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The particle size measured from TEM images was 4.3, 6.1, 7.6, and 10.2 nm for AgNPs\u002FPVP, AgNPs\u002FPVA, AgNPs\u002Falginate, and AgNPs\u002Fsericin, respectively. The influence of different stabilizers on the antibacterial activity of AgNPs was investigated. Results showed that AgNPs\u002Falginate exhibited the highest antibacterial activity against Escherichia coli (E. coli) among the as-synthesized AgNPs. Handwash solution has been prepared using Na lauryl sulfate as surfactant, hydroxyethyl cellulose as binder, and 15 mg\u002FL of AgNPs\u002Falginate as antimicrobial agent. The obtained results on the antibacterial test of handwash for the dilution to 3 mg AgNPs\u002FL showed that the antibacterial efficiency against E. coli was of 74.6%, 89.8%, and 99.0% for the contacted time of 1, 3, and 5 min, respectively. Thus, due to the biocompatibility of alginate extracted from seaweed and highly antimicrobial activity of AgNPs synthesized by gamma Co-60 irradiation, AgNPs\u002Falginate is promising to use as an antimicrobial agent in biomedicine, cosmetic, and in other fields.",{"EN":95,"VI":96},"Study on antibacterial activity of silver nanoparticles synthesized by gamma irradiation method using different stabilizers","Nghiên cứu hoạt tính kháng khuẩn của hạt nano bạc được tổng hợp bằng phương pháp chiếu xạ gamma sử dụng các chất ổn định khác nhau",{"VOID":98},"Kvítek L, Panáček A, Soukupová J, Kolář M, Večeřová R, Prucek R, Holecová M, Zbořil R: Effect of surfactants and polymers on stability and antibacterial activity of silver nanoparticles (NPs). J Phys Chem C 2008, 112: 5825–5834. 10.1021\u002Fjp711616v\nHenglein A, Giersig M: Formation of colloidal silver nanoparticles: capping action of citrate. J Phys Chem B 1999, 103: 9533–9539. 10.1021\u002Fjp9925334\nTemgire MK, Joshi SS: Optical and structural studies of silver nanoparticles. Rad Phys Chem 2004, 71: 1039–1044. 10.1016\u002Fj.radphyschem.2003.10.016\nBogle KA, Dhole SD, Bhoraskar VN: Silver nanoparticles: synthesis and size control by electron irradiation. Nanotechnology 2006, 17: 3204–3208. 10.1088\u002F0957-4484\u002F17\u002F13\u002F021\nPatakfalvi R, Papp S, Dékány I: The kinetics of homogenous nucleation of silver nanoparticles stabilized by polymers. J Nanopart Res 2007, 9: 353–364. 10.1007\u002Fs11051-006-9139-9\nZhang Z, Zhao B, Hu L: PVP protective mechanism of ultrafine silver power synthesized by chemical reduction processes. J Solid State Chem 1996, 121: 105–110. 10.1006\u002Fjssc.1996.0015\nKapoor S: Preparation, characterization, and surface modification of silver particles. Langmuir 1998, 14: 1021–1025. 10.1021\u002Fla9705827\nLi T, Park HG, Choi SH: γ-irradiation-induced preparation of Ag and Au nanoparticles and their characterizations. Mater Chem Phys 2007, 105: 325–330. 10.1016\u002Fj.matchemphys.2007.04.069\nDu BD, Phu DV, Duy NN, Lan NTK, Lang VTK, Thanh NVK, Phong NTP, Hien NQ: Preparation of colloidal silver nanoparticles in poly( N -vinylpyrrolidone) by γ-irradiation. J Exper Nanosci 2008, 3: 207–213. 10.1080\u002F17458080802353527\nSanpui P, Murugadoss A, Prasad PVD, Ghosh SS, Chattopadhyay A: The antibacterial properties of a novel chitosan-Ag-nanoparticle composite. Inter J Food Microbiol 2008, 124: 142–146. 10.1016\u002Fj.ijfoodmicro.2008.03.004\nWei D, Sun W, Qian W, Ye Y, Ma X: The synthesis of chitosan-based silver nanoparticles and their antimicrobial activity. Carbohydr Res 2009, 344: 2375–2382. 10.1016\u002Fj.carres.2009.09.001\nHuang NM, Radiman S, Lim HN, Khiew PS, Chiu WS, Lee KH, Syahida A, Hashim R, Chia CH: γ-ray assisted synthesis of silver nanoparticles in chitosan solution and the antimicrobial properties. Chem Engin J 2009, 155: 499–507. 10.1016\u002Fj.cej.2009.07.040\nPhu DV, Lang VTK, Lan NTK, Duy NN, Chau ND, Du BD, Cam BD, Hien NQ: Synthesis and antimicrobial effects of colloidal silver nanoparticles in chitosan by γ-irradiation. J Exper Nanosci 2010, 5: 169–179. 10.1080\u002F17458080903383324\nPotara M, Jakab E, Damert A, Popescu O, Canpean V, Astilean S: Synergistic antibacterial activity of chitosan-silver nanocomposites on Staphylococcus aureus . Nanotechnology 2011, 22: 135101. 10.1088\u002F0957-4484\u002F22\u002F13\u002F135101\nLiu Y, Chen S, Zhong L, Wu G: Preparation of high-stable silver nanoparticle dispersion by using sodium alginate as a stabilizer under gamma radiation. Rad Phys Chem 2009, 78: 251–255. 10.1016\u002Fj.radphyschem.2009.01.003\nLan NTK, Phu DV, Lang VTK, Duy NN, Hanh TT, Anh NT, Hien NQ: Study on preparation of silver nanoparticles by gamma Co-60 irradiation using alginate as stabilizer. Vietnam J Chem 2010, 48: 298–302. (in Vietnamese with English abstract) (in Vietnamese with English abstract)\nHebeish AA, El-Rafie MH, Abdel-Mohdy FA, Abdel-Halim ES, Emam HE: Carboxymethyl cellulose for green synthesis and stabilization of silver nanoparticles. Carbohydr Polym 2010, 82: 933–941. 10.1016\u002Fj.carbpol.2010.06.020\nAbdel-Halim ES, Al-Deyab SS: Utilization of hydroxypropyl cellulose for green and efficient synthesis of silver nanoparticles. Carbohydr Polym 2011, 82: 1615–1622.\nDarroudi M, Zak AK, Muhamad MR, Huang NM, Hakimi M: Green synthesis of colloidal silver nanoparticles by sonochemical method. Mater Lett 2012, 66: 117–120. 10.1016\u002Fj.matlet.2011.08.016\nEl Badawy AM, Silva RG, Morris B, Scheckel KG, Tolaymat TM: Surface charge-dependent toxicity of silver nanoparticles. Environ Sci Technol 2011, 45: 283–287. 10.1021\u002Fes1034188\nEl Badawy AM, Scheckel KG, Suidan M, Tolaymat T: The impact of stabilization mechanism on the aggregation kinetics of silver nanoparticles. Sci Total Environ 2012, 429: 325–331.\nTiwari DK, Behari J, Sen P: Time and dose-dependent antimicrobial potential of Ag nanoparticles synthesized by top-down approach. Curr Sci 2008, 95: 647–655.\nLi WR, Xie XB, Shi QS, Zeng HY, Ou-Yang YS, Chen YB: Antibacterial activity and mechanism of silver nanoparticles on Escherichia coli . Appl Microbiol Biotechnol 2010, 85: 1115–1122. 10.1007\u002Fs00253-009-2159-5\nZhang H, Smith JA, Oyanedel-Craver V: The effect of natural water condition on the antibacterial performance and stability of silver nanoparticles capped with different polymers. Water Res 2012, 46: 691–699. 10.1016\u002Fj.watres.2011.11.037\nSondi I, Salopek-Sondi B: Silver nanoparticles as antimicrobial agent: a case study on E. coli as a model for Gram-negative bacteria. J Colloid Interf Sci 2004, 275: 177–182. 10.1016\u002Fj.jcis.2004.02.012\nPetica A, Gavriliu S, Lungu M, Buruntea N, Panzaru C: Colloidal silver solutions with antimicrobial properties. Mater Sci Engin B 2008, 152: 22–27. 10.1016\u002Fj.mseb.2008.06.021\nKaegi R, Voegelin A, Sinnet B, Zuleeg S, Hagendorfer H, Burkhardt M, Siegrist H: Behavior of metallic silver nanoparticles in a pilot wastewater treatment plant. Environ Sci Technol 2011, 45: 3902–3908. 10.1021\u002Fes1041892\nRatte HT: Bioaccumulation and toxicity of silver compounds: a review. Environ Toxicol Chem 1999, 18: 89–108. 10.1002\u002Fetc.5620180112",{"VOID":100},"10.1186\u002F1556-276X-9-162","PUBLICATION","VERIFIED","2025-01-25T05:35:37.010+00:00","Auto Verify",[106],"VI","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1186\u002F1556-276X-9-162",[109,125,138,151,164,180,196],{"id":110,"sortIndex":19,"researcher":18,"roles":111,"affiliations":113,"properties":122,"displayName":124,"givenName":18,"familyName":18},"99ab8b57-f444-4d64-81df-76e11c8cb3f5",[112],"AUTHOR",[114],{"id":115,"sortIndex":19,"affiliation":116,"properties":18},"8c986f33-f863-434f-b0e4-7ff2318d3b9e",{"id":115,"createTime":18,"updateTime":18,"relativeEntities":117,"slug":18,"properties":118,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":121,"statistic":18},[],{"title":119},{"VI":120},"Research and Development Center for Radiation Technology, Vietnam Atomic Energy Institute, Thu Duc District, Ho 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investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high\u002Flow resistance states (HRS\u002FLRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp2 carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp3-type carbon filament through hydrogenation process.",{"EN":268,"VI":269},"Hydrogen induced redox mechanism in amorphous carbon resistive random access memory","Cơ chế oxy hóa khử do hydro gây ra trong bộ nhớ truy cập ngẫu nhiên điện trở carbon vô định hình",{"VOID":271},"Guan WH, Long SB, Jia R, Liu M: Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Appl Phys Lett 2007, 91: 062111. 