphene. Rev. Mod. Phys. 83, 407 (2011)",{"doi":1150},"10.1103\u002FRevModPhys.83.407",{"id":26,"text":1152,"url":26,"identifiers":1153},"Adam, S., Brouwer, P.W., Das Sarma, S.: Crossover from quantum to Boltzmann transport in graphene. Phys. Rev. B 79, 201404 (2009)",{"doi":1154},"10.1103\u002FPhysRevB.79.201404",{"id":26,"text":1156,"url":26,"identifiers":1157},"Kłos, J.W., Zozoulenko, I.V.: Effect of short- and long range scattering on the conductivity of graphene: Boltzmann approach vs tight-binding calculations. Phys. Rev. B 82, 081414(R) (2010)",{},{"id":26,"text":1159,"url":26,"identifiers":1160},"Pereira, V.M., Castro Neto, A.H., Peres, N.M.R.: Tight-binding approach to uniaxial strain in graphene. Phys. Rev. B 80, 045401 (2009)",{"doi":1161},"10.1103\u002FPhysRevB.80.045401",{"id":26,"text":1163,"url":26,"identifiers":1164},"Landau, L.D., Lifshitz, E.M.: Theory of Elasticity, 3rd edn. Pergamon, London (1986)",{},{"id":26,"text":1166,"url":26,"identifiers":1167},"Kim, E.-A., Castro Neto, A.H.: Graphene as an electronic membrane. Europhys. Lett. 84, 57007 (2008)",{"doi":1168},"10.1209\u002F0295-5075\u002F84\u002F57007",{"id":26,"text":1170,"url":26,"identifiers":1171},"Vozmediano, M.A.H., Katsnelson, M.I., Guinea, F.: Gauge fields in graphene. Phys. Rep. 496, 109 (2010)",{"doi":1172},"10.1016\u002Fj.physrep.2010.07.003",{"id":26,"text":1174,"url":26,"identifiers":1175},"Peierls, R.E.: Zur Theorie des Diamagnetismus von Leitungselektronen. Z. Phys. 80, 763 (1933)",{"doi":1176},"10.1007\u002FBF01342591",{"id":26,"text":1178,"url":26,"identifiers":1179},"Lundeberg, M.B., Folk, J.A.: Rippled graphene in an in-plane magnetic field: effects of a random vector potential. Phys. Rev. Lett. 105, 146804 (2010)",{"doi":1180},"10.1103\u002FPhysRevLett.105.146804",{"id":26,"text":1182,"url":26,"identifiers":1183},"Sols, F., Guinea, F., Castro Neto, A.H.: Coulomb blockade in graphene nanoribbons. Phys. Rev. Lett. 99, 166803 (2007)",{"doi":1184},"10.1103\u002FPhysRevLett.99.166803",{"id":26,"text":1186,"url":26,"identifiers":1187},"Vérges, J.A., Guinea, F., Chiappe, G., Louis, E.: Transport regimes in surface disordered graphene sheets. Phys. Rev. B 75, 085440 (2007)",{},{"id":26,"text":1189,"url":26,"identifiers":1190},"Evaldsson, M., Zozoulenko, I.V., Xu, H., Heinzel, T.: Edge disorder induced Anderson localization and conduction gap in graphene nanoribbons. Phys. Rev. B 78, 161407(R) (2008)",{"doi":1191},"10.1103\u002FPhysRevB.78.161407",{"id":26,"text":1193,"url":26,"identifiers":1194},"Mucciolo, E.R., Castro Neto, A.H., Lewenkopf, C.H.: Conductance quantization and transport gaps in disordered graphene nanoribbons. Phys. Rev. B 79, 075407 (2009)",{"doi":1195},"10.1103\u002FPhysRevB.79.075407",{"id":26,"text":1197,"url":26,"identifiers":1198},"Brey, L., Fertig, H.A.: Electronic states of graphene nanoribbons studied with the Dirac equation. Phys. Rev. B 73, 235411 (2006)",{},{"id":26,"text":1200,"url":26,"identifiers":1201},"Zârbo, L.P., Nikolić, B.K.: Spatial distribution of local currents of massless Dirac fermions in quantum transport through graphene nanoribbons. Europhys. Lett. 80, 47001 (2007)",{"doi":1202},"10.1209\u002F0295-5075\u002F80\u002F47001",{"id":26,"text":1204,"url":26,"identifiers":1205},"Chang, P.-H., Nikolić, B.K.: Edge currents and nanopore arrays in zigzag and chiral graphene nanoribbons as a route toward high-ZT thermoelectrics. Phys. Rev. B 86, 041406(R) (2012)",{},{"id":26,"text":1207,"url":26,"identifiers":1208},"Tao, C., Jiao, L., Yazyev, O.V., Chen, Y.-C., Feng, J., Zhang, X., Capaz, R.B., Tour, J.M., Zettl, A., Louie, S.G., Dai, H., Crommie, M.F.: Spatially resolving edge states of chiral graphene nanoribbons. Nat. Phys. 7, 616 (2011)",{"doi":1209},"10.1038\u002Fnphys1991",{"id":26,"text":1211,"url":26,"identifiers":1212},"Wakabayashi, K., Takane, Y., Sigrist, M.: Perfectly conducting channel and universality crossover in disordered graphene nanoribbons. Phys. Rev. Lett. 99, 036601 (2007)",{"doi":1213},"10.1103\u002FPhysRevLett.99.036601",{"id":26,"text":1215,"url":26,"identifiers":1216},"Wakabayashi, K., Takane, Y., Yamamoto, M., Sigrist, M.: Electronic transport properties of graphene nanoribbons. New J. Phys. 11, 095016 (2009)",{"doi":1217},"10.1088\u002F1367-2630\u002F11\u002F9\u002F095016",{"id":26,"text":1219,"url":26,"identifiers":1220},"Lima, L.R.F., Pinheiro, F.A., Capaz, R.B., Lewenkopf, C.H., Mucciolo, E.R.: Effects of disorder range and electronic energy on the perfect transmission in graphene nanoribbons. Phys. Rev. B 86, 205111 (2012)",{},false,{"id":1223,"createTime":1224,"updateTime":1225,"relativeEntities":1226,"slug":1227,"properties":1228,"entityType":836,"verifyStatus":25,"verifyTime":1243,"verifyNote":837,"syncStatus":28,"languages":1244,"translateLanguages":1245,"viewCount":36,"primaryUrl":1246,"fullTextUrl":26,"authors":1247,"publicationType":881,"publisherRelationship":1299,"citationCount":1328,"citationInfo":1329,"publishDate":1331,"publishYear":1332,"citationAnalyzeStatus":915,"lastCitationAnalyze":1333,"indexDatabases":26,"openAccess":26,"references":1334,"isForceReanalyzing":1221},"1d508df1-5beb-42b4-8de7-13be1eacacc3","2024-04-12T04:15:33.802+00:00","2025-01-01T19:08:59.505+00:00",[],"Spintronic-devices-a-promising-alternative-to-CMOS-devices",{"mag":1229,"keywords":1231,"openalex":1233,"abstract":1235,"title":1238,"doi":1241},{"VOID":1230},"3124964455",{"VI":1232},"spintronics; thiết bị spintronic; điện tử; kiến trúc xử lý trong bộ nhớ; hiệu ứng từ trở; kháng quán tính spin",{"VOID":1234},"W3124964455",{"VI":1236,"EN":1237},"\u003Cjats:title>Tóm tắt\u003C\u002Fjats:title>\u003Cjats:p>Lĩnh vực spintronics đã thu hút sự chú ý mạnh mẽ gần đây nhờ khả năng cung cấp giải pháp cho vấn đề tiêu tán năng lượng gia tăng trong các mạch điện tử trong khi công nghệ đang thu nhỏ lại. Các cấu trúc dựa trên spintronic sử dụng mức độ tự do quay của electron, điều này làm cho chúng trở nên độc đáo với độ rò rỉ chờ bằng không, tiêu thụ điện năng thấp, độ bền vô hạn, khả năng đọc và ghi tốt, tính phi hành và khả năng tích hợp 3D dễ dàng với các mạch điện tử hiện nay dựa trên công nghệ CMOS. Tất cả những ưu điểm này đã thúc đẩy các hoạt động nghiên cứu tích cực để áp dụng các thiết bị spintronic vào các đơn vị bộ nhớ và cũng tái định nghĩa khái niệm kiến trúc xử lý trong bộ nhớ cho tương lai. Bài báo tổng quan này khám ph á những mốc quan trọng thiết yếu trong lĩnh vực tiến hóa của spintronics. Nó bao gồm nhiều hiện tượng vật lý khác nhau như hiệu ứng từ trở khổng lồ, hiệu ứng từ trở đường hầm, mô men xoắn truyền spin, hiệu ứng Hall spin, hiệu ứng dị hướng từ điều khiển điện áp, và chuyển động của tường miền \u002F skyrmions do dòng điện gây ra. Hơn nữa, nhiều thiết bị spintronic như van spin, mối nối đường hầm từ, bộ nhớ đường đua dựa trên tường miền, các thiết bị logic toàn spin, và gần đây là skyrmions đang rung chuyển và các thiết bị dựa trên từ tính \u002F silic lai cũng được thảo luận. Một mô tả chi tiết về các cơ chế chuyển đổi khác nhau để ghi thông tin vào những thiết bị spintronic này cũng được xem xét. Một cái nhìn tổng quan về các thiết bị dựa trên từ tính \u002F silic lai có khả năng được sử dụng cho kiến trúc xử lý trong bộ nhớ (logic trong bộ nhớ) trong tương lai gần được mô tả ở cuối. Trong bài báo này, chúng tôi đã cố gắng giới thiệu một lịch sử ngắn gọn, tình trạng hiện tại và triển vọng tương lai của lĩnh vực spintronics cho những người mới bắt đầu.","\u003Cjats:title>Abstract\u003C\u002Fjats:title>\u003Cjats:p>The field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall\u002Fskyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic\u002Fsilicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic \u002Fsilicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.\u003C\u002Fjats:p>",{"VI":1239,"EN":1240},"Các thiết bị spintronic: một lựa chọn đầy hứa hẹn cho các thiết bị CMOS","Spintronic devices: a promising alternative to CMOS devices",{"VOID":1242},"10.1007\u002Fs10825-020-01648-6","2024-12-23T09:33:53.288+00:00",[102],[101],"https:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-020-01648-6",[1248,1267,1283],{"id":1249,"sortIndex":114,"researcher":26,"roles":1250,"affiliations":1251,"properties":1260},"a5aad4eb-7aea-4759-b140-3809017d680d",[],[1252],{"id":26,"sortIndex":36,"affiliation":1253,"properties":26},{"id":1254,"createTime":1255,"updateTime":1255,"relativeEntities":1256,"slug":26,"properties":1257,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"17f66087-cff9-4885-b696-26efb64a5c3e","2024-01-05T03:27:58.308+00:00",[],{"title":1258},{"VI":1259},"Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, India",{"openalex":1261,"orcid":1263,"title":1265},{"VOID":1262},"A5016502376",{"VOID":1264},"https:\u002F\u002Forcid.org\u002F0000-0003-3434-0751",{"EN":1266},"Somashekara Bhat",{"id":1268,"sortIndex":36,"researcher":26,"roles":1269,"affiliations":1270,"properties":1276},"aa15b757-be54-4d9a-8726-0b869d3a0d57",[],[1271],{"id":26,"sortIndex":36,"affiliation":1272,"properties":26},{"id":1254,"createTime":1255,"updateTime":1255,"relativeEntities":1273,"slug":26,"properties":1274,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1275},{"VI":1259},{"openalex":1277,"orcid":1279,"title":1281},{"VOID":1278},"A5076429291",{"VOID":1280},"https:\u002F\u002Forcid.org\u002F0000-0001-6308-6348",{"EN":1282},"Prashanth Barla",{"id":1284,"sortIndex":115,"researcher":26,"roles":1285,"affiliations":1286,"properties":1292},"3f5b9573-8907-44a4-9099-2c92906ae223",[],[1287],{"id":26,"sortIndex":36,"affiliation":1288,"properties":26},{"id":1254,"createTime":1255,"updateTime":1255,"relativeEntities":1289,"slug":26,"properties":1290,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1291},{"VI":1259},{"openalex":1293,"orcid":1295,"title":1297},{"VOID":1294},"A5022523612",{"VOID":1296},"https:\u002F\u002Forcid.org\u002F0000-0001-6852-6357",{"EN":1298},"Vinod Kumar Joshi",{"url":26,"publisher":1300,"properties":26},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":1301,"slug":663,"properties":1302,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":1306,"manageAffiliations":1307,"indexDatabases":1308,"url":26,"thumbnailPath":26,"statistic":1323,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":1303,"eissn":1304,"title":1305},{"VOID":666},{"VOID":668},{"EN":670},[],[],[1309,1316],{"id":727,"indexDatabase":1310,"url":740,"indexYears":741,"academicFieldIds":1315,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":1311,"label":1312,"description":1313,"key":737,"publicationTags":1314,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":1317,"url":764,"indexYears":26,"academicFieldIds":1322,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":1318,"label":1319,"description":1320,"key":760,"publicationTags":1321,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":1324,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":1325,"totalCitation":782,"totalCitationByYear":1326,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":1327,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},98,{"total":1328,"publishYear":26,"statisticByYear":1330},{"2021":158,"2022":159,"2023":286,"2024":50},"2021-04-01",2021,"2024-04-13T14:07:22.256+00:00",[1335,1339,1343,1346,1350,1354,1358,1362,1366,1370,1374,1378,1382,1386,1390,1394,1398,1402,1405,1409,1413,1417,1421,1425,1429,1433,1437,1441,1445,1449,1452,1456,1460,1464,1468,1471,1475,1479,1483,1487,1491,1495,1499,1503,1507,1511,1515,1518,1521,1525,1529,1533,1537,1541,1545,1549,1553,1557,1561,1565,1569,1573,1577,1580,1584,1588,1592,1596,1599,1603,1607,1610,1614,1618,1622,1626,1630,1634,1638,1642,1646,1650,1654,1658,1662,1666,1670,1674,1678,1682,1686,1690,1694,1698,1702,1706,1710,1714,1718,1722,1726,1730,1734,1738,1742,1746,1750,1754,1758,1762,1766,1770,1774,1778,1782,1786,1790,1794,1798,1802,1806,1810,1814,1818,1822,1826,1830,1833,1837,1841,1845,1849,1853,1857,1861,1865,1869,1873,1877,1881,1885,1889,1893,1897,1901,1905,1909,1913,1917,1921,1925,1929,1933,1937,1941,1945,1949,1953,1957,1961,1965,1969,1973,1977,1981,1984,1988,1992,1996,2000,2004,2008,2012,2016,2020,2024,2028,2032,2036,2040,2044,2048,2052,2056,2060,2064,2068,2072,2076,2080,2084,2088,2092,2096,2100,2104,2108,2112,2116,2120,2124,2128,2132,2135,2139,2142,2146,2150,2154,2158,2161,2164,2168,2172,2176,2180,2184,2188,2192,2196,2200,2204,2208,2212,2216,2219,2223,2227,2231,2235,2239,2243,2247,2251,2254,2258,2261,2265,2269,2273,2276,2280,2284,2288,2292,2296,2300,2304,2308,2312,2316,2320,2324,2328,2332,2335,2339,2343,2347,2351,2355,2359,2363,2367,2371,2375,2378,2382,2386,2390,2394,2398,2402,2406,2410,2414,2417,2421,2425,2429,2433,2437,2441,2445,2449,2453,2457,2461,2465,2469,2473,2477,2481,2485,2489,2493,2497,2501,2505,2509,2513,2517,2521,2525,2529],{"id":26,"text":1336,"url":26,"identifiers":1337},"Kim, N.S., Austin, T., Blaauw, D., Mudge, T., Hu, J.S., Irwin, M.J., Kandemir, M., Narayanan, V., et al.: Leakage current: Moore’s law meets static power. Computer 36(12), 68–75 (2003). https:\u002F\u002Fdoi.org\u002F10.1109\u002FMC.2003.1250885",{"doi":1338},"10.1109\u002FMC.2003.1250885",{"id":26,"text":1340,"url":26,"identifiers":1341},"Gariglio, S.: Electric control of a spin current has potential for low-power computing. Nature 580, 458–459 (2020). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fd41586-020-01099-w",{"doi":1342},"10.1038\u002Fd41586-020-01099-w",{"id":26,"text":1344,"url":26,"identifiers":1345},"Transistor count - Wikipedia, [Online; accessed Jul 2020] (Jun 2020). https:\u002F\u002Fen.wikipedia.org\u002Fw\u002Findex.php?title=Transistor_count&oldid=964176266",{},{"id":26,"text":1347,"url":26,"identifiers":1348},"Waldrop, M.M.: The chips are down for Moore’s law. Nat. News 530, 144 (2016). https:\u002F\u002Fdoi.org\u002F10.1038\u002F530144a",{"doi":1349},"10.1038\u002F530144a",{"id":26,"text":1351,"url":26,"identifiers":1352},"Lin, X., Yang, W., Wang, K.L., Zhao, W.: Two-dimensional spintronics for low-power electronics. Nat. Electron. 2(7), 274–283 (2019). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41928-019-0273-7",{"doi":1353},"10.1038\u002Fs41928-019-0273-7",{"id":26,"text":1355,"url":26,"identifiers":1356},"Liu, W., Wong, P.K.J., Xu, Y.: Hybrid spintronic materials: growth, structure and properties. Prog. Mater. Sci. 99, 27–105 (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.pmatsci.2018.08.001",{"doi":1357},"10.1016\u002Fj.pmatsci.2018.08.001",{"id":26,"text":1359,"url":26,"identifiers":1360},"Joshi, V.K.: Spintronics: a contemporary review of emerging electronics devices. Eng. Sci. Technol. 19(3), 1503–1513 (2016). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jestch.2016.05.002",{"doi":1361},"10.1016\u002Fj.jestch.2016.05.002",{"id":26,"text":1363,"url":26,"identifiers":1364},"Hanyu, T., Endoh, T., Suzuki, D., Koike, H., Ma, Y., Onizawa, N., Natsui, M., Ikeda, S., Ohno, H.: Standby-power-free integrated circuits using MTJ-based VLSI computing. Proc. IEEE 104(10), 1844–1863 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPROC.2016.2574939",{"doi":1365},"10.1109\u002FJPROC.2016.2574939",{"id":26,"text":1367,"url":26,"identifiers":1368},"Hu, Z., Buyuktosunoglu, A., Srinivasan, V., Zyuban, V., Jacobson, H., Bose, P.: Microarchitectural techniques for power gating of execution units. In: Proceedings of the 2004 International Symposium on Low Power Electronics and Design, pp. 32–37 (2020). https:\u002F\u002Fdoi.org\u002F10.1145\u002F1013235.1013249",{"doi":1369},"10.1145\u002F1013235.1013249",{"id":26,"text":1371,"url":26,"identifiers":1372},"Lungu, A., Bose, P., Buyuktosunoglu, A., Sorin, D.J.: Dynamic power gating with quality guarantees. In: Proceedings of the 2009 ACM\u002FIEEE International Symposium on Low Power Electronics and Design, pp. 377–382 (2020). https:\u002F\u002Fdoi.org\u002F10.1145\u002F1594233.1594331",{"doi":1373},"10.1145\u002F1594233.1594331",{"id":26,"text":1375,"url":26,"identifiers":1376},"Suri, M.: Applications of Emerging Memory Technology - Beyond Storage $$\\vert$$ Manan Suri $$\\vert$$ Springer, Springer Singapore (2020)",{"doi":1377},"10.1007\u002F978-981-13-8379-3",{"id":26,"text":1379,"url":26,"identifiers":1380},"Hisamoto, D., Lee, W.-C., Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., King, T.-J., Bokor, J., Hu, C.: FinFET-a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron Dev. 47(12), 2320–2325 (2000). https:\u002F\u002Fdoi.org\u002F10.1109\u002F16.887014",{"doi":1381},"10.1109\u002F16.887014",{"id":26,"text":1383,"url":26,"identifiers":1384},"Bohr, M.: The new era of scaling in an SoC world. IEEE (2009). https:\u002F\u002Fdoi.org\u002F10.1109\u002FISSCC.2009.4977293",{"doi":1385},"10.1109\u002FISSCC.2009.4977293",{"id":26,"text":1387,"url":26,"identifiers":1388},"Lin, S., Kim, Y.-B., Lombardi, F.: A novel CNTFET-based ternary logic gate design. In: 2009 52nd IEEE International Midwest Symposium on Circuits and Systems, pp. 435–438 (2009) https:\u002F\u002Fdoi.org\u002F10.1109\u002FMWSCAS.2009.5236063",{"doi":1389},"10.1109\u002FMWSCAS.2009.5236063",{"id":26,"text":1391,"url":26,"identifiers":1392},"Zhang, J., Bobba, S., Patil, N., Lin, A., Wong, H.-S. P., De Micheli, G., Mitra, S.: Carbon nanotube correlation: promising opportunity for CNFET circuit yield enhancement. In: Proceedings of the 47th Design Automation Conference, pp. 889–892 (2020). https:\u002F\u002Fdoi.org\u002F10.1145\u002F1837274.1837497",{"doi":1393},"10.1145\u002F1837274.1837497",{"id":26,"text":1395,"url":26,"identifiers":1396},"Yakout, S.M.: Spintronics: future technology for new data storage and communication devices. J. Supercond. Novel Magn. (2020). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs10948-020-05545-8",{"doi":1397},"10.1007\u002Fs10948-020-05545-8",{"id":26,"text":1399,"url":26,"identifiers":1400},"Chang, C.-Y.: The highlights in the nano world. Proc. IEEE 91(11), 1756–1764 (2003). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPROC.2003.818337",{"doi":1401},"10.1109\u002FJPROC.2003.818337",{"id":26,"text":1403,"url":26,"identifiers":1404},"IEEE International Roadmap for Devices and Systems™ [Online; accessed 19 June 2020] (2020). https:\u002F\u002Firds.ieee.org",{},{"id":26,"text":1406,"url":26,"identifiers":1407},"Dieny, B., Prejbeanu, I.L., Garello, K., Gambardella, P., Freitas, P., Lehndorff, R., Raberg, W., Ebels, U., Demokritov, S.O., Akerman, J., Deac, A., Pirro, P., Adelmann, C., Anane, A., Chumak, A.V., Hirohata, A., Mangin, S., Valenzuela, S.O., Onbaşlı, M.C., D’Aquino, M., Prenat, G., Finocchio, G., Lopez-Diaz, L., Chantrell, R., Chubykalo-Fesenko, O., Bortolotti, P.: Opportunities and challenges for spintronics in the microelectronics industry. Nat. Electron. 3, 446–459 (2020). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41928-020-0461-5",{"doi":1408},"10.1038\u002Fs41928-020-0461-5",{"id":26,"text":1410,"url":26,"identifiers":1411},"Puebla, J., Kim, J., Kondou, K., Otani, Y.: Spintronic devices for energy-efficient data storage and energy harvesting. Commun. Mater. 1(24), 1–9 (2020). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs43246-020-0022-5",{"doi":1412},"10.1038\u002Fs43246-020-0022-5",{"id":26,"text":1414,"url":26,"identifiers":1415},"Vedmedenko, E.Y., Kawakami, R.K., Sheka, D.D., Gambardella, P., Kirilyuk, A., Hirohata, A., Binek, C., Chubykalo-Fesenko, O., Sanvito, S., Kirby, B.J., Grollier, J., Everschor-Sitte, K., Kampfrath, T., You, C.-Y., Berger, A.: The 2020 magnetism roadmap. J. Phys. D Appl. Phys. 53(45), 453001 (2020). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1361-6463\u002Fab9d98",{"doi":1416},"10.1088\u002F1361-6463\u002Fab9d98",{"id":26,"text":1418,"url":26,"identifiers":1419},"Joshi, V.K., Barla, P., Bhat, S., Kaushik, B.K.: From MTJ device to hybrid CMOS\u002FMTJ circuits: a review. IEEE Access 8, 194105–194146 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FACCESS.2020.3033023",{"doi":1420},"10.1109\u002FACCESS.2020.3033023",{"id":26,"text":1422,"url":26,"identifiers":1423},"Tsang, C., Fontana, R.E., Lin, T., Heim, D.E., Speriosu, V.S., Gurney, B.A., Williams, M.L.: Design, fabrication and testing of spin-valve read heads for high density recording. IEEE Trans. Magn. 30(6), 3801–3806 (1994). https:\u002F\u002Fdoi.org\u002F10.1109\u002F20.333909",{"doi":1424},"10.1109\u002F20.333909",{"id":26,"text":1426,"url":26,"identifiers":1427},"Bandyopadhyay, S., Cahay, M.: Introduction to Spintronics. CRC Press, Boca Raton (2015)",{"doi":1428},"10.1201\u002Fb19103",{"id":26,"text":1430,"url":26,"identifiers":1431},"Zhao, W., Prenat, G.: Spintronics-Based Computing. Springer International Publishing, Berlin (2015). https:\u002F\u002Fdoi.org\u002F10.1007\u002F978-3-319-15180-9",{"doi":1432},"10.1007\u002F978-3-319-15180-9",{"id":26,"text":1434,"url":26,"identifiers":1435},"Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., von Molnár, S., Roukes, M.L., Chtchelkanova, A.Y., Treger, D.M.: Spintronics: a spin-based electronics vision for the future. Science 294(5546), 1488–1495 (2001). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1065389",{"doi":1436},"10.1126\u002Fscience.1065389",{"id":26,"text":1438,"url":26,"identifiers":1439},"Chappert, C., Fert, A., Van Dau, F.N.: The emergence of spin electronics in data storage. Nat. Mater. 6(11), 813–823 (2007). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat2024",{"doi":1440},"10.1038\u002Fnmat2024",{"id":26,"text":1442,"url":26,"identifiers":1443},"Žutić, I., Fabian, J., Das Sarma, S.: Spintronics: fundamentals and applications. Rev. Mod. Phys. 76(2), 323–410 (2004). https:\u002F\u002Fdoi.org\u002F10.1103\u002FRevModPhys.76.323",{"doi":1444},"10.1103\u002FRevModPhys.76.323",{"id":26,"text":1446,"url":26,"identifiers":1447},"Endoh, T., Koike, H., Ikeda, S., Hanyu, T., Ohno, H.: An overview of nonvolatile emerging memories— spintronics for working memories. IEEE J. Emerging Sel. Top. Circuits Syst. 6(2), 109–119 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJETCAS.2016.2547704",{"doi":1448},"10.1109\u002FJETCAS.2016.2547704",{"id":26,"text":1450,"url":26,"identifiers":1451},"Liu, E.: Materials and designs of magnetic tunnel junctions with perpendicular magnetic anisotropy for high-density memory applications. Ph.D. thesis, Katholieke Universiteit Leuven, Belgium (2018)",{},{"id":26,"text":1453,"url":26,"identifiers":1454},"Wolf, S.A., Lu, J., Stan, M.R., Chen, E., Treger, D.M.: The promise of nanomagnetics and spintronics for future logic and universal memory. Proc. IEEE 98(12), 2155–2168 (2010). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPROC.2010.2064150",{"doi":1455},"10.1109\u002FJPROC.2010.2064150",{"id":26,"text":1457,"url":26,"identifiers":1458},"Tudu, B., Tiwari, A.: Recent developments in perpendicular magnetic anisotropy thin films for data storage applications. Vacuum 146, 329–341 (2017). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.vacuum.2017.01.031",{"doi":1459},"10.1016\u002Fj.vacuum.2017.01.031",{"id":26,"text":1461,"url":26,"identifiers":1462},"Bläsing, R., Khan, A.A., Filippou, PCh., Garg, C., Hameed, F., Castrillon, J., Parkin, S.S.P.: Magnetic racetrack memory: from physics to the cusp of applications within a decade. In: Proceedings of IEEE, pp. 1–19 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPROC.2020.2975719",{"doi":1463},"10.1109\u002FJPROC.2020.2975719",{"id":26,"text":1465,"url":26,"identifiers":1466},"Khan, A.A., Hameed, F., Bläsing, R., Parkin, S.S.P., Castrillon, J.: ShiftsReduce: minimizing shifts in racetrack memory 4.0. ACM Trans. Archit. Code Optim. 16(4), 1–23 (2019). https:\u002F\u002Fdoi.org\u002F10.1145\u002F3372489",{"doi":1467},"10.1145\u002F3372489",{"id":26,"text":1469,"url":26,"identifiers":1470},"Heidecker, J.: MRAM Technology Status",{},{"id":26,"text":1472,"url":26,"identifiers":1473},"Kryder, M.H., Kim, C.S.: After hard drives—what comes next? IEEE Trans. Magn. 45(10), 3406–3413 (2009). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2009.2024163",{"doi":1474},"10.1109\u002FTMAG.2009.2024163",{"id":26,"text":1476,"url":26,"identifiers":1477},"Kim, J., Paul, A., Crowell, P.A., Koester, S.J., Sapatnekar, S.S., Wang, J.-P., Kim, C.H.: Spin-based computing: device concepts, current status, and a case study on a high-performance microprocessor. Proc. IEEE 103(1), 106–130 (2014). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPROC.2014.2361767",{"doi":1478},"10.1109\u002FJPROC.2014.2361767",{"id":26,"text":1480,"url":26,"identifiers":1481},"Matsunaga, S., Hayakawa, J., Ikeda, S., Miura, K., Endoh, T., Ohno, H., Hanyu, T.: MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues. In: Proceedings of Design, Automation & Test in Europe Conference, pp. 433–435 (2009). https:\u002F\u002Fdoi.org\u002F10.1109\u002FDATE.2009.5090704",{"doi":1482},"10.1109\u002FDATE.2009.5090704",{"id":26,"text":1484,"url":26,"identifiers":1485},"Deng, E., Zhang, Y., Klein, J.-O., Ravelsona, D., Chappert, C., Zhao, W.: Low power magnetic full-adder based on spin transfer torque MRAM. IEEE Trans. Magn. 49(9), 4982–4987 (2013). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2013.2245911",{"doi":1486},"10.1109\u002FTMAG.2013.2245911",{"id":26,"text":1488,"url":26,"identifiers":1489},"Kang, W., Deng, E., Wang, Z., Zhao, W.: Spintronic logic-in-memory paradigms and implementations. In: Suri, M. (eds.) Applications of Emerging Memory Technology. Springer Series in Advanced Microelectronics, vol. 63, pp. 215–229 (2020). https:\u002F\u002Fdoi.org\u002F10.1007\u002F978-981-13-8379-3-9",{"doi":1490},"10.1007\u002F978-981-13-8379-3-9",{"id":26,"text":1492,"url":26,"identifiers":1493},"Barla, P., Joshi, V.K., Bhat, S.: A novel low power and reduced transistor count magnetic arithmetic logic unit using hybrid STT-MTJ\u002FCMOS circuit. IEEE Access 8, 6876–6889 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FACCESS.2019.2963727",{"doi":1494},"10.1109\u002FACCESS.2019.2963727",{"id":26,"text":1496,"url":26,"identifiers":1497},"Barla, P., Shet, D., Joshi, V. K., Bhat, S.: Design and analysis of lim hybrid mtj\u002Fcmos logic gates. In: 2020 5th International Conference on Devices, Circuits and Systems (ICDCS), pp. 41–45 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FICDCS48716.2020.243544",{"doi":1498},"10.1109\u002FICDCS48716.2020.243544",{"id":26,"text":1500,"url":26,"identifiers":1501},"Souri, S.J., Banerjee, K., Mehrotra, A., Saraswat, K.C.: Multiple Si layer ICs: motivation, performance analysis, and design implications. In: Proceedings of 37th ACM Design Automation Conference, ACM, pp. 213–220 (2000). https:\u002F\u002Fdoi.org\u002F10.1145\u002F337292.337394",{"doi":1502},"10.1145\u002F337292.337394",{"id":26,"text":1504,"url":26,"identifiers":1505},"Deng, Y.S., Maly, W.: 2.5D system integration: a design driven system implementation schema. In: ASP-DAC 2004: Proceedings of Asia and South Pacific Design Automation Conference. IEEE Press, pp. 450–455 (2004). https:\u002F\u002Fdoi.org\u002F10.1109\u002FASPDAC.2004.1337617",{"doi":1506},"10.1109\u002FASPDAC.2004.1337617",{"id":26,"text":1508,"url":26,"identifiers":1509},"Tehrani, S., Slaughter, J.M., Chen, E., Durlam, M., Shi, J., DeHerren, M.: Progress and outlook for MRAM technology. IEEE Trans. Magn. 35(5), 2814–2819 (1999). https:\u002F\u002Fdoi.org\u002F10.1109\u002F20.800991",{"doi":1510},"10.1109\u002F20.800991",{"id":26,"text":1512,"url":26,"identifiers":1513},"Verma, S., Kulkarni, A.A., Kaushik, B.K.: Spintronics-based devices to circuits: perspectives and challenges. IEEE Nanatechnol. Mag. 10(4), 13–28 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FMNANO.2016.2606683",{"doi":1514},"10.1109\u002FMNANO.2016.2606683",{"id":26,"text":1516,"url":26,"identifiers":1517},"Zhang, Y.: Compact modeling and hybrid circuit design for spintronic devices based on current-induced switching. Ph.D. thesis, Universite Paris Sud-Paris (2014)",{},{"id":26,"text":1519,"url":26,"identifiers":1520},"Deng, E.: Design and development of low-power and reliable logic circuits based on spin-transfer torque magnetic tunnel junctions. Ph.D. thesis, Université Grenoble Alpes (France) (2017)",{},{"id":26,"text":1522,"url":26,"identifiers":1523},"Datta, A., Nathasingh, D., Martis, R.J., Flanders, P.J., Graham, C.D.: Saturation and engineering magnetostriction of an iron-base amorphous alloy for power applications. J. Appl. Phys. 55(6), 1784–1786 (1984). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.333477",{"doi":1524},"10.1063\u002F1.333477",{"id":26,"text":1526,"url":26,"identifiers":1527},"Klokholm, E.: The measurement of magnetostriction in ferromagnetic thin films. IEEE Trans. Magn. 12(6), 819–821 (1976). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.1976.1059251",{"doi":1528},"10.1109\u002FTMAG.1976.1059251",{"id":26,"text":1530,"url":26,"identifiers":1531},"Camara, I.S., Duquesne, J.-Y., Lemaître, A., Gourdon, C., Thevenard, L.: Field-free magnetization switching by an acoustic wave. Phys. Rev. Appl. 11(1), 014045 (2019). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevApplied.11.014045",{"doi":1532},"10.1103\u002FPhysRevApplied.11.014045",{"id":26,"text":1534,"url":26,"identifiers":1535},"Thevenard, L., Camara, I.S., Majrab, S., Bernard, M., Rovillain, P., Lemaître, A., Gourdon, C., Duquesne, J.-Y.: Precessional magnetization switching by a surface acoustic wave. Phys. Rev. B 93(13), 134430 (2016). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.93.134430",{"doi":1536},"10.1103\u002FPhysRevB.93.134430",{"id":26,"text":1538,"url":26,"identifiers":1539},"Kuszewski, P., Camara, I.S., Biarrotte, N., Becerra, L., von Bardeleben, J., Torres, W.S., Lemaître, A., Gourdon, C., Duquesne, J.-Y., Thevenard, L.: Resonant magneto-acoustic switching: influence of Rayleigh wave frequency and wavevector. J. Phys. Condens. Matter 30(24), 244003 (2018). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1361-648X\u002Faac152",{"doi":1540},"10.1088\u002F1361-648X\u002Faac152",{"id":26,"text":1542,"url":26,"identifiers":1543},"Liu, J., Zhang, Y., Li, C., Jin, W., Lefkidis, G., Hübner, W.: Magneto-straintronics on a co-coordinating metalloboronfullerene. Phys. Rev. B 102(2), 024416 (2020). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.102.024416",{"doi":1544},"10.1103\u002FPhysRevB.102.024416",{"id":26,"text":1546,"url":26,"identifiers":1547},"Jaris, M., Yang, W., Berk, C., Schmidt, H.: Towards ultraefficient nanoscale straintronic microwave devices. Phys. Rev. B 101(21), 214421 (2020). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.101.214421",{"doi":1548},"10.1103\u002FPhysRevB.101.214421",{"id":26,"text":1550,"url":26,"identifiers":1551},"Chen, Y., Song, M., Wei, B., Yang, X., Cui, H., Liu, J., Li, C.: Effect of nanomagnet geometry on reliability of energy-efficient straintronic spin neuron and memory: a size-dependent study. IEEE Magn. Lett. 11, 1–5 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLMAG.2020.3017180",{"doi":1552},"10.1109\u002FLMAG.2020.3017180",{"id":26,"text":1554,"url":26,"identifiers":1555},"Cui, J., Hockel, J.L., Nordeen, P.K., Pisani, D.M., Liang, C.-Y., Carman, G.P., Lynch, C.S.: A method to control magnetism in individual strain-mediated magnetoelectric islands. Appl. Phys. Lett. 103(23), 232905 (2013). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4838216",{"doi":1556},"10.1063\u002F1.4838216",{"id":26,"text":1558,"url":26,"identifiers":1559},"D’Souza, N., Salehi Fashami, M., Bandyopadhyay, S., Atulasimha, J.: Experimental clocking of nanomagnets with strain for ultralow power boolean logic. Nano Lett. 16(2), 1069–1075 (2016). https:\u002F\u002Fdoi.org\u002F10.1021\u002Facs.nanolett.5b04205",{"doi":1560},"10.1021\u002Facs.nanolett.5b04205",{"id":26,"text":1562,"url":26,"identifiers":1563},"Biswas, A.K., Atulasimha, J., Bandyopadhyay, S.: The straintronic spin-neuron. Nanotechnology 26(28), 285201 (2015). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0957-4484\u002F26\u002F28\u002F285201",{"doi":1564},"10.1088\u002F0957-4484\u002F26\u002F28\u002F285201",{"id":26,"text":1566,"url":26,"identifiers":1567},"Roy, K., Bandyopadhyay, S., Atulasimha, J.: Hybrid spintronics and straintronics: a magnetic technology for ultra low energy computing and signal processing. Appl. Phys. Lett. 99(6), 063108 (2011). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3624900",{"doi":1568},"10.1063\u002F1.3624900",{"id":26,"text":1570,"url":26,"identifiers":1571},"Winters, D., Abeed, M.A., Sahoo, S., Barman, A., Bandyopadhyay, S.: Reliability of magnetoelastic switching of nonideal nanomagnets with defects: a case study for the viability of straintronic logic and memory. Phys. Rev. Appl. 12(3), 034010 (2019). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevApplied.12.034010",{"doi":1572},"10.1103\u002FPhysRevApplied.12.034010",{"id":26,"text":1574,"url":26,"identifiers":1575},"Maurice, D.P.A., Howard, F.R.: The quantum theory of the electron. Proc. R. Soc. Lond. A 117, 610–624 (1928). https:\u002F\u002Fdoi.org\u002F10.1098\u002Frspa.1928.0023",{"doi":1576},"10.1098\u002Frspa.1928.0023",{"id":26,"text":1578,"url":26,"identifiers":1579},"Roup, R.R., Kilby, J.S.: Electrical circuit elements. US Patent 2,841,508 (1958)",{},{"id":26,"text":1581,"url":26,"identifiers":1582},"Kilby, J.S.: Invention of the integrated circuit. IEEE Trans. Electron Devices 23(7), 648–654 (1976). https:\u002F\u002Fdoi.org\u002F10.1109\u002FT-ED.1976.18467",{"doi":1583},"10.1109\u002FT-ED.1976.18467",{"id":26,"text":1585,"url":26,"identifiers":1586},"Baibich, M.N., Broto, J.M., Fert, A., Van Dau, F.N., Petroff, F., Etienne, P., Creuzet, G., Friederich, A., Chazelas, J.: Giant magnetoresistance of (001)Fe\u002F(001)Cr magnetic superlattices. Phys. Rev. Lett. 61(21), 2472–2475 (1988). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.61.2472",{"doi":1587},"10.1103\u002FPhysRevLett.61.2472",{"id":26,"text":1589,"url":26,"identifiers":1590},"Binasch, G., Grünberg, P., Saurenbach, F., Zinn, W.: Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. Phys. Rev. B 39, 4828–4830 (1989). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.39.4828",{"doi":1591},"10.1103\u002FPhysRevB.39.4828",{"id":26,"text":1593,"url":26,"identifiers":1594},"Datta, S., Das, B.: Electronic analog of the electro-optic modulator. Appl. Phys. Lett. 56(7), 665–667 (1990). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.102730",{"doi":1595},"10.1063\u002F1.102730",{"id":26,"text":1597,"url":26,"identifiers":1598},"Shinjo, T.: Nanomagnetism and Spintronics. Elsevier, Amsterdam (2013)",{},{"id":26,"text":1600,"url":26,"identifiers":1601},"Reig, C., Cubells-Beltrán, M.-D., Ramírez Muñoz, D.: Magnetic field sensors based on giant magnetoresistance (GMR) technology: applications in electrical current sensing. Sensors 9(10), 7919–7942 (2009). https:\u002F\u002Fdoi.org\u002F10.3390\u002Fs91007919",{"doi":1602},"10.3390\u002Fs91007919",{"id":26,"text":1604,"url":26,"identifiers":1605},"Dieny, B., Speriosu, V.S., Parkin, S.S.P., Gurney, B.A., Wilhoit, D.R., Mauri, D.: Giant magnetoresistive in soft ferromagnetic multilayers. Phys. Rev. B 43(1), 1297–1300(R) (1991). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.43.1297",{"doi":1606},"10.1103\u002FPhysRevB.43.1297",{"id":26,"text":1608,"url":26,"identifiers":1609},"Coughlin, T.: 80 TB Hard Disk Drives, Forbes. https:\u002F\u002Fwww.forbes.com\u002Fsites\u002Ftomcoughlin\u002F2020\u002F02\u002F12\u002F80-tb-hard-disk-drives\u002F#1dbf0bc348f7",{},{"id":26,"text":1611,"url":26,"identifiers":1612},"Fong, X., Kim, Y., Yogendra, K., Fan, D., Sengupta, A., Raghunathan, A., Roy, K.: Spin-transfer torque devices for logic and memory: prospects and perspectives. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 35(1), 1–22 (2015). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTCAD.2015.2481793",{"doi":1613},"10.1109\u002FTCAD.2015.2481793",{"id":26,"text":1615,"url":26,"identifiers":1616},"Ji, Y., Hoffmann, A., Jiang, J.S., Bader, S.D.: Spin injection, diffusion, and detection in lateral spin-valves. Appl. Phys. Lett. 85(25), 6218–6220 (2004). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.1841455",{"doi":1617},"10.1063\u002F1.1841455",{"id":26,"text":1619,"url":26,"identifiers":1620},"Fukuma, Y., Wang, L., Idzuchi, H., Takahashi, S., Maekawa, S., Otani, Y.: Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves. Nat. Mater. 10(7), 527–531 (2011). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat3046",{"doi":1621},"10.1038\u002Fnmat3046",{"id":26,"text":1623,"url":26,"identifiers":1624},"Feng, Y.P., Shen, L., Yang, M., Wang, A., Zeng, M., Wu, Q., Chintalapati, S., Chang, C.-R.: Prospects of spintronics based on 2D materials. WIREs Comput. Mol. Sci. 7(5), e1313 (2017). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fwcms.1313",{"doi":1625},"10.1002\u002Fwcms.1313",{"id":26,"text":1627,"url":26,"identifiers":1628},"Hirohata, A., Yamada, K., Nakatani, Y., Prejbeanu, I.-L., Diény, B., Pirro, P., Hillebrands, B.: Review on spintronics: principles and device applications. J. Magn. Magn. Mater. 509, 166711 (2020). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jmmm.2020.166711",{"doi":1629},"10.1016\u002Fj.jmmm.2020.166711",{"id":26,"text":1631,"url":26,"identifiers":1632},"Samm, J., Gramich, J., Baumgartner, A., Weiss, M., Schönenberger, C.: Optimized fabrication and characterization of carbon nanotube spin valves. J. Appl. Phys. 115(17), 174309 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4874919",{"doi":1633},"10.1063\u002F1.4874919",{"id":26,"text":1635,"url":26,"identifiers":1636},"Aurich, H., Baumgartner, A., Freitag, F., Eichler, A., Trbovic, J., Schönenberger, C.: Permalloy-based carbon nanotube spin-valve. Appl. Phys. Lett. 97(15), 153116 (2010). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3502600",{"doi":1637},"10.1063\u002F1.3502600",{"id":26,"text":1639,"url":26,"identifiers":1640},"Kimura, T., Sato, T., Otani, Y.: Temperature evolution of spin relaxation in a NiFe\u002FCu lateral spin valve. Phys. Rev. Lett. 100(6), 066602 (2008). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.100.066602",{"doi":1641},"10.1103\u002FPhysRevLett.100.066602",{"id":26,"text":1643,"url":26,"identifiers":1644},"Sasaki, T., Suzuki, T., Ando, Y., Koike, H., Oikawa, T., Suzuki, Y., Shiraishi, M.: Local magnetoresistance in Fe\u002FMgO\u002FSi lateral spin valve at room temperature. Appl. Phys. Lett. 104(5), 052404 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4863818",{"doi":1645},"10.1063\u002F1.4863818",{"id":26,"text":1647,"url":26,"identifiers":1648},"Julliere, M.: Tunneling between ferromagnetic films. Phys. Lett. A 54(3), 225–226 (1975)",{"doi":1649},"10.1016\u002F0375-9601(75)90174-7",{"id":26,"text":1651,"url":26,"identifiers":1652},"Moodera, J.S., Kinder, L.R., Wong, T.M., Meservey, R.: Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Phys. Rev. Lett. 74(16), 3273–3276 (1995). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.74.3273",{"doi":1653},"10.1103\u002FPhysRevLett.74.3273",{"id":26,"text":1655,"url":26,"identifiers":1656},"Miyazaki, T., Tezuka, N.: Giant magnetic tunneling effect in Fe\u002FAl2O3\u002FFe junction. J. Magn. Magn. Mater. 139(3), L231–L234 (1995). https:\u002F\u002Fdoi.org\u002F10.1016\u002F0304-8853(95)90001-2",{"doi":1657},"10.1016\u002F0304-8853(95)90001-2",{"id":26,"text":1659,"url":26,"identifiers":1660},"Wang, D., Nordman, C., Daughton, J.M., Qian, Z., Fink, J.: 70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers. IEEE Trans. Magn. 40(4), 2269–2271 (2004). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2004.830219",{"doi":1661},"10.1109\u002FTMAG.2004.830219",{"id":26,"text":1663,"url":26,"identifiers":1664},"Yuasa, S., Nagahama, T., Fukushima, A., Suzuki, Y., Ando, K.: Giant room-temperature magnetoresistance in single-crystal Fe\u002FMgO\u002FFe magnetic tunnel junctions. Nat. Mater. 3(12), 868–871 (2004). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat1257",{"doi":1665},"10.1038\u002Fnmat1257",{"id":26,"text":1667,"url":26,"identifiers":1668},"Ikeda, S., Hayakawa, J., Ashizawa, Y., Lee, Y. M., Miura, K., Hasegawa, H., Tsunoda, M., Matsukura, F., Ohno, H.: Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB\u002FMgO\u002FCoFeB pseudo-spin-valves annealed at high temperature. Appl. Phys. Lett. 93(8), 082508–1–082508–3. (2008). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.2976435",{"doi":1669},"10.1063\u002F1.2976435",{"id":26,"text":1671,"url":26,"identifiers":1672},"Hirohata, A., Sukegawa, H., Yanagihara, H., Žutić, I., Seki, T., Mizukami, S., Swaminathan, R.: Roadmap for emerging materials for spintronic device applications. IEEE Trans. Magn. 51(10), 1–11 (2015). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2015.2457393",{"doi":1673},"10.1109\u002FTMAG.2015.2457393",{"id":26,"text":1675,"url":26,"identifiers":1676},"Zheng, C., Zhu, K., de Freitas, S.C., Chang, J.-Y., Davies, J.E., Eames, P., Freitas, P.P., Kazakova, O., Kim, C., Leung, C.-W., Liou, S.-H., Ognev, A., Piramanayagam, S.N., Ripka, P., Samardak, A., Shin, K.-H., Tong, S.-Y., Tung, M.-J., Wang, S.X., Xue, S., Yin, X., Pong, P.W.T.: Magnetoresistive sensor development roadmap (non-recording applications). IEEE Trans. Magn. 55(4), 1–30 (2019). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2019.2896036",{"doi":1677},"10.1109\u002FTMAG.2019.2896036",{"id":26,"text":1679,"url":26,"identifiers":1680},"Wei, H.X., Qin, Q.H., Ma, M., Sharif, R., Han, X.F.: 80% tunneling magnetoresistance at room temperature for thin Al–O barrier magnetic tunnel junction with CoFeB as free and reference layers. J. Appl. Phys. 101(9), 09B501 (2007). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.2696590",{"doi":1681},"10.1063\u002F1.2696590",{"id":26,"text":1683,"url":26,"identifiers":1684},"Rishton, S.A., Lu, Y., Altman, R.A., Marley, A.C., Bian, X.P., Jahnes, C., Viswanathan, R., Xiao, G., Gallagher, W.J., Parkin, S.S.P.: Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithography. Microelectron. Eng. 35(1), 249–252 (1997). https:\u002F\u002Fdoi.org\u002F10.1016\u002FS0167-9317(96)00107-4",{"doi":1685},"10.1016\u002FS0167-9317(96)00107-4",{"id":26,"text":1687,"url":26,"identifiers":1688},"Han, X.-F., Oogane, M., Kubota, H., Ando, Y., Miyazaki, T.: Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes. Appl. Phys. Lett. 77(2), 283–285 (2000). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.126951",{"doi":1689},"10.1063\u002F1.126951",{"id":26,"text":1691,"url":26,"identifiers":1692},"Parkin, S.S.P., Roche, K.P., Samant, M.G., Rice, P.M., Beyers, R.B., Scheuerlein, R.E., O’Sullivan, E.J., Brown, S.L., Bucchigano, J., Abraham, D.W., Lu, Y., Rooks, M., Trouilloud, P.L., Wanner, R.A., Gallagher, W.J.: Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited). J. Appl. Phys. 85(8), 5828–5833 (1999). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.369932",{"doi":1693},"10.1063\u002F1.369932",{"id":26,"text":1695,"url":26,"identifiers":1696},"Bowen, M., Cros, V., Petroff, F., Fert, A., Martınez Boubeta, C., Costa-Krämer, J.L., Anguita, J.V., Cebollada, A., Briones, F., De Teresa, J., et al.: Large magnetoresistance in Fe\u002FMgO\u002FFeCo(001) epitaxial tunnel junctions on GaAs(001). Appl. Phys. Lett. 79(11), 1655–1657 (2001) https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.1404125",{"doi":1697},"10.1063\u002F1.1404125",{"id":26,"text":1699,"url":26,"identifiers":1700},"Popova, E., Faure-Vincent, J., Tiusan, C., Bellouard, C., Fischer, H., Hehn, M., Montaigne, F., Alnot, M., Andrieu, S., Schuhl, A., Snoeck, E., da Costa, V.: Epitaxial MgO layer for low-resistance and coupling-free magnetic tunnel junctions. Appl. Phys. Lett. 81(6), 1035–1037 (2002). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.1498153",{"doi":1701},"10.1063\u002F1.1498153",{"id":26,"text":1703,"url":26,"identifiers":1704},"Yuasa, S., Fukushima, A., Nagahama, T., Ando, K., Suzuki, Y.: High tunnel magnetoresistance at room temperature in fully epitaxial Fe\u002FMgO\u002FFe tunnel junctions due to coherent spin-polarized tunneling. Jpn. J. Appl. Phys. 43(4B), L588–L590 (2004). https:\u002F\u002Fdoi.org\u002F10.1143\u002Fjjap.43.l588",{"doi":1705},"10.1143\u002Fjjap.43.l588",{"id":26,"text":1707,"url":26,"identifiers":1708},"Yuasa, S., Fukushima, A., Kubota, H., Suzuki, Y., Ando, K.: Giant tunneling magnetoresistance up to 410% at room temperature in fully epitaxial xn-CoMgOCo-df0dd magnetic tunnel junctions with bcc Co(001) electrodes. Appl. Phys. Lett. 89(4), 042505 (2006). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.2236268",{"doi":1709},"10.1063\u002F1.2236268",{"id":26,"text":1711,"url":26,"identifiers":1712},"Parkin, S.S.P., Kaiser, C., Panchula, A., Rice, P.M., Hughes, B., Samant, M., Yang, S.-H.: Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers. Nat. Mater. 3(12), 862–867 (2004). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat1256",{"doi":1713},"10.1038\u002Fnmat1256",{"id":26,"text":1715,"url":26,"identifiers":1716},"Djayaprawira, D.D., Tsunekawa, K., Nagai, M., Maehara, H., Yamagata, S., Watanabe, N., Yuasa, S., Suzuki, Y., Ando, K.: 230% room-temperature magnetoresistance in xn-CoFeBMgOCoFeB-7i2hd magnetic tunnel junctions. Appl. Phys. Lett. 86(9), 092502 (2005). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.1871344",{"doi":1717},"10.1063\u002F1.1871344",{"id":26,"text":1719,"url":26,"identifiers":1720},"Inomata, K., Okamura, S., Goto, R., Tezuka, N.: Large tunneling magnetoresistance at room temperature using a Heusler alloy with the B2 structure. Jpn. J. Appl. Phys. 42(Part 2, No. 4B), L419–L422 (2003). https:\u002F\u002Fdoi.org\u002F10.1143\u002Fjjap.42.l419",{"doi":1721},"10.1143\u002Fjjap.42.l419",{"id":26,"text":1723,"url":26,"identifiers":1724},"Ishikawa, T., Hakamata, S., Matsuda, K.-I., Uemura, T., Yamamoto, M.: Fabrication of fully epitaxial xn-Co2MnSiMgOCo2MnSi-sl0kd magnetic tunnel junctions. J. Appl. Phys. 103(7), 07A919 (2008). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.2843756",{"doi":1725},"10.1063\u002F1.2843756",{"id":26,"text":1727,"url":26,"identifiers":1728},"Kämmerer, S., Thomas, A., Hütten, A., Reiss, G.: Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions. Appl. Phys. Lett. 85(1), 79–81 (2004). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.1769082",{"doi":1729},"10.1063\u002F1.1769082",{"id":26,"text":1731,"url":26,"identifiers":1732},"Marukame, T., Ishikawa, T., Hakamata, S., Matsuda, K.-I., Uemura, T., Yamamoto, M.: Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.xn–4AlMgOCo50Fe50-sj9hd magnetic tunnel junctions with exchange biasing. Appl. Phys. Lett. 90(1), 012508 (2007). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.2428412",{"doi":1733},"10.1063\u002F1.2428412",{"id":26,"text":1735,"url":26,"identifiers":1736},"Sakuraba, Y., Nakata, J., Oogane, M., Kubota, H., Ando, Y., Sakuma, A., Miyazaki, T.: Huge spin-polarization of L21-ordered Co2MnSi epitaxial Heusler alloy film. Jpn. J. Appl. Phys. 44(No. 35), L1100–L1102 (2005). https:\u002F\u002Fdoi.org\u002F10.1143\u002Fjjap.44.l1100",{"doi":1737},"10.1143\u002Fjjap.44.l1100",{"id":26,"text":1739,"url":26,"identifiers":1740},"Tezuka, N., Ikeda, N., Mitsuhashi, F., Sugimoto, S.: Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy. Appl. Phys. Lett. 94(16), 162504 (2009). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3116717",{"doi":1741},"10.1063\u002F1.3116717",{"id":26,"text":1743,"url":26,"identifiers":1744},"Tsunegi, S., Sakuraba, Y., Oogane, M., Takanashi, K., Ando, Y.: Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier. Appl. Phys. Lett. 93(11), 112506 (2008). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.2987516",{"doi":1745},"10.1063\u002F1.2987516",{"id":26,"text":1747,"url":26,"identifiers":1748},"Wang, W., Sukegawa, H., Shan, R., Mitani, S., Inomata, K.: Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl\u002FMgO\u002FCoFe magnetic tunnel junctions. Appl. Phys. Lett. 95(18), 182502 (2009). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3258069",{"doi":1749},"10.1063\u002F1.3258069",{"id":26,"text":1751,"url":26,"identifiers":1752},"Ebke, D., Schmalhorst, J., Liu, N.-N., Thomas, A., Reiss, G., Hütten, A.: Large tunnel magnetoresistance in tunnel junctions with xn-Co2MnSiCo2FeSi-wj9h multilayer electrode. Appl. Phys. Lett. 89(16), 162506 (2006). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.2363939",{"doi":1753},"10.1063\u002F1.2363939",{"id":26,"text":1755,"url":26,"identifiers":1756},"Shan, R., Sukegawa, H., Wang, W.H., Kodzuka, M., Furubayashi, T., Ohkubo, T., Mitani, S.,  Inomata, K., Hono, K.: Demonstration of half-metallicity in fermi-level-tuned Heusler alloy $$\\text{Co}_{2}\\text{ FeAl}_{0.5}\\text{ Si}_{0.5}$$ at room temperature. Phys. Rev. Lett. 102(24), 246601 (2009). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.102.246601",{"doi":1757},"10.1103\u002FPhysRevLett.102.246601",{"id":26,"text":1759,"url":26,"identifiers":1760},"Sukegawa, H., Xiu, H., Ohkubo, T., Furubayashi, T., Niizeki, T., Wang, W., Kasai, S., Mitani, S., Inomata, K., Hono, K.: Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe\u002Fspinel MgAl2O4\u002FFe(001) junctions. Appl. Phys. Lett. 96(21), 212505 (2010). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3441409",{"doi":1761},"10.1063\u002F1.3441409",{"id":26,"text":1763,"url":26,"identifiers":1764},"Sukegawa, H., Mitani, S., Ohkubo, T., Inomata, K., Hono, K.: Low-resistive monocrystalline Mg–Al–O barrier magnetic tunnel junctions for spin-transfer magnetization switching. Appl. Phys. Lett. 103(14), 142409 (2013). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4824134",{"doi":1765},"10.1063\u002F1.4824134",{"id":26,"text":1767,"url":26,"identifiers":1768},"Scheike, T., Sukegawa, H., Furubayashi, T., Wen, Z., Inomata, K., Ohkubo, T., Hono, K., Mitani, S.: Lattice-matched magnetic tunnel junctions using a Heusler alloy Co2FeAl and a cation-disorder spinel Mg–Al–O barrier. Appl. Phys. Lett. 105(24), 242407 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4904716",{"doi":1769},"10.1063\u002F1.4904716",{"id":26,"text":1771,"url":26,"identifiers":1772},"Sukegawa, H., Miura, Y., Muramoto, S., Mitani, S., Niizeki, T., Ohkubo, T., Abe, K., Shirai, M., Inomata, K., Hono, K.: Enhanced tunnel magnetoresistance in a spinel oxide barrier with cation-site disorder. Phys. Rev. B 86(18), 184401 (2012). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.86.184401",{"doi":1773},"10.1103\u002FPhysRevB.86.184401",{"id":26,"text":1775,"url":26,"identifiers":1776},"Scheike, T., Sukegawa, H., Inomata, K., Ohkubo, T., Hono, K., Mitani, S.: Chemical ordering and large tunnel magnetoresistance in Co2FeAl\u002FMgAl2O4\u002FCo2FeAl(001) junctions. Appl. Phys. Express 9(5), 053004 (2016). https:\u002F\u002Fdoi.org\u002F10.7567\u002Fapex.9.053004",{"doi":1777},"10.7567\u002Fapex.9.053004",{"id":26,"text":1779,"url":26,"identifiers":1780},"Johnson, M.T., Bloemen, P.J.H., Broeder, F.J. A. d., de Vries, J.J.: Magnetic anisotropy in metallic multilayers. Rep. Prog. Phys. 59(11), 1409–1458 (1996). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0034-4885\u002F59\u002F11\u002F002",{"doi":1781},"10.1088\u002F0034-4885\u002F59\u002F11\u002F002",{"id":26,"text":1783,"url":26,"identifiers":1784},"Draaisma, H.J.G., de Jonge, W.J.M., Den Broeder, F.J.A.: Magnetic interface anisotropy in Pd\u002FCo and Pd\u002FFe multilayers. J. Magn. Magn. Mater. 66(3), 351–355 (1987). https:\u002F\u002Fdoi.org\u002F10.1016\u002F0304-8853(87)90169-7",{"doi":1785},"10.1016\u002F0304-8853(87)90169-7",{"id":26,"text":1787,"url":26,"identifiers":1788},"Engel, B.N., Akerman, J., Butcher, B., Dave, R.W., DeHerrera, M., Durlam, M., Grynkewich, G., Janesky, J., Pietambaram, S.V., Rizzo, N.D., Slaughter, J.M., Smith, K., Sun, J.J., Tehrani, S.: A 4-Mb toggle MRAM based on a novel bit and switching method. IEEE Trans. Magn. 41(1), 132–136 (2005). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2004.840847",{"doi":1789},"10.1109\u002FTMAG.2004.840847",{"id":26,"text":1791,"url":26,"identifiers":1792},"Prejbeanu, I.L., Kula, W., Ounadjela, K., Sousa, R.C., Redon, O., Dieny, B., Nozieres, J.-P.: Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions. IEEE Trans. Magn. 40(4), 2625–2627 (2004). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2004.830395",{"doi":1793},"10.1109\u002FTMAG.2004.830395",{"id":26,"text":1795,"url":26,"identifiers":1796},"Prejbeanu, I.L., Kerekes, M., Sousa, R.C., Sibuet, H., Redon, O., Dieny, B., Nozières, J.P.: Thermally assisted MRAM. J. Phys. Condens. Matter 19(16), 165218 (2007). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0953-8984\u002F19\u002F16\u002F165218",{"doi":1797},"10.1088\u002F0953-8984\u002F19\u002F16\u002F165218",{"id":26,"text":1799,"url":26,"identifiers":1800},"Prejbeanu, I.L., Bandiera, S., Alvarez-Hérault, J., Sousa, R.C., Dieny, B., Nozières, J.-P.: Thermally assisted MRAMs: ultimate scalability and logic functionalities. J. Phys. D Appl. Phys. 46(7), 074002 (2013). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0022-3727\u002F46\u002F7\u002F074002",{"doi":1801},"10.1088\u002F0022-3727\u002F46\u002F7\u002F074002",{"id":26,"text":1803,"url":26,"identifiers":1804},"Zhao, W., Belhaire, E., Chappert, C., Dieny, B., Prenat, G.: Tas-mram-based low-power high-speed runtime reconfiguration (rtr) fpga. ACM Trans. Reconfig. Technol. Syst. (TRETS) 2(2), 8 (2009)",{"doi":1805},"10.1145\u002F1534916.1534918",{"id":26,"text":1807,"url":26,"identifiers":1808},"Berger, L.: Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev. B 54(13), 9353–9358 (1996). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.54.9353",{"doi":1809},"10.1103\u002FPhysRevB.54.9353",{"id":26,"text":1811,"url":26,"identifiers":1812},"Slonczewski, J.C.: Current-driven excitation of magnetic multilayers. J. Magn. Magn. Mater. 159(1), L1–L7 (1996). https:\u002F\u002Fdoi.org\u002F10.1016\u002F0304-8853(96)00062-5",{"doi":1813},"10.1016\u002F0304-8853(96)00062-5",{"id":26,"text":1815,"url":26,"identifiers":1816},"Huai, Y., Albert, F., Nguyen, P., Pakala, M., Valet, T.: Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions. Appl. Phys. Lett. 84(16), 3118–3120 (2004). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.1707228",{"doi":1817},"10.1063\u002F1.1707228",{"id":26,"text":1819,"url":26,"identifiers":1820},"Bhatti, S., Sbiaa, R., Hirohata, A., Ohno, H., Fukami, S., Piramanayagam, S.N.: Spintronics based random access memory: a review. Mater. Today 20(9), 530–548 (2017). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.mattod.2017.07.007",{"doi":1821},"10.1016\u002Fj.mattod.2017.07.007",{"id":26,"text":1823,"url":26,"identifiers":1824},"Brataas, A., Kent, A.D., Ohno, H.: Current-induced torques in magnetic materials. Nat. Mater. 11(5), 372–381 (2012). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat3311",{"doi":1825},"10.1038\u002Fnmat3311",{"id":26,"text":1827,"url":26,"identifiers":1828},"Sun, J.Z.: Spin-current interaction with a monodomain magnetic body: a model study. Phys. Rev. B 62(1), 570–578 (2000). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.62.570",{"doi":1829},"10.1103\u002FPhysRevB.62.570",{"id":26,"text":1831,"url":26,"identifiers":1832},"Spin-transfer Torque MRAM Products$$\\vert$$Everspin (2020). https:\u002F\u002Fwww.everspin.com\u002Fspin-transfer-torque-mram-products",{},{"id":26,"text":1834,"url":26,"identifiers":1835},"Dieny, B., Chshiev, M.: Perpendicular magnetic anisotropy at transition metal\u002Foxide interfaces and applications. Rev. Mod. Phys. 89(2), 025008 (2017). https:\u002F\u002Fdoi.org\u002F10.1103\u002FRevModPhys.89.025008",{"doi":1836},"10.1103\u002FRevModPhys.89.025008",{"id":26,"text":1838,"url":26,"identifiers":1839},"Jinnai, B., Watanabe, K., Fukami, S., Ohno, H.: Scaling magnetic tunnel junction down to single-digit nanometers—challenges and prospects. Appl. Phys. Lett. 116(16), 160501 (2020). https:\u002F\u002Fdoi.org\u002F10.1063\u002F5.0004434",{"doi":1840},"10.1063\u002F5.0004434",{"id":26,"text":1842,"url":26,"identifiers":1843},"Ikeda, S., Miura, K., Yamamoto, H., Mizunuma, K., Gan, H.D., Endo, M., Kanai, S., Hayakawa, J., Matsukura, F., Ohno, H.: A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction. Nat. Mater. 9(9), 721–724 (2010). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat2804",{"doi":1844},"10.1038\u002Fnmat2804",{"id":26,"text":1846,"url":26,"identifiers":1847},"Song, Y.J., Lee, J.H., Shin, H.C., Lee, K.H., Suh, K., Kang, J.R., Pyo, S.S., Jung, H.T., Hwang, S.H., Koh, G.H., Oh, S.C., Park, S.O., Kim, J.K., Park, J.C., Kim, J., Hwang, K.H., Jeong, G.T., Lee, K.P., Jung, E.S.: Highly functional and reliable 8Mb STT-MRAM embedded in 28 nm logic. In: 2016 IEEE International Electron Devices Meeting (IEDM), pp. 27.2.1–27.2.4 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FIEDM.2016.7838491",{"doi":1848},"10.1109\u002FIEDM.2016.7838491",{"id":26,"text":1850,"url":26,"identifiers":1851},"Chung, S.-W., Kishi, T., Park, J.W., Yoshikawa, M., Park, K.S., Nagase, T., Sunouchi, K.,  Kanaya, H., Kim, G.C., Noma, K., Lee, M.S., Yamamoto, A., Rho, K.M., Tsuchida, K., Chung, S.J., Yi, J.Y., Kim, H.S., Chun, Y.S., Oyamatsu, H., Hong, S.J.: 4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure. In: 2016 IEEE International Electron Devices Meeting (IEDM), pp. 27.1.1–27.1.4 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FIEDM.2016.7838490",{"doi":1852},"10.1109\u002FIEDM.2016.7838490",{"id":26,"text":1854,"url":26,"identifiers":1855},"Lu, Y., Zhong, T., Hsu, W., Kim, S., Lu, X., Kan, J.J., Park, C., Chen, W.C., Li, X., Zhu, X.,  Wang, P., Gottwald, M., Fatehi, J., Seward, L., Kim, J.P., Yu, N., Jan, G., Haq, J., Le, S., Wang, Y.J.,  Thomas, L., Zhu, J., Liu, H., Lee, Y.J., Tong, R.Y., Pi, K., Shen, D., He, R., Teng, Z., Lam, V., Annapragada, R., Torng, T., Wang, P.-K., Kang, S.H.: Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications. In: 2015 IEEE International Electron Devices Meeting (IEDM), pp. 26.1.1–26.1.4 (2015). https:\u002F\u002Fdoi.org\u002F10.1109\u002FIEDM.2015.7409770",{"doi":1856},"10.1109\u002FIEDM.2015.7409770",{"id":26,"text":1858,"url":26,"identifiers":1859},"Yoda, H., Fujita, S., Shimomura, N., Kitagawa, E., Abe, K., Nomura, K., Noguchi, H., Ito, J.: Progress of STT-MRAM technology and the effect on normally-off computing systems. In: 2012 International Electron Devices Meeting, pp. 11.3.1–11.3.4 (2012). https:\u002F\u002Fdoi.org\u002F10.1109\u002FIEDM.2012.6479023",{"doi":1860},"10.1109\u002FIEDM.2012.6479023",{"id":26,"text":1862,"url":26,"identifiers":1863},"Sato, H., Yamanouchi, M., Ikeda, S., Fukami, S., Matsukura, F., Ohno, H.: Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO\u002FCoFeB\u002FTa\u002FCoFeB\u002FMgO recording structure. Appl. Phys. Lett. 101(2), 022414 (2012). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4736727",{"doi":1864},"10.1063\u002F1.4736727",{"id":26,"text":1866,"url":26,"identifiers":1867},"Sato, H., Enobio, E.C.I., Yamanouchi, M., Ikeda, S., Fukami, S., Kanai, S., Matsukura, F., Ohno, H.: Properties of magnetic tunnel junctions with a MgO\u002FCoFeB\u002FTa\u002FCoFeB\u002FMgO recording structure down to junction diameter of 11nm. Appl. Phys. Lett. 105(6), 062403 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4892924",{"doi":1868},"10.1063\u002F1.4892924",{"id":26,"text":1870,"url":26,"identifiers":1871},"Worledge, D.C.: Theory of spin torque switching current for the double magnetic tunnel junction. IEEE Magn. Lett. 8, ArticleSequenceNumber:4306505 (2017). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLMAG.2017.2707331",{"doi":1872},"10.1109\u002FLMAG.2017.2707331",{"id":26,"text":1874,"url":26,"identifiers":1875},"Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B.: Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer. J. Appl. Phys. 117(23), 233901 (2015). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4922630",{"doi":1876},"10.1063\u002F1.4922630",{"id":26,"text":1878,"url":26,"identifiers":1879},"Thomas, L., Jan, G., Zhu, J., Liu, H., Lee, Y.-J., Le, S., Tong, R.-Y., Pi, K., Wang, Y.-J., Shen, D., He, R., Haq, J., Teng, J., Lam, V., Huang, K., Zhong, T., Torng, T., Wang, P.-K.: Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited). J. Appl. Phys. 115(17), 172615 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4870917",{"doi":1880},"10.1063\u002F1.4870917",{"id":26,"text":1882,"url":26,"identifiers":1883},"Sbiaa, R., Law, R., Tan, E.-L., Liew, T.: Spin transfer switching enhancement in perpendicular anisotropy magnetic tunnel junctions with a canted in-plane spin polarizer. J. Appl. Phys. 105(1), 013910 (2009). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3055373",{"doi":1884},"10.1063\u002F1.3055373",{"id":26,"text":1886,"url":26,"identifiers":1887},"You, C.-Y.: Reduced spin transfer torque switching current density with non-collinear polarizer layer magnetization in magnetic multilayer systems. Appl. Phys. Lett. 100(25), 252413 (2012). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4730376",{"doi":1888},"10.1063\u002F1.4730376",{"id":26,"text":1890,"url":26,"identifiers":1891},"Liu, H., Bedau, D., Backes, D., Katine, J.A., Langer, J., Kent, A.D.: Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices. Appl. Phys. Lett. 97(24), 242510 (2010). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3527962",{"doi":1892},"10.1063\u002F1.3527962",{"id":26,"text":1894,"url":26,"identifiers":1895},"Watanabe, K., Jinnai, B., Fukami, S., Sato, H., Ohno, H.: Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions. Nat. Commun. 9(663), 1–6 (2018). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41467-018-03003-7",{"doi":1896},"10.1038\u002Fs41467-018-03003-7",{"id":26,"text":1898,"url":26,"identifiers":1899},"Perrissin, N., Lequeux, S., Strelkov, N., Vila, L., Buda-Prejbeanu, L., Auffret, S., Sousa, R.,  Prejbeanu, I., Dieny, B.: Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy. Nanoscale 10. https:\u002F\u002Fdoi.org\u002F10.1039\u002FC8NR01365A",{"doi":1900},"10.1039\u002FC8NR01365A",{"id":26,"text":1902,"url":26,"identifiers":1903},"Fukami, S., Anekawa, T., Zhang, C., Ohno, H.: A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration. Nat. Nanotechnol. 11(7), 621–625 (2016). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2016.29",{"doi":1904},"10.1038\u002Fnnano.2016.29",{"id":26,"text":1906,"url":26,"identifiers":1907},"Devolder, T., Hayakawa, J., Ito, K., Takahashi, H., Ikeda, S., Crozat, P., Zerounian, N., Kim, J.-V., Chappert, C., Ohno, H.: Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: stochastic versus deterministic aspects. Phys. Rev. Lett. 100(5), 057206 (2008). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.100.057206",{"doi":1908},"10.1103\u002FPhysRevLett.100.057206",{"id":26,"text":1910,"url":26,"identifiers":1911},"Suzuki, D., Natsui, M., Mochizuki, A., Hanyu, T.: Cost-efficient self-terminated write driver for spin-transfer-torque RAM and logic. IEEE Trans. Magn. 50(11), 1–4 (2014). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2014.2322387",{"doi":1912},"10.1109\u002FTMAG.2014.2322387",{"id":26,"text":1914,"url":26,"identifiers":1915},"Bishnoi, R., Ebrahimi, M., Oboril, F., Tahoori, M.B.: Improving write performance for STT-MRAM. IEEE Trans. Magn. 52(8), 1–11 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2016.2541629",{"doi":1916},"10.1109\u002FTMAG.2016.2541629",{"id":26,"text":1918,"url":26,"identifiers":1919},"Bishnoi, R., Oboril, F., Ebrahimi, M., Tahoori, M.B.: Self-timed read and write operations in STT-MRAM. IEEE Trans. Very Large Scale Integr. VLSI Syst. 24(5), 1783–1793 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTVLSI.2015.2496363",{"doi":1920},"10.1109\u002FTVLSI.2015.2496363",{"id":26,"text":1922,"url":26,"identifiers":1923},"Sayed, N., Bishnoi, R., Oboril, F., Tahoori, M.B.: A cross-layer adaptive approach for performance and power optimization in STT-MRAM. IEEE, pp. 791–796 (2018). https:\u002F\u002Fdoi.org\u002F10.23919\u002FDATE.2018.8342114",{"doi":1924},"10.23919\u002FDATE.2018.8342114",{"id":26,"text":1926,"url":26,"identifiers":1927},"Monga, K., Malhotra, A., Chaturvedi, N., Gurunayaranan, S.: A novel low power non-volatile SRAM cell with self write termination. In: 2019 10th International Conference on Computing, Communication and Networking Technologies (ICCCNT), pp. 1–4 (2019). https:\u002F\u002Fdoi.org\u002F10.1109\u002FICCCNT45670.2019.8944846",{"doi":1928},"10.1109\u002FICCCNT45670.2019.8944846",{"id":26,"text":1930,"url":26,"identifiers":1931},"Gupta, M.K., Hasan, M.: Self-terminated write-assist technique for STT-RAM. IEEE Trans. Magn. 52(8), 1–6 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2016.2542785",{"doi":1932},"10.1109\u002FTMAG.2016.2542785",{"id":26,"text":1934,"url":26,"identifiers":1935},"Farkhani, H., Tohidi, M., Peiravi, A., Madsen, J.K., Moradi, F.: STT-RAM energy reduction using self-referenced differential write termination technique. IEEE Trans. Very Large Scale Integr. VLSI Syst. 25(2), 476–487 (2017). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTVLSI.2016.2588585",{"doi":1936},"10.1109\u002FTVLSI.2016.2588585",{"id":26,"text":1938,"url":26,"identifiers":1939},"Bishnoi, R., Ebrahimi, M., Oboril, F., Tahoori, M.B., Termination, asynchronous asymmetrical write, (AAWT) for a low power STT-MRAM. In : Design Automation Test in Europe Conference Exhibition (DATE), vol. 2014, pp. 1–6 (2014). https:\u002F\u002Fdoi.org\u002F10.7873\u002FDATE.2014.193",{"doi":1940},"10.7873\u002FDATE.2014.193",{"id":26,"text":1942,"url":26,"identifiers":1943},"Bishnoi, R., Oboril, F., Ebrahimi, M., Tahoori, M.B.: Avoiding unnecessary write operations in STT-MRAM for low power implementation. IEEE 548–553 (2014). https:\u002F\u002Fdoi.org\u002F10.1109\u002FISQED.2014.6783375",{"doi":1944},"10.1109\u002FISQED.2014.6783375",{"id":26,"text":1946,"url":26,"identifiers":1947},"Zhou, P., Zhao, B., Yang, J., Zhang, Y.: Energy reduction for STT-RAM using early write termination. In: IEEE\u002FACM International Conference on Computer-Aided Design—Digest of Technical Papers, vol. 2009, pp. 264–268 (2009)",{"doi":1948},"10.1145\u002F1687399.1687448",{"id":26,"text":1950,"url":26,"identifiers":1951},"Zhang, D., Zeng, L., Wang, G., Zhang, Y., Zhang, Y., Klein, J.O., Zhao, W.: High-speed, low-power, and error-free asynchronous write circuit for STT-MRAM and logic. IEEE Trans. Magn. 52(8), 1–4 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2016.2539519",{"doi":1952},"10.1109\u002FTMAG.2016.2539519",{"id":26,"text":1954,"url":26,"identifiers":1955},"Lakys, Y., Zhao, W.S., Devolder, T., Zhang, Y., Klein, J.-O., Ravelosona, D., Chappert, C.: Self-enabled “error-free” switching circuit for spin transfer torque MRAM and logic. IEEE Trans. Magn. 48(9), 2403–2406 (2012). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2012.2194790",{"doi":1956},"10.1109\u002FTMAG.2012.2194790",{"id":26,"text":1958,"url":26,"identifiers":1959},"Barla, P., Joshi, V.K., Bhat, S.: A novel self write-terminated driver for hybrid STT-MTJ\u002FCMOS LIM structure. Ain Shams Eng. J. https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.asej.2020.10.012",{"doi":1960},"10.1016\u002Fj.asej.2020.10.012",{"id":26,"text":1962,"url":26,"identifiers":1963},"Liu, L., Pai, C.-F., Li, Y., Tseng, H.W., Ralph, D.C., Buhrman, R.A.: Spin-torque switching with the giant spin Hall effect of tantalum. Science 336(6081), 555–558 (2012). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1218197",{"doi":1964},"10.1126\u002Fscience.1218197",{"id":26,"text":1966,"url":26,"identifiers":1967},"Pai, C.-F., Liu, L., Li, Y., Tseng, H.W., Ralph, D.C., Buhrman, R.A.: Spin transfer torque devices utilizing the giant spin Hall effect of tungsten. Appl. Phys. Lett. 101(12), 122404 (2012). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4753947",{"doi":1968},"10.1063\u002F1.4753947",{"id":26,"text":1970,"url":26,"identifiers":1971},"Cubukcu, M., Boulle, O., Drouard, M., Garello, K., Onur Avci, C., Mihai Miron, I., Langer, J.,  Ocker, B., Gambardella, P., Gaudin, G.: Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction. Appl. Phys. Lett. 104(4), 042406 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4863407",{"doi":1972},"10.1063\u002F1.4863407",{"id":26,"text":1974,"url":26,"identifiers":1975},"Nagaosa, N., Sinova, J., Onoda, S., MacDonald, A.H., Ong, N.P.: Anomalous Hall effect. Rev. Mod. Phys. 82(2), 1539–1592 (2010). https:\u002F\u002Fdoi.org\u002F10.1103\u002FRevModPhys.82.1539",{"doi":1976},"10.1103\u002FRevModPhys.82.1539",{"id":26,"text":1978,"url":26,"identifiers":1979},"Inoue, J., Ohno, H.: Taking the Hall effect for a spin. Science 309(5743), 2004–2005 (2005). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1113956",{"doi":1980},"10.1126\u002Fscience.1113956",{"id":26,"text":1982,"url":26,"identifiers":1983},"D’Yakonov, M.I., Perel’, V.I.: Possibility of orienting electron spins with current. JETPL 13, 467. (1971) https:\u002F\u002Fui.adsabs.harvard.edu\u002Fabs\u002F1971JETPL..13..467D\u002Fabstract",{},{"id":26,"text":1985,"url":26,"identifiers":1986},"Francis, M.N., David, B.N.H.: The scattering of fast electrons by atomic nuclei. Proc. R. Soc. Lond. A 124(794), 425–442 (1929). https:\u002F\u002Fdoi.org\u002F10.1098\u002Frspa.1929.0127",{"doi":1987},"10.1098\u002Frspa.1929.0127",{"id":26,"text":1989,"url":26,"identifiers":1990},"Hirsch, J.E.: Spin Hall effect. Phys. Rev. Lett. 83(9), 1834–1837 (1999). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.83.1834",{"doi":1991},"10.1103\u002FPhysRevLett.83.1834",{"id":26,"text":1993,"url":26,"identifiers":1994},"Saitoh, E., Ueda, M., Miyajima, H., Tatara, G.: Conversion of spin current into charge current at room temperature: inverse spin-Hall effect. Appl. Phys. Lett. 88(18), 182509 (2006). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.2199473",{"doi":1995},"10.1063\u002F1.2199473",{"id":26,"text":1997,"url":26,"identifiers":1998},"Smit, J.: The spontaneous hall effect in ferromagnetics II. Physica 24(1), 39–51 (1958). https:\u002F\u002Fdoi.org\u002F10.1016\u002FS0031-8914(58)93541-9",{"doi":1999},"10.1016\u002FS0031-8914(58)93541-9",{"id":26,"text":2001,"url":26,"identifiers":2002},"Zhang, S.: Spin Hall effect in the presence of spin diffusion. Phys. Rev. Lett. 85(2), 393–396 (2000). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.85.393",{"doi":2003},"10.1103\u002FPhysRevLett.85.393",{"id":26,"text":2005,"url":26,"identifiers":2006},"Murakami, S., Nagaosa, N., Zhang, S.-C.: Dissipationless quantum spin current at room temperature. Science 301(5638), 1348–1351 (2003). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1087128",{"doi":2007},"10.1126\u002Fscience.1087128",{"id":26,"text":2009,"url":26,"identifiers":2010},"Sinova, J., Culcer, D., Niu, Q., Sinitsyn, N.A., Jungwirth, T., MacDonald, A.H.: Universal intrinsic spin Hall effect. Phys. Rev. Lett. 92(12), 126603 (2004). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.92.126603",{"doi":2011},"10.1103\u002FPhysRevLett.92.126603",{"id":26,"text":2013,"url":26,"identifiers":2014},"Brataas, A., Hals, K.M.D.: Spin–orbit torques in action. Nat. Nanotechnol. 9(2), 86–88 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2014.8",{"doi":2015},"10.1038\u002Fnnano.2014.8",{"id":26,"text":2017,"url":26,"identifiers":2018},"Hoffmann, A.: Spin Hall effects in metals. IEEE Trans. Magn. 49(10), 5172–5193 (2013). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2013.2262947",{"doi":2019},"10.1109\u002FTMAG.2013.2262947",{"id":26,"text":2021,"url":26,"identifiers":2022},"Liu, L., Moriyama, T., Ralph, D.C., Buhrman, R.A.: Spin-torque ferromagnetic resonance induced by the spin Hall effect. Phys. Rev. Lett. 106(3), 036601 (2011). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.106.036601",{"doi":2023},"10.1103\u002FPhysRevLett.106.036601",{"id":26,"text":2025,"url":26,"identifiers":2026},"van den Brink, A., Cosemans, S., Cornelissen, S., Manfrini, M., Vaysset, A., Van Roy, W., Min, T., Swagten, H.J.M., Koopmans, B.: Spin-Hall-assisted magnetic random access memory. Appl. Phys. Lett. 104(1), 012403 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4858465",{"doi":2027},"10.1063\u002F1.4858465",{"id":26,"text":2029,"url":26,"identifiers":2030},"Yu, G., Upadhyaya, P., Fan, Y., Alzate, J.G., Jiang, W., Wong, K.L., Takei, S., Bender, S.A., Chang, L.-T., Jiang, Y., Lang, M., Tang, J., Wang, Y., Tserkovnyak, Y., Amiri, P.K., Wang, K.L.: Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields. Nat. Nanotechnol. 9(7), 548–554 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2014.94",{"doi":2031},"10.1038\u002Fnnano.2014.94",{"id":26,"text":2033,"url":26,"identifiers":2034},"Lau, Y.-C., Betto, D., Rode, K., Coey, J.M.D., Stamenov, P.: Spin–orbit torque switching without an external field using interlayer exchange coupling. Nat. Nanotechnol. 11(9), 758–762 (2016). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2016.84",{"doi":2035},"10.1038\u002Fnnano.2016.84",{"id":26,"text":2037,"url":26,"identifiers":2038},"Shiota, Y., Nozaki, T., Bonell, F., Murakami, S., Shinjo, T., Suzuki, Y.: Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses. Nat. Mater. 11(1), 39–43 (2012). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat3172",{"doi":2039},"10.1038\u002Fnmat3172",{"id":26,"text":2041,"url":26,"identifiers":2042},"Garcia, V., Bibes, M., Bocher, L., Valencia, S., Kronast, F., Crassous, A., Moya, X., Enouz-Vedrenne, S., Gloter, A., Imhoff, D., Deranlot, C., Mathur, N.D., Fusil, S., Bouzehouane, K., Barthélémy, A.: Ferroelectric control of spin polarization. Science 327(5969), 1106–1110 (2010). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1184028",{"doi":2043},"10.1126\u002Fscience.1184028",{"id":26,"text":2045,"url":26,"identifiers":2046},"Chu, Y.-H., Martin, L.W., Holcomb, M.B., Gajek, M., Han, S.-J., He, Q., Balke, N., Yang, C.-H., Lee, D., Hu, W., Zhan, Q., Yang, P.-L., Fraile-Rodríguez, A., Scholl, A., Wang, S.X., Ramesh, R.: Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. Nat. Mater. 7(6), 478–482 (2008). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat2184",{"doi":2047},"10.1038\u002Fnmat2184",{"id":26,"text":2049,"url":26,"identifiers":2050},"Nozaki, T., Shiota, Y., Shiraishi, M., Shinjo, T., Suzuki, Y.: Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions. Appl. Phys. Lett. 96(2), 022506 (2010). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3279157",{"doi":2051},"10.1063\u002F1.3279157",{"id":26,"text":2053,"url":26,"identifiers":2054},"Wang, W.-G., Li, M., Hageman, S., Chien, C.L.: Electric-field-assisted switching in magnetic tunnel junctions. Nat. Mater. 11(1), 64–68 (2011). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat3171",{"doi":2055},"10.1038\u002Fnmat3171",{"id":26,"text":2057,"url":26,"identifiers":2058},"Duan, C.-G., Jaswal, S.S., Tsymbal, E.Y.: Predicted magnetoelectric effect in Fe\u002FBaTiO$$_{3}$$ multilayers: ferroelectric control of magnetism. Phys. Rev. Lett. 97(4), 047201 (2006). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.97.047201",{"doi":2059},"10.1103\u002FPhysRevLett.97.047201",{"id":26,"text":2061,"url":26,"identifiers":2062},"Weisheit, M., Fähler, S., Marty, A., Souche, Y., Poinsignon, C., Givord, D.: Electric field-induced modification of magnetism in thin-film ferromagnets. Science 315(5810), 349–351 (2007). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1136629",{"doi":2063},"10.1126\u002Fscience.1136629",{"id":26,"text":2065,"url":26,"identifiers":2066},"Maruyama, T., Shiota, Y., Nozaki, T., Ohta, K., Toda, N., Mizuguchi, M., Tulapurkar, A.A., Shinjo, T., Shiraishi, M., Mizukami, S., Ando, Y., Suzuki, Y.: Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. Nat. Nanotechnol. 4(3), 158–161 (2009). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2008.406",{"doi":2067},"10.1038\u002Fnnano.2008.406",{"id":26,"text":2069,"url":26,"identifiers":2070},"Endo, M., Kanai, S., Ikeda, S., Matsukura, F., Ohno, H.: Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO\u002FCo40Fe40B20\u002FTa structures. Appl. Phys. Lett. 96(21), 212503 (2010). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3429592",{"doi":2071},"10.1063\u002F1.3429592",{"id":26,"text":2073,"url":26,"identifiers":2074},"Nikonov, D.E., Young, I.A.: Benchmarking spintronic logic devices based on magnetoelectric oxides. J. Mater. Res. 29(18), 2109–2115 (2014). https:\u002F\u002Fdoi.org\u002F10.1557\u002Fjmr.2014.243",{"doi":2075},"10.1557\u002Fjmr.2014.243",{"id":26,"text":2077,"url":26,"identifiers":2078},"Grezes, C., Ebrahimi, F., Alzate, J.G., Cai, X., Katine, J.A., Langer, J., Ocker, B., Khalili Amiri, P., Wang, K.L.: Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product. Appl. Phys. Lett. 108(1), 012403 (2016). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4939446",{"doi":2079},"10.1063\u002F1.4939446",{"id":26,"text":2081,"url":26,"identifiers":2082},"Kanai, S., Nakatani, Y., Yamanouchi, M., Ikeda, S., Sato, H., Matsukura, F., Ohno, H.: Magnetization switching in a CoFeB\u002FMgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect. Appl. Phys. Lett. 104(21), 212406 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4880720",{"doi":2083},"10.1063\u002F1.4880720",{"id":26,"text":2085,"url":26,"identifiers":2086},"Kanai, S., Matsukura, F., Ohno, H.: Electric-field-induced magnetization switching in CoFeB\u002FMgO magnetic tunnel junctions with high junction resistance. Appl. Phys. Lett. 108(19), 192406 (2016). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4948763",{"doi":2087},"10.1063\u002F1.4948763",{"id":26,"text":2089,"url":26,"identifiers":2090},"Alzate, J., Amiri, P., Cherepov, S., Zhu, J., Upadhyaya, P., Lewis, M., Krivorotov, I., Katine, J.,  Langer, J., Galatsis, K., et al.: Voltage-induced switching of cofeb-mgo magnetic tunnel junctions. In: 56th Conference on Magnetism and Magnetic Materials, pp. EG–11 (2011)",{"doi":2091},"10.1109\u002FIEDM.2012.6479130",{"id":26,"text":2093,"url":26,"identifiers":2094},"Amiri, P.K., Wang, K.L.: Voltage-controlled magnetic anisotropy in spintronic devices. SPIN 02(03), 1240002 (2012). https:\u002F\u002Fdoi.org\u002F10.1142\u002FS2010324712400024",{"doi":2095},"10.1142\u002FS2010324712400024",{"id":26,"text":2097,"url":26,"identifiers":2098},"Ikeda, S., Sato, H., Yamanouchi, M., Gan, H., Miura, K., Mizunuma, K., Kanai, S., Fukami, S., Matsukura, F., Kasai, N., Ohno, H.: Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI. SPIN 02(03), 1240003 (2012). https:\u002F\u002Fdoi.org\u002F10.1142\u002FS2010324712400036",{"doi":2099},"10.1142\u002FS2010324712400036",{"id":26,"text":2101,"url":26,"identifiers":2102},"Song, C., Cui, B., Li, F., Zhou, X., Pan, F.: Recent progress in voltage control of magnetism: materials, mechanisms, and performance. Prog. Mater Sci. 87, 33–82 (2017). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.pmatsci.2017.02.002",{"doi":2103},"10.1016\u002Fj.pmatsci.2017.02.002",{"id":26,"text":2105,"url":26,"identifiers":2106},"Niranjan, M.K., Duan, C.-G., Jaswal, S.S., Tsymbal, E.Y.: Electric field effect on magnetization at the Fe\u002FMgO(001) interface. Appl. Phys. Lett. 96(22), 222504 (2010). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3443658",{"doi":2107},"10.1063\u002F1.3443658",{"id":26,"text":2109,"url":26,"identifiers":2110},"Velev J., P., Jaswal S., S., Tsymbal E., Y.: Multi-ferroic and magnetoelectric materials and interfaces. Philos. Trans. R. Soc. A 369(1948), 3069–3097 (2011). https:\u002F\u002Fdoi.org\u002F10.1098\u002Frsta.2010.0344",{"doi":2111},"10.1098\u002Frsta.2010.0344",{"id":26,"text":2113,"url":26,"identifiers":2114},"Barnes, S.E., Ieda, J., Maekawa, S.: Rashba Spin–orbit anisotropy and the electric field control of magnetism. Sci. Rep. 4(4105), 1–5 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep04105",{"doi":2115},"10.1038\u002Fsrep04105",{"id":26,"text":2117,"url":26,"identifiers":2118},"Kang, W., Ran, Y., Zhang, Y., Lv, W., Zhao, W.: Modeling and exploration of the voltage-controlled magnetic anisotropy effect for the next-generation low-power and high-speed MRAM applications. IEEE Trans. Nanotechnol. 16(3), 387–395 (2017). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTNANO.2017.2660530",{"doi":2119},"10.1109\u002FTNANO.2017.2660530",{"id":26,"text":2121,"url":26,"identifiers":2122},"Peng, S., Wang, M., Yang, H., Zeng, L., Nan, J., Zhou, J., Zhang, Y., Hallal, A., Chshiev, M., Wang, K.L., Zhang, Q., Zhao, W.: Origin of interfacial perpendicular magnetic anisotropy in MgO\u002FCoFe\u002Fmetallic capping layer structures. Sci. Rep. 5(18173), 1–6 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep18173",{"doi":2123},"10.1038\u002Fsrep18173",{"id":26,"text":2125,"url":26,"identifiers":2126},"Kang, W., Zhang, L., Zhao, W., Klein, J.-O., Zhang, Y., Ravelosona, D., Chappert, C.: Yield and reliability improvement techniques for emerging nonvolatile STT-MRAM. IEEE J. Emerging Sel. Top. Circuits Syst. 5(1), 28–39 (2015). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJETCAS.2014.2374291",{"doi":2127},"10.1109\u002FJETCAS.2014.2374291",{"id":26,"text":2129,"url":26,"identifiers":2130},"Kanai, S., Yamanouchi, M., Ikeda, S., Nakatani, Y., Matsukura, F., Ohno, H.: Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction. Appl. Phys. Lett. 101(12), 122403 (2012). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4753816",{"doi":2131},"10.1063\u002F1.4753816",{"id":26,"text":2133,"url":26,"identifiers":2134},"Alzate, J.G., Amiri, P.K., Upadhyaya, P., Cherepov, S.S., Zhu, J., Lewis, M., Dorrance, R., Katine, J.A., Langer, J., Galatsis, K., Markovic, D., Krivorotov, I., Wang, K.L.: Voltage-induced switching of nanoscale magnetic tunnel junctions. In: 2012 International Electron Devices Meeting, pp. 29.5.1–29.5.4 (2013). https:\u002F\u002Fdoi.org\u002F10.1109\u002FIEDM.2012.6479130",{"doi":2091},{"id":26,"text":2136,"url":26,"identifiers":2137},"Shiota, Y., Miwa, S., Nozaki, T., Bonell, F., Mizuochi, N., Shinjo, T., Kubota, H., Yuasa, S., Suzuki, Y.: Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product. Appl. Phys. Lett. 101(10), 102406 (2012). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4751035",{"doi":2138},"10.1063\u002F1.4751035",{"id":26,"text":2140,"url":26,"identifiers":2141},"Amiri, P.K., Wang, K.L., Galatsis, K.: Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory (meram). US Patent 9,129,691 (2015)",{},{"id":26,"text":2143,"url":26,"identifiers":2144},"Kang, W., Ran, Y., Lv, W., Zhang, Y., Zhao, W.: High-speed, low-power, magnetic non-volatile flip-flop with voltage-controlled, magnetic anisotropy assistance. IEEE Magn. Lett. 7, 1–5 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLMAG.2016.2604205",{"doi":2145},"10.1109\u002FLMAG.2016.2604205",{"id":26,"text":2147,"url":26,"identifiers":2148},"Wang, W.G., Chien, C.L.: Voltage-induced switching in magnetic tunnel junctions with perpendicular magnetic anisotropy. J. Phys. D Appl. Phys. 46(7), 074004 (2013). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0022-3727\u002F46\u002F7\u002F074004",{"doi":2149},"10.1088\u002F0022-3727\u002F46\u002F7\u002F074004",{"id":26,"text":2151,"url":26,"identifiers":2152},"Amiri, M., Prenosil, V., Cvachovec, F.: Optimum filter-based discrimination of neutrons and gamma rays, pp. 1–7 (2015). https:\u002F\u002Fdoi.org\u002F10.1109\u002FANIMMA.2015.7465552",{"doi":2153},"10.1109\u002FANIMMA.2015.7465552",{"id":26,"text":2155,"url":26,"identifiers":2156},"Shreya, S., Jain, A., Kaushik, B.K.: Computing-in-memory using voltage-controlled spin-orbit torque based MRAM array. Microelectron. J. 104943 (2020). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.mejo.2020.104943",{"doi":2157},"10.1016\u002Fj.mejo.2020.104943",{"id":26,"text":2159,"url":26,"identifiers":2160},"Weiss, P.: L’hypothèse du champ moléculaire et la propriété ferromagnétique",{},{"id":26,"text":2162,"url":26,"identifiers":2163},"Hubert, A., Schäfer, R.: Magnetic Domains: The Analysis of Magnetic Microstructures. Springer Science & Business Media, Cham (2008)",{},{"id":26,"text":2165,"url":26,"identifiers":2166},"Thomas, L., Hayashi, M., Jiang, X., Moriya, R., Rettner, C., Parkin, S.: Resonant amplification of magnetic domain-wall motion by a train of current pulses. Science 315(5818), 1553–1556 (2007). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1137662",{"doi":2167},"10.1126\u002Fscience.1137662",{"id":26,"text":2169,"url":26,"identifiers":2170},"Thomas, L., Hayashi, M., Jiang, X., Moriya, R., Rettner, C., Parkin, S.S.P.: Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length. Nature 443(7108), 197–200 (2006). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnature05093",{"doi":2171},"10.1038\u002Fnature05093",{"id":26,"text":2173,"url":26,"identifiers":2174},"Lewis, E.R., Petit, D., O’Brien, L., Fernandez-Pacheco, A., Sampaio, J., Jausovec, A.-V., Zeng, H.T., Read, D.E., Cowburn, R.P.: Fast domain wall motion in magnetic comb structures. Nat. Mater. 9(12), 980–983 (2010). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat2857",{"doi":2175},"10.1038\u002Fnmat2857",{"id":26,"text":2177,"url":26,"identifiers":2178},"Berger, L.: Low-field magnetoresistance and domain drag in ferromagnets. J. Appl. Phys. 49(3), 2156–2161 (1978). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.324716",{"doi":2179},"10.1063\u002F1.324716",{"id":26,"text":2181,"url":26,"identifiers":2182},"Berger, L.: Exchange interaction between ferromagnetic domain wall and electric current in very thin metallic films. J. Appl. Phys. 55(6), 1954–1956 (1984). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.333530",{"doi":2183},"10.1063\u002F1.333530",{"id":26,"text":2185,"url":26,"identifiers":2186},"Deb, S., Chattopadhyay, A.: Spintronic device-structure for low-energy XOR logic using domain wall motion. In: IEEE International Symposium on Circuits and Systems (ISCAS), vol. 2019, pp. 1–5 (2019). https:\u002F\u002Fdoi.org\u002F10.1109\u002FISCAS.2019.8702160",{"doi":2187},"10.1109\u002FISCAS.2019.8702160",{"id":26,"text":2189,"url":26,"identifiers":2190},"Allwood, D.A., Xiong, G., Faulkner, C.C., Atkinson, D., Petit, D., Cowburn, R.P.: Magnetic domain-wall logic. Science 309(5741), 1688–1692 (2005). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1108813",{"doi":2191},"10.1126\u002Fscience.1108813",{"id":26,"text":2193,"url":26,"identifiers":2194},"Xu, P., Xia, K., Gu, C., Tang, L., Yang, H., Li, J.: An all-metallic logic gate based on current-driven domain wall motion. Nat. Nanotechnol. 3(2), 97–100 (2008). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2008.1",{"doi":2195},"10.1038\u002Fnnano.2008.1",{"id":26,"text":2197,"url":26,"identifiers":2198},"Parkin, S.S.P., Hayashi, M., Thomas, L.: Magnetic domain-wall racetrack memory. Science 320(5873), 190–194 (2008). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1145799",{"doi":2199},"10.1126\u002Fscience.1145799",{"id":26,"text":2201,"url":26,"identifiers":2202},"Huang, K., Zhao, R., Lian, Y.: Racetrack memory based hybrid look-up table (LUT) for low power reconfigurable computing. J. Parallel Distrib. Comput. 117, 127–137 (2018). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jpdc.2018.02.018",{"doi":2203},"10.1016\u002Fj.jpdc.2018.02.018",{"id":26,"text":2205,"url":26,"identifiers":2206},"Luo, Z., Hrabec, A., Dao, T.P., Sala, G., Finizio, S., Feng, J., Mayr, S., Raabe, J., Gambardella, P., Heyderman, L.J.: Current-driven magnetic domain-wall logic. Nature 579(7798), 214–218 (2020). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41586-020-2061-y",{"doi":2207},"10.1038\u002Fs41586-020-2061-y",{"id":26,"text":2209,"url":26,"identifiers":2210},"Roohi, A., Zand, R., DeMara, R.F.: A tunable majority gate-based full adder using current-induced domain wall nanomagnets. IEEE Trans. Magn. 52(8), 1–7 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTMAG.2016.2540600",{"doi":2211},"10.1109\u002FTMAG.2016.2540600",{"id":26,"text":2213,"url":26,"identifiers":2214},"Dhull, S., Nisar, A., Kaushik, B.K.: High frequency current induced domain wall motion based nano oscillator. In: Spintronics XIII, Vol. 11470, International Society for Optics and Photonics, p. 114703Y (2020) https:\u002F\u002Fdoi.org\u002F10.1117\u002F12.2568313",{"doi":2215},"10.1117\u002F12.2568313",{"id":26,"text":2217,"url":26,"identifiers":2218},"Parkin, S.S.: Shiftable magnetic shift register and method of using the same. US Patent 6,834,005 (2004)",{},{"id":26,"text":2220,"url":26,"identifiers":2221},"Hayashi, M., Thomas, L., Moriya, R., Rettner, C., Parkin, S.S.P.: Current-controlled magnetic domain-wall nanowire shift register. Science 320(5873), 209–211 (2008). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1154587",{"doi":2222},"10.1126\u002Fscience.1154587",{"id":26,"text":2224,"url":26,"identifiers":2225},"Parkin, S., Yang, S.-H.: Memory on the racetrack. Nat. Nanotechnol. 10(3), 195–198 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2015.41",{"doi":2226},"10.1038\u002Fnnano.2015.41",{"id":26,"text":2228,"url":26,"identifiers":2229},"Mittal, S.: A survey of techniques for architecting processor components using domain-wall memory. J. Emerg. Technol. Comput. Syst. 13(2), 1–25 (2016). https:\u002F\u002Fdoi.org\u002F10.1145\u002F2994550",{"doi":2230},"10.1145\u002F2994550",{"id":26,"text":2232,"url":26,"identifiers":2233},"Filippou, PCh., Jeong, J., Ferrante, Y., Yang, S.-H., Topuria, T., Samant, M.G., Parkin, S.S.P.: Chiral domain wall motion in unit-cell thick perpendicularly magnetized Heusler films prepared by chemical templating. Nat. Commun. 9(4653), 1–10 (2018). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41467-018-07091-3",{"doi":2234},"10.1038\u002Fs41467-018-07091-3",{"id":26,"text":2236,"url":26,"identifiers":2237},"Venkatesan, R., Kozhikkottu, V.J., Sharad, M., Augustine, C., Raychowdhury, A., Roy, K., Raghunathan, A.: Cache design with domain wall memory. IEEE Trans. Comput. 65(4), 1010–1024 (2015). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTC.2015.2506581",{"doi":2238},"10.1109\u002FTC.2015.2506581",{"id":26,"text":2240,"url":26,"identifiers":2241},"Sun, Z., Bi, X., Wu, W., Yoo, S., Li, H.: Array organization and data management exploration in racetrack memory. IEEE Trans. Comput. 65(4), 1041–1054 (2014). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTC.2014.2360545",{"doi":2242},"10.1109\u002FTC.2014.2360545",{"id":26,"text":2244,"url":26,"identifiers":2245},"Wang, G., Zhang, Y., Zhang, B., Wu, B., Nan, J., Zhang, X., Zhang, Z., Klein, J.-O., Ravelosona, D., Wang, Z., Zhang, Y., Zhao, W.: Ultra-dense ring-shaped racetrack memory cache design. IEEE Trans. Circ. Syst. I 66(1), 215–225 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTCSI.2018.2866932",{"doi":2246},"10.1109\u002FTCSI.2018.2866932",{"id":26,"text":2248,"url":26,"identifiers":2249},"Wang, S., Liang, Y., Zhang, C., Xie, X., Sun, G., Liu, Y., Wang, Y., Li, X.: Performance-centric register file design for GPUs using racetrack memory. In: 2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC), pp. 25–30 (2016). https:\u002F\u002Fdoi.org\u002F10.1109\u002FASPDAC.2016.7427984",{"doi":2250},"10.1109\u002FASPDAC.2016.7427984",{"id":26,"text":2252,"url":26,"identifiers":2253},"Mao, M., Wen, W., Zhang, Y., Chen, Y., Li, H.: Exploration of GPGPU register file architecture using domain-wall-shift-write based racetrack memory. IEEE (2014). https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F6881523",{},{"id":26,"text":2255,"url":26,"identifiers":2256},"Liang, Y., Wang, S.: Performance-centric optimization for racetrack memory based register file on GPUs. J. Comput. Sci. Technol. 31(1), 36–49 (2016). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs11390-016-1610-1",{"doi":2257},"10.1007\u002Fs11390-016-1610-1",{"id":26,"text":2259,"url":26,"identifiers":2260},"Sun, G., Zhang, C., Li, H., Zhang, Y., Zhang, W., Gu, Y., Sun, Y., Klein, J.-O., Ravelosona, D.,  Liu, Y., Zhao, W., Yang, H.: From device to system: cross-layer design exploration of racetrack memory. In: 2015 Design, Automation & Test in Europe Conference & Exhibition (DATE), pp. 1018–1023 (2015). https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F7092539",{},{"id":26,"text":2262,"url":26,"identifiers":2263},"Yang, S.-H., Ryu, K.-S., Parkin, S.: Domain-wall velocities of up to 750 m s-1 driven by exchange-coupling torque in synthetic antiferromagnets. Nat. Nanotechnol. 10(3), 221–226 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2014.324",{"doi":2264},"10.1038\u002Fnnano.2014.324",{"id":26,"text":2266,"url":26,"identifiers":2267},"Bang, D., Van Thach, P., Awano, H.: Current-induced domain wall motion in antiferromagnetically coupled structures: fundamentals and applications. J. Sci. Adv. Mater. Devices 3(4), 389–398 (2018). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jsamd.2018.09.003",{"doi":2268},"10.1016\u002Fj.jsamd.2018.09.003",{"id":26,"text":2270,"url":26,"identifiers":2271},"Al Bahri, M., Borie, B., Jin, T. L., Sbiaa, R., Kläui, M., Piramanayagam, S. N.: Staggered magnetic nanowire devices for effective domain-wall pinning in racetrack memory. Phys. Rev. Appl. 11(2), 024023 (2019). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevApplied.11.024023",{"doi":2272},"10.1103\u002FPhysRevApplied.11.024023",{"id":26,"text":2274,"url":26,"identifiers":2275},"Chen, T.-C., Parkin, S.S.: Method of fabricating data tracks for use in a magnetic shift register memory device. US Patent 6,955,926 (2005)",{},{"id":26,"text":2277,"url":26,"identifiers":2278},"Shibata, J., Tatara, G., Kohno, H.: A brief review of field- and current-driven domain-wall motion. J. Phys. D Appl. Phys. 44(38), 384004 (2011). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0022-3727\u002F44\u002F38\u002F384004",{"doi":2279},"10.1088\u002F0022-3727\u002F44\u002F38\u002F384004",{"id":26,"text":2281,"url":26,"identifiers":2282},"Zhou, H., Shi, S., Nian, D., Cui, S., Luo, J., Qiu, Y., Yang, H., Zhu, M., Yu, G.: Voltage control of magnetic domain wall injection into strain-mediated multiferroic heterostructures. Nanoscale 12(27), 14479–14486 (2020). https:\u002F\u002Fdoi.org\u002F10.1039\u002FD0NR02595J",{"doi":2283},"10.1039\u002FD0NR02595J",{"id":26,"text":2285,"url":26,"identifiers":2286},"Miron, I.M., Moore, T., Szambolics, H., Buda-Prejbeanu, L.D., Auffret, S., Rodmacq, B., Pizzini, S., Vogel, J., Bonfim, M., Schuhl, A., Gaudin, G.: Fast current-induced domain-wall motion controlled by the Rashba effect. Nat. Mater. 10(6), 419–423 (2011). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat3020",{"doi":2287},"10.1038\u002Fnmat3020",{"id":26,"text":2289,"url":26,"identifiers":2290},"Emori, S., Bauer, U., Ahn, S.