10.1063\u002F1.2760156\nLiu Q, Guan WH, Long SB, Jia R, Liu M, Chen JN: Resistive switching memory effect of ZrO2 films with Zr+ implanted. Appl Phys Lett 2008, 92: 012117. 10.1063\u002F1.2832660\nChang TC, Jian FY, Chen SC, Tsai YT: Developments in nanocrystal memory. Mater Today 2011, 14: 608–615. 10.1016\u002FS1369-7021(11)70302-9\nTsai CT, Chang TC, Chen SC, Lo IK, Tsao SW, Hung MC, Chang JJ, Wu CY, Huang CY: Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor. Appl Phys Lett 2010, 96: 242105. 10.1063\u002F1.3453870\nChen TC, Chang TC, Tsai CT, Hsieh TY, Chen SC, Lin CS, Hung MC, Tu CH, Chang JJ, Chen PL: Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress. Appl Phys Lett 2010, 97: 112104. 10.1063\u002F1.3481676\nLiu J, Wang Q, Long SB, Zhang MH, Liu M: A metal\u002FAl2O3\u002FZrO2\u002FSiO2\u002FSi (MAZOS) structure for high-performance non-volatile memory application. Semicond Sci Technol 2010, 25: 055013. 10.1088\u002F0268-1242\u002F25\u002F5\u002F055013\nJiang DD, Zhang MH, Huo ZL, Wang Q, Liu J, Yu ZA, Yang XN, Wang Y, Zhang B, Chen JN, Liu M: A study of cycling induced degradation mechanisms in Si nanocrystal memory devices. Nanotechnology 2011, 22: 254009. 10.1088\u002F0957-4484\u002F22\u002F25\u002F254009\nSyu YE, Chang TC, Tsai TM, Hung YC, Chang KC, Tsai MJ, Kao MJ, Sze SM: Redox reaction switching mechanism in RRAM device with Pt\u002FCoSiOX\u002FTiN structure. IEEE Electron Device Lett 2011, 32: 545–547.\nChen MC, Chang TC, Tsai CT, Huang SY, Chen SC, Hu CW, Sze SM, Tsai MJ: Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films. Appl Phys Lett 2010, 96: 262110. 10.1063\u002F1.3456379\nZhu CX, Huo ZL, Xu ZG, Zhang MH, Wang Q, Liu J, Long SB, Liu M: Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer. Appl Phys Lett 2010, 97: 253503. 10.1063\u002F1.3531559\nZhu CX, Xu ZG, Huo ZL, Yang R, Zheng ZW, Cui YX, Liu J, Wang YM, Shi DX, Zhang GY, Li FH, Liu M: Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy. Appl Phys Lett 2011, 99: 223504. 10.1063\u002F1.3664222\nTsai TM, Chang KC, Chang TC, Syu YE, Chuang SL, Chang GW, Liu GR, Chen MC, Huang HC, Liu SK, Tai YH, Gan DS, Yang YL, Young TF, Tseng BH, Chen KH, Tsai MJ, Ye C, Wang H, Sze SM: Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications. IEEE Electron Device Lett 2012, 33: 1696–1698.\nFu D, Xie D, Feng TT, Zhang CH, Niu JB, Qian H, Liu LT: Unipolar resistive switching properties of diamondlike carbon-based RRAM devices. IEEE Electron Device Lett 2011, 32: 803–805.\nZhuge F, Dai W, He CL, Wang AY, Liu YW, Li M, Wu YH, Cui P, Li RW: Nonvolatile resistive switching memory based on amorphous carbon. Appl Phys Lett 2010, 96: 163505. 10.1063\u002F1.3406121\nPeng PG, Xie D, Yang Y, Zhou CJ, Ma S, Feng TT, Tian H, Ren TL: Bipolar and unipolar resistive switching effects in an Al\u002FDLC\u002FW structure. J Phys D Appl Phys 2012, 45: 365103. 10.1088\u002F0022-3727\u002F45\u002F36\u002F365103\nRueckes T, Kim K, Joselevich E, Tseng GY, Cheung CL, Lieber CM: Carbon nanotube-based nonvolatile random access memory for molecular computing. Science 2000, 289: 94–97. 10.1126\u002Fscience.289.5476.94\nWang Y, Liu Q, Long SB, Wang W, Wang Q, Zhang MH, Zhang S, Li YT, Zuo QY, Yang JH, Liu M: Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications. Nanotechnology 2010, 21: 045202. 10.1088\u002F0957-4484\u002F21\u002F4\u002F045202\nKuang YB, Huang R, Ding W, Zhang LJ, Wang YG: Flexible single-component-polymer resistive memory for ultrafast and highly compatible nonvolatile memory applications. IEEE Electron Device Lett 2010, 31: 758–760.\nRusso U, Ielmini D, Cagli C, Lacaita AL: Filament conduction and reset mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices. IEEE Trans Electron Devices 2009, 56: 186–192.\nStandley B, Bao WZ, Zhang H, Bruck J, Lau CN, Bockrath M: Graphene-based atomic-scale switches. Nano Lett 2008, 8: 3345–3349. 10.1021\u002Fnl801774a\nLi YT, Long SB, Zhang MH, Liu Q, Zhang S, Wang Y, Zuo QY, Liu S, Liu M: Resistive switching properties of Au\u002FZrO2\u002FAg structure for low-voltage nonvolatile memory applications. IEEE Electron Device Lett 2010, 31: 117–119.\nSebastian A, Pauza A, Rossel C, Shelby RM, Rodríguez AF, Pozidis H, Eleftheriou E: Resistance switching at the nanometre scale in amorphous carbon. New J Phys 2011, 13: 013020. 10.1088\u002F1367-2630\u002F13\u002F1\u002F013020\nChang KC, Tsai TM, Zhang R, Chang TC, Chen KH, Chen JH, Young TF, Lou JC, Chu TJ, Shih CC, Pan JH, Su YT, Syu YE, Tung CW, Chen MC, Wu JJ, Hu Y, Sze SM: Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process. Appl Phys Lett 2013, 103: 083509. 10.1063\u002F1.4819162\nChang KC, Zhang R, Chang TC, Tsai TM, Lou JC, Chen JH, Young TF, Chen MC, Yang YL, Pan YC, Chang GW, Chu TJ, Shih CC, Chen JY, Pan CH, Su YT, Syu YE, Tai YH, Sze SM: Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices. IEEE Electron Device Lett 2013, 34: 677–679.\nZhang R, Chang KC, Chang TC, Tsai TM, Chen KH, Lou JC, Chen JH, Young TF, Shih CC, Yang YL, Pan YC, Chu TJ, Huang SY, Pan CH, Su YT, Syu YE, Sze SM: High performance of graphene oxide-doped silicon oxide-based resistance random access memory. Nanoscale Res Lett 2013, 8: 497. 10.1186\u002F1556-276X-8-497\nTsai TM, Chang KC, Zhang R, Chang TC, Lou JC, Chen JH, Young TF, Tseng BH, Shih CC, Pan YC, Chen MC, Pan JH, Syu YE, Sze SM: Performance and characteristics of double layer porous silicon oxide resistance random access memory. Appl Phys Lett 2013, 102: 253509. 10.1063\u002F1.4812474\nChang KC, Pan CH, Chang TC, Tsai TM, Zhang R, Lou JC, Young TF, Chen JH, Shih CC, Chu TJ, Chen JY, Su YT, Jiang JP, Chen KH, Huang HC, Syu YE, Gan DS, Sze SM: Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment. IEEE Electron Device Lett 2013, 34: 617–619.\nChang KC, Tsai TM, Chang TC, Wu HH, Chen KH, Chen JH, Young TF, Chu TJ, Chen JY, Pan CH, Su YT, Syu YE, Tung CW, Chang GW, Chen MC, Huang HC, Tai YH, Gan DS, Wu JJ, Hu Y, Sze SM: Low temperature improvement method on Zn:SiOx resistive random access memory devices. IEEE Electron Device Lett 2013, 34: 511–513.\nChang KC, Tsai TM, Chang TC, Wu HH, Chen JH, Syu YE, Chang GW, Chu TJ, Liu GR, Su YT, Chen MC, Pan JH, Chen JY, Tung CW, Huang HC, Tai YH, Gan DS, Sze SM: Characteristics and mechanisms of silicon-oxide-based resistance random access memory. IEEE Electron Device Lett 2013, 34: 399–401.\nTsai TM, Chang KC, Chang TC, Chang GW, Syu YE, Su YT, Liu GR, Liao KH, Chen MC, Huang HC, Tai YH, Gan DS, Ye C, Wang H, Sze SM: Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO2 fluid treatment. IEEE Electron Device Lett 2012, 33: 1693–1695.\nTsai TM, Chang KC, Chang TC, Syu YE, Liao KH, Tseng BH, Sze SM: Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment. Appl Phys Lett 2012, 101: 112906. 10.1063\u002F1.4750235\nChang KC, Huang JW, Chang TC, Tsai TM, Chen KH, Young TF, Chen JH, Zhang R, Lou JC, Huang SY, Pan YC, Huang HC, Syu YE, Gan DS, Bao DH, Sze SM: Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. Nanoscale Res Lett 2013, 8: 523. 10.1186\u002F1556-276X-8-523\nChang KC, Tsai TM, Chang TC, Syu YE, Chuang SL, Li CH, Gan DS, Sze SM: The effect of silicon oxide based RRAM with tin doping. Electrochem Solid-State Lett 2012, 15: H65-H68. 10.1149\u002F2.013203esl\nChang KC, Tsai TM, Chang TC, Syu YE, Wang CC, Chuang SL, Li CH, Gan DS, Sze SM: Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment. Appl Phys Lett 2011, 99: 263501. 10.1063\u002F1.3671991\nSyu YE, Chang TC, Tsai TM, Chang GW, Chang KC, Lou JH, Tai YH, Tsai MJ, Wang YL, Sze SM: Asymmetric carrier conduction mechanism by tip electric field in WSiOX resistance switching device. IEEE Electron Device Lett 2012, 33(3):342–344.\nLong SB, Perniola L, Cagli C, Buckley J, Lian XJ, Miranda E, Pan F, Liu M, Sune J: Voltage and power-controlled regimes in the progressive uni-polar RESET transition of HfO2-based RRAM. Sci Rep 2013, 3: 2929.\nSyu YE, Chang TC, Lou JH, Tsai TM, Chang KC, Tsai MJ, Wang YL, Liu M, Sze SM: Atomic-level quantized reaction of HfOx memristor. Appl Phys Lett 2013, 102: 172903. 10.1063\u002F1.4802821\nLong SB, Lian XJ, Cagli C, Perniola L, Miranda E, Liu M, Sune J: A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown. IEEE Electron Device Lett 2013, 34(8):999–1001.\nChu TJ, Chang TC, Tsai TM, Wu HH, Chen JH, Chang KC, Young TF, Chen KH, Syu YE, Chang GW, Chang YF, Chen MC, Lou JH, Pan JH, Chen JY, Tai YH, Ye C, Wang H, Sze SM: Charge quantity influence on resistance switching characteristic during forming process. IEEE Electron Device Lett 2013, 34(4):502–504.\nLong SB, Lian XJ, Cagli C, Cartoixa X, Rurali R, Miranda E, Jimenez D, Perniola L, Liu M, Sune J: Quantum-size effects in hafnium-oxide resistive switching. Appl Phys Lett 2013, 102(18):183505. 10.1063\u002F1.4802265\nSu YT, Chang KC, Chang TC, Tsai TM, Zhang R, Lou JC, Chen JH, Young TF, Chen KH, Tseng BH, Shih CC, Yang YL, Chen MC, Chu TJ, Pan CH, Syu YE, Sze SM: Characteristics of hafnium oxide resistance random access memory with different setting compliance current. Appl Phys Lett 2013, 103(16):163502. 10.1063\u002F1.4825104\nZhang R, Tsai TM, Chang TC, Chang KC, Chen KH, Lou JC, Young TF, Chen JH, Huang SY, Chen MC, Shih CC, Chen HL, Pan JH, Tung CW, Syu YE, Sze SM: Mechanism of power consumption inhibitive multi-layer Zn:SiO2\u002FSiO2 structure resistance random access memory. J. Appl. Phys. 2013, 114: 234501. 10.1063\u002F1.4843695\nChang KC, Chen JH, Tsai TM, Chang TC, Huang SY, Zhang R, Chen KH, Syu YE, Chang GW, Chu TJ, Liu GR, Su YT, Chen MC, Pan JH, Liao KH, Tai YH, Young TF, Sze SM, Ai CF, Wang MC, Huang JW: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment. J. of Supercritical Fluids 2014, 85: 183–189.\nSawa A: Resistive switching in transition metal oxides. Mater Today 2008, 11: 28–36.\nSchwan J, Ulrich S, Batori V, Ehrhardt H, Silva SRP: Raman spectroscopy on amorphous carbon films. J Appl Phys 1996, 80: 440–447. 10.1063\u002F1.362745\nEvtukh A, Litovchenko V, Semenenko M, Yilmazoglu O, Mutamba K, Hartnagel HL, Pavlidis D: Formation of conducting nanochannels in diamond-like carbon films. 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interests have been paid to nanofluids because of the intriguing heat transfer enhancement performances presented by this kind of promising heat transfer media. We produced a series of nanofluids and measured their thermal conductivities. In this article, we discussed the measurements and the enhancements of the thermal conductivity of a variety of nanofluids. The base fluids used included those that are most employed heat transfer fluids, such as deionized water (DW), ethylene glycol (EG), glycerol, silicone oil, and the binary mixture of DW and EG. Various nanoparticles (NPs) involving Al\u003Cjats:sub>2\u003C\u002Fjats:sub>O\u003Cjats:sub>3\u003C\u002Fjats:sub> NPs with different sizes, SiC NPs with different shapes, MgO NPs, ZnO NPs, SiO\u003Cjats:sub>2\u003C\u002Fjats:sub> NPs, Fe\u003Cjats:sub>3\u003C\u002Fjats:sub>O\u003Cjats:sub>4\u003C\u002Fjats:sub> NPs, TiO\u003Cjats:sub>2\u003C\u002Fjats:sub> NPs, diamond NPs, and carbon nanotubes with different pretreatments were used as additives. Our findings demonstrated that the thermal conductivity enhancements of nanofluids could be influenced by multi-faceted factors including the volume fraction of the dispersed NPs, the tested temperature, the thermal conductivity of the base fluid, the size of the dispersed NPs, the pretreatment process, and the additives of the fluids. The thermal transport mechanisms in nanofluids were further discussed, and the promising approaches for optimizing the thermal conductivity of nanofluids have been proposed.\u003C\u002Fjats:p>",{"EN":533,"VI":534},"Discussion on the thermal conductivity enhancement of nanofluids","Thảo luận về sự tăng cường độ dẫn nhiệt của 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Int Commun Heat Mass Trans 2005, 32: 1202–1210. 10.1016\u002Fj.icheatmasstransfer.2005.05.005",{"doi":897},"10.1016\u002Fj.icheatmasstransfer.2005.05.005",{"id":18,"text":899,"url":18,"identifiers":900},"Chen QB, Wei YH, Shi YH, Liu HL, Hu Y: Measurement of surface tension and electrical conductivity of cationic gemini surfactants. J East China Univ Sci Technol 2003, 29: 33–37.",{},{"id":18,"text":902,"url":18,"identifiers":903},"Zana R, Benrraou M, Rueff R: Alkanediyl-α, ω-bis (dimethylalkylammonium bromide) surfactants. 1. effect of the spacer chain length on the critical micelle concertration and micelle ionization degree. Langmuir 1991, 7: 1072–1075. 10.1021\u002Fla00054a008",{"doi":904},"10.1021\u002Fla00054a008",{"id":906,"createTime":907,"updateTime":908,"relativeEntities":909,"slug":910,"properties":911,"entityType":101,"verifyStatus":102,"verifyTime":927,"verifyNote":104,"languages":928,"translateLanguages":929,"viewCount":19,"primaryUrl":930,"fullTextUrl":18,"authors":931,"publicationType":210,"publisherRelationship":998,"citationCount":660,"citationInfo":1036,"publishDate":18,"publishYear":18,"citationAnalyzeStatus":17,"lastCitationAnalyze":18,"indexDatabases":1038,"openAccess":18,"references":1039,"isForceReanalyzing":257},"1c9c43de-a22b-4467-a15e-b22356ed713c","2024-04-16T06:40:46.660+00:00","2026-09-05T01:31:28.798+00:00",[],"Self-assembled-monolayer-of-designed-and-synthesized-triazinedithiolsilane-molecule-as-interfacial-adhesion-enhancer-for-integrated-circuit",{"mag":912,"pmc":914,"openalex":916,"abstract":918,"title":920,"pm":923,"doi":925},{"VOID":913},"2099074704",{"VOID":915},"3211997",{"VOID":917},"W2099074704",{"EN":919},"\u003Cjats:title>Abstract\u003C\u002Fjats:title>\u003Cjats:p>Self-assembled monolayer (SAM) with tunable surface chemistry and smooth surface provides an approach to adhesion improvement and suppressing deleterious chemical interactions. Here, we demonstrate the SAM comprising of designed and synthesized 6-(3-triethoxysilylpropyl)amino-1,3,5-triazine-2,4-dithiol molecule, which can enhance interfacial adhesion to inhibit copper diffusion used in device metallization. The formation of the triazinedithiolsilane SAM is confirmed by X-ray photoelectron spectroscopy. The adhesion strength between SAM-coated substrate and electroless deposition copper film was up to 13.8 MPa. The design strategy of triazinedithiolsilane molecule is expected to open up the possibilities for replacing traditional organosilane to be applied in microelectronic industry.\u003C\u002Fjats:p>",{"EN":921,"VI":922},"Self-assembled monolayer of designed and synthesized triazinedithiolsilane molecule as interfacial adhesion enhancer for integrated circuit","Đơn lớp tự lắp ráp của phân tử triazinedithiolsilane được thiết kế và tổng hợp nhằm tăng cường độ bám dính liên bề mặt cho mạch tích 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TF, Mawst LJ: Nanofabrication of III-V semiconductors employing diblock copolymer lithography. J Phys D: Appl Phys 2010, 43: 183001. 