-M., Martinez, E., Beach, G.S.D.: Current-driven dynamics of chiral ferromagnetic domain walls. Nat. Mater. 12(7), 611–616 (2013). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat3675",{"doi":2291},"10.1038\u002Fnmat3675",{"id":26,"text":2293,"url":26,"identifiers":2294},"Mihai Miron, I., Gaudin, G., Auffret, S., Rodmacq, B., Schuhl, A., Pizzini, S., Vogel, J.,  Gambardella, P.: Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer. Nat. Mater. 9(3), 230–234 (2010). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat2613",{"doi":2295},"10.1038\u002Fnmat2613",{"id":26,"text":2297,"url":26,"identifiers":2298},"Ryu, K.-S., Thomas, L., Yang, S.-H., Parkin, S.: Chiral spin torque at magnetic domain walls. Nat. Nanotechnol. 8(7), 527–533 (2013). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2013.102",{"doi":2299},"10.1038\u002Fnnano.2013.102",{"id":26,"text":2301,"url":26,"identifiers":2302},"Ryu, K.-S., Yang, S.-H., Thomas, L., Parkin, S.S.P.: Chiral spin torque arising from proximity-induced magnetization. Nat. Commun. 5(3910), 1–8 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fncomms4910",{"doi":2303},"10.1038\u002Fncomms4910",{"id":26,"text":2305,"url":26,"identifiers":2306},"Yun, J., Li, D., Cui, B., Guo, X., Wu, K., Zhang, X., Wang, Y., Mao, J., Zuo, Y., Xi, L.: Current induced domain wall motion and tilting in Pt\u002FCo\u002FTa structures with perpendicular magnetic anisotropy in the presence of the Dyzaloshinskii-Moriya interaction. J. Phys. D Appl. Phys. 51(15), 155001 (2018). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1361-6463\u002Faab419",{"doi":2307},"10.1088\u002F1361-6463\u002Faab419",{"id":26,"text":2309,"url":26,"identifiers":2310},"Pi, U.H., Won Kim, K., Bae, J.Y., Lee, S.C., Cho, Y.J., Kim, K.S., Seo, S.: Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer. Appl. Phys. Lett. 97(16), 162507 (2010). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3502596",{"doi":2311},"10.1063\u002F1.3502596",{"id":26,"text":2313,"url":26,"identifiers":2314},"Suzuki, T., Fukami, S., Ishiwata, N., Yamanouchi, M., Ikeda, S., Kasai, N., Ohno, H.: Current-induced effective field in perpendicularly magnetized Ta\u002FCoFeB\u002FMgO wire. Appl. Phys. Lett. 98(14), 142505 (2011). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3579155",{"doi":2315},"10.1063\u002F1.3579155",{"id":26,"text":2317,"url":26,"identifiers":2318},"Yang, S.-H., Parkin, S.: Novel domain wall dynamics in synthetic antiferromagnets. J. Phys. Condens. Matter 29(30), 303001 (2017). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1361-648x\u002Faa752d",{"doi":2319},"10.1088\u002F1361-648x\u002Faa752d",{"id":26,"text":2321,"url":26,"identifiers":2322},"Behin-Aein, B., Datta, D., Salahuddin, S., Datta, S.: Proposal for an all-spin logic device with built-in memory. Nat. Nanotechnol. 5(4), 266–270 (2010). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2010.31",{"doi":2323},"10.1038\u002Fnnano.2010.31",{"id":26,"text":2325,"url":26,"identifiers":2326},"Behin-Aein, B., Datta, S.: All-spin logic. IEEE, pp. 21–23 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FDRC.2010.5551948",{"doi":2327},"10.1109\u002FDRC.2010.5551948",{"id":26,"text":2329,"url":26,"identifiers":2330},"An, Q., Su, L., Klein, J.-O., Beux, S.L., O’Connor, I., Zhao, W.: Full-adder circuit design based on all-spin logic device, pp. 163–168 (2015). https:\u002F\u002Fdoi.org\u002F10.1109\u002FNANOARCH.2015.7180606",{"doi":2331},"10.1109\u002FNANOARCH.2015.7180606",{"id":26,"text":2333,"url":26,"identifiers":2334},"Mankalale, M.: Design and optimization of low-power and high-speed spintronic logic devices. Ph.D. thesis, The university of Minnesota, USA (2020)",{},{"id":26,"text":2336,"url":26,"identifiers":2337},"Augustine, C., Panagopoulos, G., Behin-Aein, B., Srinivasan, S., Sarkar, A., Roy, K.: Low-power functionality enhanced computation architecture using spin-based devices. In: 2011 IEEE\u002FACM International Symposium on Nanoscale Architectures, pp. 129–136 (2011). https:\u002F\u002Fdoi.org\u002F10.1109\u002FNANOARCH.2011.5941494",{"doi":2338},"10.1109\u002FNANOARCH.2011.5941494",{"id":26,"text":2340,"url":26,"identifiers":2341},"Wang, S., Yang, Y., Song, W., Cui, H., Li, C., Cai, L.: All-spin logic XOR gate implementation based on input interface. IET Circuits Devices Syst. 13(5), 607–613 (2019). https:\u002F\u002Fdoi.org\u002F10.1049\u002Fiet-cds.2018.5187",{"doi":2342},"10.1049\u002Fiet-cds.2018.5187",{"id":26,"text":2344,"url":26,"identifiers":2345},"An, Q., Beux, S.L., O’Connor, I., Klein, J.O., Zhao, W.: Arithmetic logic unit based on all-spin logic devices. IEEE, pp. 317–320 (2017). https:\u002F\u002Fdoi.org\u002F10.1109\u002FNEWCAS.2017.8010169",{"doi":2346},"10.1109\u002FNEWCAS.2017.8010169",{"id":26,"text":2348,"url":26,"identifiers":2349},"Bandyopadhyay, S., Cahay, M.: Electron spin for classical information processing: a brief survey of spin-based logic devices. Nanotechnology 20(41), 412001 (2009). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0957-4484\u002F20\u002F41\u002F412001",{"doi":2350},"10.1088\u002F0957-4484\u002F20\u002F41\u002F412001",{"id":26,"text":2352,"url":26,"identifiers":2353},"Alasad, Q., Lin, J., Yuan, J.-S., Awad, Deliang, A.: Resilient and secure hardware devices using ASL. ACM J. Emerg. Technol. Comput. Syst. 1(1), 1–26 (2020). https:\u002F\u002Fdoi.org\u002F10.1145\u002F3429982",{"doi":2354},"10.1145\u002F3429982",{"id":26,"text":2356,"url":26,"identifiers":2357},"Yang, M., Deng, Y., Wu, Z., Cai, K., Edmonds, K.W., Li, Y., Sheng, Y., Wang, S., Cui, Y., Luo, J., Ji, Y., Zheng, H.-Z., Wang, K.: Spin logic devices via electric field controlled magnetization reversal by spin–orbit torque. IEEE Electron Device Lett. 40(9), 1554–1557 (2019). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLED.2019.2932479",{"doi":2358},"10.1109\u002FLED.2019.2932479",{"id":26,"text":2360,"url":26,"identifiers":2361},"Luo, Z., Xiong, C., Zhang, X., Guo, Z.-G., Cai, J., Zhang, X.: Extremely large magnetoresistance at low magnetic field by coupling the nonlinear transport effect and the anomalous Hall effect. Adv. Mater. 28(14), 2760–2764 (2016). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fadma.201504023",{"doi":2362},"10.1002\u002Fadma.201504023",{"id":26,"text":2364,"url":26,"identifiers":2365},"Nan, J., Zhang, K., Zhang, Y., Yan, S., Zhang, Z., Zheng, Z., Wang, G., Leng, Q., Zhang, Y., Zhao, W.: A diode-enhanced scheme for giant magnetoresistance amplification and reconfigurable logic. IEEE Access 8, 87584–87591 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FACCESS.2020.2993460",{"doi":2366},"10.1109\u002FACCESS.2020.2993460",{"id":26,"text":2368,"url":26,"identifiers":2369},"Luo, Z., Lu, Z., Xiong, C., Zhu, T., Wu, W., Zhang, Q., Wu, H., Zhang, X., Zhang, X.: Reconfigurable magnetic logic combined with nonvolatile memory writing. Adv. Mater. 29(4), 1605027 (2017). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fadma.201605027",{"doi":2370},"10.1002\u002Fadma.201605027",{"id":26,"text":2372,"url":26,"identifiers":2373},"Pu, Y., Mou, H., Lu, Z., Nawaz, S., Wang, G., Zhang, Z., Yang, Y., Zhang, X., Zhang, X.: Speed enhancement of magnetic logic-memory device by insulator-to-metal transition. Appl. Phys. Lett. 117(2), 022407 (2020). https:\u002F\u002Fdoi.org\u002F10.1063\u002F5.0013301",{"doi":2374},"10.1063\u002F5.0013301",{"id":26,"text":2376,"url":26,"identifiers":2377},"Shoucair, F., Trajkovic, L.: Analysis and simulation of simple transistor structures exhibiting negative differential resistance, EECS Department, UC Berkeley, Berkeley CA",{},{"id":26,"text":2379,"url":26,"identifiers":2380},"Zhang, K., Cao, K., Zhang, Y., Huang, Z., Cai, W., Wang, J., Nan, J., Wang, G., Zheng, Z., Chen, L., Zhang, Z., Zhang, Y., Yan, S., Zhao, W.: Rectified tunnel magnetoresistance device with high on\u002Foff ratio for in-memory computing. IEEE Electron Device Lett. 41(6), 928–931 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLED.2020.2987211",{"doi":2381},"10.1109\u002FLED.2020.2987211",{"id":26,"text":2383,"url":26,"identifiers":2384},"Skyrme, T.H.R.: A non-linear field theory. In: Selected Papers, with Commentary, of Tony Hilton Royle Skyrme, vol. 3, World Scientific, pp. 195–206 (1994). https:\u002F\u002Fdoi.org\u002F10.1142\u002F9789812795922_0013",{"doi":2385},"10.1142\u002F9789812795922_0013",{"id":26,"text":2387,"url":26,"identifiers":2388},"Skyrme, T.H.R.: A unified field theory of mesons and baryons. Nuclear Phys. 31, 556–569 (1962). https:\u002F\u002Fdoi.org\u002F10.1016\u002F0029-5582(62)90775-7",{"doi":2389},"10.1016\u002F0029-5582(62)90775-7",{"id":26,"text":2391,"url":26,"identifiers":2392},"Fert, A., Cros, V., Sampaio, J.: Skyrmions on the track. Nat. Nanotechnol. 8(3), 152–156 (2013). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2013.29",{"doi":2393},"10.1038\u002Fnnano.2013.29",{"id":26,"text":2395,"url":26,"identifiers":2396},"Finocchio, G., Büttner, F., Tomasello, R., Carpentieri, M., Kläui, M.: Magnetic skyrmions: from fundamental to applications. J. Phys. D Appl. Phys. 49(42), 423001 (2016). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0022-3727\u002F49\u002F42\u002F423001",{"doi":2397},"10.1088\u002F0022-3727\u002F49\u002F42\u002F423001",{"id":26,"text":2399,"url":26,"identifiers":2400},"Pappas, C., Lelièvre-Berna, E., Falus, P., Bentley, P.M., Moskvin, E., Grigoriev, S., Fouquet, P., Farago, B.: Chiral paramagnetic skyrmion-like phase in MnSi. Phys. Rev. Lett. 102(19), 197202 (2009). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.102.197202",{"doi":2401},"10.1103\u002FPhysRevLett.102.197202",{"id":26,"text":2403,"url":26,"identifiers":2404},"Hooft, G. t.: Magnetic monopoles in unified gauge theories. Nucl. Phys. B 79(2), 276–284 (1974). https:\u002F\u002Fdoi.org\u002F10.1016\u002F0550-3213(74)90486-6",{"doi":2405},"10.1016\u002F0550-3213(74)90486-6",{"id":26,"text":2407,"url":26,"identifiers":2408},"Mühlbauer, S., Binz, B., Jonietz, F., Pfleiderer, C., Rosch, A., Neubauer, A., Georgii, R., Böni, P.: Skyrmion lattice in a chiral magnet. Science 323(5916), 915–919 (2009). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1166767",{"doi":2409},"10.1126\u002Fscience.1166767",{"id":26,"text":2411,"url":26,"identifiers":2412},"Neubauer, A., Pfleiderer, C., Binz, B., Rosch, A., Ritz, R., Niklowitz, P.G., Böni, P.: Topological Hall effect in the $$A$$ phase of MnSi. Phys. Rev. Lett. 102(18), 186602 (2009). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.102.186602",{"doi":2413},"10.1103\u002FPhysRevLett.102.186602",{"id":26,"text":2415,"url":26,"identifiers":2416},"Everschor, K.: Current-induced dynamics of chiral magnetic structures, Ph.D. thesis, Inaugural-Dissertation zur Erlangung des Doktorgrades, Universität zu Köln (2012)",{},{"id":26,"text":2418,"url":26,"identifiers":2419},"Fert, A., Levy, P.M.: Role of anisotropic exchange interactions in determining the properties of spin-glasses. Phys. Rev. Lett. 44(23), 1538–1541 (1980). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.44.1538",{"doi":2420},"10.1103\u002FPhysRevLett.44.1538",{"id":26,"text":2422,"url":26,"identifiers":2423},"Fert, A.R.: Magnetic and transport properties of metallic multilayers. Mater. Sci. Forum 59–60, 439–480 (1990). https:\u002F\u002Fdoi.org\u002F10.4028\u002Fwww.scientific.net\u002FMSF.59-60.439",{"doi":2424},"10.4028\u002Fwww.scientific.net\u002FMSF.59-60.439",{"id":26,"text":2426,"url":26,"identifiers":2427},"Jonietz, F., Mühlbauer, S., Pfleiderer, C., Neubauer, A., Münzer, W., Bauer, A., Adams, T., Georgii, R., Böni, P., Duine, R.A., Everschor, K., Garst, M., Rosch, A.: Spin transfer torques in MnSi at ultralow current densities. Science 330(6011), 1648–1651 (2010). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.1195709",{"doi":2428},"10.1126\u002Fscience.1195709",{"id":26,"text":2430,"url":26,"identifiers":2431},"Everschor-Sitte, K., Masell, J., Reeve, R.M., Kläui, M.: Perspective: magnetic skyrmions—overview of recent progress in an active research field. J. Appl. Phys. 124(24), 240901 (2018). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.5048972",{"doi":2432},"10.1063\u002F1.5048972",{"id":26,"text":2434,"url":26,"identifiers":2435},"Schulz, T., Ritz, R., Bauer, A., Halder, M., Wagner, M., Franz, C., Pfleiderer, C., Everschor, K., Garst, M., Rosch, A.: Emergent electrodynamics of skyrmions in a chiral magnet. Nat. Phys. 8(4), 301–304 (2012). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnphys2231",{"doi":2436},"10.1038\u002Fnphys2231",{"id":26,"text":2438,"url":26,"identifiers":2439},"Tomasello, R., Martinez, E., Zivieri, R., Torres, L., Carpentieri, M., Finocchio, G.: A strategy for the design of skyrmion racetrack memories. Sci. Rep. 4(6784), 1–7 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep06784",{"doi":2440},"10.1038\u002Fsrep06784",{"id":26,"text":2442,"url":26,"identifiers":2443},"Zhang, X., Zhao, G.P., Fangohr, H., Liu, J.P., Xia, W.X., Xia, J., Morvan, F.J.: Skyrmion-skyrmion and skyrmion-edge repulsions in skyrmion-based racetrack memory. Sci. Rep. 5(7643), 1–6 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep07643",{"doi":2444},"10.1038\u002Fsrep07643",{"id":26,"text":2446,"url":26,"identifiers":2447},"Bessarab, P.F., Müller, G.P., Lobanov, I.S., Rybakov, F.N., Kiselev, N.S., Jónsson, H., Uzdin, V.M., Blügel, S., Bergqvist, L., Delin, A.: Lifetime of racetrack skyrmions. Sci. Rep. 8(3433), 1–10 (2018). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41598-018-21623-3",{"doi":2448},"10.1038\u002Fs41598-018-21623-3",{"id":26,"text":2450,"url":26,"identifiers":2451},"Chen, X., Kang, W., Zhu, D., Zhang, X., Lei, N., Zhang, Y., Zhou, Y., Zhao, W.: Skyrmion dynamics in width-varying nanotracks and implications for skyrmionic applications. Appl. Phys. Lett. 111(20), 202406 (2017). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.5005953",{"doi":2452},"10.1063\u002F1.5005953",{"id":26,"text":2454,"url":26,"identifiers":2455},"Hrabec, A., Sampaio, J., Belmeguenai, M., Gross, I., Weil, R., Chérif, S.M., Stashkevich, A., Jacques, V., Thiaville, A., Rohart, S.: Current-induced skyrmion generation and dynamics in symmetric bilayers. Nat. Commun. 8(15765), 1–6 (2017). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fncomms15765",{"doi":2456},"10.1038\u002Fncomms15765",{"id":26,"text":2458,"url":26,"identifiers":2459},"Cortés-Ortuño, D., Wang, W., Beg, M., Pepper, R.A., Bisotti, M.-A., Carey, R., Vousden, M., Kluyver, T., Hovorka, O., Fangohr, H.: Thermal stability and topological protection of skyrmions in nanotracks. Sci. Rep. 7(4060), 1–13 (2017). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41598-017-03391-8",{"doi":2460},"10.1038\u002Fs41598-017-03391-8",{"id":26,"text":2462,"url":26,"identifiers":2463},"Woo, S., Litzius, K., Krüger, B., Im, M.-Y., Caretta, L., Richter, K., Mann, M., Krone, A., Reeve, R.M., Weigand, M., Agrawal, P., Lemesh, I., Mawass, M.-A., Fischer, P., Kläui, M., Beach, G.S.D.: Observation of room-temperature magnetic skyrmions and their current-driven dynamics in ultrathin metallic ferromagnets. Nat. Mater. 15(5), 501–506 (2016). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat4593",{"doi":2464},"10.1038\u002Fnmat4593",{"id":26,"text":2466,"url":26,"identifiers":2467},"Jiang, W., Upadhyaya, P., Zhang, W., Yu, G., Jungfleisch, M.B., Fradin, F.Y., Pearson, J.E., Tserkovnyak, Y., Wang, K.L., Heinonen, O., Te Velthuis, S.G.E., Hoffmann, A.: Blowing magnetic skyrmion bubbles. Science 349(6245), 283–286 (2015). https:\u002F\u002Fdoi.org\u002F10.1126\u002Fscience.aaa1442",{"doi":2468},"10.1126\u002Fscience.aaa1442",{"id":26,"text":2470,"url":26,"identifiers":2471},"Yu, G., Upadhyaya, P., Shao, Q., Wu, H., Yin, G., Li, X., He, C., Jiang, W., Han, X., Amiri, P.K., Wang, K.L.: Room-temperature skyrmion shift device for memory application. Nano Lett. 17(1), 261–268 (2017). https:\u002F\u002Fdoi.org\u002F10.1021\u002Facs.nanolett.6b04010",{"doi":2472},"10.1021\u002Facs.nanolett.6b04010",{"id":26,"text":2474,"url":26,"identifiers":2475},"Zang, J., Mostovoy, M., Han, J.H., Nagaosa, N.: Dynamics of skyrmion crystals in metallic thin films. Phys. Rev. Lett. 107(13), 136804 (2011). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.107.136804",{"doi":2476},"10.1103\u002FPhysRevLett.107.136804",{"id":26,"text":2478,"url":26,"identifiers":2479},"Zhang, X., Zhou, Y., Ezawa, M.: Antiferromagnetic skyrmion: stability, creation and manipulation. Sci. Rep. 6(24795), 1–8 (2016). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep24795",{"doi":2480},"10.1038\u002Fsrep24795",{"id":26,"text":2482,"url":26,"identifiers":2483},"Barker, J., Tretiakov, O.A.: Static and dynamical properties of antiferromagnetic skyrmions in the presence of applied current and temperature. Phys. Rev. Lett. 116(14), 147203 (2016). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.116.147203",{"doi":2484},"10.1103\u002FPhysRevLett.116.147203",{"id":26,"text":2486,"url":26,"identifiers":2487},"Kim, B.S., Shapere, A.D.: Skyrmions and Hall transport. Phys. Rev. Lett. 117(11), 116805 (2016). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevLett.117.116805",{"doi":2488},"10.1103\u002FPhysRevLett.117.116805",{"id":26,"text":2490,"url":26,"identifiers":2491},"Everschor-Sitte, K., Sitte, M., Valet, T., Abanov, A., Sinova, J.: Skyrmion production on demand by homogeneous DC currents. New J. Phys. 19(9), 092001 (2017). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1367-2630\u002Faa8569",{"doi":2492},"10.1088\u002F1367-2630\u002Faa8569",{"id":26,"text":2494,"url":26,"identifiers":2495},"Zhang, X., Ezawa, M., Zhou, Y.: Magnetic skyrmion logic gates: conversion, duplication and merging of skyrmions. Sci. Rep. 5(9400), 1–8 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep09400",{"doi":2496},"10.1038\u002Fsrep09400",{"id":26,"text":2498,"url":26,"identifiers":2499},"Nakatani, Y., Yamada, K., Hirohata, A.: Switching of Skyrmion chirality by local heating. Sci. Rep. 9(13475), 1–7 (2019). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41598-019-49875-7",{"doi":2500},"10.1038\u002Fs41598-019-49875-7",{"id":26,"text":2502,"url":26,"identifiers":2503},"Finocchio, G., Ricci, M., Tomasello, R., Giordano, A., Lanuzza, M., Puliafito, V., Burrascano, P., Azzerboni, B., Carpentieri, M.: Skyrmion based microwave detectors and harvesting. Appl. Phys. Lett. 107(26), 262401 (2015). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4938539",{"doi":2504},"10.1063\u002F1.4938539",{"id":26,"text":2506,"url":26,"identifiers":2507},"Carpentieri, M., Tomasello, R., Zivieri, R., Finocchio, G.: Topological, non-topological and instanton droplets driven by spin-transfer torque in materials with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya Interaction. Sci. Rep. 5(16184), 1–8 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep16184",{"doi":2508},"10.1038\u002Fsrep16184",{"id":26,"text":2510,"url":26,"identifiers":2511},"Garcia-Sanchez, F., Sampaio, J., Reyren, N., Cros, V., Kim, J.-V.: A skyrmion-based spin-torque nano-oscillator. New J. Phys. 18(7), 075011 (2016). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1367-2630\u002F18\u002F7\u002F075011",{"doi":2512},"10.1088\u002F1367-2630\u002F18\u002F7\u002F075011",{"id":26,"text":2514,"url":26,"identifiers":2515},"Medlej, I., Hamadeh, A., Hassan, F.E.H.: Skyrmion based random bit generator. Physica B 579, 411900 (2020). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.physb.2019.411900",{"doi":2516},"10.1016\u002Fj.physb.2019.411900",{"id":26,"text":2518,"url":26,"identifiers":2519},"Yao, Y., Chen, X., Kang, W., Zhang, Y., Zhao, W.: Thermal brownian motion of skyrmion for true random number generation. IEEE Trans. Electron Devices 67(6), 2553–2558 (2020). https:\u002F\u002Fdoi.org\u002F10.1109\u002FTED.2020.2989420",{"doi":2520},"10.1109\u002FTED.2020.2989420",{"id":26,"text":2522,"url":26,"identifiers":2523},"Song, K.M., Jeong, J.-S., Pan, B., Zhang, X., Xia, J., Cha, S., Park, T.-E., Kim, K., Finizio, S., Raabe, J., Chang, J., Zhou, Y., Zhao, W., Kang, W., Ju, H., Woo, S.: Skyrmion-based artificial synapses for neuromorphic computing. Nat. Electron. 3(3), 148–155 (2020). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fs41928-020-0385-0",{"doi":2524},"10.1038\u002Fs41928-020-0385-0",{"id":26,"text":2526,"url":26,"identifiers":2527},"Li, S., Kang, W., Zhang, X., Nie, T., Zhou, Y., Wang, K.L., Zhao, W.: Magnetic skyrmions for unconventional computing. Mater. Horiz. https:\u002F\u002Fdoi.org\u002F10.1039\u002FD0MH01603A",{"doi":2528},"10.1039\u002FD0MH01603A",{"id":26,"text":2530,"url":26,"identifiers":2531},"Back, C., Cros, V., Ebert, H., Everschor-Sitte, K., Fert, A., Garst, M., Ma, T., Mankovsky, S., Monchesky, T.L., Mostovoy, M., Nagaosa, N., Parkin, S.S.P., Pfleiderer, C., Reyren, N., Rosch, A., Taguchi, Y., Tokura, Y., von Bergmann, K., Zang, J.: The 2020 skyrmionics roadmap. J. Phys. D Appl. Phys. 53(36), 363001 (2020). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1361-6463\u002Fab8418",{"doi":2532},"10.1088\u002F1361-6463\u002Fab8418",{"id":2534,"createTime":2535,"updateTime":2536,"relativeEntities":2537,"slug":2538,"properties":2539,"entityType":836,"verifyStatus":25,"verifyTime":2536,"verifyNote":837,"syncStatus":28,"languages":2550,"translateLanguages":26,"viewCount":36,"primaryUrl":2551,"fullTextUrl":26,"authors":2552,"publicationType":881,"publisherRelationship":2662,"citationCount":357,"citationInfo":2691,"publishDate":2693,"publishYear":2694,"citationAnalyzeStatus":915,"lastCitationAnalyze":2695,"indexDatabases":26,"openAccess":26,"references":2696,"isForceReanalyzing":1221},"fc1f7bac-7423-48d9-a98a-956da3937413","2024-04-14T16:18:08.063+00:00","2025-02-07T13:21:30.900+00:00",[],"Performance-enhancement-of-CIGS-based-solar-cells-by-incorporating-an-ultrathin-BaSi2-BSF-layer",{"mag":2540,"keywords":2542,"openalex":2543,"abstract":2545,"title":2546,"doi":2548},{"VOID":2541},"2994752677",{},{"VOID":2544},"W2994752677",{},{"EN":2547},"Performance enhancement of CIGS-based solar cells by incorporating an ultrathin BaSi2 BSF layer",{"VOID":2549},"10.1007\u002Fs10825-019-01433-0",[102],"http:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-019-01433-0",[2553,2571,2590,2606,2630,2646],{"id":2554,"sortIndex":59,"researcher":26,"roles":2555,"affiliations":2556,"properties":2566},"5d0c938f-b96f-40bb-8c06-74e2fc398d66",[],[2557],{"id":26,"sortIndex":36,"affiliation":2558,"properties":26},{"id":2559,"createTime":2560,"updateTime":2560,"relativeEntities":2561,"slug":2562,"properties":2563,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"99ecd96a-9d94-4ff3-b21c-33ef0f62f1e9","2024-04-19T01:49:38.035+00:00",[],"Institute-of-Electronics-Atomic-Energy-Research-Establishment-Bangladesh-Atomic-Energy-Commission-Dhaka-Bangladesh",{"title":2564},{"EN":2565},"Institute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka, Bangladesh",{"openalex":2567,"title":2569},{"VOID":2568},"A5012672524",{"EN":2570},"Md. Firoz Pervez",{"id":2572,"sortIndex":114,"researcher":26,"roles":2573,"affiliations":2574,"properties":2583},"48d6ad0f-71be-457d-a488-0b3f7ceab84d",[],[2575],{"id":26,"sortIndex":36,"affiliation":2576,"properties":26},{"id":2577,"createTime":2578,"updateTime":2578,"relativeEntities":2579,"slug":26,"properties":2580,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"c410f185-5ea3-4f24-bcdc-a228ac213a3d","2023-12-25T02:58:26.775+00:00",[],{"title":2581},{"VI":2582},"Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, Rangpur, Bangladesh",{"openalex":2584,"orcid":2586,"title":2588},{"VOID":2585},"A5060896765",{"VOID":2587},"https:\u002F\u002Forcid.org\u002F0000-0002-7196-1082",{"EN":2589},"Md. Mahabub Alam Moon",{"id":2591,"sortIndex":36,"researcher":26,"roles":2592,"affiliations":2593,"properties":2599},"d0f9f5f8-c310-4cef-936e-4b3892d4b27d",[],[2594],{"id":26,"sortIndex":36,"affiliation":2595,"properties":26},{"id":2577,"createTime":2578,"updateTime":2578,"relativeEntities":2596,"slug":26,"properties":2597,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":2598},{"VI":2582},{"openalex":2600,"orcid":2602,"title":2604},{"VOID":2601},"A5015326173",{"VOID":2603},"https:\u002F\u002Forcid.org\u002F0000-0003-0475-7572",{"EN":2605},"Sayed Rezwanul Islam Biplab",{"id":2607,"sortIndex":111,"researcher":26,"roles":2608,"affiliations":2609,"properties":2623},"bb9cff53-ab9d-43dd-9a68-54b7487041d7",[],[2610,2615],{"id":26,"sortIndex":36,"affiliation":2611,"properties":26},{"id":2577,"createTime":2578,"updateTime":2578,"relativeEntities":2612,"slug":26,"properties":2613,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":2614},{"VI":2582},{"id":26,"sortIndex":36,"affiliation":2616,"properties":26},{"id":2617,"createTime":2618,"updateTime":2618,"relativeEntities":2619,"slug":26,"properties":2620,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"c7fe3222-b3e0-4094-a964-80555de24c0d","2023-12-25T02:58:26.926+00:00",[],{"title":2621},{"VI":2622},"Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, Bangladesh",{"openalex":2624,"orcid":2626,"title":2628},{"VOID":2625},"A5023926716",{"VOID":2627},"https:\u002F\u002Forcid.org\u002F0000-0002-0090-2384",{"EN":2629},"Md. Ferdous Rahman",{"id":2631,"sortIndex":115,"researcher":26,"roles":2632,"affiliations":2633,"properties":2639},"d96582e5-25a9-4059-9c15-8024d8adc6c2",[],[2634],{"id":26,"sortIndex":36,"affiliation":2635,"properties":26},{"id":2577,"createTime":2578,"updateTime":2578,"relativeEntities":2636,"slug":26,"properties":2637,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":2638},{"VI":2582},{"openalex":2640,"orcid":2642,"title":2644},{"VOID":2641},"A5042912123",{"VOID":2643},"https:\u002F\u002Forcid.org\u002F0000-0002-3628-8785",{"EN":2645},"Md. Hasan Ali",{"id":2647,"sortIndex":162,"researcher":26,"roles":2648,"affiliations":2649,"properties":2655},"7d9c3ad8-fea7-44a4-a21c-e17763a902f7",[],[2650],{"id":26,"sortIndex":36,"affiliation":2651,"properties":26},{"id":2617,"createTime":2618,"updateTime":2618,"relativeEntities":2652,"slug":26,"properties":2653,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":2654},{"VI":2622},{"openalex":2656,"orcid":2658,"title":2660},{"VOID":2657},"A5048919274",{"VOID":2659},"https:\u002F\u002Forcid.org\u002F0000-0001-7167-8634",{"EN":2661},"Jaker Hossain",{"url":26,"publisher":2663,"properties":26},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":2664,"slug":663,"properties":2665,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":2669,"manageAffiliations":2670,"indexDatabases":2671,"url":26,"thumbnailPath":26,"statistic":2686,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":2666,"eissn":2667,"title":2668},{"VOID":666},{"VOID":668},{"EN":670},[],[],[2672,2679],{"id":727,"indexDatabase":2673,"url":740,"indexYears":741,"academicFieldIds":2678,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":2674,"label":2675,"description":2676,"key":737,"publicationTags":2677,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":2680,"url":764,"indexYears":26,"academicFieldIds":2685,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":2681,"label":2682,"description":2683,"key":760,"publicationTags":2684,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":2687,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":2688,"totalCitation":782,"totalCitationByYear":2689,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":2690,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"total":357,"publishYear":26,"statisticByYear":2692},{"2020":111,"2021":356,"2022":516,"2023":397,"2024":158},"2020-03-01",2020,"2024-04-15T06:48:10.524+00:00",[2697,2701,2705,2709,2713,2717,2721,2725,2729,2733,2737,2741,2744,2748,2752,2756,2760,2764,2768,2772,2776,2780,2783,2787,2791,2795,2799,2803,2806,2810,2814,2817,2821,2825,2829,2833,2837,2841,2845,2849,2853,2857,2860],{"id":26,"text":2698,"url":26,"identifiers":2699},"Alhammadi, S., Park, H., Kim, W.K.: Optimization of intrinsic ZnO thickness in Cu(In, Ga)Se2-based thin film solar cells. Materials (2019). https:\u002F\u002Fdoi.org\u002F10.3390\u002Fma12091365",{"doi":2700},"10.3390\u002Fma12091365",{"id":26,"text":2702,"url":26,"identifiers":2703},"Bouich, A., Hartiti, B., Ullah, S., Ullah, H., Touhami, M.E., Santos, D.M.F., Mari, B.: Experimental, theoretical, and numerical simulation of the performance of CuInxGa(1–x)Se2-based solar cells. Optik (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.ijleo.2019.02.067",{"doi":2704},"10.1016\u002Fj.ijleo.2019.02.067",{"id":26,"text":2706,"url":26,"identifiers":2707},"Moon, M.M.A., Rahman, M.F., Hossain, J., Ismail, A.B.M.: Comparative study of the second generation a-Si:H, CdTe, and CIGS thin-film solar cells. Adv. Mater. Res. (2019). https:\u002F\u002Fdoi.org\u002F10.4028\u002Fwww.scientific.net\u002FAMR.1154.102",{"doi":2708},"10.4028\u002Fwww.scientific.net\u002FAMR.1154.102",{"id":26,"text":2710,"url":26,"identifiers":2711},"Candelise, C., Spiers, J.F., Gross, R.J.K.: Materials availability for thin film (TF) PV technologies development: a real concern? Renew. Sustain. Energy Rev. (2011). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.rser.2011.06.012",{"doi":2712},"10.1016\u002Fj.rser.2011.06.012",{"id":26,"text":2714,"url":26,"identifiers":2715},"Heriche, H., Rouabah, Z., Bouarissa, N.: New ultra thin CIGS structure solar cells using SCAPS simulation program. Int. J. Hydrogen Energy (2017). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.ijhydene.2017.02.099",{"doi":2716},"10.1016\u002Fj.ijhydene.2017.02.099",{"id":26,"text":2718,"url":26,"identifiers":2719},"Guirdjebaye, N., Ouédraogo, S., Ngoupo, A.T., Tcheum, G.L.M., Ndjaka, J.M.B.: Junction configurations and their impacts on Cu(In,Ga)Se2 based solar cells performances. Opto-Electron. Rev. (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.opelre.2019.02.001",{"doi":2720},"10.1016\u002Fj.opelre.2019.02.001",{"id":26,"text":2722,"url":26,"identifiers":2723},"Oyedele, S.O., Soucase, B.M., Aka, B.: Numerical simulation and performance optimization of Cu(In,Ga)Se2 solar cells. IOSR J. Appl. Phys. (2016). https:\u002F\u002Fdoi.org\u002F10.9790\u002F4861-0804040111",{"doi":2724},"10.9790\u002F4861-0804040111",{"id":26,"text":2726,"url":26,"identifiers":2727},"Ando, Y., Ishizuka, S., Wang, S., Chen, J., Islam, M.M., Shibata, H., Akimoto, K., Sakurai, T.: Relationship between bandgap grading and carrier recombination for Cu(In,Ga)Se2-based solar cells. Jpn. J. Appl. Phys. (2018). https:\u002F\u002Fdoi.org\u002F10.7567\u002FJJAP.57.08RC08",{"doi":2728},"10.7567\u002FJJAP.57.08RC08",{"id":26,"text":2730,"url":26,"identifiers":2731},"Ramanathan, K., Contreras, M.A., Perkins, C.L., Asher, S., Hasoon, F.S., Keane, J., Young, D., Romero, M., Metzger, W., Noufi, R., Ward, J., Duda, A.: Properties of 19.2% efficiency ZnO\u002FCdS\u002FCuInGaSe2 thin-film solar cells. Prog. Photovolt. Res. Appl. (2003). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fpip.494",{"doi":2732},"10.1002\u002Fpip.494",{"id":26,"text":2734,"url":26,"identifiers":2735},"Repins, I., Contreras, M.A., Egaas, B., DeHart, C., Scharf, J., Perkins, C.L., To, B., Noufi, R.: 19.9%-efficient ZnO\u002FCdS\u002FCuInGaSe2 solar cell with 81.2% fill factor. Prog. Photovolt. Res. Appl. (2008). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fpip.822",{"doi":2736},"10.1002\u002Fpip.822",{"id":26,"text":2738,"url":26,"identifiers":2739},"Green, M.A., Hishikawa, Y., Dunlop, E.D., Levi, D.H., Hohl-Ebinger, J., Yoshita, M., Ho-Baillie, A.W.Y.: Solar cell efficiency tables (version 53). Prog. Photovolt. Res. Appl. (2019). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fpip.3102",{"doi":2740},"10.1002\u002Fpip.3102",{"id":26,"text":2742,"url":26,"identifiers":2743},"Daoudia, A.K., Hassouani, Y.E., Benami, A.: Investigation of the effect of thickness, band gap and temperature on the efficiency of CIGS solar cells through SCAPS-1D. Int. J. Eng. Tech. Res. (IJETR) 6, 71–75 (2016)",{},{"id":26,"text":2745,"url":26,"identifiers":2746},"Mostefaoui, M., Mazari, H., Khelifi, S., Bouraiou, A., Dabou, R.: Simulation of high efficiency CIGS solar cells with SCAPS-1D software. Energy Proc. (2015). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.egypro.2015.07.809",{"doi":2747},"10.1016\u002Fj.egypro.2015.07.809",{"id":26,"text":2749,"url":26,"identifiers":2750},"Robin, M.S.R., Mansoor, M., Rasmi, M., Sarkar, M.S.Z., Rabbi, A.S.M., Mamun, A.: Numerical modeling and analysis of ultra thin film Cu(In,Ga)Se2 solar cell using SCAPS-1D. In: International Conference on Electrical Engineering and Information and Communication Technology (iCEEiCT) (IEEE), 22–24th Sept. 2016, MIST, Dhaka, Bangladesh. https:\u002F\u002Fdoi.org\u002F10.1109\u002FCEEICT.2016.7873169",{"doi":2751},"10.1109\u002FCEEICT.2016.7873169",{"id":26,"text":2753,"url":26,"identifiers":2754},"Benabbas, S., Rouabah, Z., Heriche, H., Chelali, N.: A numerical study of high efficiency ultra-thin CdS\u002FCIGS solar cells. Afr. J. Sci. Technol. Innov. Dev. (2016). https:\u002F\u002Fdoi.org\u002F10.1080\u002F20421338.2015.1118929",{"doi":2755},"10.1080\u002F20421338.2015.1118929",{"id":26,"text":2757,"url":26,"identifiers":2758},"Sylla, A., Touré, S., Vilcot, J.-P.: Numerical modeling and simulation of CIGS-based solar cells with ZnS buffer layer. Open J. Model. Simul. (2017). https:\u002F\u002Fdoi.org\u002F10.4236\u002Fojmsi.2017.54016",{"doi":2759},"10.4236\u002Fojmsi.2017.54016",{"id":26,"text":2761,"url":26,"identifiers":2762},"AlZoubi, T., Moustafa, M.: Numerical optimization of absorber and CdS buffer layers in CIGS solar cells using SCAPS. Int. J. Smart Grid Clean Energy (2019). https:\u002F\u002Fdoi.org\u002F10.12720\u002Fsgce.8.3.291-298",{"doi":2763},"10.12720\u002Fsgce.8.3.291-298",{"id":26,"text":2765,"url":26,"identifiers":2766},"Kohara, N., Nishiwaki, S., Hashimoto, Y., Negami, T., Wada, T.: Electrical properties of the Cu(In,Ga)Se2\u002FMoSe2\u002FMo structure. Sol. Energy Mater. Sol. Cells (2001). https:\u002F\u002Fdoi.org\u002F10.1016\u002FS0927-0248(00)00283-X",{"doi":2767},"10.1016\u002FS0927-0248(00)00283-X",{"id":26,"text":2769,"url":26,"identifiers":2770},"Ahamed, E.M.K.I., Bhowmik, S., Matin, M.A., Amin, N.: Highly efficient ultra thin Cu(In,Ga)Se2 solar cell with tin Selenide BSF. In: 2017 International Conference on Electrical, Computer and Communication Engineering, February 16–18, 2017, Cox’s Bazar, Bangladesh. IEEE. https:\u002F\u002Fdoi.org\u002F10.1109\u002FECACE.2017.7912942",{"doi":2771},"10.1109\u002FECACE.2017.7912942",{"id":26,"text":2773,"url":26,"identifiers":2774},"Benabbas, S., Heriche, H., Rouabah, Z., Chelali, N.: Enhancing the efficiency of CIGS thin film solar cells by inserting novel back surface field (SnS) layer. In: 2014 North African Workshop on Dielectric Materials for Photovoltaic Systems, October 26–27, 2014, Algeria. IEEE. https:\u002F\u002Fdoi.org\u002F10.1109\u002FNAWDMPV.2014.6997611",{"doi":2775},"10.1109\u002FNAWDMPV.2014.6997611",{"id":26,"text":2777,"url":26,"identifiers":2778},"Moon, M.M.A., Ali, M.H., Rahman, M.F., Kuddus, A., Hossain, J., Ismail, A.B.M.: Investigation of thin-film p-BaSi2\u002Fn-CdS heterostructure towards semiconducting silicide based high efficiency solar cell. Phys. Scr. (2019). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1402-4896\u002Fab49e8",{"doi":2779},"10.1088\u002F1402-4896\u002Fab49e8",{"id":26,"text":2781,"url":26,"identifiers":2782},"Doorene, S.V.: Barium disilicide: Development of a novel, low cost and earth abundant absorber material for thin film solar cell applications. MS Thesis, Sustainable Energy Technology, Delft University of Technology, Delft, Netherlands, June 6, 2017. https:\u002F\u002Frepository.tudelft.nl\u002Fislandora\u002Fobject\u002Fuuid%3A177b86f2-cb70-4e74-b02b-b0ee421c7e36 (2017). Accessed 25 July 2019",{},{"id":26,"text":2784,"url":26,"identifiers":2785},"Khan, M.A., Suemasu, T.: Donor and acceptor levels in impurity-doped semiconducting BaSi2 thin films for solar-cell application. Phys. Status Solidi A (2017). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fpssa.201700019",{"doi":2786},"10.1002\u002Fpssa.201700019",{"id":26,"text":2788,"url":26,"identifiers":2789},"Deng, T., Sato, T., Xu, Z., Takabe, R., Yachi, S., Yamashita, Y., Toko, K., Suemasu, T.: p-BaSi2\u002Fn-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111). Appl. Phys. Express (2018). https:\u002F\u002Fdoi.org\u002F10.7567\u002Fapex.11.062301",{"doi":2790},"10.7567\u002Fapex.11.062301",{"id":26,"text":2792,"url":26,"identifiers":2793},"Suemasu, T., Usami, N.: Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications. J. Phys. D Appl. Phys. (2017). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1361-6463\u002F50\u002F2\u002F023001",{"doi":2794},"10.1088\u002F1361-6463\u002F50\u002F2\u002F023001",{"id":26,"text":2796,"url":26,"identifiers":2797},"Kodalle, T., Choubrac, L., Arzel, L., Schlatmann, R., Barreau, N., Kaufmann, C.A.: Effects of KF and RbF post deposition treatments on the growth of the CdS buffer layer on CIGS thin films—a comparative study. Sol. Energy Mater. Sol. Cells (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.solmat.2019.109997",{"doi":2798},"10.1016\u002Fj.solmat.2019.109997",{"id":26,"text":2800,"url":26,"identifiers":2801},"Frisk, C., Platzer-Björkman, C., Olsson, J., Szaniawski, P., Wätjen, J.T., Fjällström, V., Salomé, P., Edoff, M.: Optimizing Ga-profiles for highly efficient Cu(In, Ga)Se2 thin film solar cells in simple and complex defect models. J. Phys. D Appl. Phys. (2014). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0022-3727\u002F47\u002F48\u002F485104",{"doi":2802},"10.1088\u002F0022-3727\u002F47\u002F48\u002F485104",{"id":26,"text":2804,"url":26,"identifiers":2805},"Burgelman, M., Decock, K., Niemegeers, A.,Verschraegen, J., Degrave, S.: SCAPS Manual (version: 3.3.07). Department of Electronics and Information Systems, University of Gent, Belgium. http:\u002F\u002Fscaps.elis.ugent.be (2018). Accessed 5 January 2019",{},{"id":26,"text":2807,"url":26,"identifiers":2808},"Dabbabi, S., Nasr, T.B., Kamoun, T.: CIGS solar cells for space applications: numerical simulation of the effect of traps created by high-energy electron and proton irradiation on the performance of solar cells. JOM (2018). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs11837-018-2748-9",{"doi":2809},"10.1007\u002Fs11837-018-2748-9",{"id":26,"text":2811,"url":26,"identifiers":2812},"Huang, J., Lee, K., Tseng, Y.: Analysis of the high conversion efficiencies ß-FeSi2 and BaSi2 n-i-p thin film solar cells. J. Nanomater. (2014). https:\u002F\u002Fdoi.org\u002F10.1155\u002F2014\u002F238291",{"doi":2813},"10.1155\u002F2014\u002F238291",{"id":26,"text":2815,"url":26,"identifiers":2816},"Gloeckler, M.: Device physics of Cu(In, Ga)Se2 thin-film solar cells. Ph.D. dissertation, Colorado State University, Fort Collins (2005)",{},{"id":26,"text":2818,"url":26,"identifiers":2819},"Nakada, T., Mizutani, M.: 18% efficiency Cd-free Cu(In,Ga)Se2 thin film solar cells fabricated using chemical bath deposition (CBD)-ZnS buffer layers. Jpn. J. Appl. Phys. (2002). https:\u002F\u002Fdoi.org\u002F10.1143\u002FJJAP.41.L165",{"doi":2820},"10.1143\u002FJJAP.41.L165",{"id":26,"text":2822,"url":26,"identifiers":2823},"Jackson, P., Wuerz, R., Hariskos, D., Lotter, E., Witte, W., Powalla, M.: Effects of heavy alkali elements in Cu(In, Ga)Se2 solar cells with efficiencies up to 22.6%. Phys. Status Solidi Rapid Res. Lett. (2016). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fpssr.201600199",{"doi":2824},"10.1002\u002Fpssr.201600199",{"id":26,"text":2826,"url":26,"identifiers":2827},"Green, M.A., Dunlop, E.D., Levi, D.H., Hohl-Ebinger, J., Yoshita, M., Ho-Baillie, A.W.Y.: Solar cell efficiency tables (version 54). Prog. Photovolt. Res. Appl. (2019). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fpip.3171",{"doi":2828},"10.1002\u002Fpip.3171",{"id":26,"text":2830,"url":26,"identifiers":2831},"Fridolin, T.N., Maurel, D.K.G., Ejuh, G.W., Bénédicte, T.T., Marie, N.J.: Highlighting some layers properties in performances optimization of CIGSe based solar cells: case of Cu(In, Ga)Se–ZnS. J. King Saud Univ. Sci (2018). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jksus.2018.03.026",{"doi":2832},"10.1016\u002Fj.jksus.2018.03.026",{"id":26,"text":2834,"url":26,"identifiers":2835},"Yang, X., Chen, B., Chen, J., Zhang, Y., Liu, W., Sun, Y.: ZnS thin film functionalized as back surface field in Si solar cells. Mater. Sci. Semicond. Process. (2018). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.mssp.2017.08.011",{"doi":2836},"10.1016\u002Fj.mssp.2017.08.011",{"id":26,"text":2838,"url":26,"identifiers":2839},"Kaminski, A., Vandelle, B., Fave, A., Boyeaux, J.P., Nam, L.Q., Monna, R., Sarti, D., Laugier, A.: Aluminium BSF in silicon solar cells. Sol. Energ. Mater. Sol. Cells. (2002). https:\u002F\u002Fdoi.org\u002F10.1016\u002FS0927-0248(01)00185-4",{"doi":2840},"10.1016\u002FS0927-0248(01)00185-4",{"id":26,"text":2842,"url":26,"identifiers":2843},"Kuddus, A., Rahman, M.F., Ahmmed, S., Hossain, J., Ismail, A.B.M.: Role of facile synthesized V2O5 as hole transport layer for CdS\u002FCdTe heterojunction solar cell: validation of simulation using experimental data. Superlattices Microstruct. (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.spmi.2019.106168",{"doi":2844},"10.1016\u002Fj.spmi.2019.106168",{"id":26,"text":2846,"url":26,"identifiers":2847},"Benzetta, A.H., Abderrezek, M., Djeghlal, M.E.: Contribution to improve the performances of Cu2ZnSnS4 thin-film solar cell via a back-surface field layer. Optik (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.ijleo.2018.12.048",{"doi":2848},"10.1016\u002Fj.ijleo.2018.12.048",{"id":26,"text":2850,"url":26,"identifiers":2851},"Sohid, S.B., Kabalan, A.: Numerical analysis of ZnTe based solar cell with Sb2Te3 back surface field layer using SCAPS-1D. In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, June 10–15, 2018, USA. IEEE. https:\u002F\u002Fdoi.org\u002F10.1109\u002Fpvsc.2018.8547800",{"doi":2852},"10.1109\u002Fpvsc.2018.8547800",{"id":26,"text":2854,"url":26,"identifiers":2855},"Paul, D.I.: Experimental characterisation of photovoltaic modules with cells connected in different configurations to address nonuniform illumination effect. J. Renew. Energy (2019). https:\u002F\u002Fdoi.org\u002F10.1155\u002F2019\u002F5168259",{"doi":2856},"10.1155\u002F2019\u002F5168259",{"id":26,"text":2858,"url":26,"identifiers":2859},"Series Resistance. https:\u002F\u002Fwww.pveducation.org\u002Fpvcdrom\u002Fsolar-cell-operation\u002Fseries-resistance (2019). Accessed 15 July 2019",{},{"id":26,"text":2861,"url":26,"identifiers":2862},"Omrani, M.K., Minbashi, M., Memarian, N., Kim, D.H.: Improve the performance of CZTSSe solar cells by applying a SnS BSF layer. Solid-State Electron. (2018). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.sse.2017.12.004",{"doi":2863},"10.1016\u002Fj.sse.2017.12.004",{"id":2865,"createTime":2866,"updateTime":2867,"relativeEntities":2868,"slug":2869,"properties":2870,"entityType":836,"verifyStatus":25,"verifyTime":2867,"verifyNote":837,"syncStatus":28,"languages":2881,"translateLanguages":26,"viewCount":36,"primaryUrl":2882,"fullTextUrl":26,"authors":2883,"publicationType":881,"publisherRelationship":2941,"citationCount":245,"citationInfo":2977,"publishDate":2979,"publishYear":2980,"citationAnalyzeStatus":28,"lastCitationAnalyze":26,"indexDatabases":26,"openAccess":26,"references":2981,"isForceReanalyzing":1221},"17757cae-f49b-4bd0-a37d-ed5b00db33e5","2024-04-21T12:55:00.393+00:00","2025-01-28T09:23:23.328+00:00",[],"Theoretical-designing-of-novel-heterocyclic-azo-dyes-for-dye-sensitized-solar-cells",{"mag":2871,"keywords":2873,"openalex":2874,"abstract":2876,"title":2877,"doi":2879},{"VOID":2872},"2063910761",{},{"VOID":2875},"W2063910761",{},{"EN":2878},"Theoretical designing of novel heterocyclic azo dyes for dye sensitized solar cells",{"VOID":2880},"10.1007\u002Fs10825-014-0628-2",[102],"http:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-014-0628-2",[2884,2904,2926],{"id":2885,"sortIndex":115,"researcher":26,"roles":2886,"affiliations":2887,"properties":2897},"bc64d4e9-1431-45fb-84ac-863982a172c0",[],[2888],{"id":2889,"sortIndex":36,"affiliation":2890,"properties":26},"2af2cc01-b843-4b34-853b-8b8e5ba663d1",{"id":2891,"createTime":2892,"updateTime":2892,"relativeEntities":2893,"slug":26,"properties":2894,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"df905902-5cc8-44c3-9341-3d71abfa880d","2024-01-17T18:28:16.686+00:00",[],{"title":2895},{"VI":2896},"Deanship of scientific research, College of Engineering, King Saud University, PO Box 800, Riyadh 11421, Saudi Arabia",{"openalex":2898,"orcid":2900,"title":2902},{"VOID":2899},"A5015561526",{"VOID":2901},"https:\u002F\u002Forcid.org\u002F0000-0001-5928-9257",{"EN":2903},"Salah Ud‐Din Khan",{"id":2905,"sortIndex":36,"researcher":26,"roles":2906,"affiliations":2907,"properties":2919},"910a3539-71d9-4f31-b9f8-422837d35f35",[],[2908],{"id":2909,"sortIndex":36,"affiliation":2910,"properties":26},"255ba628-898a-46c1-abdf-87700ee3d213",{"id":2911,"createTime":2912,"updateTime":2913,"relativeEntities":2914,"slug":2915,"properties":2916,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"30872d5f-869d-47ad-8087-b6f5dcc3d9d3","2024-01-20T17:03:00.629+00:00","2024-09-20T01:52:46.819+00:00",[],"Department-of-Chemistry-University-of-Sargodha-Sargodha-40100-Pakistan",{"title":2917},{"VI":2918},"Department of Chemistry, University of Sargodha, Sargodha 40100, Pakistan",{"openalex":2920,"orcid":2922,"title":2924},{"VOID":2921},"A5047333790",{"VOID":2923},"https:\u002F\u002Forcid.org\u002F0000-0001-9412-1011",{"EN":2925},"Asif Mahmood",{"id":2927,"sortIndex":114,"researcher":26,"roles":2928,"affiliations":2929,"properties":2936},"f8f99c5c-0dd9-484c-a471-4efe27105f0e",[],[2930],{"id":2931,"sortIndex":36,"affiliation":2932,"properties":26},"1783a4e9-6661-468c-8c04-f236b42daf07",{"id":2891,"createTime":2892,"updateTime":2892,"relativeEntities":2933,"slug":26,"properties":2934,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":2935},{"VI":2896},{"openalex":2937,"title":2939},{"VOID":2938},"A5068221435",{"EN":2940},"Usman Ali Rana",{"url":26,"publisher":2942,"properties":2970},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":2943,"slug":663,"properties":2944,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":2948,"manageAffiliations":2949,"indexDatabases":2950,"url":26,"thumbnailPath":26,"statistic":2965,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":2945,"eissn":2946,"title":2947},{"VOID":666},{"VOID":668},{"EN":670},[],[],[2951,2958],{"id":727,"indexDatabase":2952,"url":740,"indexYears":741,"academicFieldIds":2957,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":2953,"label":2954,"description":2955,"key":737,"publicationTags":2956,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":2959,"url":764,"indexYears":26,"academicFieldIds":2964,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":2960,"label":2961,"description":2962,"key":760,"publicationTags":2963,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":2966,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":2967,"totalCitation":782,"totalCitationByYear":2968,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":2969,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"volume":2971,"pages":2973,"issue":2975},{"VOID":2972},"13",{"VOID":2974},"1033-1041",{"VOID":2976},"4",{"total":245,"publishYear":26,"statisticByYear":2978},{"2015":115,"2017":115,"2018":59,"2019":59,"2020":114,"2021":162,"2022":48,"2023":298,"2024":162},"2014-12-01",2014,[2982,2986,2990,2994,2998,3002,3006,3010,3014,3018,3022,3026,3030,3034,3038,3042,3046,3050,3054,3057,3061,3065,3068,3072,3076,3080,3084,3088,3092,3096,3100,3104,3108],{"id":26,"text":2983,"url":26,"identifiers":2984},"O’Regan, B., Gratzel, M.: A low-cost, high-efficiency solar cell based on dye-sensitized colloidal $$\\text{ TiO }_{2}$$ TiO 2 films. Nature 353, 737–740 (1991)",{"doi":2985},"10.1038\u002F353737a0",{"id":26,"text":2987,"url":26,"identifiers":2988},"Abdullah, M.I., Janjua, M.R.S.A., Nazar, M.F., Mahmood, A.: Quantum chemical designing of efficient TC4-based sensitizers by modification of auxiliary donor and $$\\uppi $$ π -spacer. Bull. Chem. Soc. Jpn. 86, 1272–1281 (2013)",{"doi":2989},"10.1246\u002Fbcsj.20130146",{"id":26,"text":2991,"url":26,"identifiers":2992},"Boschloo, G., Hagfeldt, A.: Characteristics of the iodide\u002Ftriiodide redox mediator in dye-sensitized solar cells. Acc. Chem. Res. 42, 1819–1826 (2009)",{"doi":2993},"10.1021\u002Far900138m",{"id":26,"text":2995,"url":26,"identifiers":2996},"Nazeeruddin, M.K., Angelis, F.D., Fantacci, S., Selloni, A., Viscardi, G., Liska, P., Ito, S., Takeru, B., Gratzel, M.: Combined experimental and DFT–TDDFT computational study of photoelectrochemical cell ruthenium sensitizers. J. Am. Chem. Soc. 127, 16835–16847 (2005)",{"doi":2997},"10.1021\u002Fja052467l",{"id":26,"text":2999,"url":26,"identifiers":3000},"Abdullah, M.I., Janjua, M.R.S.A., Mahmood, A., Ali, S., Ali, M.: Quantum chemical designing of efficient sensitizers for dye sensitized solar cells. Bull. Korean Chem. Soc. 34, 2093–2098 (2013)",{"doi":3001},"10.5012\u002Fbkcs.2013.34.7.2093",{"id":26,"text":3003,"url":26,"identifiers":3004},"Mishra, A., Fischer, M.K.R., Bäuerle, P.: Metal-free organic dyes for dye-sensitized solar cells: from structure: property relationships to design rules. Angew. Chem. Int. Ed. Engl. 48, 2474–2499 (2009)",{"doi":3005},"10.1002\u002Fanie.200804709",{"id":26,"text":3007,"url":26,"identifiers":3008},"Zhang, G.L., Bala, H., Cheng, Y.M., Shi, D., Lv, X.J., Yu, Q.J., Wang, P.: High efficiency and stable dye-sensitized solar cells with an organic chromophore featuring a binary $$\\uppi $$ π -conjugated spacer. Chem. Commun. 16, 2198–2200 (2009)",{"doi":3009},"10.1039\u002Fb822325d",{"id":26,"text":3011,"url":26,"identifiers":3012},"Choi, H., Choi, H., Paek, S., Song, K., Kang, M.-S., Ko, J.: Novel organic sensitizers with a quinoline unit for efficient dye-sensitized solar cells. Bull. Korean Chem. Soc. 31, 125–132 (2010)",{"doi":3013},"10.5012\u002Fbkcs.2010.31.01.125",{"id":26,"text":3015,"url":26,"identifiers":3016},"Li, Y.-T., Chen, C.-L., Hsu, Y.-Y., Hsu, H.-C., Chi, Y., Chen, B.-S., Liu, W.-H., Lai, C.-H., Lin, T.-Y., Chou, P.-T.: Donor–acceptor organic sensitizers assembled with isoxazole or its derivative 3-oxopropanenitrile. Tetrahedron 66, 4223–4229 (2010)",{"doi":3017},"10.1016\u002Fj.tet.2010.03.085",{"id":26,"text":3019,"url":26,"identifiers":3020},"Irfan, A., Al-Sehemi, A.: Quantum chemical study in the direction to design efficient donor-bridge-acceptor triphenylamine sensitizers with improved electron injection. J. Mol. Model. 18, 4893–4900 (2012)",{"doi":3021},"10.1007\u002Fs00894-012-1488-y",{"id":26,"text":3023,"url":26,"identifiers":3024},"Al-Eid, M., Limb, S.H., Park, K.-W., Fitzpatrick, B., Han, C.-H., Kwak, K., Hong, K.: Graeme Cooke Facile synthesis of metal-free organic dyes featuring a thienylethynyl spacer for dye sensitized solar cells. Dyes Pigments 104, 197–203 (2014)",{"doi":3025},"10.1016\u002Fj.dyepig.2014.01.004",{"id":26,"text":3027,"url":26,"identifiers":3028},"Lee, W., Choi, J., Namgoong, J.W., Kim, S.H., Sun, K.C., Jeong, S.H., Yoo, K., Ko, M.J., Kim, J.P.: The effect of five-membered heterocyclic bridges and ethoxyphenyl substitution on the performance of phenoxazine-based dye-sensitized solar cells. Dyes Pigments 104, 185–193 (2014)",{"doi":3029},"10.1016\u002Fj.dyepig.2013.12.022",{"id":26,"text":3031,"url":26,"identifiers":3032},"Preat, J., Jacquemin, D., Perpete, E.A.: Towards new efficient dye-sensitised solar cells. Energy Environ. Sci. 3, 891–904 (2010)",{"doi":3033},"10.1039\u002Fc000474j",{"id":26,"text":3035,"url":26,"identifiers":3036},"Tai, C.-K., Chen, Y.-J., Chang, H.-W., Yeh, P.-L., Wang, B.-C.: DFT and TD-DFT investigations of metal-free dye sensitizers for solar cells: effects of electron donors and $$\\uppi $$ π -conjugated linker. Comput. Theor. Chem. 971, 42–50 (2011)",{"doi":3037},"10.1016\u002Fj.comptc.2011.05.036",{"id":26,"text":3039,"url":26,"identifiers":3040},"Abbotto, A., Barolo, C., Bellotto, L., De Angelis, F., Gratzel, M., Manfredi, N., Marinzi, C., Fantacci, S., Yum, J., Nazeeruddin, M.K.: Heteroaromatic conjugated bipyridine based ruthenium sensitizer for efficient dye-sensitized solar cells. Chem. Commun. 42:5318–5320 (2008)",{"doi":3041},"10.1039\u002Fb811378e",{"id":26,"text":3043,"url":26,"identifiers":3044},"Towns, A.D.: Developments in azo disperse dyes derived from heterocyclic diazo components. Dyes Pigments 42, 3–25 (1999)",{"doi":3045},"10.1016\u002FS0143-7208(99)00005-4",{"id":26,"text":3047,"url":26,"identifiers":3048},"Yesodha, S.K., Pillai, C.K.S., Tsutsumi, N.: Stable polymeric materials for nonlinear optics: a review based on azobenzene systems. Prog. Polym. Sci. 29, 45–74 (2004)",{"doi":3049},"10.1016\u002Fj.progpolymsci.2003.07.002",{"id":26,"text":3051,"url":26,"identifiers":3052},"Matharu, A., Jeeva, S., Huddleston, P.R., Ramanujam, P.S.: Synthesis and optical storage properties of a thiophene-based holographic recording medium. J. Mater. Chem. 17, 4477–4482 (2007)",{"doi":3053},"10.1039\u002Fb705648f",{"id":26,"text":3055,"url":26,"identifiers":3056},"Frisch, M.J., Trucks, G.W., Schlegel, H.B., Scuseria, G.E., Robb, M.A., Cheeseman, J.R., Scalmani, G., Barone, V., Mennucci, B., Petersson, G.A., Nakatsuji, H., Caricato, M., Li, X., Hratchian, H.P., Izmaylov, A.F., Bloino, J., Zheng, G., Sonnenberg, J.L., Hada, M., Ehara, M., Toyota, K., Fukuda, R., Hasegawa, J., Ishida, M., Nakajima, T., Honda, Y., Kitao, O., Nakai, H., Vreven, T., Montgomery Jr., J.A., Peralta, P.E., Ogliaro, F., Bearpark, M., Heyd, J.J., Brothers, E., Kudin, K.N., Staroverov, V.N., Kobayashi, R., Normand, J., Raghavachari, K., Rendell, A., Burant, J.C., Iyengar, S.S., Tomasi, J., Cossi, M., Rega, N., Millam, N.J., Klene, M., Knox, J.E., Cross, J.B., Bakken, V., Adamo, C., Jaramillo, J., Gomperts, R., Stratmann, R.E., Yazyev, O., Austin, A.J., Cammi, R., Pomelli, C., Ochterski, J.W., Martin, R.L., Morokuma, K., Zakrzewski, V.G., Voth, G.A., Salvador, P., Dannenberg, J.J., Dapprich, S., Daniels, A.D., Farkas, O., Ortiz, J.V., Cioslowski, J., Fox, D.J.: Gaussian 09, Revision A.1. Gaussian Inc., Wallingford (2009)",{},{"id":26,"text":3058,"url":26,"identifiers":3059},"Dreuw, A., Head-Gordon, M.: Single-reference ab initio methods for the calculation of excited states of large molecules. Chem. Rev. 105, 4009–4037 (2005)",{"doi":3060},"10.1021\u002Fcr0505627",{"id":26,"text":3062,"url":26,"identifiers":3063},"Yanai, T., Tew, D.P., Handy, N.C.: A new hybrid exchange-correlation functional using the Coulomb-attenuating method (CAM-B3LYP). Chem. Phys. Lett. 393, 51–57 (2004)",{"doi":3064},"10.1016\u002Fj.cplett.2004.06.011",{"id":26,"text":3066,"url":26,"identifiers":3067},"Zhang, J., Li, H.-B., Wu, Y., Geng, Y., Duan, Y.-A., Liao, Y., Su, Z.-M.: Chem. J. Chin. Univ. 32, 1343–1348 (2011)",{},{"id":26,"text":3069,"url":26,"identifiers":3070},"Barone, V., Cossi, M.: Quantum calculation of molecular energies and energy gradients in solution by a conductor solvent model. J. Phys. Chem. A 102, 1995–2001 (1998)",{"doi":3071},"10.1021\u002Fjp9716997",{"id":26,"text":3073,"url":26,"identifiers":3074},"Qin, P., Yang, X.C., Chen, R.K., Sun, L.C., Marinado, T., Edvinsson, T., Boschloo, G., Hagfeldt, G.: Influence of $$\\uppi $$ π -conjugation units in organic dyes for dye-sensitized solar cells. J. Phys. Chem. C 111, 1853–1860 (2007)",{"doi":3075},"10.1021\u002Fjp065550j",{"id":26,"text":3077,"url":26,"identifiers":3078},"Gratzel, M.: Photoelectrochemical cells. Nature 414, 338–344 (2001)",{"doi":3079},"10.1038\u002F35104607",{"id":26,"text":3081,"url":26,"identifiers":3082},"Zhang, G.L., Bai, Y., Li, R.Z., Shi, D., Wenger, S., Zakeeruddin, S.M., Gratzel, M., Wang, P.: Employ a bisthienothiophene linker to construct an organic chromophorefor efficient and stable dye-sensitized solar cells. Energy Environ. Sci. 2, 92–95 (2009)",{"doi":3083},"10.1039\u002FB817990E",{"id":26,"text":3085,"url":26,"identifiers":3086},"Qin, C., Clark, A.E.: DFT characterization of the optical and redox properties of natural pigments relevant to dye-sensitized solar cells. Chem. Phys. Lett. 438, 26–30 (2007)",{"doi":3087},"10.1016\u002Fj.cplett.2007.02.063",{"id":26,"text":3089,"url":26,"identifiers":3090},"Hagfeldt, A., Graetzel, M.: Light-induced redox reactions in nanocrystalline systems. Chem. Rev. 95, 49–68 (1995)",{"doi":3091},"10.1021\u002Fcr00033a003",{"id":26,"text":3093,"url":26,"identifiers":3094},"Persson, P., Bergström, R., Ojamäe, L., Lunell, S.: Quantum-chemical studies of metal oxides for photoelectrochemical applications. Adv. Quant. Chem. 41, 203–263 (2002)",{"doi":3095},"10.1016\u002FS0065-3276(02)41054-4",{"id":26,"text":3097,"url":26,"identifiers":3098},"Pearson, R.G.: Absolute electronegativity and hardness: application to inorganic chemistry. Inorg. Chem. 27, 734–740 (1988)",{"doi":3099},"10.1021\u002Fic00277a030",{"id":26,"text":3101,"url":26,"identifiers":3102},"Zhang, C.R., Liu, Z.J., Chen, Y.H., Chen, H.S., Wu, Y.Z., Yuan, L.H.: DFT and TDDFT study on organic dye sensitizers D5, DST and DSS for solar cells. J. Mol. Struct. 899, 86–93 (2009)",{"doi":3103},"10.1016\u002Fj.theochem.2008.12.015",{"id":26,"text":3105,"url":26,"identifiers":3106},"Jung, H.S., Lee, J.K.: Dye sensitized solar cells for economically viable photovoltaicsystems. J. Phys. Chem. Lett. 4, 1682 (2013)",{"doi":3107},"10.1021\u002Fjz400112n",{"id":26,"text":3109,"url":26,"identifiers":3110},"Choi, H., Kamat, P.V.: Know thy nano neighbor. Plasmonic versus electron charging effects of metal nanoparticles in dye-sensitized solar cells. ACS Nano 6, 4418 (2012)",{"doi":3111},"10.1021\u002Fnn301137r",{"id":3113,"createTime":3114,"updateTime":3114,"relativeEntities":3115,"slug":3116,"properties":3117,"entityType":836,"verifyStatus":25,"verifyTime":3114,"verifyNote":837,"syncStatus":28,"languages":3128,"translateLanguages":26,"viewCount":36,"primaryUrl":3129,"fullTextUrl":26,"authors":3130,"publicationType":881,"publisherRelationship":3215,"citationCount":3251,"citationInfo":3252,"publishDate":3254,"publishYear":3255,"citationAnalyzeStatus":28,"lastCitationAnalyze":26,"indexDatabases":26,"openAccess":26,"references":3256,"isForceReanalyzing":1221},"b57ce007-84fc-49f9-b198-31db2a5ec1dd","2024-09-21T13:59:07.227+00:00",[],"Room-temperature-carrier-transport-in-graphene",{"mag":3118,"keywords":3120,"openalex":3121,"abstract":3123,"title":3124,"doi":3126},{"VOID":3119},"2080034166",{},{"VOID":3122},"W2080034166",{},{"EN":3125},"Room temperature carrier transport in graphene",{"VOID":3127},"10.1007\u002Fs10825-009-0278-y",[102],"http:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-009-0278-y",[3131,3153,3170,3185,3200],{"id":3132,"sortIndex":111,"researcher":26,"roles":3133,"affiliations":3134,"properties":3146},"b80e2c05-5222-4e00-a11a-4ebb3f729015",[],[3135],{"id":3136,"sortIndex":36,"affiliation":3137,"properties":26},"56670320-04bf-4fed-ab8e-620beb556987",{"id":3138,"createTime":3139,"updateTime":3140,"relativeEntities":3141,"slug":3142,"properties":3143,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"b1efae45-0b8e-4265-864e-f0e375bb7965","2024-09-12T09:26:35.506+00:00","2024-09-21T13:59:21.962+00:00",[],"Department-of-Electrical-Engineering-and-Center-for-Solid-State-Electronics-Research-Arizona-State-University-Tempe-AZ-85287-USA",{"title":3144},{"EN":3145},"Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287, USA",{"openalex":3147,"orcid":3149,"title":3151},{"VOID":3148},"A5078543343",{"VOID":3150},"https:\u002F\u002Forcid.org\u002F0000-0002-0942-8033",{"EN":3152},"D. K. Ferry",{"id":3154,"sortIndex":59,"researcher":26,"roles":3155,"affiliations":3156,"properties":3163},"d2c4e673-bd24-40c9-813e-778c5f2423f1",[],[3157],{"id":3158,"sortIndex":36,"affiliation":3159,"properties":26},"43d4c129-10d5-4bd6-aa2d-1b4f290b31e4",{"id":3138,"createTime":3139,"updateTime":3140,"relativeEntities":3160,"slug":3142,"properties":3161,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3162},{"EN":3145},{"openalex":3164,"orcid":3166,"title":3168},{"VOID":3165},"A5063905760",{"VOID":3167},"https:\u002F\u002Forcid.org\u002F0000-0002-5206-153X",{"EN":3169},"Nongjian Tao",{"id":3171,"sortIndex":115,"researcher":26,"roles":3172,"affiliations":3173,"properties":3180},"dc9eb29f-a7dc-44ea-acd5-21f56715262c",[],[3174],{"id":3175,"sortIndex":36,"affiliation":3176,"properties":26},"cf3dd0f1-a290-42b3-874c-50fc7f170959",{"id":3138,"createTime":3139,"updateTime":3140,"relativeEntities":3177,"slug":3142,"properties":3178,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3179},{"EN":3145},{"openalex":3181,"title":3183},{"VOID":3182},"A5042778260",{"EN":3184},"F. Chen",{"id":3186,"sortIndex":114,"researcher":26,"roles":3187,"affiliations":3188,"properties":3195},"887340c0-1804-44aa-92fb-1831ef49c011",[],[3189],{"id":3190,"sortIndex":36,"affiliation":3191,"properties":26},"ff471583-29df-4e2c-9bd0-ea53f209bf8c",{"id":3138,"createTime":3139,"updateTime":3140,"relativeEntities":3192,"slug":3142,"properties":3193,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3194},{"EN":3145},{"openalex":3196,"title":3198},{"VOID":3197},"A5015626352",{"EN":3199},"Jilin Xia",{"id":3201,"sortIndex":36,"researcher":26,"roles":3202,"affiliations":3203,"properties":3210},"b313d7ad-b806-43fe-b0b0-a29338abbd74",[],[3204],{"id":3205,"sortIndex":36,"affiliation":3206,"properties":26},"44c59e00-c2ab-4589-8d42-20d32b06642d",{"id":3138,"createTime":3139,"updateTime":3140,"relativeEntities":3207,"slug":3142,"properties":3208,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3209},{"EN":3145},{"openalex":3211,"title":3213},{"VOID":3212},"A5030075031",{"EN":3214},"R. S. Shishir",{"url":26,"publisher":3216,"properties":3244},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":3217,"slug":663,"properties":3218,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":3222,"manageAffiliations":3223,"indexDatabases":3224,"url":26,"thumbnailPath":26,"statistic":3239,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":3219,"eissn":3220,"title":3221},{"VOID":666},{"VOID":668},{"EN":670},[],[],[3225,3232],{"id":727,"indexDatabase":3226,"url":740,"indexYears":741,"academicFieldIds":3231,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":3227,"label":3228,"description":3229,"key":737,"publicationTags":3230,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":3233,"url":764,"indexYears":26,"academicFieldIds":3238,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":3234,"label":3235,"description":3236,"key":760,"publicationTags":3237,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":3240,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":3241,"totalCitation":782,"totalCitationByYear":3242,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":3243,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"volume":3245,"pages":3247,"issue":3249},{"VOID":3246},"8",{"VOID":3248},"43-50",{"VOID":3250},"2",55,{"total":3251,"publishYear":26,"statisticByYear":3253},{"2012":50,"2013":50,"2015":59,"2016":162,"2017":111,"2019":115,"2020":111,"2021":111,"2022":59,"2023":59,"2024":114},"2009-06-01",2009,[3257,3260,3263,3266,3270,3274,3278,3280,3284,3288,3292,3296,3300,3304,3308,3312,3316,3320,3324,3328,3331,3335,3339,3343,3347,3351,3355,3358,3362,3366,3370,3373,3377,3380,3384,3388],{"id":26,"text":3258,"url":26,"identifiers":3259},"Rode, D.L.: In: Willardson, R.K., Beer, A.C. (eds.) Semiconductors and Semimetals, vol. 10, pp. 1–89. Academic Press, New York (1975)",{},{"id":26,"text":3261,"url":26,"identifiers":3262},"Castro Neto, A.H., Guinea, F., Peres, N.M., Novoselov, K.S., Geim, A.: Rev. Mod. Phys. 81, 109 (2009)",{"doi":921},{"id":26,"text":3264,"url":26,"identifiers":3265},"Shishir, R.S., Chen, F., Xia, J., Tao, N.J., Ferry, D.K.: J. Vac. Sci. Technol. B (2009, in press)",{},{"id":26,"text":3267,"url":26,"identifiers":3268},"Wallace, P.R.: Phys. Rev. 71, 622 (2006)",{"doi":3269},"10.1103\u002FPhysRev.71.622",{"id":26,"text":3271,"url":26,"identifiers":3272},"Bostwick, A., Ohta, T., Seyller, T., Horn, K., Rotenberg, E.: Nature Phys. 3, 37 (2006)",{"doi":3273},"10.1038\u002Fnphys477",{"id":26,"text":3275,"url":26,"identifiers":3276},"Novoselov, K.S., Geim, A., Morozov, S.V., Jiang, D., Katsnelson, M.I., Grigorieva, I.V., Dubonos, S.V., Firsov, A.A.: Nature 438, 197 (2005)",{"doi":3277},"10.1038\u002Fnature04233",{"id":26,"text":3271,"url":26,"identifiers":3279},{"doi":3273},{"id":26,"text":3281,"url":26,"identifiers":3282},"Fradkin, E.: Phys. Rev. B 33, 3257 (1986)",{"doi":3283},"10.1103\u002FPhysRevB.33.3257",{"id":26,"text":3285,"url":26,"identifiers":3286},"Ludwig, A., Fisher, M., Shankar, R., Grinstein, G.: Phys. Rev. B 50, 7526 (1994)",{"doi":3287},"10.1103\u002FPhysRevB.50.7526",{"id":26,"text":3289,"url":26,"identifiers":3290},"Aleiner, I.L., Efetov, K.B.: Phys. Rev. Lett. 97, 236801 (2006)",{"doi":3291},"10.1103\u002FPhysRevLett.97.236801",{"id":26,"text":3293,"url":26,"identifiers":3294},"Atland, A.: Phys. Rev. Lett. 97, 236802 (2006)",{"doi":3295},"10.1103\u002FPhysRevLett.97.236802",{"id":26,"text":3297,"url":26,"identifiers":3298},"Peres, N.M., Guinea, F., Castro Neto, A.H.: Phys. Rev. B 73, 125411 (2006)",{"doi":3299},"10.1103\u002FPhysRevB.73.125411",{"id":26,"text":3301,"url":26,"identifiers":3302},"Fritz, L., Schmalian, J., Müller, M., Sachdev, S.: Phys. Rev. B 78, 085416 (2008)",{"doi":3303},"10.1103\u002FPhysRevB.78.085416",{"id":26,"text":3305,"url":26,"identifiers":3306},"Kashuba, A.: Phys. Rev. B 78, 085415 (2008)",{"doi":3307},"10.1103\u002FPhysRevB.78.085415",{"id":26,"text":3309,"url":26,"identifiers":3310},"Bardarson, J.H., Tworzydło, J., Brouwer, P.W., Beenakker, C.W.J.: Phys. Rev. Lett. 99, 106801 (2007)",{"doi":3311},"10.1103\u002FPhysRevLett.99.106801",{"id":26,"text":3313,"url":26,"identifiers":3314},"Nomura, K., et al.: Phys. Rev. Lett. 99, 146806 (2007)",{"doi":3315},"10.1103\u002FPhysRevLett.99.146806",{"id":26,"text":3317,"url":26,"identifiers":3318},"Rossi, E., Das Sarma, S.: Phys. Rev. Lett. 101, 166803 (2008)",{"doi":3319},"10.1103\u002FPhysRevLett.101.166803",{"id":26,"text":3321,"url":26,"identifiers":3322},"Katsnelson, M.I., Novoselov, K.S., Geim, A.K.: Nature Phys. 2, 620 (2006)",{"doi":3323},"10.1038\u002Fnphys384",{"id":26,"text":3325,"url":26,"identifiers":3326},"Hwang, E.H., Adam, S., Das Sarma, S.: Phys. Rev. Lett. 98, 186806 (2007)",{"doi":3327},"10.1103\u002FPhysRevLett.98.186806",{"id":26,"text":3329,"url":26,"identifiers":3330},"Martin, J., Akerman, N., Ulbricht, G., Lohmann, T., Smet, J.H., Klitzing, K., Yacoby, A.: Nature Phys. 4, 144 (2008)",{"doi":1116},{"id":26,"text":3332,"url":26,"identifiers":3333},"Ferry, D.K.: Semiconductor Transport, p. 122. Taylor and Francis, London (2000)",{"doi":3334},"10.1201\u002Fb21468",{"id":26,"text":3336,"url":26,"identifiers":3337},"Hwang, E.H., Das Sarma, S.: Phys. Rev. B 77, 115449 (2008)",{"doi":3338},"10.1103\u002FPhysRevB.77.115449",{"id":26,"text":3340,"url":26,"identifiers":3341},"Yanagisawa, H., Tanaka, T., Ishida, Y., Matsue, M., Rokuta, E., Otani, S., Oshima, C.: Surf. Interf. Anal. 37, 133 (2005)",{"doi":3342},"10.1002\u002Fsia.1948",{"id":26,"text":3344,"url":26,"identifiers":3345},"Mañes, J.L.: Phys. Rev. B 76, 045430 (2007)",{"doi":3346},"10.1103\u002FPhysRevB.76.045430",{"id":26,"text":3348,"url":26,"identifiers":3349},"Ferry, D.K.: Surf. Sci. 57, 218 (1976)",{"doi":3350},"10.1016\u002F0039-6028(76)90178-3",{"id":26,"text":3352,"url":26,"identifiers":3353},"Ferry, D.K.: Phys. Rev. B 14, 1605 (1976)",{"doi":3354},"10.1103\u002FPhysRevB.14.1605",{"id":26,"text":3356,"url":26,"identifiers":3357},"Mariani, E., von Oppen, F.: Phys. Rev. Lett. 100, 076801",{},{"id":26,"text":3359,"url":26,"identifiers":3360},"Ando, T., Fowler, A.B., Stern, F.: Rev. Mod. Phys. 54, 437 (1982)",{"doi":3361},"10.1103\u002FRevModPhys.54.437",{"id":26,"text":3363,"url":26,"identifiers":3364},"Hamaguchi, C.: J. Comput. Electron. 2, 169 (2003)",{"doi":3365},"10.1023\u002FB:JCEL.0000011419.08158.3e",{"id":26,"text":3367,"url":26,"identifiers":3368},"Goodnick, S.M., Ferry, D.K., Wilmsen, C.W., Lilienthal, Z., Fathy, D., Krivanek, O.L.: Phys. Rev. B 32, 8171 (1985)",{"doi":3369},"10.1103\u002FPhysRevB.32.8171",{"id":26,"text":3371,"url":26,"identifiers":3372},"Yoshinobu, T., Iwamoto, A., Iwasaki, H.: In: Proc. 3rd Intern. Conf. Sol. State Dev. Mater., 1993",{},{"id":26,"text":3374,"url":26,"identifiers":3375},"Freenstra, R.M.: Phys. Rev. Lett. 72, 2749 (1994)",{"doi":3376},"10.1103\u002FPhysRevLett.72.2749",{"id":26,"text":3378,"url":26,"identifiers":3379},"Bird, A.J., Faulkner, L.R.: Electrochemical Methods: Fundamentals and Applications. Wiley, New York (2001)",{},{"id":26,"text":3381,"url":26,"identifiers":3382},"Grahame, D.C.: Chem. Rev. 41, 441 (1947)",{"doi":3383},"10.1021\u002Fcr60130a002",{"id":26,"text":3385,"url":26,"identifiers":3386},"Chen, F., Xia, J., Ferry, D.K., Tao, N.J.: Nano Lett. 9, 2511 (2009)",{"doi":3387},"10.1021\u002Fnl901292s",{"id":26,"text":3389,"url":26,"identifiers":3390},"Shishir, R.S., Ferry, D.K.: J. Phys. Cond. Matt. 21, 232204 (2009)",{"doi":3391},"10.1088\u002F0953-8984\u002F21\u002F23\u002F232204",{"id":3393,"createTime":3394,"updateTime":3395,"relativeEntities":3396,"slug":3397,"properties":3398,"entityType":836,"verifyStatus":25,"verifyTime":3395,"verifyNote":837,"syncStatus":28,"languages":3409,"translateLanguages":26,"viewCount":36,"primaryUrl":3410,"fullTextUrl":26,"authors":3411,"publicationType":881,"publisherRelationship":3511,"citationCount":259,"citationInfo":3547,"publishDate":3549,"publishYear":3550,"citationAnalyzeStatus":28,"lastCitationAnalyze":26,"indexDatabases":26,"openAccess":26,"references":3551,"isForceReanalyzing":1221},"7f287d55-b4d4-4cd0-96a1-ab7354f07414","2024-04-16T13:09:06.392+00:00","2025-01-06T19:08:24.900+00:00",[],"Solcore-a-multi-scale-Python-based-library-for-modelling-solar-cells-and-semiconductor-materials",{"mag":3399,"keywords":3401,"openalex":3402,"abstract":3404,"title":3405,"doi":3407},{"VOID":3400},"2757140513",{},{"VOID":3403},"W2757140513",{},{"EN":3406},"Solcore: a multi-scale, Python-based library for modelling solar cells and semiconductor materials",{"VOID":3408},"10.1007\u002Fs10825-018-1171-3",[102],"http:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-018-1171-3",[3412,3434,3449,3466,3481,3496],{"id":3413,"sortIndex":162,"researcher":26,"roles":3414,"affiliations":3415,"properties":3427},"b64fb792-674b-4629-a881-163f16e9ba03",[],[3416],{"id":3417,"sortIndex":36,"affiliation":3418,"properties":26},"dff9e487-dd4f-40c1-9a38-3a255e096841",{"id":3419,"createTime":3420,"updateTime":3421,"relativeEntities":3422,"slug":3423,"properties":3424,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"1b5761b5-f176-43ad-b2cc-79dbe0c1a5e4","2023-12-20T23:49:35.222+00:00","2024-12-26T01:10:24.842+00:00",[],"Department-of-Physics-Imperial-College-London-London-UK",{"title":3425},{"VI":3426},"Department of Physics, Imperial College London, London, UK",{"openalex":3428,"orcid":3430,"title":3432},{"VOID":3429},"A5079063585",{"VOID":3431},"https:\u002F\u002Forcid.org\u002F0000-0003-1875-9739",{"EN":3433},"N. J. Ekins-Daukes",{"id":3435,"sortIndex":59,"researcher":26,"roles":3436,"affiliations":3437,"properties":3444},"19416ddc-02d7-4275-b47c-6415613c5bdc",[],[3438],{"id":3439,"sortIndex":36,"affiliation":3440,"properties":26},"f0a4793b-614c-42b8-b66d-65b7025a7de3",{"id":3419,"createTime":3420,"updateTime":3421,"relativeEntities":3441,"slug":3423,"properties":3442,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3443},{"VI":3426},{"openalex":3445,"title":3447},{"VOID":3446},"A5008168151",{"EN":3448},"M. Führer",{"id":3450,"sortIndex":114,"researcher":26,"roles":3451,"affiliations":3452,"properties":3459},"ad3e4fd3-fc6d-4909-96ca-3eebdfd58975",[],[3453],{"id":3454,"sortIndex":36,"affiliation":3455,"properties":26},"0b5b5f3e-aa3b-4a70-b4b4-de04143dd228",{"id":3419,"createTime":3420,"updateTime":3421,"relativeEntities":3456,"slug":3423,"properties":3457,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3458},{"VI":3426},{"openalex":3460,"orcid":3462,"title":3464},{"VOID":3461},"A5024150447",{"VOID":3463},"https:\u002F\u002Forcid.org\u002F0000-0001-9082-9506",{"EN":3465},"Phoebe Pearce",{"id":3467,"sortIndex":36,"researcher":26,"roles":3468,"affiliations":3469,"properties":3476},"2febf73d-1569-42ec-b0f4-26ca70fc1fbb",[],[3470],{"id":3471,"sortIndex":36,"affiliation":3472,"properties":26},"9184bf69-2b21-4a57-9c6b-f9daee73e72a",{"id":3419,"createTime":3420,"updateTime":3421,"relativeEntities":3473,"slug":3423,"properties":3474,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3475},{"VI":3426},{"openalex":3477,"title":3479},{"VOID":3478},"A5047776110",{"EN":3480},"D. Alonso-Álvarez",{"id":3482,"sortIndex":115,"researcher":26,"roles":3483,"affiliations":3484,"properties":3491},"53ee7862-5997-4065-8565-4da127651ad2",[],[3485],{"id":3486,"sortIndex":36,"affiliation":3487,"properties":26},"c58c7c90-7da8-4af1-823d-58c0e3fa32a5",{"id":3419,"createTime":3420,"updateTime":3421,"relativeEntities":3488,"slug":3423,"properties":3489,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3490},{"VI":3426},{"openalex":3492,"title":3494},{"VOID":3493},"A5065126040",{"EN":3495},"Terence Wilson",{"id":3497,"sortIndex":111,"researcher":26,"roles":3498,"affiliations":3499,"properties":3506},"c253b7e9-6fb3-4587-9ab1-a06238e38450",[],[3500],{"id":3501,"sortIndex":36,"affiliation":3502,"properties":26},"9e3d4f53-2000-4b1d-a83a-960ad257beb4",{"id":3419,"createTime":3420,"updateTime":3421,"relativeEntities":3503,"slug":3423,"properties":3504,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3505},{"VI":3426},{"openalex":3507,"title":3509},{"VOID":3508},"A5031272998",{"EN":3510},"Daniel Farrell",{"url":26,"publisher":3512,"properties":3540},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":3513,"slug":663,"properties":3514,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":3518,"manageAffiliations":3519,"indexDatabases":3520,"url":26,"thumbnailPath":26,"statistic":3535,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":3515,"eissn":3516,"title":3517},{"VOID":666},{"VOID":668},{"EN":670},[],[],[3521,3528],{"id":727,"indexDatabase":3522,"url":740,"indexYears":741,"academicFieldIds":3527,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":3523,"label":3524,"description":3525,"key":737,"publicationTags":3526,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":3529,"url":764,"indexYears":26,"academicFieldIds":3534,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":3530,"label":3531,"description":3532,"key":760,"publicationTags":3533,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":3536,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":3537,"totalCitation":782,"totalCitationByYear":3538,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":3539,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"volume":3541,"pages":3543,"issue":3545},{"VOID":3542},"17",{"VOID":3544},"1099-1123",{"VOID":3546},"3",{"total":259,"publishYear":26,"statisticByYear":3548},{"2018":114,"2019":53,"2020":116,"2021":116,"2022":53,"2023":158,"2024":115},"2018-09-01",2018,[3552,3555,3559,3563,3566,3570,3574,3578,3582,3585,3588,3591,3595,3599,3602,3606,3609,3613,3616,3620,3624,3628,3632,3636,3640,3644,3648,3652,3656,3660,3664,3668,3672,3675,3679,3682,3685,3688,3692,3696,3699,3703,3707,3711,3714,3718,3722,3726,3730,3734,3738,3742,3745,3748,3752,3755,3758,3761,3765,3769,3773,3777,3781,3785,3789,3793,3797,3801,3805,3809,3813,3817,3821,3825,3829,3832,3836,3840,3844,3848,3852],{"id":26,"text":3553,"url":26,"identifiers":3554},"Gueymard, C.: “SMARTS2” [Online] (1995). https:\u002F\u002Fwww.nrel.gov\u002Frredc\u002Fsmarts\u002F",{},{"id":26,"text":3556,"url":26,"identifiers":3557},"Eisenlohr, J., Tucher, N., Höhn, O., Hauser, H., Peters, M., Kiefel, P., Goldschmidt, J.C., Bläsi, B.: Matrix formalism for light propagation and absorption in thick textured optical sheets. Opt. Express 23(11), A502–A518 (2015)",{"doi":3558},"10.1364\u002FOE.23.00A502",{"id":26,"text":3560,"url":26,"identifiers":3561},"Baker-Finch, S.C., McIntosh, K.R.: A freeware program for precise optical analysis of the front surface of a solar cell. In: 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), pp. 002 184–002 187. IEEE (2010)",{"doi":3562},"10.1109\u002FPVSC.2010.5616132",{"id":26,"text":3564,"url":26,"identifiers":3565},"Basore, P.A.: PC-1D version 3: improved speed and convergence. In IEEE 20nd Photovoltaic Specialists Conference, pp. 299–302 (1991)",{},{"id":26,"text":3567,"url":26,"identifiers":3568},"Burgelman, M., Nollet, P., Degrave, S.: Modelling polycrystalline semiconductor solar cells. Thin Solid Films 361–362, 527–532 (2000)",{"doi":3569},"10.1016\u002FS0040-6090(99)00825-1",{"id":26,"text":3571,"url":26,"identifiers":3572},"Fell, A.: A free and fast three-dimensional\u002Ftwo-dimensional solar cell simulator featuring conductive boundary and quasi-neutrality approximations. IEEE Trans. Electron Devices 60(2), 733–738 (2013)",{"doi":3573},"10.1109\u002FTED.2012.2231415",{"id":26,"text":3575,"url":26,"identifiers":3576},"Varache, R., Leendertz, C., Gueunier-Farret, M., Haschke, J., Muñoz, D., Korte, L.: Investigation of selective junctions using a newly developed tunnel current model for solar cell applications. Sol. Energy Mater. Sol. Cells 141(Supplement C), 14–23 (2015)",{"doi":3577},"10.1016\u002Fj.solmat.2015.05.014",{"id":26,"text":3579,"url":26,"identifiers":3580},"Birner, S., Zibold, T., Andlauer, T., Kubis, T., Sabathil, M., Trellakis, A., Vogl, P.: nextnano: general purpose 3-D simulations. IEEE Trans. Electron Devices 54(9), 2137–2142 (2007)",{"doi":3581},"10.1109\u002FTED.2007.902871",{"id":26,"text":3583,"url":26,"identifiers":3584},"Silvaco, “Atlas: Device Simulation Framework” (2017)",{},{"id":26,"text":3586,"url":26,"identifiers":3587},"Synopsis, “Sentaurus Device” (2017)",{},{"id":26,"text":3589,"url":26,"identifiers":3590},"P. L. team and contributors. PV Lightouse. [Online] (2018). http:\u002F\u002Fwww.pvlighthouse.com.au",{},{"id":26,"text":3592,"url":26,"identifiers":3593},"Andrews, R.W., Stein, J.S., Hansen, C.: Introduction to the open source PV LIB for python Photovoltaic system modelling package. In: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), pp. 0170–0174 (2014)",{"doi":3594},"10.1109\u002FPVSC.2014.6925501",{"id":26,"text":3596,"url":26,"identifiers":3597},"Connolly, J.P.: Analytical models of bulk and quantum well solar cells and relevance of the radiative limit. In: Fara, L., Yamaguchi, M. (eds.) Advanced Solar Cell Materials, Technology, Modelling, and Simulation, chap. 5, pp. 59–77. IGI Global, Hershey, PA (2013). https:\u002F\u002Fdoi.org\u002F10.4018\u002F978-1-4666-1927-2",{"doi":3598},"10.4018\u002F978-1-4666-1927-2",{"id":26,"text":3600,"url":26,"identifiers":3601},"Alonso-Álvarez, D., Wilson, T., Pearce, P., Führer, M., Farrell, D., Ekins-Daukes, N.J.: Solocre Code Repository. [Online] (2018). http:\u002F\u002Fdoi.org\u002F10.5281\u002Fzenodo.1185316",{},{"id":26,"text":3603,"url":26,"identifiers":3604},"Vurgaftman, I., Meyer, J.R., Ram-Mohan, L.R.: Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 89(11), 5815–5875 (2001)",{"doi":3605},"10.1063\u002F1.1368156",{"id":26,"text":3607,"url":26,"identifiers":3608},"Levinshtein, M., Rumyantsev, S., Shur, M., Levinshtein, M., Rumyantsev, S., Shur, M.: Handbook Series on Semiconductor Parameters, ser. Volume 2: Ternary and Quaternary III-V Compounds, vol. 2. World Scientific, Singapore (2012)",{},{"id":26,"text":3610,"url":26,"identifiers":3611},"Sotoodeh, M., Khalid, A.H., Rezazadeh, A.A.: Empirical low-field mobility model for III–V compounds applicable in device simulation codes. J. Appl. Phys. 87(6), 2890-12 (2000)",{"doi":3612},"10.1063\u002F1.372274",{"id":26,"text":3614,"url":26,"identifiers":3615},"Software Spectra Inc., “Optical Data from Sopra S. A.” (2008)",{},{"id":26,"text":3617,"url":26,"identifiers":3618},"Paxman, M., Nelson, J., Braun, B., Connolly, J., Barnham, K.W.J., Foxon, C.T., Roberts, J.S.: Modeling the spectral response of the quantum well solar cell. J. Appl. Phys. 74(1), 614–621 (1993)",{"doi":3619},"10.1063\u002F1.355275",{"id":26,"text":3621,"url":26,"identifiers":3622},"Nelson, J., Barnes, J., Ekins-Daukes, N., Kluftinger, B., Tsui, E., Barnham, K., Foxon, C.T., Cheng, T., Roberts, J.S.: Observation of suppressed radiative recombination in single quantum well p–i–n photodiodes. J. Appl. Phys. 82(12), 6240–6246 (1997)",{"doi":3623},"10.1063\u002F1.366510",{"id":26,"text":3625,"url":26,"identifiers":3626},"Nelson, J., Ballard, I., Barnham, K., Connolly, J.P., Roberts, J.S., Pate, M.: Effect of quantum well location on single quantum well p–i–n photodiode dark currents. J. Appl. Phys. 86(10), 5898–5905 (1999)",{"doi":3627},"10.1063\u002F1.371609",{"id":26,"text":3629,"url":26,"identifiers":3630},"Fuhrer, M.F., Adams, J.G.J., Barnham, K.W.J., Browne, B.C., Chan, N.L.A., Farrell, D.J., Hirst, L., Lee, K.-H., Ekins-Daukes, N.J., Ogura, A., Yoshida, K., Okada, Y.: Extensible modelling framework for nanostructured III–V solar cells. In: 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), pp. 002 615–002 618 (2011)",{"doi":3631},"10.1109\u002FPVSC.2011.6186484",{"id":26,"text":3633,"url":26,"identifiers":3634},"Führer, M., Farrell, D., Ekins-Daukes, N.: CPV modelling with Solcore: an extensible modelling framework for the rapid computational simulation and evaluation of solar cell designs and concepts. In: 9th International Conference on Concentrator Photovoltaic Systems: CPV-9, pp. 34–37. AIP (2014)",{"doi":3635},"10.1063\u002F1.4822193",{"id":26,"text":3637,"url":26,"identifiers":3638},"Tomić, S.: Electronic structure of InyGa1-yAs1-xNx\u002FGaAs(N) quantum dots by ten-band kp theory. Phys. Rev. B 73(12), 125348–8 (2006)",{"doi":3639},"10.1103\u002FPhysRevB.73.125348",{"id":26,"text":3641,"url":26,"identifiers":3642},"Volk, M., Lutgen, S., Marschner, T., Stolz, W., Göbel, E.O., Christianen, P.C.M., Maan, J.C.: Carrier effective masses in symmetrically strained (GaIn)As\u002FGa(PAs) multiple-quantum-well structures. Phys. Rev. B 52(15), 11 096–11 104 (1995)",{"doi":3643},"10.1103\u002FPhysRevB.52.11096",{"id":26,"text":3645,"url":26,"identifiers":3646},"Frensley, W.R.: Numerical evaluation of resonant states. Superlattices Microstruct. 11(3), 347–350 (1992)",{"doi":3647},"10.1016\u002F0749-6036(92)90396-M",{"id":26,"text":3649,"url":26,"identifiers":3650},"Adachi, S.: Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb. Phys. Rev. B 35(14), 7454–7463 (1987)",{"doi":3651},"10.1103\u002FPhysRevB.35.7454",{"id":26,"text":3653,"url":26,"identifiers":3654},"Adachi, S.: Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, Al $$_x$$ x Ga $$_{1-x}$$ 1 - x As, and In $$_{1-x}$$ 1 - x Ga $$_x$$ x As $$_y$$ y P $$_{1-y}$$ 1 - y . J. Appl. Phys. 66(12), 6030–6040 (1989)",{"doi":3655},"10.1063\u002F1.343580",{"id":26,"text":3657,"url":26,"identifiers":3658},"Adachi, S.: Optical dispersion relations for Si and Ge. J. Appl. Phys. 66(7), 3224–3231 (1989)",{"doi":3659},"10.1063\u002F1.344140",{"id":26,"text":3661,"url":26,"identifiers":3662},"Rakić, A.D., Majewski, M.L.: Modeling the optical dielectric function of GaAs and AlAs: extension of Adachi’s model. J. Appl. Phys. 80(10), 5909–5914 (1996)",{"doi":3663},"10.1063\u002F1.363586",{"id":26,"text":3665,"url":26,"identifiers":3666},"Kim, C.C., Garland, J.W., Abad, H., Raccah, P.M.: Modeling the optical dielectric function of semiconductors: extension of the critical-point parabolic-band approximation. Phys. Rev. B 45(20), 11 749–11 767 (1992)",{"doi":3667},"10.1103\u002FPhysRevB.45.11749",{"id":26,"text":3669,"url":26,"identifiers":3670},"Kim, C.C., Garland, J.W., Raccah, P.M.: Modeling the optical dielectric function of the alloy system AlxGa1-xAs. Phys. Rev. B 47(4), 1876–1888 (1993)",{"doi":3671},"10.1103\u002FPhysRevB.47.1876",{"id":26,"text":3673,"url":26,"identifiers":3674},"Woollam, J.A.: Guide to using WVASE 32: spectroscopic ellipsometry data acquisition and analysis software. J. A. Woollam Company (2008). https:\u002F\u002Fbooks.google.co.uk\u002Fbooks?id=xOupYgEACAAJ",{},{"id":26,"text":3676,"url":26,"identifiers":3677},"Palik, E.D.: Gallium Arsenide (GaAs). In: Handbook of Optical Constants of Solids, pp. 429–443. Elsevier, Amsterdam (1997)",{"doi":3678},"10.1016\u002FB978-012544415-6.50018-2",{"id":26,"text":3680,"url":26,"identifiers":3681},"Wilson, T., Mellor, A., Hylton, N.P., Ekins-Daukes, N.J.: The effects of short-range alloy disorder on the potential voltage performance in GaAsBi based solar cells. In: Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition (2017)",{},{"id":26,"text":3683,"url":26,"identifiers":3684},"Chuang, S.L.: Physics of Optoelectronic Devices. Wiley-Interscience, New York (1995)",{},{"id":26,"text":3686,"url":26,"identifiers":3687},"Barnham, K., Vvedensky, D. (eds.): Low-Dimensional Semiconductor Structures: Fundamentals and Device Applications. Cambridge University Press, Cambridge (2001)",{},{"id":26,"text":3689,"url":26,"identifiers":3690},"Klipstein, P.C., Apsley, N.: A theory for the electroreflectance spectra of quantum well structures. J. Phys. C Solid State Phys. 19(32), 6461–6478 (2000)",{"doi":3691},"10.1088\u002F0022-3719\u002F19\u002F32\u002F020",{"id":26,"text":3693,"url":26,"identifiers":3694},"Galleano, R., Zaaiman, W., Alonso-Álvarez, D., Minuto, A., Ferretti, N., Fucci, R., Pravettoni, M., Halwachs, M., Friederichs, M., Plag, F., Friedrich, D., Haverkamp, E.: Results of the fifth international spectroradiometer comparison for improved solar spectral irradiance measurements and related impact on reference solar cell calibration. IEEE J. Photovolt. 6(6), 1587–1597 (2016)",{"doi":3695},"10.1109\u002FJPHOTOV.2016.2606698",{"id":26,"text":3697,"url":26,"identifiers":3698},"Alonso-Álvarez, D., Wilsond, D., Pearce, P., Führer, M., Farrell, D., Ekins-Daukes, N.J.: Supplementary Information—Solcore: a multi-scale, Python-based library for modelling solar cells and semiconductor materials. J. Comput. Electron., vol. Supplementary Information (2018)",{"doi":3408},{"id":26,"text":3700,"url":26,"identifiers":3701},"Wilson, T., Thomas, T., Führer, M., Ekins-Daukes, N.J.: Addressing reflectivity losses in multi-junction solar cells to achieve 50 conversion efficiency. Mater. Res. Innov. 19(7), 503–507 (2016)",{"doi":3702},"10.1080\u002F14328917.2015.1115630",{"id":26,"text":3704,"url":26,"identifiers":3705},"Alonso-Álvarez, D., Ferre Llin, L., Mellor, A., Paul, D.J., Ekins-Daukes, N.J.: ITO and AZO films for low emissivity coatings in hybrid photovoltaic-thermal applications. Sol. Energy 155, 82–92 (2017)",{"doi":3706},"10.1016\u002Fj.solener.2017.06.033",{"id":26,"text":3708,"url":26,"identifiers":3709},"Macleod, H.A.: Thin-Film Optical Filters. Institute of Physics Publishing, Bristol (2001)",{"doi":3710},"10.1201\u002F9781420033236",{"id":26,"text":3712,"url":26,"identifiers":3713},"Byrnes, S.J.: Multilayer Optical Calculations. https:\u002F\u002Farxiv.org\u002Fabs\u002F1603.02720v2 (2016)",{},{"id":26,"text":3715,"url":26,"identifiers":3716},"Liu, V., Fan, S.: S4: a free electromagnetic solver for layered periodic structures. Comput. Phys. Commun. 183(10), 2233–2244 (2012)",{"doi":3717},"10.1016\u002Fj.cpc.2012.04.026",{"id":26,"text":3719,"url":26,"identifiers":3720},"Hylton, N.P., Li, X.F., Giannini, V., Lee, K.H., Ekins-Daukes, N.J., Loo, J., Vercruysse, D., Van Dorpe, P., Sodabanlu, H., Sugiyama, M., Maier, S.A.: Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes. Sci. Rep. 3(1), 2874–6 (2013)",{"doi":3721},"10.1038\u002Fsrep02874",{"id":26,"text":3723,"url":26,"identifiers":3724},"Mellor, A., Hylton, N.P., Maier, S.A., Ekins-Daukes, N.: Interstitial light-trapping design for multi-junction solar cells. Sol. Energy Mater. Solar Cells 159, 212–218 (2017). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.solmat.2016.09.005",{"doi":3725},"10.1016\u002Fj.solmat.2016.09.005",{"id":26,"text":3727,"url":26,"identifiers":3728},"Martí, A., Araújo, G.L.: Limiting efficiencies for photovoltaic energy conversion in multigap systems. Sol. Energy Mater. Sol. Cells 43(2), 203–222 (1996)",{"doi":3729},"10.1016\u002F0927-0248(96)00015-3",{"id":26,"text":3731,"url":26,"identifiers":3732},"Chan, N.L.A., Ekins-Daukes, N.J., Adams, J.G.J., Lumb, M.P., Gonzalez, M., Jenkins, P.P., Vurgaftman, I., Meyer, J.R., Walters, R.J.: Optimal bandgap combinations—does material quality matter? IEEE J. Photovolt. 2(2), 202–208 (2012)",{"doi":3733},"10.1109\u002FJPHOTOV.2011.2180513",{"id":26,"text":3735,"url":26,"identifiers":3736},"Green, M.A.: Radiative efficiency of state-of-the-art photovoltaic cells. Prog. Photovolt. Res. Appl. 20(4), 472–476 (2011)",{"doi":3737},"10.1002\u002Fpip.1147",{"id":26,"text":3739,"url":26,"identifiers":3740},"Thomas, T., Mellor, A., Hylton, N.P., Führer, M., Alonso-Álvarez, D., Braun, A., Ekins-Daukes, N.J., David, J.P.R., Sweeney, S.J.: Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell. Semicond. Sci. Technol. 30(9), 094010-6 (2015)",{"doi":3741},"10.1088\u002F0268-1242\u002F30\u002F9\u002F094010",{"id":26,"text":3743,"url":26,"identifiers":3744},"Ekins-Daukes, N.J., Kemmoku, Y., Araki, K., Betts, T.R., Gottschalg, R., Infield, D.G., Yamaguchi, M.: The design specification for Syracuse; a multi-junction concentrator system computer model. In: Proceedings of the 19th European Photovoltaic Solar Energy Conference, pp. 1–4 (2004)",{},{"id":26,"text":3746,"url":26,"identifiers":3747},"Sze, S.M.: Physics of Semiconductor Devices, 2nd edn. Wiley, New York, NY (1981)",{},{"id":26,"text":3749,"url":26,"identifiers":3750},"Nelson, J.: The Physics of Solar Cells. Imperial College Press, London; River Edge, NJ: Distributed by World Scientific Pub. Co, (2003)",{"doi":3751},"10.1142\u002Fp276",{"id":26,"text":3753,"url":26,"identifiers":3754},"Basore, P.A.: PC-1D Installation Manual and User’s Guide Version 3.1, pp. 1–96 (2009)",{},{"id":26,"text":3756,"url":26,"identifiers":3757},"Farrell, P.A., Gartland, E.C.: On the Sharfetter–Gummer discretization for drift–diffusion continuity equations. In: Miller, J.J.H. (ed.) Computational Methods for Boundary and Interior Layers in Several Dimensions, pp. 51–79 (1991)",{},{"id":26,"text":3759,"url":26,"identifiers":3760},"Thomas, T., Wilson, T., Führer, M., Alonso-Álvarez, D., Ekins-Daukes, N.J., Lackner, D., Kailuweit, P., Philipps, S.P., Bett, A.W., Toprasertpong, K., Sugiyama, M., Okada, Y.: Potential for reaching 50% power conversion efficiency using quantum heterostructures. In: 6th World Conference on Photovoltaic Energy Conversion, pp. 1–2 (2014)",{},{"id":26,"text":3762,"url":26,"identifiers":3763},"Alonso-Álvarez, D., Führer, M., Thomas, T., Ekins-Daukes, N.: Elements of modelling and design of multi-quantum well solar cells. In: 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), pp. 2865–2870 (2014)",{"doi":3764},"10.1109\u002FPVSC.2014.6925530",{"id":26,"text":3766,"url":26,"identifiers":3767},"Alonso-Álvarez, D., Ekins-Daukes, N.J.: Quantum wells for high-efficiency photovoltaics. In: Freundlich, A., Lombez, L., Sugiyama, M. (eds.) Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, vol. 9743, p. 974311. SPIE OPTO, San Francisco, CA (2016). https:\u002F\u002Fdoi.org\u002F10.1117\u002F12.2217590",{"doi":3768},"10.1117\u002F12.2217590",{"id":26,"text":3770,"url":26,"identifiers":3771},"Cabrera, C.I., Rimada, J.C., Connolly, J.P., Hernandez, L.: Modelling of GaAsP\u002FInGaAs\u002FGaAs strain-balanced multiple-quantum well solar cells. J. Appl. Phys. 113(2), 024512-7 (2013)",{"doi":3772},"10.1063\u002F1.4775404",{"id":26,"text":3774,"url":26,"identifiers":3775},"Aeberhard, U.: Quantum-kinetic perspective on photovoltaic device operation in nanostructure-based solar cells. J. Mater. Res. 33, 373–386 (2018)",{"doi":3776},"10.1557\u002Fjmr.2017.468",{"id":26,"text":3778,"url":26,"identifiers":3779},"Lee, K.-H., Barnham, K.W.J., Connolly, J.P., Browne, B.C., Airey, R.J., Roberts, J.S., Führer, M., Tibbits, T.N.D., Ekins-Daukes, N.J.: Demonstration of photon coupling in dual multiple-quantum-well solar cells. IEEE J. Photovolt. 2(1), 68–74 (2012)",{"doi":3780},"10.1109\u002FJPHOTOV.2011.2177444",{"id":26,"text":3782,"url":26,"identifiers":3783},"Steiner, M.A., Geisz, J.F., Moriarty, T.E., France, R.M., McMahon, W.E., Olson, J.M., Kurtz, S.R., Friedman, D.J.: Measuring IV curves and subcell photocurrents in the presence of luminescent coupling. IEEE J. Photovolt. 3(2), 879–887 (2013)",{"doi":3784},"10.1109\u002FJPHOTOV.2012.2228298",{"id":26,"text":3786,"url":26,"identifiers":3787},"Steiner, M.A., Geisz, J.F.: Non-linear luminescent coupling in series-connected multijunction solar cells. Appl. Phys. Lett. 100(25), 251106-5 (2012)",{"doi":3788},"10.1063\u002F1.4729827",{"id":26,"text":3790,"url":26,"identifiers":3791},"Steiner, M.A., Kurtz, S.R., Geisz, J.F., McMahon, W.E., Olson, J.M.: Using phase effects to understand measurements of the quantum efficiency and related luminescent coupling in a multijunction solar cell. IEEE J. Photovolt. 2(4), 424–433 (2012)",{"doi":3792},"10.1109\u002FJPHOTOV.2012.2206566",{"id":26,"text":3794,"url":26,"identifiers":3795},"Chan, N.L.A., Thomas, T., Führer, M., Ekins-Daukes, N.J.: Practical limits of multijunction solar cell performance enhancement from radiative coupling considering realistic spectral conditions. IEEE J. Photovolt. 4(5), 1306–1313 (2014)",{"doi":3796},"10.1109\u002FJPHOTOV.2014.2337520",{"id":26,"text":3798,"url":26,"identifiers":3799},"Louarn, K., Fontaine, C., Arnoult, A., Olivié, F., Lacoste, G., Piquemal, F., Bounouh, A., Almuneau, G.: Modelling of interband transitions in GaAs tunnel diode. Semicond. Sci. Technol. 31(6), 06LT01-6 (2016)",{"doi":3800},"10.1088\u002F0268-1242\u002F31\u002F6\u002F06LT01",{"id":26,"text":3802,"url":26,"identifiers":3803},"Steiner, M., Philipps, S.P., Hermle, M., Bett, A.W., Dimroth, F.: Validated front contact grid simulation for GaAs solar cells under concentrated sunlight. Prog. Photovolt. Res. Appl. 19(1), 73–83 (2010)",{"doi":3804},"10.1002\u002Fpip.989",{"id":26,"text":3806,"url":26,"identifiers":3807},"Nishioka, K., Takamoto, T., Agui, T., Kaneiwa, M., Uraoka, Y., Fuyuki, T.: Evaluation of InGaP\u002FInGaAs\u002FGe triple-junction solar cell under concentrated light by simulation program with integrated circuit emphasis. Jpn. J. Appl. Phys. 43(3), 882–889 (2004)",{"doi":3808},"10.1143\u002FJJAP.43.882",{"id":26,"text":3810,"url":26,"identifiers":3811},"Steiner, M., Guter, W., Peharz, G., Philipps, S.P., Dimroth, F., Bett, A.W.: A validated SPICE network simulation study on improving tunnel diodes by introducing lateral conduction layers. Prog. Photovolt. Res. Appl. 20(3), 274–283 (2011)",{"doi":3812},"10.1002\u002Fpip.1133",{"id":26,"text":3814,"url":26,"identifiers":3815},"Jürgens, T., Gütay, L., Bauer, G.H.: Photoluminescence, open circuit voltage, and photocurrents in Cu(In, Ga)Se2 solar cells with lateral submicron resolution. Thin Solid Films 511–512, 678–683 (2006)",{"doi":3816},"10.1016\u002Fj.tsf.2005.11.065",{"id":26,"text":3818,"url":26,"identifiers":3819},"Paire, M., Lombez, L., Guillemoles, J.-F., Lincot, D.: Measuring sheet resistance of CIGS solar cell’s window layer by spatially resolved electroluminescence imaging. Thin Solid Films 519(21), 7493–7496 (2011)",{"doi":3820},"10.1016\u002Fj.tsf.2010.12.214",{"id":26,"text":3822,"url":26,"identifiers":3823},"Alonso-Álvarez, D., Ekins-Daukes, N.: SPICE modelling of photoluminescence and electroluminescence based current-voltage curves of solar cells for concentration applications. J. Green Eng. 5(4), 33–48 (2016)",{"doi":3824},"10.13052\u002Fjge1904-4720.5343",{"id":26,"text":3826,"url":26,"identifiers":3827},"Pieters, B.E.: A free and open source finite-difference simulation tool for solar modules. In: 2014 IEEE 40th Photovoltaic Specialist Conference. PVSC 2014, pp. 1370–1375 (2014)",{"doi":3828},"10.1109\u002FPVSC.2014.6925173",{"id":26,"text":3830,"url":26,"identifiers":3831},"Pieters, B.E.: PVMOS Code Repository. [Online] (2018). https:\u002F\u002Fgithub.com\u002FIEK-5\u002FPVMOS",{},{"id":26,"text":3833,"url":26,"identifiers":3834},"Wong, J.: Griddler: intelligent computer aided design of complex solar cell metallization patterns. In: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), pp. 0933–0938 (2013)",{"doi":3835},"10.1109\u002FPVSC.2013.6744296",{"id":26,"text":3837,"url":26,"identifiers":3838},"Castaner, L., Silvestre, S.: Modelling PV-Systems Using PSPice. Wiley, New York (2002)",{"doi":3839},"10.1002\u002F0470855541",{"id":26,"text":3841,"url":26,"identifiers":3842},"Ekins-Daukes, N.J., Betts, T.R., Kemmoku, Y., Araki, K., Lee, H.S., Gottschalg, R., Boreland, M.B., Infield, D.G., Yamaguchi, M.: Syracuse—a multi-junction concentrator system computer model. In: Proceedings of the 31st IEEE Photovoltaic Specialists Conference, pp. 651–654 (2005)",{"doi":3843},"10.1109\u002FPVSC.2005.1488215",{"id":26,"text":3845,"url":26,"identifiers":3846},"Chan, N.L.A., Young, T.B., Brindley, H.E., Ekins-Daukes, N.J., Araki, K., Kemmoku, Y., Yamaguchi, M.: Validation of energy prediction method for a concentrator photovoltaic module in Toyohashi Japan. Prog. Photovolt. Res. Appl. 21(8), 1598–1610 (2012)",{"doi":3847},"10.1002\u002Fpip.2241",{"id":26,"text":3849,"url":26,"identifiers":3850},"Chan, N.L.A., Brindley, H.E., Ekins-Daukes, N.J.: Impact of individual atmospheric parameters on CPV system power, energy yield and cost of energy. Prog. Photovolt. Res. Appl. 22(10), 1080–1095 (2014)",{"doi":3851},"10.1002\u002Fpip.2376",{"id":26,"text":3853,"url":26,"identifiers":3854},"Kamath, H.G., Araki, K., Ekins-Daukes, N.J., Ramasesha, S.K.: Performance analysis and fault detection method for concentrator photovoltaic modules. Submitted to Journal of Photovoltaics (2018)",{"doi":3855},"10.1109\u002FJPHOTOV.2018.2883621",{"id":3857,"createTime":3858,"updateTime":3859,"relativeEntities":3860,"slug":3861,"properties":3862,"entityType":836,"verifyStatus":25,"verifyTime":3875,"verifyNote":837,"syncStatus":28,"languages":26,"translateLanguages":3876,"viewCount":36,"primaryUrl":3877,"fullTextUrl":26,"authors":3878,"publicationType":881,"publisherRelationship":3999,"citationCount":29,"citationInfo":4032,"publishDate":4034,"publishYear":2980,"citationAnalyzeStatus":28,"lastCitationAnalyze":4035,"indexDatabases":26,"openAccess":26,"references":4036,"isForceReanalyzing":1221},"c7a65ca7-1ded-4f32-8000-93bcb93eb2c5","2024-01-13T11:24:28.584+00:00","2026-05-25T12:40:24.263+00:00",[],"Physical-model-of-dynamic-Joule-heating-effect-for-reset-process-in-conductive-bridge-random-access-memory",{"abstract":3863,"title":3866,"doi":3869,"gsPaper":3871,"keywords":3873},{"VI":3864,"EN":3865},"Hiệu ứng nhiệt Joule động của quá trình đặt lại trong bộ nhớ truy cập ngẫu nhiên cầu dẫn (CBRAM) đã được nghiên cứu lý thuyết. Bằng cách giới thiệu hiệu ứng hình học của sợi dẫn (CF), phân bố nhiệt độ và điện trường trong trạng thái tạm thời trong cả trường hợp một chiều và ba chiều được thảo luận chi tiết. Chúng tôi phát hiện rằng hình học của CF đóng vai trò quan trọng trong quá trình gia nhiệt Joule tạm thời, và hiệu ứng nhiệt tạm thời ngày càng trở nên đáng kể khi điện áp áp dụng tăng trong quy trình đặt lại. Vị trí được đề xuất mà CF bị đứt là giữa vị trí cao điểm nhiệt độ và đầu hẹp của CF chứ không phải là điểm cao nhất nhiệt độ trong hệ thống CF hình nón. Điều thú vị hơn là sự đứt gãy của CF có khả năng xảy ra trong quá trình tạm thời, trước khi trạng thái ổn định được thiết lập.","Dynamic Joule heating effect of reset process in conductive-bridge random access memory (CBRAM) was investigated theoretically. By introducing the geometry effect of conductive filament (CF), the temperature and electric field distributions in the transient state in both one-dimen-sional and three-dimensional cases were discussed in detail. We found that the CF’s geometry plays an important role in the transient Joule heating process, and the transient thermal effect turns increasingly significant with increasing applied voltage in reset procedure. The proposed position where CF ruptures is between the location of temperature peak and narrow end of the CF rather than the point of temperature peak in the cone-shaped CF system. It is more interesting that the rupture of CF possibly occurs in transient process, before steady-state is established.",{"VI":3867,"EN":3868},"Mô hình vật lý của hiệu ứng nhiệt Joule động cho quá trình đặt lại trong bộ nhớ truy cập ngẫu nhiên cầu dẫn","Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory",{"VOID":3870},"10.1007\u002Fs10825-013-0552-x",{"VOID":3872},"[\"3556711031696745545\"]",{"VI":3874},"hiệu ứng nhiệt Joule, bộ nhớ truy cập ngẫu nhiên cầu dẫn, quá trình đặt lại, hình học sợi dẫn, phân bố điện trường","2024-04-30T05:44:00.027+00:00",[101],"https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs10825-013-0552-x",[3879,3896,3918,3930,3949,3963,3975,3987],{"id":3880,"sortIndex":115,"researcher":26,"roles":3881,"affiliations":3883,"properties":3893},"6cb8d0d1-b55c-456a-9b36-b7c9a47c23f9",[3882],"AUTHOR",[3884],{"id":26,"sortIndex":36,"affiliation":3885,"properties":26},{"id":3886,"createTime":3887,"updateTime":3887,"relativeEntities":3888,"slug":3889,"properties":3890,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"7ff4de2c-5a00-48d0-82a6-c7167782f6af","2024-04-13T16:39:20.674+00:00",[],"Laboratory-of-Nano-Fabrication-and-Novel-Devices-Integrated-Technology-Institute-of-Microelectronics-Chinese-Academy-of-Sciences-Beijing-People-s-Republic-of-China",{"title":3891},{"EN":3892},"Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, People’s Republic of China",{"title":3894},{"VI":3895},"Ling Li",{"id":3897,"sortIndex":162,"researcher":26,"roles":3898,"affiliations":3899,"properties":3915},"c8748017-0be1-402a-a45d-d20fdfdb987a",[3882],[3900,3905],{"id":26,"sortIndex":36,"affiliation":3901,"properties":26},{"id":3886,"createTime":3887,"updateTime":3887,"relativeEntities":3902,"slug":3889,"properties":3903,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3904},{"EN":3892},{"id":3906,"sortIndex":115,"affiliation":3907,"properties":3914},"5ef00d6d-2465-4a7d-b79a-26b854b69656",{"id":3908,"createTime":3909,"updateTime":3909,"relativeEntities":3910,"slug":26,"properties":3911,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"cd42c5bb-7b56-4210-9cb6-d0e9dd356433","2024-01-16T07:40:20.853+00:00",[],{"title":3912},{"VI":3913},"School of Physical Science and Technology, Lanzhou University, Lanzhou, People’s Republic of China",{},{"title":3916},{"VI":3917},"Hongwei Xie",{"id":3919,"sortIndex":114,"researcher":26,"roles":3920,"affiliations":3921,"properties":3927},"8f85e5de-1e16-44bb-98db-5eaaf9b860fe",[3882],[3922],{"id":26,"sortIndex":36,"affiliation":3923,"properties":26},{"id":3886,"createTime":3887,"updateTime":3887,"relativeEntities":3924,"slug":3889,"properties":3925,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3926},{"EN":3892},{"title":3928},{"VI":3929},"Nianduan Lu",{"id":3931,"sortIndex":36,"researcher":26,"roles":3932,"affiliations":3933,"properties":3946},"b759fe2e-da81-499d-a58f-d80eab14f6fa",[3882],[3934,3939],{"id":26,"sortIndex":36,"affiliation":3935,"properties":26},{"id":3886,"createTime":3887,"updateTime":3887,"relativeEntities":3936,"slug":3889,"properties":3937,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3938},{"EN":3892},{"id":3940,"sortIndex":115,"affiliation":3941,"properties":3945},"9fbaf22f-78ca-4c94-9f34-29ff436d4929",{"id":3908,"createTime":3909,"updateTime":3909,"relativeEntities":3942,"slug":26,"properties":3943,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3944},{"VI":3913},{},{"title":3947},{"VI":3948},"Pengxiao Sun",{"id":3950,"sortIndex":111,"researcher":26,"roles":3951,"affiliations":3952,"properties":3958},"8dd5e9a4-30e8-4507-943a-7b198571f83c",[3882],[3953],{"id":26,"sortIndex":36,"affiliation":3954,"properties":26},{"id":3886,"createTime":3887,"updateTime":3887,"relativeEntities":3955,"slug":3889,"properties":3956,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3957},{"EN":3892},{"title":3959,"gsAuthor":3961},{"VI":3960},"Ming Wang",{"VOID":3962},"[\"7IhMUQoAAAAJ\"]",{"id":3964,"sortIndex":158,"researcher":26,"roles":3965,"affiliations":3966,"properties":3972},"84cd5bdc-370e-4cab-adea-018abd674f1f",[3882],[3967],{"id":26,"sortIndex":36,"affiliation":3968,"properties":26},{"id":3886,"createTime":3887,"updateTime":3887,"relativeEntities":3969,"slug":3889,"properties":3970,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3971},{"EN":3892},{"title":3973},{"VI":3974},"Ming Liu",{"id":3976,"sortIndex":59,"researcher":26,"roles":3977,"affiliations":3978,"properties":3984},"1b48763c-b5c9-44ef-be3d-4949428a64cc",[3882],[3979],{"id":26,"sortIndex":36,"affiliation":3980,"properties":26},{"id":3908,"createTime":3909,"updateTime":3909,"relativeEntities":3981,"slug":26,"properties":3982,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3983},{"VI":3913},{"title":3985},{"VI":3986},"Yingtao Li",{"id":3988,"sortIndex":135,"researcher":26,"roles":3989,"affiliations":3990,"properties":3996},"7fedc90c-49b4-4875-b4e3-cefd9618dcde",[3882],[3991],{"id":26,"sortIndex":36,"affiliation":3992,"properties":26},{"id":3908,"createTime":3909,"updateTime":3909,"relativeEntities":3993,"slug":26,"properties":3994,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":3995},{"VI":3913},{"title":3997},{"VI":3998},"Su Liu",{"url":3877,"publisher":4000,"properties":4028},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":4001,"slug":663,"properties":4002,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":4006,"manageAffiliations":4007,"indexDatabases":4008,"url":26,"thumbnailPath":26,"statistic":4023,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":4003,"eissn":4004,"title":4005},{"VOID":666},{"VOID":668},{"EN":670},[],[],[4009,4016],{"id":727,"indexDatabase":4010,"url":740,"indexYears":741,"academicFieldIds":4015,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":4011,"label":4012,"description":4013,"key":737,"publicationTags":4014,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":4017,"url":764,"indexYears":26,"academicFieldIds":4022,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":4018,"label":4019,"description":4020,"key":760,"publicationTags":4021,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":4024,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":4025,"totalCitation":782,"totalCitationByYear":4026,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":4027,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"volume":4029,"pages":4030},{"VOID":2972},{"VOID":4031},"432-438",{"total":29,"publishYear":2980,"statisticByYear":4033},{"2014":114,"2015":158,"2016":158,"2017":111,"2018":114,"2019":158,"2020":158,"2021":50,"2022":115,"2023":162,"2024":115},"2014-01-01","2026-05-25T12:40:24.262+00:00",[4037,4043,4046,4049,4052,4055,4058,4061,4064,4067,4070,4073,4076,4079,4082,4085,4088,4091,4094,4097,4100,4103,4106,4109,4112,4119,4125,4128,4131,4134,4137,4140],{"id":4038,"text":4039,"url":4040,"identifiers":4041},"4c68646b-0035-4279-8000-0006b275d4fa","Meijer, G.I.: Who wins the nonvolatile memory race? Science 319(5870), 1625–1626 (2008)","https:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10440-022-00541-7",{"doi":4042},"10.1007\u002Fs10440-022-00541-7",{"id":4038,"text":4044,"url":4040,"identifiers":4045},"Waser, R., Aono, M.: Nanoionics-based resistive switching memories. Nat. Mater. 6(11), 833–840 (2007)",{"doi":4042},{"id":4038,"text":4047,"url":4040,"identifiers":4048},"Waser, R., Dittmann, R., Staikov, G., Szot, K.: Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21(25–26), 2632–2663 (2009)",{"doi":4042},{"id":4038,"text":4050,"url":4040,"identifiers":4051},"Linn, E., Rosezin, R., Kugeler, C., Waser, R.: Complementary resistive switches for passive nanocrossbar memories. Nat. Mater. 9(5), 403–406 (2010)",{"doi":4042},{"id":4038,"text":4053,"url":4040,"identifiers":4054},"Yu, S., Wong, H.-S.: Compact modeling of conducting-bridge random-access memory (CBRAM). IEEE Trans. Electron Devices 58(5), 1352–1360 (2011)",{"doi":4042},{"id":4038,"text":4056,"url":4040,"identifiers":4057},"Russo, U., Kamalanathan, D., Ielmini, D., Lacaita, A.L., Kozicki, M.N.: Study of multilevel programming in programmable metalization cell (PMC) memory. IEEE Trans. Electron Devices 56(5), 1040–1047 (2009)",{"doi":4042},{"id":4038,"text":4059,"url":4040,"identifiers":4060},"Liu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., Li, Y., Sun, L., Liu, M.: Real-time observation on dynamic growth\u002Fdissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv. Mater. 24(14), 1844–1849 (2012)",{"doi":4042},{"id":4038,"text":4062,"url":4040,"identifiers":4063},"Zhuge, F., Peng, S., He, C., Zhu, X., Chen, X., Liu, Y., Li, R.-W.: Improvement of resistive switching in Cu\u002FZnO\u002FPt sandwiches by weakening the randomicity of the formation\u002Frupture of Cu filaments. Nanotechnology 22(27), 275204 (2011)",{"doi":4042},{"id":4038,"text":4065,"url":4040,"identifiers":4066},"Rozenberg, M.J., Inoue, I.H., Sánchez, M.J.: Nonvolatile memory with multilevel switching: a basic model. Phys. Rev. Lett. 92(17), 178302 (2004)",{"doi":4042},{"id":4038,"text":4068,"url":4040,"identifiers":4069},"Nian, Y.B., Strozier, J., Wu, N.J., Chen, X., Ignatiev, A.: Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Phys. Rev. Lett. 98(14), 146403 (2007)",{"doi":4042},{"id":4038,"text":4071,"url":4040,"identifiers":4072},"Chang, S.H., Lee, J.S., Chae, S.C., Lee, S.B., Liu, C., Kahng, B., Kim, D.W., Noh, T.W.: Occurrence of both unipolar memory and threshold resistance switching in a NiO film. Phys. Rev. Lett. 102(2), 026801 (2009)",{"doi":4042},{"id":4038,"text":4074,"url":4040,"identifiers":4075},"Lee, J.S., Lee, S.B., Chang, S.H., Gao, L.G., Kang, B.S., Lee, M.J., Kim, C.J., Noh, T.W., Kahng, B.: Scaling theory for unipolar resistance switching. Phys. Rev. Lett. 105(20), 205701 (2010)",{"doi":4042},{"id":4038,"text":4077,"url":4040,"identifiers":4078},"Hur, J.H., Lee, M.-J., Lee, C.B., Kim, Y.-B., Kim, C.-J.: Modeling for bipolar resistive memory switching in transition-metal oxides. Phys. Rev. B 82(15), 155321 (2010)",{"doi":4042},{"id":26,"text":4080,"url":26,"identifiers":4081},"Wang, Z., Yu, H., Tran, X.A., Fang, Z., Wang, J., Su, H.: Transport properties of HfO2−x based resistive-switching memories. Phys. Rev. B 85(19), 195322 (2012)",{},{"id":26,"text":4083,"url":26,"identifiers":4084},"Xue, K.-H., Blaise, P., Fonseca, L.R.C., Nishi, Y.: Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles. Phys. Rev. Lett. 110(6), 065502 (2013)",{},{"id":4038,"text":4086,"url":4040,"identifiers":4087},"Russo, U., Ielmini, D., Cagli, C., Lacaita, A.L.: Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices. IEEE Trans. Electron Devices 56(2), 193–200 (2009)",{"doi":4042},{"id":4038,"text":4089,"url":4040,"identifiers":4090},"Sato, Y., Kinoshita, K., Aoki, M., Sugiyama, Y.: Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model. Appl. Phys. Lett. 90(3), 033503 (2007)",{"doi":4042},{"id":4038,"text":4092,"url":4040,"identifiers":4093},"Liang, Z., Jinyu, Z., Yu, H., Ximeng, G., He, Q., Zhiping, Y.: Dynamic modeling and atomistic simulations of SET and RESET operations in TiO2-based unipolar resistive memory. IEEE Electron Device Lett. 32(5), 677–679 (2011)",{"doi":4042},{"id":4038,"text":4095,"url":4040,"identifiers":4096},"Bersuker, G., Gilmer, D.C., Veksler, D., Yum, J., Park, H., Lian, S., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., Nafria, M., Taylor, W., Kirsch, P.D., Jammy, R.: Metal oxide RRAM switching mechanism based on conductive filament microscopic properties. In: Electron Devices Meeting (IEDM), 2010 IEEE International, 6–8 Dec. 2010, pp. 19.16.11–19.16.14 (2010)",{"doi":4042},{"id":4038,"text":4098,"url":4040,"identifiers":4099},"Chang, S.H., Chae, S.C., Lee, S.B., Liu, C., Noh, T.W., Lee, J.S., Kahng, B., Jang, J.H., Kim, M.Y., Kim, D.W., Jung, C.U.: Effects of heat dissipation on unipolar resistance switching in Pt\u002FNiO\u002FPt capacitors. Appl. Phys. Lett. 92(18), 183507 (2008)",{"doi":4042},{"id":4038,"text":4101,"url":4040,"identifiers":4102},"Kim, K.M., Hwang, C.S.: The conical shape filament growth model in unipolar resistance switching of TiO[2] thin film. Appl. Phys. Lett. 94(12), 122109 (2009)",{"doi":4042},{"id":4038,"text":4104,"url":4040,"identifiers":4105},"Larentis, S., Nardi, F., Balatti, S., Gilmer, D.C., Ielmini, D.: Resistive switching by voltage-driven ion migration in bipolar RRAM-part II: Modeling. IEEE Trans. Electron Devices 59(9), 2468–2475 (2012)",{"doi":4042},{"id":26,"text":4107,"url":26,"identifiers":4108},"Guan, W., Liu, M., Long, S., Liu, Q., Wang, W.: On the resistive switching mechanisms of Cu\u002FZrO[2]:Cu\u002FPt. Appl. Phys. Lett. 93(22), 223506 (2008)",{},{"id":26,"text":4110,"url":26,"identifiers":4111},"Standards, U.S.B.o.: Copper wire tables. Government Printing Office (1914)",{},{"id":4113,"text":4114,"url":4115,"identifiers":4116},"b250e88f-4511-4d0c-85ed-f0f4176aae90","Lide, D.R., Bruno, T.J.: CRC Handbook of Chemistry and Physics. CRC Press, Boca Raton (2010)","https:\u002F\u002Fwww.goodreads.com\u002Fbook\u002Fshow\u002F952793.CRC_Handbook_of_Chemistry_and_Physics",{"isbn":4117,"isbn13":4118},"0849304881","9780849304880",{"id":4120,"text":4121,"url":4122,"identifiers":4123},"86e4e184-c732-4d1c-b75d-be5ac72b72c1","Tojo, T., Atake, T., Mori, T., Yamamura, H.: Heat capacity and thermodynamic functions of zirconia and yttria-stabilized zirconia. J. Chem. Thermodyn. 31(7), 831–845 (1999)","https:\u002F\u002Fwww.sciencedirect.com\u002Fscience\u002Farticle\u002Fpii\u002FS0021961498904815",{"doi":4124},"10.1006\u002Fjcht.1998.0481",{"id":26,"text":4126,"url":26,"identifiers":4127},"Liu, Q., Long, S., Wang, W., Zuo, Q., Zhang, S., Chen, J., Liu, M.: Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions. IEEE Electron Device Lett. 30(12), 1335 (2009)",{},{"id":4038,"text":4129,"url":4040,"identifiers":4130},"Pulfrey, D.L., Shousha, A.H.M., Young, L.: Electronic conduction and space charge in amorphous insulating films. J. Appl. Phys. 41(7), 2838–2843 (1970)",{"doi":4042},{"id":4038,"text":4132,"url":4040,"identifiers":4133},"Banno, N., Sakamoto, T., Iguchi, N., Sunamura, H., Terabe, K., Hasegawa, T., Aono, M.: Diffusivity of cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch. IEEE Trans. Electron Devices 55(11), 3283–3287 (2008)",{"doi":4042},{"id":4038,"text":4135,"url":4040,"identifiers":4136},"Bange, S., Schubert, M., Neher, D.: Charge mobility determination by current extraction under linear increasing voltages: case of nonequilibrium charges and field-dependent mobilities. Phys. Rev. B 81(3), 035209 (2010)",{"doi":4042},{"id":4038,"text":4138,"url":4040,"identifiers":4139},"Ielmini, D.: Modeling the universal set\u002Freset characteristics of bipolar RRAM by field-and temperature-driven filament growth. IEEE Trans. Electron Devices 58(12), 4309–4317 (2011)",{"doi":4042},{"id":4038,"text":4141,"url":4040,"identifiers":4142},"Lee, H., Chen, P., Wu, T., Chen, Y., Wang, C., Tzeng, P., Lin, C., Chen, F., Lien, C., Tsai, M.-J.: Low power and high speed bipolar switching with a thin reactive ti buffer layer in robust HfO2 based RRAM. In: Electron Devices Meeting, 2008 (IEDM 2008), pp. 1–4. IEEE Press, New York (2008)",{"doi":4042},{"id":4144,"createTime":4145,"updateTime":4146,"relativeEntities":4147,"slug":4148,"properties":4149,"entityType":836,"verifyStatus":25,"verifyTime":4146,"verifyNote":837,"syncStatus":28,"languages":4160,"translateLanguages":26,"viewCount":36,"primaryUrl":4161,"fullTextUrl":26,"authors":4162,"publicationType":881,"publisherRelationship":4184,"citationCount":358,"citationInfo":4219,"publishDate":4221,"publishYear":4222,"citationAnalyzeStatus":28,"lastCitationAnalyze":26,"indexDatabases":26,"openAccess":26,"references":4223,"isForceReanalyzing":1221},"b4a054e4-d71d-4ece-98ae-dc7833a49352","2024-04-20T05:55:24.433+00:00","2025-01-10T04:08:38.400+00:00",[],"Ion-Channels-as-Devices",{"mag":4150,"keywords":4152,"openalex":4153,"abstract":4155,"title":4156,"doi":4158},{"VOID":4151},"2154711615",{},{"VOID":4154},"W2154711615",{},{"EN":4157},"Ion Channels as Devices",{"VOID":4159},"10.1023\u002Fb:jcel.0000011432.03832.22",[102],"http:\u002F\u002Flink.springer.com\u002F10.1023\u002FB:JCEL.0000011432.03832.22",[4163],{"id":4164,"sortIndex":36,"researcher":26,"roles":4165,"affiliations":4166,"properties":4177},"8c279b9e-668f-4d77-85ac-995d307e5325",[],[4167],{"id":4168,"sortIndex":36,"affiliation":4169,"properties":26},"1125b925-f957-4168-85e2-738dae75262a",{"id":4170,"createTime":4171,"updateTime":4171,"relativeEntities":4172,"slug":4173,"properties":4174,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"acb16ab4-5f3e-4cb7-9093-a844710413af","2024-04-20T05:55:24.441+00:00",[],"Department-of-Molecular-Biophysics-Rush-Medical-College-Chicago-USA",{"title":4175},{"EN":4176},"Department of Molecular Biophysics, Rush Medical College, Chicago, USA",{"openalex":4178,"orcid":4180,"title":4182},{"VOID":4179},"A5091003144",{"VOID":4181},"https:\u002F\u002Forcid.org\u002F0000-0002-4860-5434",{"EN":4183},"Robert S. Eisenberg",{"url":26,"publisher":4185,"properties":4213},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":4186,"slug":663,"properties":4187,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":4191,"manageAffiliations":4192,"indexDatabases":4193,"url":26,"thumbnailPath":26,"statistic":4208,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":4188,"eissn":4189,"title":4190},{"VOID":666},{"VOID":668},{"EN":670},[],[],[4194,4201],{"id":727,"indexDatabase":4195,"url":740,"indexYears":741,"academicFieldIds":4200,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":4196,"label":4197,"description":4198,"key":737,"publicationTags":4199,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":4202,"url":764,"indexYears":26,"academicFieldIds":4207,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":4203,"label":4204,"description":4205,"key":760,"publicationTags":4206,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":4209,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":4210,"totalCitation":782,"totalCitationByYear":4211,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":4212,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"volume":4214,"pages":4215,"issue":4217},{"VOID":3250},{"VOID":4216},"245-249",{"VOID":4218},"2-4",{"total":358,"publishYear":26,"statisticByYear":4220},{"2012":59,"2013":59,"2014":115,"2015":114,"2016":115,"2017":114,"2018":111,"2019":114,"2020":162,"2021":111,"2022":162,"2024":115},"2003-12-01",2003,[],{"id":4225,"createTime":4226,"updateTime":4227,"relativeEntities":4228,"slug":4229,"properties":4230,"entityType":836,"verifyStatus":25,"verifyTime":4227,"verifyNote":837,"syncStatus":28,"languages":4241,"translateLanguages":26,"viewCount":36,"primaryUrl":4242,"fullTextUrl":26,"authors":4243,"publicationType":881,"publisherRelationship":4381,"citationCount":284,"citationInfo":4410,"publishDate":4412,"publishYear":1332,"citationAnalyzeStatus":915,"lastCitationAnalyze":4413,"indexDatabases":26,"openAccess":26,"references":4414,"isForceReanalyzing":1221},"d9a87f85-349d-40b3-918c-cc0559d88b29","2024-04-14T18:51:57.114+00:00","2024-12-29T04:19:42.936+00:00",[],"A-comparative-study-of-broadband-solar-absorbers-with-different-gold-metasurfaces-and-MgF2-on-tungsten-substrates",{"mag":4231,"keywords":4233,"openalex":4234,"abstract":4236,"title":4237,"doi":4239},{"VOID":4232},"3183374169",{},{"VOID":4235},"W3183374169",{},{"EN":4238},"A comparative study of broadband solar absorbers with different gold metasurfaces and MgF2 on tungsten substrates",{"VOID":4240},"10.1007\u002Fs10825-021-01746-z",[102],"https:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-021-01746-z",[4244,4265,4284,4303,4319,4339,4360],{"id":4245,"sortIndex":162,"researcher":26,"roles":4246,"affiliations":4247,"properties":4258},"90db8a0f-8c30-4b78-879d-e316d07038de",[],[4248],{"id":26,"sortIndex":36,"affiliation":4249,"properties":26},{"id":4250,"createTime":4251,"updateTime":4252,"relativeEntities":4253,"slug":4254,"properties":4255,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"56645e3b-3757-4801-a3cf-de03d8241fe0","2023-12-06T03:39:37.366+00:00","2024-10-03T03:40:15.974+00:00",[],"Department-of-Electrical-Engineering-College-of-Engineering-Taif-University-Taif-Saudi-Arabia",{"title":4256},{"VI":4257},"Department of Electrical Engineering, College of Engineering, Taif University, Taif, Saudi Arabia",{"openalex":4259,"orcid":4261,"title":4263},{"VOID":4260},"A5010885446",{"VOID":4262},"https:\u002F\u002Forcid.org\u002F0000-0002-0423-7983",{"EN":4264},"Mahmoud M. A. Eid",{"id":4266,"sortIndex":111,"researcher":26,"roles":4267,"affiliations":4268,"properties":4277},"42205cae-702c-47cc-90ea-07a5e8f81ea0",[],[4269],{"id":26,"sortIndex":36,"affiliation":4270,"properties":26},{"id":4271,"createTime":4272,"updateTime":4272,"relativeEntities":4273,"slug":26,"properties":4274,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"3e92d3be-c667-444f-b152-0246a325f06b","2024-02-07T08:31:54.807+00:00",[],{"title":4275},{"VI":4276},"Department of Electrical Engineering, Faculty of Engineering, Menoufia University, Shebin El-kom, Egypt",{"openalex":4278,"orcid":4280,"title":4282},{"VOID":4279},"A5067404637",{"VOID":4281},"https:\u002F\u002Forcid.org\u002F0000-0002-2776-783X",{"EN":4283},"Hala S. El‐Sayed",{"id":4285,"sortIndex":36,"researcher":26,"roles":4286,"affiliations":4287,"properties":4296},"25882ad2-d393-43a0-8c65-23ed8cf72050",[],[4288],{"id":26,"sortIndex":36,"affiliation":4289,"properties":26},{"id":4290,"createTime":4291,"updateTime":4291,"relativeEntities":4292,"slug":26,"properties":4293,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"3f770caa-973d-4774-a12f-db5300d61fb1","2023-12-18T00:20:04.845+00:00",[],{"title":4294},{"VI":4295},"Department of Information and Communication Technology, Marwadi University, Rajkot, India",{"openalex":4297,"orcid":4299,"title":4301},{"VOID":4298},"A5004264217",{"VOID":4300},"https:\u002F\u002Forcid.org\u002F0000-0002-6121-5940",{"EN":4302},"Vishal Sorathiya",{"id":4304,"sortIndex":115,"researcher":26,"roles":4305,"affiliations":4306,"properties":4312},"008e0310-cf81-42a4-9ef7-d5108916f443",[],[4307],{"id":26,"sortIndex":36,"affiliation":4308,"properties":26},{"id":4290,"createTime":4291,"updateTime":4291,"relativeEntities":4309,"slug":26,"properties":4310,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":4311},{"VI":4295},{"openalex":4313,"orcid":4315,"title":4317},{"VOID":4314},"A5032058129",{"VOID":4316},"https:\u002F\u002Forcid.org\u002F0000-0003-0565-0857",{"EN":4318},"Sunil Lavadiya",{"id":4320,"sortIndex":114,"researcher":26,"roles":4321,"affiliations":4322,"properties":4332},"fbdc440a-d71b-4cc2-8026-a5062f7c4305",[],[4323],{"id":26,"sortIndex":36,"affiliation":4324,"properties":26},{"id":4325,"createTime":4326,"updateTime":4326,"relativeEntities":4327,"slug":4328,"properties":4329,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"1b81e7ef-49f9-495d-b909-e74ad8a1e255","2024-04-07T12:11:54.537+00:00",[],"Department-of-Computer-Engineering-College-of-Computers-and-Information-Technology-Taif-University-Taif-Saudi-Arabia",{"title":4330},{"VI":4331},"Department of Computer Engineering, College of Computers and Information Technology, Taif University, Taif, Saudi Arabia",{"openalex":4333,"orcid":4335,"title":4337},{"VOID":4334},"A5090377506",{"VOID":4336},"https:\u002F\u002Forcid.org\u002F0000-0002-9165-7600",{"EN":4338},"Ahmed Saeed AlGhamdi",{"id":4340,"sortIndex":135,"researcher":26,"roles":4341,"affiliations":4342,"properties":4353},"ebcc18a7-2bdf-4c1f-b96f-53a1454f3abb",[],[4343],{"id":26,"sortIndex":36,"affiliation":4344,"properties":26},{"id":4345,"createTime":4346,"updateTime":4347,"relativeEntities":4348,"slug":4349,"properties":4350,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"07fa8121-db14-4f83-8872-0369e5437794","2023-12-08T16:44:46.047+00:00","2025-06-11T20:59:41.149+00:00",[],"Electronics-and-Electrical-Communications-Engineering-Department-Faculty-of-Electronic-Engineering-Menoufia-University-Menouf-Egypt",{"title":4351},{"VI":4352},"Electronics and Electrical Communications Engineering Department, Faculty of Electronic Engineering, Menoufia University, Menouf, Egypt",{"openalex":4354,"orcid":4356,"title":4358},{"VOID":4355},"A5053107270",{"VOID":4357},"https:\u002F\u002Forcid.org\u002F0000-0002-5338-1623",{"EN":4359},"Ahmed Nabih Zaki Rashed",{"id":4361,"sortIndex":59,"researcher":26,"roles":4362,"affiliations":4363,"properties":4374},"6832f65d-e82d-4969-bd51-43b58a3a594e",[],[4364],{"id":26,"sortIndex":36,"affiliation":4365,"properties":26},{"id":4366,"createTime":4367,"updateTime":4368,"relativeEntities":4369,"slug":4370,"properties":4371,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"0ef9257d-0e64-4671-9328-b9fee68d5267","2024-01-25T15:03:09.140+00:00","2024-09-29T09:22:00.482+00:00",[],"Department-of-Information-Technology-College-of-Computers-and-Information-Technology-Taif-University-Taif-Saudi-Arabia",{"title":4372},{"VI":4373},"Department of Information Technology, College of Computers and Information Technology, Taif University, Taif, Saudi Arabia",{"openalex":4375,"orcid":4377,"title":4379},{"VOID":4376},"A5014295449",{"VOID":4378},"https:\u002F\u002Forcid.org\u002F0000-0003-1982-335X",{"EN":4380},"Osama S. Faragallah",{"url":26,"publisher":4382,"properties":26},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":4383,"slug":663,"properties":4384,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":4388,"manageAffiliations":4389,"indexDatabases":4390,"url":26,"thumbnailPath":26,"statistic":4405,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":4385,"eissn":4386,"title":4387},{"VOID":666},{"VOID":668},{"EN":670},[],[],[4391,4398],{"id":727,"indexDatabase":4392,"url":740,"indexYears":741,"academicFieldIds":4397,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":4393,"label":4394,"description":4395,"key":737,"publicationTags":4396,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":4399,"url":764,"indexYears":26,"academicFieldIds":4404,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":4400,"label":4401,"description":4402,"key":760,"publicationTags":4403,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":4406,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":4407,"totalCitation":782,"totalCitationByYear":4408,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":4409,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"total":284,"publishYear":26,"statisticByYear":4411},{"2022":336,"2023":255},"2021-10-01","2024-04-15T09:46:12.163+00:00",[4415,4419,4423,4427,4431,4435,4439,4443,4447,4451,4455,4459,4463,4467,4471,4475,4479,4483,4487,4491,4495,4499,4503,4507,4511,4515,4519,4523,4527,4531,4535,4539,4543,4547,4551,4555,4559,4563,4567,4571,4575,4579,4583,4587,4591,4595,4599,4603,4607],{"id":26,"text":4416,"url":26,"identifiers":4417},"Soukoulis, C.M., Wegener, M.: Past achievements and future challenges in the development of three-dimensional photonic metamaterials. Nat. Photonics 5, 523–30 (2011). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnphoton.2011.154",{"doi":4418},"10.1038\u002Fnphoton.2011.154",{"id":26,"text":4420,"url":26,"identifiers":4421},"Cai, W., Shalaev, V.: Optical Metamaterials: Fundamentals and Applications. Springer, New York (2010). https:\u002F\u002Fdoi.org\u002F10.1007\u002F978-1-4419-1151-3",{"doi":4422},"10.1007\u002F978-1-4419-1151-3",{"id":26,"text":4424,"url":26,"identifiers":4425},"Watts, C.M., Liu, X., Padilla, W.J.: Metamaterial electromagnetic wave absorbers. Adv. Mater. 24, OP98-120 (2012). https:\u002F\u002Fdoi.org\u002F10.1002\u002Fadma.201200674",{"doi":4426},"10.1002\u002Fadma.201200674",{"id":26,"text":4428,"url":26,"identifiers":4429},"Yu, P., Yang, H., Chen, X., Yi, Z., Yao, W., Chen, J., et al.: Ultra-wideband solar absorber based on refractory titanium metal. Renew. Energy 158, 227–35 (2020). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.renene.2020.05.142",{"doi":4430},"10.1016\u002Fj.renene.2020.05.142",{"id":26,"text":4432,"url":26,"identifiers":4433},"Shen, X., Cui, T.J., Zhao, J., Ma, H.F., Jiang, W.X., Li, H.: Polarization-independent wide-angle triple-band metamaterial absorber. Opt. Express 19, 9401 (2011). https:\u002F\u002Fdoi.org\u002F10.1364\u002Foe.19.009401",{"doi":4434},"10.1364\u002Foe.19.009401",{"id":26,"text":4436,"url":26,"identifiers":4437},"Chen, H.-T.: Interference theory of metamaterial perfect absorbers. Opt. Express 20, 7165 (2012). https:\u002F\u002Fdoi.org\u002F10.1364\u002FOE.20.007165",{"doi":4438},"10.1364\u002FOE.20.007165",{"id":26,"text":4440,"url":26,"identifiers":4441},"Liu, H., Xie, M., Ai, Q., Yu, Z.: Ultra-broadband selective absorber for near-perfect harvesting of solar energy. J. Quant. Spectrosc. Radiat. Transf. 266, 107575 (2021). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jqsrt.2021.107575",{"doi":4442},"10.1016\u002Fj.jqsrt.2021.107575",{"id":26,"text":4444,"url":26,"identifiers":4445},"Roostaei, N., Mbarak, H., Monfared, S.A., Hamidi, S.M.: Plasmonic wideband and tunable absorber based on semi etalon nano structure in the visible region. Phys. Scr. 96, 035805 (2021). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1402-4896\u002Fabdbf6",{"doi":4446},"10.1088\u002F1402-4896\u002Fabdbf6",{"id":26,"text":4448,"url":26,"identifiers":4449},"Huang, L., Chowdhury, D.R., Ramani, S., Reiten, M.T., Luo, S.-N., Taylor, A.J., et al.: Experimental demonstration of terahertz metamaterial absorbers with a broad and flat high absorption band. Opt. Lett. 37, 154 (2012). https:\u002F\u002Fdoi.org\u002F10.1364\u002FOL.37.000154",{"doi":4450},"10.1364\u002FOL.37.000154",{"id":26,"text":4452,"url":26,"identifiers":4453},"Wang, B.X., Zhai, X., Wang, G.Z., Huang, W.Q., Wang, L.L.: Design of a four-band and polarization-insensitive terahertz metamaterial absorber. IEEE Photonics J. 7, 1–8 (2015). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPHOT.2014.2381633",{"doi":4454},"10.1109\u002FJPHOT.2014.2381633",{"id":26,"text":4456,"url":26,"identifiers":4457},"Zhu, P., Jay, Guo L.: High performance broadband absorber in the visible band by engineered dispersion and geometry of a metal-dielectric-metal stack. Appl. Phys. Lett. 101, 241116 (2012). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4771994",{"doi":4458},"10.1063\u002F1.4771994",{"id":26,"text":4460,"url":26,"identifiers":4461},"Hossain, I., Samsuzzaman, M., Moniruzzaman, M., Bais, B.B., Singh, M.S.J., Islam, M.T.: Polarization-independent broadband optical regime metamaterial absorber for solar harvesting: a numerical approach. Chin. J. Phys. 71, 699–715 (2021). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.cjph.2021.04.007",{"doi":4462},"10.1016\u002Fj.cjph.2021.04.007",{"id":26,"text":4464,"url":26,"identifiers":4465},"Gokhale, V.J., Shenderova, O.A., McGuire, G.E., Rais-Zadeh, M.: Infrared absorption properties of carbon nanotube\u002Fnanodiamond based thin film coatings. J. Microelectromech. Syst. 23, 191–7 (2014). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJMEMS.2013.2266411",{"doi":4466},"10.1109\u002FJMEMS.2013.2266411",{"id":26,"text":4468,"url":26,"identifiers":4469},"Deng, H., Li, Z., Stan, L., Rosenmann, D., Czaplewski, D., Gao, J., et al.: Broadband perfect absorber based on one ultrathin layer of refractory metal. Opt. Lett. 40, 2592 (2015). https:\u002F\u002Fdoi.org\u002F10.1364\u002FOL.40.002592",{"doi":4470},"10.1364\u002FOL.40.002592",{"id":26,"text":4472,"url":26,"identifiers":4473},"Wang, B.-X., Xie, Q., Dong, G., Huang, W.-Q.: Simplified design for broadband and polarization-insensitive terahertz metamaterial absorber. IEEE Photonics Technol. Lett. 30, 1115–8 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLPT.2018.2834902",{"doi":4474},"10.1109\u002FLPT.2018.2834902",{"id":26,"text":4476,"url":26,"identifiers":4477},"Biabanifard, S.: A graphene-based dual-band THz absorber design exploiting the impedance-matching concept. J. Comput. Electron. 20, 38–48 (2021). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs10825-020-01589-0",{"doi":4478},"10.1007\u002Fs10825-020-01589-0",{"id":26,"text":4480,"url":26,"identifiers":4481},"Soltani, M., Najafi, A., Chaharmahali, I., Biabanifard, S.: A configurable two-layer four-bias graphene-based THz absorber. J. Comput. Electron. 19, 719–35 (2020). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs10825-020-01462-0",{"doi":4482},"10.1007\u002Fs10825-020-01462-0",{"id":26,"text":4484,"url":26,"identifiers":4485},"Bossard, J.A., Lin, L., Yun, S., Liu, L., Werner, D.H., Mayer, T.S.: Near-ideal optical metamaterial absorbers with super-octave bandwidth. ACS Nano 8, 1517–24 (2014). https:\u002F\u002Fdoi.org\u002F10.1021\u002Fnn4057148",{"doi":4486},"10.1021\u002Fnn4057148",{"id":26,"text":4488,"url":26,"identifiers":4489},"Chen, Y., Liu, F., Liu, H., Yi, F., Zhou, H., Tan, X., et al.: Meander line nanoantenna absorber for subwavelength terahertz detection. IEEE Photonics J. 10, 1–9 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPHOT.2018.2843530",{"doi":4490},"10.1109\u002FJPHOT.2018.2843530",{"id":26,"text":4492,"url":26,"identifiers":4493},"Yan, M., Dai, J., Qiu, M.: Lithography-free broadband visible light absorber based on a mono-layer of gold nanoparticles. J. Opt. 16, 025002 (2014). https:\u002F\u002Fdoi.org\u002F10.1088\u002F2040-8978\u002F16\u002F2\u002F025002",{"doi":4494},"10.1088\u002F2040-8978\u002F16\u002F2\u002F025002",{"id":26,"text":4496,"url":26,"identifiers":4497},"Wang, H., Prasad Sivan, V., Mitchell, A., Rosengarten, G., Phelan, P., Wang, L.: Highly efficient selective metamaterial absorber for high-temperature solar thermal energy harvesting. Sol. Energy Mater. Sol. Cells 137, 235–42 (2015). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.solmat.2015.02.019",{"doi":4498},"10.1016\u002Fj.solmat.2015.02.019",{"id":26,"text":4500,"url":26,"identifiers":4501},"Clemens, S., Iskander, M.F., Yun, Z., Rayno, J.: Hybrid genetic programming for the development of metamaterials designs with improved characteristics. IEEE Antennas Wirel. Propag. Lett. 17, 513–6 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLAWP.2018.2800057",{"doi":4502},"10.1109\u002FLAWP.2018.2800057",{"id":26,"text":4504,"url":26,"identifiers":4505},"Atwater, H.A., Polman, A.: Plasmonics for improved photovoltaic devices. Nat. Mater. 9, 205–13 (2010). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnmat2629",{"doi":4506},"10.1038\u002Fnmat2629",{"id":26,"text":4508,"url":26,"identifiers":4509},"Xiong, F., Zhang, J., Zhu, Z., Yuan, X., Qin, S.: Ultrabroadband, more than one order absorption enhancement in graphene with plasmonic light trapping. Sci. Rep. 5, 16998 (2015). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep16998",{"doi":4510},"10.1038\u002Fsrep16998",{"id":26,"text":4512,"url":26,"identifiers":4513},"Zhang, J., Tian, J., Li, L.: A dual-band tunable metamaterial near-unity absorber composed of periodic cross and disk graphene arrays. IEEE Photonics J. 10, 1–12 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJPHOT.2018.2815685",{"doi":4514},"10.1109\u002FJPHOT.2018.2815685",{"id":26,"text":4516,"url":26,"identifiers":4517},"Lenert, A., Bierman, D.M., Nam, Y., Chan, W.R., Celanović, I., Soljačić, M., et al.: A nanophotonic solar thermophotovoltaic device. Nat. Nanotechnol. 9, 126–30 (2014). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2013.286",{"doi":4518},"10.1038\u002Fnnano.2013.286",{"id":26,"text":4520,"url":26,"identifiers":4521},"Akimov, Y.A., Koh, W.S.: Resonant and nonresonant plasmonic nanoparticle enhancement for thin-film silicon solar cells. Nanotechnology 21, 235201 (2010). https:\u002F\u002Fdoi.org\u002F10.1088\u002F0957-4484\u002F21\u002F23\u002F235201",{"doi":4522},"10.1088\u002F0957-4484\u002F21\u002F23\u002F235201",{"id":26,"text":4524,"url":26,"identifiers":4525},"Azad, A.K., Kort-Kamp, W.J.M., Sykora, M., Weisse-Bernstein, N.R., Luk, T.S., Taylor, A.J., et al.: Metasurface broadband solar absorber. Sci. Rep. 6, 20347 (2016). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fsrep20347",{"doi":4526},"10.1038\u002Fsrep20347",{"id":26,"text":4528,"url":26,"identifiers":4529},"Nieto-Nieto, L.M., Ferrer-Rodríguez, J.P., Muñoz-Cerón, E., Pérez-Higueras, P.: Experimental set-up for testing MJ photovoltaic cells under ultra-high irradiance levels with temperature and spectrum control. Measurement 165, 108092 (2020). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.measurement.2020.108092",{"doi":4530},"10.1016\u002Fj.measurement.2020.108092",{"id":26,"text":4532,"url":26,"identifiers":4533},"Leitão, D., Torres, J.P.N., Fernandes, J.F.P.: Spectral irradiance influence on solar cells efficiency. Energies 13, 5017 (2020). https:\u002F\u002Fdoi.org\u002F10.3390\u002Fen13195017",{"doi":4534},"10.3390\u002Fen13195017",{"id":26,"text":4536,"url":26,"identifiers":4537},"Brüggemann, D., Wolfrum, B., de Silva, J.P.: Fabrication, properties and applications of gold nanopillars. Handb. Nanomater. Prop. (2014). https:\u002F\u002Fdoi.org\u002F10.1007\u002F978-3-642-31107-9_55",{"doi":4538},"10.1007\u002F978-3-642-31107-9_55",{"id":26,"text":4540,"url":26,"identifiers":4541},"Markelonis, A.R., Wang, J.S., Ullrich, B., Wai, C.M., Brown, G.J.: Nanoparticle film deposition using a simple and fast centrifuge sedimentation method. Appl. Nanosci. 5, 457–68 (2015). https:\u002F\u002Fdoi.org\u002F10.1007\u002Fs13204-014-0338-x",{"doi":4542},"10.1007\u002Fs13204-014-0338-x",{"id":26,"text":4544,"url":26,"identifiers":4545},"Wen, Q.-Y., Zhang, H.-W., Xie, Y.-S., Yang, Q.-H., Liu, Y.-L.: Dual band terahertz metamaterial absorber: design, fabrication, and characterization. Appl. Phys. Lett. 95, 241111 (2009). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.3276072",{"doi":4546},"10.1063\u002F1.3276072",{"id":26,"text":4548,"url":26,"identifiers":4549},"Cinel, N.A., Bütün, S., Özbay, E.: Electron beam lithography designed silver nano-disks used as label free nano-biosensors based on localized surface plasmon resonance. Opt. Express 20, 2587 (2012). https:\u002F\u002Fdoi.org\u002F10.1364\u002FOE.20.002587",{"doi":4550},"10.1364\u002FOE.20.002587",{"id":26,"text":4552,"url":26,"identifiers":4553},"Tao, H., Landy, N.I., Bingham, C.M., Zhang, X., Averitt, R.D., Padilla, W.J.: A metamaterial absorber for the terahertz regime: design, fabrication and characterization. Opt. Express 16, 7181 (2008). https:\u002F\u002Fdoi.org\u002F10.1364\u002FOE.16.007181",{"doi":4554},"10.1364\u002FOE.16.007181",{"id":26,"text":4556,"url":26,"identifiers":4557},"Gao, H., Peng, W., Chu, S., Cui, W., Liu, Z., Yu, L., et al.: Refractory ultra-broadband perfect absorber from visible to near-infrared. Nanomaterials 8, 1038 (2018). https:\u002F\u002Fdoi.org\u002F10.3390\u002Fnano8121038",{"doi":4558},"10.3390\u002Fnano8121038",{"id":26,"text":4560,"url":26,"identifiers":4561},"Ke S, Wang B, Lu P. Plasmonic absorption enhancement in periodic cross-shaped graphene arrays. 2015 IEEE MTT-S Int Microw Work Ser Adv Mater Process RF THz Appl IEEE MTT-S IMWS-AMP 2015 - Proc 2015;23:4810–7. https:\u002F\u002Fdoi.org\u002F10.1109\u002FIMWS-AMP.2015.7325015.",{"doi":4562},"10.1109\u002FIMWS-AMP.2015.7325015",{"id":26,"text":4564,"url":26,"identifiers":4565},"Rufangura, P., Sabah, C.: Graphene-based wideband metamaterial absorber for solar cells application. J. Nanophotonics 11, 036008 (2017). https:\u002F\u002Fdoi.org\u002F10.1117\u002F1.jnp.11.036008",{"doi":4566},"10.1117\u002F1.jnp.11.036008",{"id":26,"text":4568,"url":26,"identifiers":4569},"Avitzour, Y., Urzhumov, Y.A., Shvets, G.: Wide-angle infrared absorber based on a negative-index plasmonic metamaterial. Phys. Rev. B 79, 045131 (2009). https:\u002F\u002Fdoi.org\u002F10.1103\u002FPhysRevB.79.045131",{"doi":4570},"10.1103\u002FPhysRevB.79.045131",{"id":26,"text":4572,"url":26,"identifiers":4573},"Sang, T., Gao, J., Yin, X., Qi, H., Wang, L., Jiao, H.: Angle-insensitive broadband absorption enhancement of graphene using a multi-grooved metasurface. Nanoscale Res. Lett. 14, 105 (2019). https:\u002F\u002Fdoi.org\u002F10.1186\u002Fs11671-019-2937-7",{"doi":4574},"10.1186\u002Fs11671-019-2937-7",{"id":26,"text":4576,"url":26,"identifiers":4577},"Liu, Z.Q., Shao, H.B., Liu, G.Q., Liu, X.S., Zhou, H.Q., Hu, Y., et al.: Λ 3\u002F20000 Plasmonic nanocavities with multispectral ultra-narrowband absorption for high-quality sensing. Appl. Phys. Lett. 104, 2–6 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4867028",{"doi":4578},"10.1063\u002F1.4867028",{"id":26,"text":4580,"url":26,"identifiers":4581},"Liu, B., Tang, C., Chen, J., Xie, N., Tang, H., Zhu, X., et al.: Multiband and broadband absorption enhancement of monolayer graphene at optical frequencies from multiple magnetic dipole resonances in metamaterials. Nanoscale Res. Lett. 13, 153 (2018). https:\u002F\u002Fdoi.org\u002F10.1186\u002Fs11671-018-2569-3",{"doi":4582},"10.1186\u002Fs11671-018-2569-3",{"id":26,"text":4584,"url":26,"identifiers":4585},"Wu, C., Avitzour, Y., Shvets, G.: Ultra-thin wide-angle perfect absorber for infrared frequencies. Metamater. Fundam. Appl. 7029, 70290W (2008). https:\u002F\u002Fdoi.org\u002F10.1117\u002F12.797208",{"doi":4586},"10.1117\u002F12.797208",{"id":26,"text":4588,"url":26,"identifiers":4589},"Zhu, W., Zhao, X.: Metamaterial absorber with dendritic cells at infrared frequencies. J. Opt. Soc. Am. B 26, 2382 (2009). https:\u002F\u002Fdoi.org\u002F10.1364\u002Fjosab.26.002382",{"doi":4590},"10.1364\u002Fjosab.26.002382",{"id":26,"text":4592,"url":26,"identifiers":4593},"Yan, H., Li, X., Chandra, B., Tulevski, G., Wu, Y., Freitag, M., et al.: Tunable infrared plasmonic devices using graphene\u002Finsulator stacks. Nat Nanotechnol. 7, 330–4 (2012). https:\u002F\u002Fdoi.org\u002F10.1038\u002Fnnano.2012.59",{"doi":4594},"10.1038\u002Fnnano.2012.59",{"id":26,"text":4596,"url":26,"identifiers":4597},"Liu, N., Mesch, M., Weiss, T., Hentschel, M., Giessen, H.: Infrared perfect absorber and its application as plasmonic sensor. Nano Lett. 10, 2342 (2010)",{"doi":4598},"10.1021\u002Fnl9041033",{"id":26,"text":4600,"url":26,"identifiers":4601},"Chen, J., Nie, H., Zha, T., Mao, P., Tang, C., Shen, X., et al.: Optical magnetic field enhancement by strong coupling in metamaterials. J. Light Technol. 36, 2791–5 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FJLT.2018.2822777",{"doi":4602},"10.1109\u002FJLT.2018.2822777",{"id":26,"text":4604,"url":26,"identifiers":4605},"Pu, M., Hu, C., Wang, M., Huang, C., Zhao, Z., Wang, C., et al.: Design principles for infrared wide-angle perfect absorber based on plasmonic structure. Opt. Express 19, 17413 (2011). https:\u002F\u002Fdoi.org\u002F10.1364\u002FOE.19.017413",{"doi":4606},"10.1364\u002FOE.19.017413",{"id":26,"text":4608,"url":26,"identifiers":4609},"Wang, W., Yan, F., Tan, S., Zhou, H., Hou, Y.: Ultrasensitive terahertz metamaterial sensor based on vertical split ring resonators. Photonics Res. 5, 571 (2017). https:\u002F\u002Fdoi.org\u002F10.1364\u002Fprj.5.000571",{"doi":4610},"10.1364\u002Fprj.5.000571",{"id":4612,"createTime":4613,"updateTime":4614,"relativeEntities":4615,"slug":4616,"properties":4617,"entityType":836,"verifyStatus":25,"verifyTime":4614,"verifyNote":837,"syncStatus":28,"languages":4628,"translateLanguages":26,"viewCount":36,"primaryUrl":4629,"fullTextUrl":26,"authors":4630,"publicationType":881,"publisherRelationship":4687,"citationCount":539,"citationInfo":4716,"publishDate":4718,"publishYear":4719,"citationAnalyzeStatus":915,"lastCitationAnalyze":4720,"indexDatabases":26,"openAccess":26,"references":4721,"isForceReanalyzing":1221},"1fdf40cc-d495-4f21-a639-bd7e14d16099","2024-04-14T06:39:24.618+00:00","2025-02-01T22:34:48.681+00:00",[],"Heterogate-junctionless-tunnel-field-effect-transistor-future-of-low-power-devices",{"mag":4618,"keywords":4620,"openalex":4621,"abstract":4623,"title":4624,"doi":4626},{"VOID":4619},"2558268814",{},{"VOID":4622},"W2558268814",{},{"EN":4625},"Heterogate junctionless tunnel field-effect transistor: future of low-power devices",{"VOID":4627},"10.1007\u002Fs10825-016-0936-9",[102],"http:\u002F\u002Flink.springer.com\u002F10.1007\u002Fs10825-016-0936-9",[4631,4652,4671],{"id":4632,"sortIndex":114,"researcher":26,"roles":4633,"affiliations":4634,"properties":4645},"43f7c4f9-f31c-4b02-902a-186d61915a64",[],[4635],{"id":26,"sortIndex":36,"affiliation":4636,"properties":26},{"id":4637,"createTime":4638,"updateTime":4639,"relativeEntities":4640,"slug":4641,"properties":4642,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"02eb9d9d-e71a-4544-92b6-8cdbdb3ed0e9","2024-04-14T06:39:24.723+00:00","2025-06-11T16:17:42.874+00:00",[],"Electronics-and-Nano-scale-Engineering-Division-University-of-Glasgow-Glasgow-UK",{"title":4643},{"EN":4644},"Electronics and Nano-scale Engineering Division, University of Glasgow, Glasgow, UK",{"openalex":4646,"orcid":4648,"title":4650},{"VOID":4647},"A5040010268",{"VOID":4649},"https:\u002F\u002Forcid.org\u002F0000-0002-4631-7447",{"EN":4651},"Shoubhik Gupta",{"id":4653,"sortIndex":115,"researcher":26,"roles":4654,"affiliations":4655,"properties":4666},"ce93d728-0e21-4428-a487-b48e38ff7177",[],[4656],{"id":26,"sortIndex":36,"affiliation":4657,"properties":26},{"id":4658,"createTime":4659,"updateTime":4660,"relativeEntities":4661,"slug":4662,"properties":4663,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"75751e96-0e92-4ea6-b1d7-95f129ca48ed","2023-12-05T11:27:03.342+00:00","2024-12-12T02:32:17.132+00:00",[],"Department-of-Electrical-Engineering-Indian-Institute-of-Technology-Kanpur-Kanpur-India",{"title":4664},{"VI":4665},"Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India",{"openalex":4667,"title":4669},{"VOID":4668},"A5002039811",{"EN":4670},"Pranav Kumar Asthana",{"id":4672,"sortIndex":36,"researcher":26,"roles":4673,"affiliations":4674,"properties":4680},"30fe38c2-d0e6-43a0-95bb-24311889780c",[],[4675],{"id":26,"sortIndex":36,"affiliation":4676,"properties":26},{"id":4658,"createTime":4659,"updateTime":4660,"relativeEntities":4677,"slug":4662,"properties":4678,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":4679},{"VI":4665},{"openalex":4681,"orcid":4683,"title":4685},{"VOID":4682},"A5032538672",{"VOID":4684},"https:\u002F\u002Forcid.org\u002F0000-0003-3941-8570",{"EN":4686},"Shiromani Balmukund Rahi",{"url":26,"publisher":4688,"properties":26},{"id":659,"createTime":660,"updateTime":661,"relativeEntities":4689,"slug":663,"properties":4690,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":4694,"manageAffiliations":4695,"indexDatabases":4696,"url":26,"thumbnailPath":26,"statistic":4711,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"issn":4691,"eissn":4692,"title":4693},{"VOID":666},{"VOID":668},{"EN":670},[],[],[4697,4704],{"id":727,"indexDatabase":4698,"url":740,"indexYears":741,"academicFieldIds":4703,"indexDatabaseRanking":747},{"id":729,"createTime":730,"updateTime":731,"relativeEntities":4699,"label":4700,"description":4701,"key":737,"publicationTags":4702,"standard":26},[],{"EN":734,"VI":734},{"EN":734,"VI":736},[739],[743,744,745,746],{"id":749,"indexDatabase":4705,"url":764,"indexYears":26,"academicFieldIds":4710,"indexDatabaseRanking":26},{"id":751,"createTime":752,"updateTime":753,"relativeEntities":4706,"label":4707,"description":4708,"key":760,"publicationTags":4709,"standard":26},[],{"EN":756,"VI":756},{"VI":758,"EN":759},[762,763],[766,767],{"impactFactor":36,"impactFactorByYear":4712,"i10Index":780,"i10IndexLast5Year":516,"totalPublication":621,"totalPublicationByYear":4713,"totalCitation":782,"totalCitationByYear":4714,"totalCitationPerPublication":794,"totalCitationPerPublicationByYear":4715,"hindexLast5Year":241,"hindex":241},{"2012":770,"2013":771,"2014":405,"2015":772,"2016":773,"2017":774,"2018":775,"2019":776,"2020":777,"2021":384,"2022":778,"2023":779},{"2004":53,"2005":158,"2006":51,"2007":51,"2009":162,"2010":52,"2011":135,"2012":111,"2013":103,"2014":124,"2015":234,"2016":242,"2017":336,"2018":396,"2019":336,"2020":516,"2021":48,"2022":242,"2023":124,"2024":115},{"2004":253,"2005":285,"2006":784,"2007":367,"2009":285,"2010":785,"2011":786,"2012":787,"2013":788,"2014":789,"2015":365,"2016":790,"2017":790,"2018":41,"2019":791,"2020":792,"2021":793,"2022":259,"2023":298,"2024":115},{"2004":796,"2005":797,"2006":798,"2007":799,"2009":800,"2010":801,"2011":802,"2012":803,"2013":804,"2014":805,"2015":806,"2016":807,"2017":808,"2018":809,"2019":810,"2020":811,"2021":812,"2022":813,"2023":814,"2024":115},{"total":539,"publishYear":26,"statisticByYear":4717},{"2018":115,"2019":116,"2020":116,"2021":52,"2022":50,"2023":158,"2024":115},"2017-03-01",2017,"2024-04-14T18:12:16.743+00:00",[4722,4726,4730,4734,4738,4742,4746,4750,4754,4758,4762,4766,4770,4774,4778,4782,4786,4790,4794,4798,4802,4806,4810,4814,4818,4821,4825,4829,4833,4837,4841],{"id":26,"text":4723,"url":26,"identifiers":4724},"Khatami, Y., Banerjee, K.: Steep subthreshold slope n- and p-type tunnel-FET devices for low-power and energy-efficient digital circuits. IEEE Trans. Electron Devices 56(11), 2752–2761 (2009)",{"doi":4725},"10.1109\u002FTED.2009.2030831",{"id":26,"text":4727,"url":26,"identifiers":4728},"Kim, J.J., Roy, K.: Double gate-MOSFET subthreshold circuit for ultralow power applications. IEEE Trans. Electron Devices 51(9), 1468–1474 (2004)",{"doi":4729},"10.1109\u002FTED.2004.833965",{"id":26,"text":4731,"url":26,"identifiers":4732},"Lu, H., Seabaugh, A.: Tunnel field-effect transistors: state-of-the-art. IEEE J. Electron Devices Soc. 2(4), 44–49 (2014)",{"doi":4733},"10.1109\u002FJEDS.2014.2326622",{"id":26,"text":4735,"url":26,"identifiers":4736},"Huang, Q., Huang, R., Chen, S., Wu, J., Zhan, Z., Qiu, Y., Wang, Y.: Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism. Semicond. Sci. Technol. 29(9), 095013 (2014)",{"doi":4737},"10.1088\u002F0268-1242\u002F29\u002F9\u002F095013",{"id":26,"text":4739,"url":26,"identifiers":4740},"Ionescu, A.M., Riel, H.: Tunnel field-effect transistors as energy-efficient. Nature 479, 329–337 (2011)",{"doi":4741},"10.1038\u002Fnature10679",{"id":26,"text":4743,"url":26,"identifiers":4744},"Knoch, J., Mantl, S., Appenzeller, J.: Impact of the dimensionality on the performance of tunneling FETs: bulk versus one-dimensional devices. Solid-State Electron. 51(4), 572–578 (2007)",{"doi":4745},"10.1016\u002Fj.sse.2007.02.001",{"id":26,"text":4747,"url":26,"identifiers":4748},"Ilatikhameneh, H., Ameen, T.A., Klimeck, G., Appenzeller, J., Rahman, R.: Dielectric engineered tunnel field-effect transistor. IEEE Electron Device Lett. 36(10), 1097–1100 (2015)",{"doi":4749},"10.1109\u002FLED.2015.2474147",{"id":26,"text":4751,"url":26,"identifiers":4752},"Boucart, K., Ionescu, A.M.: A new definition of threshold voltage in tunnel FETs. Solid-State Electron. 52(9), 1318–1323 (2008)",{"doi":4753},"10.1016\u002Fj.sse.2008.04.003",{"id":26,"text":4755,"url":26,"identifiers":4756},"Boucart, K., Ionescu, A.M.: Double gate tunnel FET with ultrathin silicon body and high-k gate dielectric. IEEE Trans. Electron Devices 54(7), 1725–1733 (2007)",{"doi":4757},"10.1109\u002FTED.2007.899389",{"id":26,"text":4759,"url":26,"identifiers":4760},"Choi, W.Y., Park, B.G., Lee, J.D., Liu, T.J.K.: Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV\u002Fdec. IEEE Electron Device Lett. 28(8), 743–745 (2007)",{"doi":4761},"10.1109\u002FLED.2007.901273",{"id":26,"text":4763,"url":26,"identifiers":4764},"Jhaveri, R., Nagavarapu, V., Woo, J.C.: Effect of pocket doping and annealing schemes on the source-pocket tunnel field-effect transistor. IEEE Trans. Electron Devices 58(1), 80–86 (2011)",{"doi":4765},"10.1109\u002FTED.2010.2089525",{"id":26,"text":4767,"url":26,"identifiers":4768},"Venkatagirish, N., Tura, A., Jhaveri, R., Chang, H. Y., Woo, J.: The tunnel source MOSFET: a novel asymmetric device solution for ultra-low power applications. In: 2009 IEEE International Conference on IC Design and Technology (pp. 155–159). IEEE, Piscataway (2009)",{"doi":4769},"10.1109\u002FICICDT.2009.5166285",{"id":26,"text":4771,"url":26,"identifiers":4772},"Zhang, Q., Zhao, W., Seabaugh, A.: Low-subthreshold-swing tunnel transistors. IEEE Electron Device Lett. 27(4), 297–300 (2006)",{"doi":4773},"10.1109\u002FLED.2006.871855",{"id":26,"text":4775,"url":26,"identifiers":4776},"Kanungo, S., Rahaman, H., Gupta, P.S., Dasgupta, P.S.: A detail simulation study on extended source ultra-thin body double-gated tunnel FET. In: 2012 5th International Conference on Computers and Devices for Communication (CODEC, December) (pp. 1–4). IEEE, Piscataway (2012)",{"doi":4777},"10.1109\u002FCODEC.2012.6509242",{"id":26,"text":4779,"url":26,"identifiers":4780},"Wang, X.D., Xiong, Y., Tang, M.H., Peng, L., Xiao, Y.G., Xu, X.Y., He, J.H.: A Si tunnel field-effect transistor model with a high switching current ratio and steep sub-threshold swing. Semicond. Sci. Technol. 29(9), 095016 (2014)",{"doi":4781},"10.1088\u002F0268-1242\u002F29\u002F9\u002F095016",{"id":26,"text":4783,"url":26,"identifiers":4784},"Qiu, Y., Wang, R., Huang, Q., Huang, R.: A comparative study on the impacts of interface traps on tunneling FET and MOSFET. IEEE Trans. Electron Devices 61(5), 1284–1291 (2014)",{"doi":4785},"10.1109\u002FTED.2014.2312330",{"id":26,"text":4787,"url":26,"identifiers":4788},"Lee, C.W., Afzalian, A., Akhavan, N.D., Yan, R., Ferain, I., Colinge, J.P.: Junctionless multigate field-effect transistor. Appl. Phys. Lett. 94(5), 053511 (2009)",{"doi":4789},"10.1063\u002F1.3079411",{"id":26,"text":4791,"url":26,"identifiers":4792},"Lee, C.W., Ferain, I., Afzalian, A., Yan, R., Akhavan, N.D., Razavi, P., Colinge, J.P.: Performance estimation of junctionless multigate transistors. Solid-State Electron. 54(2), 97–103 (2010)",{"doi":4793},"10.1016\u002Fj.sse.2009.12.003",{"id":26,"text":4795,"url":26,"identifiers":4796},"Colinge, J.P., Kranti, A., Yan, R., Lee, C.W., Ferain, I., Yu, R., Razavi, P.: Junctionless nanowire transistor (JNT): properties and design guidelines. Solid-State Electron. 65, 33–37 (2011)",{"doi":4797},"10.1016\u002Fj.sse.2011.06.004",{"id":26,"text":4799,"url":26,"identifiers":4800},"Asthana, P.K., Ghosh, B., Rahi, S.B.M., Goswami, Y.: Optimal design for a high performance H-JLTFET using HfO $$_2$$ 2 as a gate dielectric for ultra low power applications. RSC Adv. 4(43), 22803–22807 (2014)",{"doi":4801},"10.1039\u002Fc4ra00538d",{"id":26,"text":4803,"url":26,"identifiers":4804},"Rahi, S.B., Ghosh, B., Asthana, P.: A simulation-based proposed high-k heterostructure AlGaAs\u002FSi junctionless n-type tunnel FET. J. Semicond. 35(11), 114005 (2014)",{"doi":4805},"10.1088\u002F1674-4926\u002F35\u002F11\u002F114005",{"id":26,"text":4807,"url":26,"identifiers":4808},"Rahi, S.B., Ghosh, B., Bishnoi, B.: Temperature effect on hetero structure junctionless tunnel FET. J. Semicond. 36(3), 034002 (2015)",{"doi":4809},"10.1088\u002F1674-4926\u002F36\u002F3\u002F034002",{"id":26,"text":4811,"url":26,"identifiers":4812},"Rahi, S.B., Ghosh, B.: High-k double gate junctionless tunnel FET with a tunable bandgap. RSC Adv. 5(67), 54544–54550 (2015)",{"doi":4813},"10.1039\u002FC5RA06954H",{"id":26,"text":4815,"url":26,"identifiers":4816},"Villani, F., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.: A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. Solid-State Electron. 113, 86–91 (2015)",{"doi":4817},"10.1016\u002Fj.sse.2015.05.018",{"id":26,"text":4819,"url":26,"identifiers":4820},"Silvaco, Version 5.15.32.R. (2015). http:\u002F\u002Fwww.silvaco.com (2015, Jul.) Atlas User’s Manual. http:\u002F\u002Fwww.silvaco.com",{},{"id":26,"text":4822,"url":26,"identifiers":4823},"Robertson, J.: High dielectric constant oxides. Eur. Phys. J. Appl. Phys. 28(3), 265–291 (2004)",{"doi":4824},"10.1051\u002Fepjap:2004206",{"id":26,"text":4826,"url":26,"identifiers":4827},"Holtij, T., Graef, M., Kloes, A., Iñíguez, B.: Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects. Microelectron. J. 45(9), 1220–1225 (2014)",{"doi":4828},"10.1016\u002Fj.mejo.2014.04.029",{"id":26,"text":4830,"url":26,"identifiers":4831},"Graef, M., Holtij, T., Hain, F., Kloes, A., Iñíguez, B.: A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectron. J. 45(9), 1144–1153 (2014)",{"doi":4832},"10.1016\u002Fj.mejo.2014.04.033",{"id":26,"text":4834,"url":26,"identifiers":4835},"Dutta, T., Kumar, S., Rastogi, P., Agarwal, A., Chauhan, Y.S.: Impact of channel thickness variation on bandstructure and source-to-drain tunneling in ultra-thin body III-V MOSFETs. IEEE J. Electron Devices Soc. 4(2), 66–71 (2016)",{"doi":4836},"10.1109\u002FJEDS.2016.2522981",{"id":26,"text":4838,"url":26,"identifiers":4839},"Yadav, C., Duarte, J.P., Khandelwal, S., Agarwal, A., Hu, C., Chauhan, Y.S.: Capacitance modeling in III-V FinFETs. IEEE Trans. Electron Devices 62(11), 3892–3897 (2015)",{"doi":4840},"10.1109\u002FTED.2015.2480380",{"id":26,"text":4842,"url":26,"identifiers":4843},"Patel, N., Ramesha, A., Mahapatra, S.: Drive current boosting of n-type tunnel FET with strained SiGe layer at source. Microelectron. J. 39(12), 1671–1677 (2008)",{"doi":4844},"10.1016\u002Fj.mejo.2008.02.020"]