10.1088\u002F0022-3727\u002F43\u002F18\u002F183001",{"doi":1043},"10.1088\u002F0022-3727\u002F43\u002F18\u002F183001",{"id":18,"text":1045,"url":18,"identifiers":1046},"Gandhi D, Lane M, Zhou Y, Singh A, Nayak S, Tisch U, Eizenberg M, Ramanath G: Annealing-induced interfacial toughening using a molecular nanolayer. Nature 2007, 447: 299. 10.1038\u002Fnature05826",{"doi":1047},"10.1038\u002Fnature05826",{"id":18,"text":1049,"url":18,"identifiers":1050},"Doppelt P, Semaltianos N, Deville Cavellin C, Pastol J, Ballutaud D: High affinity self-assembled monolayers for copper CVD. Microelectron Eng 2004, 76: 113. 10.1016\u002Fj.mee.2004.07.023",{"doi":1051},"10.1016\u002Fj.mee.2004.07.023",{"id":18,"text":1053,"url":18,"identifiers":1054},"Caro A, Armini S, Richard O, Maes G, Borghs G, Whelan C, Travaly Y: Bottom-up engineering of subnanometer copper diffusion barriers using NH\n\n2\n\n-derived self-assembled monolayers. Adv Funct Mater 2010, 20: 1125. 10.1002\u002Fadfm.200902072",{"doi":1055},"10.1002\u002Fadfm.200902072",{"id":18,"text":1057,"url":18,"identifiers":1058},"Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N: Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer. Nanoscale Res Lett 2011, 6: 342. 10.1186\u002F1556-276X-6-342",{"doi":1059},"10.1186\u002F1556-276X-6-342",{"id":18,"text":1061,"url":18,"identifiers":1062},"Moores B, Simons J, Xu S, Leonenko Z: AFM-assisted fabrication of thiol SAM pattern with alternating quantified surface potential. Nanoscale Res Lett 2011, 6: 185. 10.1186\u002F1556-276X-6-185",{"doi":1063},"10.1186\u002F1556-276X-6-185",{"id":18,"text":1065,"url":18,"identifiers":1066},"Demirel G, Caglayan MO, Garipcan B, Duman M, Piskin E: Formation and organization of amino terminated self-assembled layers on Si(001) surface. Nanoscale Res Lett 2007, 2: 350. 10.1007\u002Fs11671-007-9071-7",{"doi":1067},"10.1007\u002Fs11671-007-9071-7",{"id":18,"text":1069,"url":18,"identifiers":1070},"Krishnamoorthy A, Chanda K, Murarka S, Ramanath G, Ryan J: Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization. Appl Phys Lett 2001, 78: 2467. 10.1063\u002F1.1365418",{"doi":1071},"10.1063\u002F1.1365418",{"id":18,"text":1073,"url":18,"identifiers":1074},"Gandhi D, Ganesan P, Chandrasekar V, Gan Z, Mhaisalkar S, Li H, Ramanath G: Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces. Appl Phys Lett 2007, 90: 163507. 10.1063\u002F1.2722667",{"doi":1075},"10.1063\u002F1.2722667",{"id":18,"text":1077,"url":18,"identifiers":1078},"Gandhi D, Tisch U, Singh B, Eizenberg M, Ramanath G: Ultraviolet-oxidized mercaptan-terminated organosilane nanolayers as diffusion barriers at Cu-silica interfaces. Appl Phys Lett 2007, 91: 143503. 10.1063\u002F1.2760164",{"doi":1079},"10.1063\u002F1.2760164",{"id":18,"text":1081,"url":18,"identifiers":1082},"Ganesan P, Kumar A, Ramanath G: Surface oxide reduction and bilayer molecular assembly of a thiol-terminated organosilane on Cu. Appl Phys Lett 2005, 87: 011905. 10.1063\u002F1.1968414",{"doi":1083},"10.1063\u002F1.1968414",{"id":18,"text":1085,"url":18,"identifiers":1086},"Garg S, Singh B, Teki R, Lane M, Ramanath G: Hydrophobic fluoroalkylsilane nanolayers for inhibiting copper diffusion into silica. Appl Phys Lett 2010, 96: 143121. 10.1063\u002F1.3374453",{"doi":1087},"10.1063\u002F1.3374453",{"id":18,"text":1089,"url":18,"identifiers":1090},"Hu M, Noda S, Tsuji Y, Okubo T, Yamaguchi Y, Komiyama H: Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates. J Vac Sci Technol A 2002, 20: 589. 10.1116\u002F1.1458941",{"doi":1091},"10.1116\u002F1.1458941",{"id":18,"text":1093,"url":18,"identifiers":1094},"McBrayer J, Swanson R, Sigmon T: Diffusion of metals in silicon dioxide. J Electrochem Soc 1986, 133: 1242. 10.1149\u002F1.2108827",{"doi":1095},"10.1149\u002F1.2108827",{"id":18,"text":1097,"url":18,"identifiers":1098},"Ganesan P, Singh A, Ramanath G: Diffusion barrier properties of carboxyl-and amine-terminated molecular nanolayers. Appl Phys Lett 2004, 85: 579. 10.1063\u002F1.1775035",{"doi":1099},"10.1063\u002F1.1775035",{"id":18,"text":1101,"url":18,"identifiers":1102},"Mikami N, Hata N, Kikkawa T, Machida H: Robust self-assembled monolayer as diffusion barrier for copper metallization. Appl Phys Lett 2003, 83: 5181. 10.1063\u002F1.1635665",{"doi":1103},"10.1063\u002F1.1635665",{"id":18,"text":1105,"url":18,"identifiers":1106},"Rebiscoul D, Perrut V, Morel T, Jayet C, Cubitt R, Haumesser P: Alkoxysilane layers compatible with copper deposition for advanced semiconductor device applications. Langmuir 2010, 26: 8981. 10.1021\u002Fla904771s",{"doi":1107},"10.1021\u002Fla904771s",{"id":18,"text":1109,"url":18,"identifiers":1110},"Wang F, Wang Y, Li Y, Wang Q: Preparation of triazinedithiol polymeric nanofilm by two-step potentiostatic polymerization technique on aluminum surface. Mater Lett 2010, 65: 621.",{"doi":1111},"10.1016\u002Fj.matlet.2010.11.031",{"id":18,"text":1113,"url":18,"identifiers":1114},"Wang F, Mori K, Kang Z, Oishi Y: Magnetic field effects on the polymerization of 6- N, N -dioctylamino-1,3,5-triazine-2,4-dithiol. Heteroat Chem 2007, 18: 60. 10.1002\u002Fhc.20257",{"doi":1115},"10.1002\u002Fhc.20257",{"id":18,"text":1117,"url":18,"identifiers":1118},"Mori K, Suzuki K, Shimizu K, Oishi Y: Evaporation polymerization of 6-dibutylamino-1,3,5-triazine-2,4-dithiol on iron plates. Langmuir 2002, 18: 9527. 10.1021\u002Fla020301h",{"doi":1119},"10.1021\u002Fla020301h",{"id":18,"text":1121,"url":18,"identifiers":1122},"Rezaee A, Pavelka LC, Mittler S: Binary mixtures of SH- and CH3-terminated self-assembled monolayers to control the average spacing between aligned gold nanoparticles. Nanoscale Res Lett 2009, 4: 1319. 10.1007\u002Fs11671-009-9399-2",{"doi":1123},"10.1007\u002Fs11671-009-9399-2",{"id":18,"text":1125,"url":18,"identifiers":1126},"Brandow S, Chen M, Aggarwal R, Dulcey C, Calvert J, Dressick W: Fabrication of patterned amine reactivity templates using 4-chloromethylphenylsiloxane self-assembled monolayer films. Langmuir 1999, 15: 5429. 10.1021\u002Fla9902082",{"doi":1127},"10.1021\u002Fla9902082",{"id":18,"text":1129,"url":18,"identifiers":1130},"Fujiwara Y, Kobayashi Y, Sugaya T, Koishikawa A, Hoshiyama Y, Miyake H: Adsorption promotion of Ag nanoparticle using cationic surfactants and polyelectrolytes for electroless Cu plating catalysts. J Electrochem Soc 2010, 157: D211. 10.1149\u002F1.3306025",{"doi":1131},"10.1149\u002F1.3306025",{"id":1133,"createTime":1134,"updateTime":1135,"relativeEntities":1136,"slug":1137,"properties":1138,"entityType":101,"verifyStatus":102,"verifyTime":1147,"verifyNote":104,"languages":18,"translateLanguages":18,"viewCount":19,"primaryUrl":1148,"fullTextUrl":18,"authors":1149,"publicationType":210,"publisherRelationship":1238,"citationCount":19,"citationInfo":1280,"publishDate":1283,"publishYear":1281,"citationAnalyzeStatus":1284,"lastCitationAnalyze":1135,"indexDatabases":1285,"openAccess":18,"references":1286,"isForceReanalyzing":257},"a93cb69e-ece8-4620-8080-48697688f74d","2024-01-27T20:39:36.610+00:00","2026-08-19T06:40:28.380+00:00",[],"Optical-Properties-of-Silicon-Nanowires-Fabricated-by-Environment-Friendly-Chemistry",{"abstract":1139,"title":1141,"gsPaper":1143,"doi":1145},{"EN":1140},"Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE) where hydrofluoric acid (HF), which is typically used in this method, was changed into ammonium fluoride (NH4F). The structure and optical properties of the obtained SiNWs were investigated in details. The length of the SiNW arrays is about 2 μm for 5 min of etching, and the mean diameter of the SiNWs is between 50 and 200 nm. The formed SiNWs demonstrate a strong decrease of the total reflectance near 5–15 % in the spectral region λ \u003C 1 μm in comparison to crystalline silicon (c-Si) substrate. The interband photoluminescence (PL) and Raman scattering intensities increase strongly for SiNWs in comparison with the corresponding values of the c-Si substrate. These effects can be interpreted as an increase of the excitation intensity of SiNWs due to the strong light scattering and the partial light localization in an inhomogeneous optical medium. Along with the interband PL was also detected the PL of SiNWs in the spectral region of 500–1100 nm with a maximum at 750 nm, which can be explained by the radiative recombination of excitons in small Si nanocrystals at nanowire sidewalls in terms of a quantum confinement model. So SiNWs, which are fabricated by environment-friendly chemistry, have a great potential for use in photovoltaic and photonics applications.",{"EN":1142},"Optical Properties of Silicon Nanowires Fabricated by Environment-Friendly Chemistry",{"VOID":1144},"[\"11037845672186303003\"]",{"VOID":1146},"10.1186\u002Fs11671-016-1568-5","2024-05-04T03:33:22.572+00:00","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1186\u002Fs11671-016-1568-5",[1150,1175,1188,1203,1225],{"id":1151,"sortIndex":19,"researcher":18,"roles":1152,"affiliations":1153,"properties":1170,"displayName":1172,"givenName":18,"familyName":18},"93ab768c-ca67-4903-9a06-e5ffa4724224",[112],[1154,1162],{"id":1155,"sortIndex":19,"affiliation":1156,"properties":18},"887542cf-4395-4323-9075-780ff9adce15",{"id":1155,"createTime":18,"updateTime":18,"relativeEntities":1157,"slug":18,"properties":1158,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1161,"statistic":18},[],{"title":1159},{"VI":1160},"Physics Department, Lomonosov Moscow State University, Moscow, Russia",[],{"id":1163,"sortIndex":74,"affiliation":1164,"properties":18},"0af6366e-2000-45d6-b31e-aaec64290ab1",{"id":1163,"createTime":18,"updateTime":18,"relativeEntities":1165,"slug":18,"properties":1166,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":1169,"statistic":18},[],{"title":1167},{"VI":1168},"Ural Federal University, Yekaterinburg, Russia",[],{"title":1171,"gsAuthor":1173},{"VI":1172},"Kirill A. 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Sensors 14:245–271",{"doi":1298},{"id":18,"text":1318,"url":18,"identifiers":1319},"Wagner RS, Ellis WC (1964) Vapor–liquid–solid mechanism of single crystal growth. Appl Phys Lett 4:89–90",{},{"id":1321,"text":1322,"url":1323,"identifiers":1324},"57610cf8-cd3c-4488-8f3c-468cf9db2fd9","Li X, Bohn PW (2000) Metal-assisted chemical etching in HF\u002FH2O2 produces porous silicon. Appl Phys Lett 77(16):2572–2574","https:\u002F\u002Fpubs.aip.org\u002Fapl\u002Farticle\u002F77\u002F16\u002F2572\u002F517528\u002FMetal-assisted-chemical-etching-in-HF-H2O2",{"doi":1325},"10.1063\u002F1.1319191",{"id":1294,"text":1327,"url":1296,"identifiers":1328},"Chattopadhyay S, Li X, Bohn PW (2002) In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching. J Appl Phys 91(9):6134–6140",{"doi":1298},{"id":1294,"text":1330,"url":1296,"identifiers":1331},"Dawood MK, Tripathy S, Dolmanan SB, Ng TH, Tan H, Lam J (2012) Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching. J Appl Phys 112:073509",{"doi":1298},{"id":1294,"text":1333,"url":1296,"identifiers":1334},"Sivakov VA, Bronstrup G, Pecz B, Berger A, Radnoczi GZ, Krause M, Christiansen SH (2010) Realization of vertical and zigzag single crystalline silicon nanowire architectures. J Phys Chem C 114:3798–3803",{"doi":1298},{"id":1294,"text":1336,"url":1296,"identifiers":1337},"Bai F, Li M, Huang R, Song D, Jiang B, Li Y (2012) Template-free fabrication of silicon micropillar\u002Fnanowire composite structure by one-step etching. Nanosc Res Lett 7:557",{"doi":1298},{"id":1294,"text":1339,"url":1296,"identifiers":1340},"Nahidi M, Kolasinski KW (2006) Effects of stain etchant composition on the photoluminescence and morphology of porous silicon. J Electrochem Soc 153:C19–C26",{"doi":1298},{"id":1294,"text":1342,"url":1296,"identifiers":1343},"Sivakov VA, Voigt F, Berger A, Bauer G, Christiansen SH (2010) Roughness of silicon nanowire sidewalls and room temperature photoluminescence. Phys Ref B 82(12):125446",{"doi":1298},{"id":1345,"text":1346,"url":1347,"identifiers":1348},"77c7d408-9336-409c-bd9b-91abacd08c89","Osminkina LA, Gonchar KA, Marshov VS, Bunkov KV, Petrov DV, Golovan LA, Sivakov VA, Timoshenko VY (2012) Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect. Nanosc Res Lett 7:524","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1186\u002F1556-276X-7-524",{"doi":1349},"10.1186\u002F1556-276X-7-524",{"id":1294,"text":1351,"url":1296,"identifiers":1352},"Gonchar KA, Osminkina LA, Galkin RA, Gongalsky MB, Marshov VS, Timoshenko VY, Kulmas MN, Solovyev VV, Kudryavtsev AA, Sivakov VA (2012) Growth, structure and optical properties of silicon nanowires formed by metal-assisted chemical etching. J Nanoelectr Optoelectr 7(6):602–606",{"doi":1298},{"id":1294,"text":1354,"url":1296,"identifiers":1355},"Gonchar KA, Golovan LA, Timoshenko VY, Sivakov VA, Christiansen S (2010) Effects of light localization in photoluminescence and Raman scattering in silicon nanostructures. Bull Russ Acad Sci Phys 74(12):1712–1714",{"doi":1298},{"id":1294,"text":1357,"url":1296,"identifiers":1358},"Timoshenko VY, Gonchar KA, Golovan LA, Efimova AI, Sivakov VA, Dellith A, Christiansen SH (2011) Photoluminescence and Raman scattering in arrays of silicon nanowires. J Nanoelectr Optoelectr 6(4):519–524",{"doi":1298},{"id":1360,"text":1361,"url":1362,"identifiers":1363},"60f9b9f8-c892-4fff-8b56-2bdee301572b","Gonchar KA, Osminkina LA, Sivakov V, Lysenko V, Timoshenko VY (2014) Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers. Semiconductors 48(12):1613–1618","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1134\u002FS1063782614120082",{"doi":1364},"10.1134\u002FS1063782614120082",{"id":1294,"text":1366,"url":1296,"identifiers":1367},"Golovan LA, Gonchar KA, Osminkina LA, Timoshenko VY, Petrov GI, Yakovlev VV (2012) Coherent anti-Stokes Raman scattering in silicon nanowire ensembles. Laser Phys Lett 9:145–150",{"doi":1298},{"id":1294,"text":1369,"url":1296,"identifiers":1370},"Zabotnov SV, Kholodov MM, Georgobiani VA, Presnov DE, Golovan LA, Kashkarov PK (2016) Photon lifetime correlated increase of Raman scattering and third-harmonic generation in silicon nanowire arrays. Laser Phys Lett 13:035902",{"doi":1298},{"id":1372,"text":1373,"url":1374,"identifiers":1375},"b6490ae4-efec-4c07-8993-c8bd45aa4d4b","Georgobiani VA, Gonchar KA, Osminkina LA, Timoshenko VY (2015) Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level. Semiconductors 49(8):1025–1029","http:\u002F\u002Flink.springer.com\u002F10.1134\u002FS1063782615080084",{"doi":1376},"10.1134\u002Fs1063782615080084",{"id":1294,"text":1378,"url":1296,"identifiers":1379},"Bertolini JC (1992) Hydrofluoric acid: a review of toxicity. J Emerg Med 10(2):163–168",{"doi":1298},{"id":1294,"text":1381,"url":1296,"identifiers":1382},"Judge JS (1971) A study of the dissolution of SiO2 in acidic fluoride solutions. J Electrochem Soc 118(11):1772–1775",{"doi":1298},{"id":1294,"text":1384,"url":1296,"identifiers":1385},"Dittrich T, Rauscher S, Timoshenko VY, Rappich J, Sieber I, Flietner H, Lewerenz HJ (1995) Ultrathin luminescent nanoporous silicon on n-Si: pH dependent preparation in aqueous NH4F solutions. Appl Phys Lett 67(8):1134–1136",{"doi":1298},{"id":1294,"text":1387,"url":1296,"identifiers":1388},"Kuhl M, O’Halloran GM, Gennissen PTJ, French PJ (1998) Formation of porous silicon using an ammonium fluoride based electrolyte for application as a sacrificial layer. J Micromech Microeng 8(4):317–322",{"doi":1298},{"id":1294,"text":1390,"url":1296,"identifiers":1391},"Ohji H, French PJ (1999) Single step electrochemical etching in ammonium fluoride. 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J Phys Chem C 112(12):4444–4450",{"doi":1298},{"id":1294,"text":1411,"url":1296,"identifiers":1412},"Ledoux G, Guillois O, Porterat D, Reynaud C, Huisken F, Kohn B, Paillard V (2000) Photoluminescence properties of silicon nanocrystals as a function of their size. Phys Rev B 62(23):15942",{"doi":1298},{"id":1414,"createTime":1415,"updateTime":1416,"relativeEntities":1417,"slug":1418,"properties":1419,"entityType":101,"verifyStatus":102,"verifyTime":1430,"verifyNote":104,"languages":18,"translateLanguages":18,"viewCount":19,"primaryUrl":1431,"fullTextUrl":18,"authors":1432,"publicationType":210,"publisherRelationship":1500,"citationCount":1543,"citationInfo":1544,"publishDate":1556,"publishYear":1545,"citationAnalyzeStatus":1284,"lastCitationAnalyze":1557,"indexDatabases":1558,"openAccess":18,"references":18,"isForceReanalyzing":257},"85ab833f-35cd-4689-8104-279078302dfa","2023-12-07T05:29:18.549+00:00","2026-08-17T22:20:01.529+00:00",[],"Band-Gap-Narrowing-and-Widening-of-ZnO-Nanostructures-and-Doped-Materials",{"abstract":1420,"title":1422,"gsPaper":1424,"references":1426,"doi":1428},{"EN":1421},"Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemistry method, and X-ray diffraction (XRD) results showed that all samples were pure and single phase. UV-visible spectroscopy showed that materials in the nanostructured state exhibit band gap widening with respect to their micron state while for the doped compounds exhibited band gap narrowing both in the nano and micron states with respect to the pure ZnO materials. The degree of band gap change was dependent on the doped elements and crystallite size. X-ray photoelectron spectroscopy (XPS) revealed that there were shifts in the valence bands. From both UV-visible and XPS spectroscopy, it was found that the mechanism for band gap narrowing was due to the shifting of the valance band maximum and conduction band minimum of the materials. The mechanisms were different for different samples depending on the type of dopant and dimensional length scales of the crystallites.",{"EN":1423},"Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials",{"VOID":1425},"[\"17111527543754361600\"]",{"VOID":1427},"Willander M, Zhao QX, Hu QH, Klason P, Kuzmin V, Al-Hilli SM, et al. Fundamentals and properties of zinc oxide nanostructures: optical and sensing applications. Supperlattice Microst. 2008;43:352–61.\nCaglar M, Ilican S, Caglar Y, Yakuphonoglu F. Electrical and optical properties of ZnO nanostructured thin film. Mater Chem Phys. 2009;114:194–8.\nSahoo T, Tripathy SK, Yu YT, Ahn HK, Shin DC, Lee IH. Morphology and crystal quality investigation of hydrothermally synthesized ZnO micro rods. Mater Res Bull. 2008;43:2060–8.\nMazloumi M, Taghavi S, Arami H, Zanganeh S, Kajbafla A, Shayegh MR, et al. Self assembly of ZnO nanoparticles and subsequent formation of hollow microspheres. J Alloys and Comp. 2009;468:303–7.\nLi F, Bi W, Liu L, Li Z, Huang X. Preparation and characterization of ZnO nanospindles and ZnO @ ZnS core-shell microspindles. Colloids and Surfaces A: Physiocochem Eng Aspects. 2009;334:160–4.\nTong Y, Cheng J, Liu Y, Siu GG. Enhanced photocatalytic performance of ZnO hierarchical nanostructures synthesized via a two-temperature aqueous solution route. Scripta Mat. 2009;60:1093–6.\nHong RY, Li JH, Chen LL, Liu DQ, Li HZ, Zheng Y, et al. Synthesis, surface modification and photocatalytic property of ZnO nanoparticles. Powder Technol. 2009;189:426–32.\nZhang H, Chen B, Jiang H, Wang C, Wang H, Wang X. A strategy for ZnO nanorod mediated multi-mode cancer treatment. Biomaterials. 2011;32:1906–14.\nRusdi R, Rahman AA, Mohamed NS, Kamarudin N, Kamarulzaman N. Preparation and band gap energies of ZnO nanotubes, nanorods and spherical nanostructures. Powder Technol. 2011;210:18–22.\nCaglar M, Caglar Y, Aksoy S, Ilican S. Temperature dependence of d optical band gap and electrical conductivity of sol–gel derived undoped and Li-doped ZnO films. Appl Surf Sci. 2010;256:4966–71.\nShan FK, Liu GX, Lee WJ, Shin BC. Stokes shift, blue shift and red shift of ZnO-based thin films deposited by pulsed-laser deposition. J Cryst Growth. 2006;291:328–33.\nShan FK, Yu YS. Band gap energy of pure and Al-doped ZnO thin films. J Eur Ceram Soc. 2004;24:1869–72.\nSalleh R, Prakoso SP, Fishli A. The influence of Fe doping on the structural, magnetic and optical properties of nanocrystalline ZnO particles. J Magn Magn Mater. 2012;324:665–70.\nChen Y, Xu XL, Zhang GH, Xue H, Ma SY. Blue shift of optical band gap in Er-doped ZnO thin films deposited by direct current reactive magnetron sputtering technique. Physica E. 2010;42:1713–6.\nLiu H, Yang J, Hua Z, Zhang Y, Yang L, Xiao L, et al. The structure and magnetic properties of Cu-doped ZnO prepared by sol–gel method. Appl Surf Sci. 2010;256:4162–5.\nAnsari SA, Khan MM, Kalathil S, Nisar A, Lee J, Cho MH. Oxygen vacancy induced band gap narrowing of ZnO nanostructures by an electrochemically active biofilm. Nanoscale. 2013;5:9238–46.\nWang J, Wang Z, Huang B, Ma Y, Liu Y, Qin X, et al. Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO. ACS Appl Mater Interfaces. 2012;4:4024–30.\nBitenc M, Orel ZC. Synthesis and characterization of crystalline hexagonal bipods of zinc oxide. Mater Res Bull. 2009;44:381.\nCao Z, Zhang Z, Wang F, Wang G. Synthesis and UV shielding properties of zinc oxide ultra fine particles modified with silica and trimethyl soloxane. Colloids Surface A. 2009;340:161.\nLee YC, Hu SY, Water W, Toing KK, Feng ZC, Chen YT, et al. Rapid thermal annealing effects on the structural, and optical properties of ZnO films deposited on Si substrates. J Luminescence. 2009;129:148–52.\nHenseler MJH, Lee WCT, Miller P, Durbin SM, Reevers RJ. Optical and photoelectrical properties of ZnO thin films and the effect of annealing. J Cryst Growth. 2006;287:48.\nDavid WIF, Shankland K, McCusker LB, Baerlocher C. Structure determination from powder diffraction data. ᅟ: Oxford University Press; 2002.\nZenkins R, Snyder RL. Introduction to X-ray powder diffractometry. New York: John Wiley and Sons Inc; 1996.\nPecharsky VK, Zavalij PY. Fundamentals of powder diffraction and structural characterization of materials. ᅟ: Springer; 2005.\nJohan MR, Suan MSM, Hawari NL, Ching HA. Annealing effects on the properties of copper oxide thin films prepared by chemical deposition. 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Phys Rev Lett 111:247401",{"doi":1744},"10.1103\u002FPhysRevLett.111.247401",{"id":18,"text":1746,"url":18,"identifiers":1747},"Bludov Yuliy V, Smirnova Daria A, Kivshar Yuri S, Peres NMR, Vasilevskiy MI (2014) Nonlinear TE-polarized surface polaritons on graphene. Phys Rev B 89:035406",{"doi":1748},"10.1103\u002FPhysRevB.89.035406",{"id":18,"text":1750,"url":18,"identifiers":1751},"Hajian H, Soltani-Vala A, Kalafi M, Leung PT (2014) Surface plasmons of a graphene parallel plate waveguide bounded by Kerr-type nonlinear media. J Appl Phys 115:083104",{"doi":1752},"10.1063\u002F1.4865435",{"id":18,"text":1754,"url":18,"identifiers":1755},"Hajian H, Rukhlenko ID, Leung PT, Caglayan H, Ozbay E (2016) Guided plasmon modes of a graphene-coated Kerr slab. Plasmonics 11:735",{"doi":1756},"10.1007\u002Fs11468-015-0104-2",{"id":18,"text":1758,"url":18,"identifiers":1759},"Gorbach AV (2013) Nonlinear graphene plasmonics: amplitude equation for surface plasmons. Phys Rev A 87:013830",{"doi":1760},"10.1103\u002FPhysRevA.87.013830",{"id":18,"text":1762,"url":18,"identifiers":1763},"Smirnova Daria A, Gorbach Andrey V, Iorsh Ivan V, Shadrivov Ilya V, Kivshar YS (2013) Nonlinear switching with a graphene coupler. Phys Rev B 88:045443",{"doi":1764},"10.1103\u002FPhysRevB.88.045443",{"id":18,"text":1766,"url":18,"identifiers":1767},"Nesterov ML, Bravo-Abad J, Nikitin AY, García-Vidal FJ, Martin-Moreno L (2013) Graphene supports the propagation of subwavelength optical solitons. Laser Photonics Rev 7:L7",{"doi":1768},"10.1002\u002Flpor.201200079",{"id":18,"text":1770,"url":18,"identifiers":1771},"Smirnova DA, Shadrivov IV, Smirnov AI, Kivshar YS (2014) Dissipative plasmon-solitons in multilayer graphene. Laser Photonics Rev 8:291",{"doi":1772},"10.1002\u002Flpor.201300173",{"id":18,"text":1774,"url":18,"identifiers":1775},"Bludov Yu V, Smirnova DA, Kivshar Yu S, Peres NMR, Vasilevskiy MI (2015) Discrete solitons in graphene metamaterials. Phys Rev B 91:045424",{"doi":1776},"10.1103\u002FPhysRevB.91.045424",{"id":18,"text":1778,"url":18,"identifiers":1779},"Deng H, Ye F, Malomed BA, Chen X, Panoiu NC (2015) Optically and electrically tunable Dirac points and Zitterbewegung in graphene-based photonic superlattices. Phys Rev B 91:201402(R)",{"doi":1780},"10.1103\u002FPhysRevB.91.201402",{"id":18,"text":1782,"url":18,"identifiers":1783},"Deng H, Chen X, Malomed BA, Panoiu NC (2016) Tunability and robustness of Dirac points of photonic nanostructures. IEEE Journal of Selected Topics in Quantum Electronics 22:5000509",{"doi":1784},"10.1109\u002FJSTQE.2016.2521711",{"id":18,"text":1786,"url":18,"identifiers":1787},"Janson S. Roots of polynomials of degrees 3 and 4, available at \nhttps:\u002F\u002Farxiv.org\u002Fabs\u002F1009.2373\n\n. Accessed 13 Sept 2010",{},{"id":18,"text":1789,"url":18,"identifiers":1790},"Olver FWI, Lozier DW, Boisvert RF, Clark CW. NIST Handbook of Mathematical Functions. New York: Cambridge Univ. Press; 2010.",{},{"id":18,"text":1792,"url":18,"identifiers":1793},"Gusynin V, Sharapov S, Carbotte J (2007) Magneto-optical conductivity in graphene. J Phys Condens Matter 19:026222",{"doi":1794},"10.1088\u002F0953-8984\u002F19\u002F2\u002F026222",{"id":18,"text":1796,"url":18,"identifiers":1797},"Jablan M, Buljan H, Soljačić M (2009) Plasmonics in graphene at infrared frequencies. Phys Rev B 80:245435",{"doi":1798},"10.1103\u002FPhysRevB.80.245435",{"id":18,"text":1800,"url":18,"identifiers":1801},"Rukhlenko ID, Pannipitiya A, Premaratne M (2011) Exact dispersion relation for nonlinear plasmonic waveguides. Phys Rev B 84:113409",{"doi":1802},"10.1103\u002FPhysRevB.84.113409",{"id":18,"text":1804,"url":18,"identifiers":1805},"Hwang EH, Sarma SD (2007) Dielectric function, screening, and plasmons in two-dimensional graphene. 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The phase transition process and pyro- and piezoelectric effects of stretched films and nanofiber meshes were characterized by monitoring the polarized light microscopy (PLM) images, outputting currents and open-circuit voltages respectively, which were proved to be closely related to stretching ratio (λ) and concentrations. This study could expand a new route for the easy fabrication and wide application of PVDF films or fibers in wearable electronics, sensors, and energy harvesting devices.",{"EN":1817},"Studies on the electrostatic effects of stretched PVDF films and nanofibers",{"VOID":1819},"[\"12857160123628999098\"]",{"VOID":1821},"Liu G, Nie J, Han C, Jiang T, Yang Z, Pang Y, Xu L, Guo T, Bu T, Zhang C, Wang ZL (2018) Self-powered electrostatic adsorption face mask based on a triboelectric nanogenerator. ACS Appl Mater Interfaces 10(8):7126–7133\nGu GQ, Han CB, Lu CX, He C, Jiang T, Gao ZL, Li CJ, Wang ZL (2017) Triboelectric nanogenerator enhanced nanofiber air filters for efficient particulate matter removal. ACS Nano 11(6):6211–6217\nXu M, Kang H, Guan L, Li H, Zhang M (2017) Facile fabrication of a flexible linbo3 piezoelectric sensor through hot pressing for biomechanical monitoring. ACS Appl Mater Interfaces 9(40):34687–34695\nRoy K, Ghosh SK, Sultana A, Garain S, Xie M, Bowen CR, Henkel K, Schmeiβer D, Mandal D (2019) A self-powered wearable pressure sensor and pyroelectric breathing sensor based on go interfaced pvdf nanofibers. ACS Appl Nano Mater 2(4):2013–2025\nKaran SK, Mandal D, Khatua BB (2015) Self-powered flexible fe-doped rgo\u002Fpvdf nanocomposite: An excellent material for a piezoelectric energy harvester. Nanoscale 7(24):10655–10666\nErturk A, Inman DJ (2011) Broadband piezoelectric power generation on high-energy orbits of the bistable duffing oscillator with electromechanical coupling. J Sound Vib 330(10):2339–2353\nKawai H (1969) The piezoelectricity of poly (vinylidene fluoride). Jpn J Appl Phys 8(7):975\nRay S, Easteal AJ, Cooney RP, Edmonds NR (2009) Structure and properties of melt-processed pvdf\u002Fpmma\u002Fpolyaniline blends. Mater Chem Phys 113(2–3):829–838\nAtchariyawut S, Feng C, Wang R, Jiraratananon R, Liang DT (2006) Effect of membrane structure on mass-transfer in the membrane gas–liquid contacting process using microporous pvdf hollow fibers. J Membr Sci 285(1–2):272–281\nWang S, Zhao X, Yin X, Yu J, Ding B (2016) Electret polyvinylidene fluoride nanofibers hybridized by polytetrafluoroethylene nanoparticles for high-efficiency air filtration. ACS Appl Mater Interfaces 8(36):23985–23994\nLu K-J, Zuo J, Chung T-S (2017) Novel pvdf membranes comprising n-butylamine functionalized graphene oxide for direct contact membrane distillation. J Membr Sci 539:34–42\nLiu Q, Wang XX, Song WZ, Qiu HJ, Zhang J, Fan Z, Yu M, Long YZ (2020) Wireless single-electrode self-powered piezoelectric sensor for monitoring. ACS Appl Mater Interfaces 12(7):8288–8295\nRoopaa TS, Narasimha Murthy HN, Praveen Kumar VV, Krishna M (2018) Development and characterization of pvdf thin films for pressure sensors. Mater Today: Proc 5(10):21082–21090\nDu C-h, Zhu B-K, Xu Y-Y (2007) Effects of stretching on crystalline phase structure and morphology of hard elastic pvdf fibers. J Appl Polym Sci 104(4):2254–2259\nXing J, Zhang G, Jia X, Liu D, Wyman I (2021) Preparation of multipurpose polyvinylidene fluoride membranes via a spray-coating strategy using waterborne polymers. ACS Appl Mater Interfaces 13(3):4485–4498\nZhang W, Lu Y, Liu J, Li X, Li B, Wang S (2020) Preparation of re-entrant and anti-fouling pvdf composite membrane with omniphobicity for membrane distillation. J Membr Sci 595:117563\nGu Y, Zhang B, Fu Z, Li J, Yu M, Li L, Li J (2021) Poly (vinyl alcohol) modification of poly(vinylidene fluoride) microfiltration membranes for oil\u002Fwater emulsion separation via an unconventional radiation method. J Membr Sci 619:118792\nZhu MM, Fang Y, Chen YC, Lei YQ, Fang LF, Zhu BK, Matsuyama H (2021) Antifouling and antibacterial behavior of membranes containing quaternary ammonium and zwitterionic polymers. J Colloid Interface Sci 584:225–235\nYang M, Hadi P, Yin X, Yu J, Huang X, Ma H, Walker H, Hsiao BS (2021) Antifouling nanocellulose membranes: How subtle adjustment of surface charge lead to self-cleaning property. J Membr Sci 618:118739\nZhao X, Liu C (2019) Efficient preparation of a novel pvdf antifouling membrane based on the solvent-responsive cleaning properties. Sep Purif Technol 210:100–106\nSomeya T, Sekitani T, Iba S, Kato Y, Kawaguchi H, Sakurai T (2004) A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications. Proc Natl Acad Sci 101(27):9966–9970\nBeringer LT, Xu X, Shih W, Shih W-H, Habas R, Schauer CL (2015) An electrospun pvdf-trfe fiber sensor platform for biological applications. Sens Actuators, A 222:293–300\nChen X, Li X, Shao J, An N, Tian H, Wang C, Han T, Wang L, Lu B (2017) High-performance piezoelectric nanogenerators with imprinted p(vdf-trfe)\u002Fbatio3 nanocomposite micropillars for self-powered flexible sensors. Small 13(23):1604245\nJesse S, Baddorf AP, Kalinin SV (2006) Switching spectroscopy piezoresponse force microscopy of ferroelectric materials. Appl Phys Lett 88(6):062908\nHumphrey J, Amin-Sanayei R (2002) Vinylidene fluoride polymers. Encycl Polym Sci Technol 4:510–533\nLovinger AJ (1982) Annealing of poly (vinylidene fluoride) and formation of a fifth phase. Macromolecules 15(1):40–44\nLovinger AJ (1980) Crystallization and morphology of melt-solidified poly (vinylidene fluoride). J Polym Sci Polym Phys Ed 18(4):793–809\nChelakara Satyanarayana K, Bolton K (2012) Molecular dynamics simulations of α- to β-poly(vinylidene fluoride) phase change by stretching and poling. Polymer 53(14):2927–2934\nLovinger AJ (1983) Ferroelectric polymers. Science 220(4602):1115–1121\nErdtman E, Satyanarayana KC, Bolton K (2012) Simulation of α- and β-pvdf melting mechanisms. Polymer 53(14):2919–2926\nGomes J, Serrado Nunes J, Sencadas V, Lanceros-Mendez S (2010) Influence of the β-phase content and degree of crystallinity on the piezo- and ferroelectric properties of poly(vinylidene fluoride). Smart Mater Struct 19(6):065010\nSalimi A, Yousefi AA (2003) Analysis method. Polym Test 22(6):699–704\nJungnickel B (1999) Poly (vinylidene fluoride) (overview). In: Salamone JC (ed) Polymeric material handbook. CRC Press, New York, p 7115\nRibeiro C, Sencadas V, Ribelles JLG, Lanceros-Méndez S (2010) Influence of processing conditions on polymorphism and nanofiber morphology of electroactive poly(vinylidene fluoride) electrospun membranes. Soft Mater 8(3):274–287\nYang D, Chen Y (1987) Β-phase formation of poly (vinylidene fluoride) from the melt induced by quenching. J Mater Sci Lett 6(5):599–603\nYe H-J, Shao W-Z, Zhen L (2013) Crystallization kinetics and phase transformation of poly(vinylidene fluoride) films incorporated with functionalized batio3nanoparticles. J Appl Polym Sci 129(5):2940–2949\nKuilla T, Bhadra S, Yao D, Kim NH, Bose S, Lee JH (2010) Recent advances in graphene based polymer composites. Prog Polym Sci 35(11):1350–1375\nLi X, Lim Y-F, Yao K, Tay FEH, Seah KH (2013) Ferroelectric poly(vinylidene fluoride) homopolymer nanotubes derived from solution in anodic alumina membrane template. Chem Mater 25(4):524–529\nGregorio R, Ueno E (1999) Effect of crystalline phase, orientation and temperature on the dielectric properties of poly (vinylidene fluoride)(pvdf). J Mater Sci 34(18):4489–4500\nMartins P, Lopes AC, Lanceros-Mendez S (2014) Electroactive phases of poly(vinylidene fluoride): Determination, processing and applications. Prog Polym Sci 39(4):683–706\nLi L, Zhang M, Rong M, Ruan W (2014) Studies on the transformation process of pvdf from α to β phase by stretching. RSC Adv 4(8):3938–3943\nArai S, Inoue S, Hamai T, Kumai R, Hasegawa T (2018) Semiconductive single molecular bilayers realized using geometrical frustration. Adv Mater 30(23):e1707256\nMao N, Tang J, Xie L, Wu J, Han B, Lin J, Deng S, Ji W, Xu H, Liu K, Tong L, Zhang J (2016) Optical anisotropy of black phosphorus in the visible regime. J Am Chem Soc 138(1):300–305\nMinemawari H, Yamada T, Matsui H, Tsutsumi J, Haas S, Chiba R, Kumai R, Hasegawa T (2011) Inkjet printing of single-crystal films. Nature 475(7356):364–367\nGregorio R (2006) Determination of the α, β, and γ crystalline phases of poly(vinylidene fluoride) films prepared at different conditions. J Appl Polym Sci 100(4):3272–3279\nBroadhurst MG, Davis GT, McKinney JE, Collins RE (1978) Piezoelectricity and pyroelectricity in polyvinylidene fluoride—a model. J Appl Phys 49(10):4992–4997\nConstantino C, Job A, Simoes R, Giacometti J, Zucolotto V, Oliveira O Jr, Gozzi G, Chinaglia D (2005) Phase transition in poly (vinylidene fluoride) investigated with micro-raman spectroscopy. Appl Spectrosc 59(3):275–279\nRINALDO CRECORIO JaMC (1994) Effect of crystallization temperature on the crystalline phase content and morphology of poly (vinylidene fluoride). J Polym Sci, Part B: Polym Phys 32:859–870\nGuo Z, Nilsson E, Rigdahl M, Hagström B (2013) Melt spinning of pvdf fibers with enhanced β phase structure. J Appl Polym Sci 130(4):2603–2609\nda Silva AB, Wisniewski C, Esteves JVA, Gregorio R (2010) Effect of drawing on the dielectric properties and polarization of pressed solution cast β-pvdf films. 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KK, Parkinson BA: Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides. 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Appl Phys Lett 2010, 96: 082504. 10.1063\u002F1.3318254",{"doi":1298},{"id":2383,"createTime":2384,"updateTime":2385,"relativeEntities":2386,"slug":2387,"properties":2388,"entityType":101,"verifyStatus":102,"verifyTime":2399,"verifyNote":104,"languages":18,"translateLanguages":18,"viewCount":74,"primaryUrl":2400,"fullTextUrl":18,"authors":2401,"publicationType":210,"publisherRelationship":2456,"citationCount":18,"citationInfo":18,"publishDate":2497,"publishYear":1703,"citationAnalyzeStatus":2498,"lastCitationAnalyze":2499,"indexDatabases":2500,"openAccess":18,"references":18,"isForceReanalyzing":257},"e422fcec-c86b-4658-8156-c9097124e3cc","2023-12-20T08:17:32.440+00:00","2026-07-28T02:41:30.708+00:00",[],"Ultrasonic-modification-of-carbon-materials-for-electrochemical-capacitors",{"abstract":2389,"title":2391,"gsPaper":2393,"references":2395,"doi":2397},{"EN":2390},"The paper is devoted to study the ultrasonic impact on the biomass of natural raw materials, which were used for the creation a nanoporous carbon material (NCM), which was used as electrode material for electrochemical capacitors (EC). The dry shells of apricot seeds were a feedstock, which were modified by the chemical treatment in the phosphoric acid and part of them were impacted by ultrasonic waves for 25 minutes. The NCM, which were obtained by carbonization at 550 °C, were modified by chemical treatment in the nitric acid. Thus, the different of modification NCM was obtained to compare their capacitance characteristics for EC. From experimental data we can do a conclusion, that ultrasonic modification and chemical treatment in nitric acidare improvecapacitance characteristics of NCM for EC.",{"EN":2392},"Ultrasonic modification of carbon materials for electrochemical capacitors",{"VOID":2394},"[]",{"VOID":2396},"Conway BE (1999) Electrochemical supercapacitors: scientific fundamentals and technological applications. Kluwer Academic Plenum Publishers, New York\nMalyetin Yu, Strizhakova N, Zielinski A, Gozhenko B, Strelko V (2011) Supercapasitors - storage of electrical energy using nanoscale carbon materials. Visn NAS of Ukraine 12:23–29\nVolfkovych YM, Serdyuk TN (2002) Electrochemical capacitors. Elektrokhimiya 38(9):1043-1068\nBudzulyak IM, Rachiy BI, Vaschynskyy VM, Bereschuk MV (2015) Specific capacitance characteristics of carbon activated potassium hydroxide. Phys Chem Solid 16(1):98-103\nPerez-Maqueda L, Duran A, Perez-Rodriguez J (2005) Preparation of submicrontal particles by sonication. Applied Clay Sci 28:245-255\nZobov EM, Zobov ME, Gabibov FS, Kamilov IK, Manyakhin FI, Naimi EK (2008) Influence of ultrasonic treatment on photoelectric and luminescent properties of crystals ZnSe. Semiconductors 42(3):277–280\nBalaban OV (2014) Ultrasonic modification of electrode materials supercapacitors. Phys Surf Eng 12:163-168\nOstafiychuk BK, Budzulyak IM, Rachiy BI, Kuzyshyn MN, Vaschynskyy VN, Mykyteychuk PM, Ivanichok NJ, Merena RI (2014) Adsorption properties of carbon activated with orthophosphoric acid. Chem, Phys Technol Surf 5(2):204–209\nAipingYu, Chabot V, Zhang J (2013) Electrochemical supercapacitors for energy storage and delivery. CRC Press Taylor and Francis Group",{"VOID":2398},"10.1186\u002Fs11671-017-1842-1","2024-06-25T01:45:03.302+00:00","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1186\u002Fs11671-017-1842-1",[2402,2417,2430,2443],{"id":2403,"sortIndex":19,"researcher":18,"roles":2404,"affiliations":2405,"properties":2414,"displayName":2416,"givenName":18,"familyName":18},"a876a5ab-18e3-478d-a6de-bacd160179b1",[112],[2406],{"id":2407,"sortIndex":19,"affiliation":2408,"properties":18},"be557428-bc37-4bb0-aaef-2add0f7db87d",{"id":2407,"createTime":18,"updateTime":18,"relativeEntities":2409,"slug":18,"properties":2410,"entityType":18,"verifyStatus":18,"verifyTime":18,"verifyNote":18,"languages":18,"translateLanguages":18,"viewCount":18,"url":18,"parentIds":2413,"statistic":18},[],{"title":2411},{"VI":2412},"Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine",[],{"title":2415},{"VI":2416},"Bogdan I. 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