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X-ray photoelectron spectroscopy (XPS) and high-resolution electron-energy-loss spectroscopy (HREELS) data indicate that the epitaxial film grown on CoO(100) at 625 K and 5×10−7 Torr is Co3O4-like in both oxygen content and XP\u002FHREEL spectroscopic characteristics. Both materials are closest packed in lattice oxygen, with the mismatch of bulk O2−–O2− distances of approximately 5%. However, the Co3O4 is only able to grow to a thickness of approximately 5 Å before the oxidation process halts. It is proposed that the orientation of Co3O4 that forms most readily on the CoO(100) surface does not present a thermodynamically stable orientation of the bulk Co3O4 substrate but is that which grows under the constraint of the best CoO(100)\u002FCo3O4 epitaxial arrangement. 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The monolayers of OTS and FOETS amphiphiles were polymerized to form a Si–O–Si linkage on the water subphase. The polymerized monolayers were transferred onto a glass plate or silicon wafer surface by the upward drawing method and were covalently bonded to the Si–OH groups of the glass or silicon wafer surface. Electron diffraction patterns revealed that the OTS monolayer was in a crystalline state, while the FOETS monolayer was in an amorphous state at 293 K. The bright field image showed homogeneous molecular aggregation in the OTS and FOETS monolayers. The atomic force microscopic and frictional force microscopic images of the OTS\u002FFOETS mixed monolayers distinctly showed a phase-separated structure. Deposition of the OTS, FOETS, and OTS\u002FFOETS monolayers on the substrate was confirmed by attenuated total reflection Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy. A highly hydrophobic property was observed for OTS, FOETS, and OTS\u002FFOETS monolayer immobilized surfaces. 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(≤0.2 eV) x-ray absorption near edge structure (XANES) spectra have been recorded at the Si, P, and S 2p edges of several compounds using microchannel plates to detect the ultrasoft x-ray fluorescence after 2p excitation or ionization. The fluorescence yield (FY) XANES of SiO2, Si, InP, FeS2, and Na2S2O3 are of at least as good quality as the XANES recorded using total electron yield (TEY), despite the extremely small fluorescence yield. The FY spectra obtained show two significant advantages over the TEY spectra. First, the FY XANES is much more bulk sensitive; and second the resolution of the FY spectra is usually considerably better.\u003C\u002Fjats:p>",{"EN":534},"X-ray fluorescence measurements of x-ray absorption near edge structure at the Si, P, and S \u003Ci>L\u003C\u002Fi> edges",{"VOID":536},"10.1116\u002F1.578628",[140],"https:\u002F\u002Fpubs.aip.org\u002Fjva\u002Farticle\u002F11\u002F5\u002F2694\u002F443506\u002FX-ray-fluorescence-measurements-of-x-ray",[540,559,579,596],{"id":541,"sortIndex":188,"researcher":24,"roles":542,"affiliations":543,"properties":554},"a7fe802c-ed66-4668-b81a-9eb2118d040a",[],[544],{"id":545,"sortIndex":25,"affiliation":546,"properties":24},"8e89c089-8f17-49af-b2e3-fb78d40ac466",{"id":547,"createTime":548,"updateTime":548,"relativeEntities":549,"slug":550,"properties":551,"entityType":61,"verifyStatus":23,"verifyTime":24,"verifyNote":24,"syncStatus":23,"languages":24,"translateLanguages":24,"viewCount":25},"65a6e710-ab52-4e3a-99f7-812d0da5970e","2024-11-26T22:38:26.307+00:00",[],"Canadian-Synchrotron-Radiation-Facility-University-of-Wisconsin-Madison-Stoughton-Wisconsin-53589",{"title":552},{"EN":553},"Canadian Synchrotron Radiation Facility, University of Wisconsin-Madison, Stoughton, Wisconsin 53589",{"openalex":555,"title":557},{"VOID":556},"A5108369788",{"EN":558},"K. 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The outlook is good in electronics because the commercialization of SiGe\u002FSi heterotransitors is proceeding nicely. However, the pace of progress is slower in SiGe\u002FSi photonics. This article covers five innovative topics in an effort to enhance the development of heterostructure photonics: (1) band-gap studies of SiGeC, an alloy that can be lattice matched to Si, (2) direct-band-gap, strained heterostructures of GeSn upon GeSi\u002FSi, (3) silicon-based quantum-well intersubband lasers (ISBLs) including SiGe\u002FSi quantum-cascade, Raman, and inversionless ISBLs, (4) 1.5 μm ISBLs based on Si quantum wells with high barriers, such as heterosystems of Si\u002FZnS, and Si with SiO2\u002FSi strained superlattice barriers, and (5) low-cost substrates of 3C SiC upon SiO2\u002FSi, a platform for SiC heterodevices and for InGaN\u002FAlGaN heterodevices.\u003C\u002Fjats:p>",{"EN":665},"Silicon-based group IV heterostructures for optoelectronic applications",{"VOID":667},"10.1116\u002F1.580414",[140],"https:\u002F\u002Fpubs.aip.org\u002Fjva\u002Farticle\u002F14\u002F3\u002F913\u002F944981\u002FSilicon-based-group-IV-heterostructures-for",[671],{"id":672,"sortIndex":25,"researcher":24,"roles":673,"affiliations":674,"properties":685},"b258d912-449c-4160-81cd-3aa6ed2e68e6",[],[675],{"id":676,"sortIndex":25,"affiliation":677,"properties":24},"b76f6c1c-bce6-415c-a458-0bae9e599425",{"id":678,"createTime":679,"updateTime":679,"relativeEntities":680,"slug":681,"properties":682,"entityType":61,"verifyStatus":23,"verifyTime":24,"verifyNote":24,"syncStatus":23,"languages":24,"translateLanguages":24,"viewCount":25},"369fa42a-be7b-41a4-bc20-6df173cc48e3","2024-09-23T22:33:58.543+00:00",[],"USAF-Rome-Laboratory-RL-EROC-Hanscom-AFB-Massachusetts-01731",{"title":683},{"EN":684},"USAF Rome Laboratory, RL\u002FEROC, Hanscom AFB, Massachusetts 01731",{"openalex":686,"orcid":688,"title":690},{"VOID":687},"A5015687395",{"VOID":689},"https:\u002F\u002Forcid.org\u002F0000-0001-7303-7056",{"EN":691},"Richard Soref",{"url":24,"publisher":693,"properties":718},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":694,"slug":10,"properties":695,"entityType":22,"verifyStatus":23,"verifyTime":24,"verifyNote":24,"syncStatus":23,"languages":24,"translateLanguages":24,"viewCount":25,"subjectFields":701,"manageAffiliations":702,"indexDatabases":703,"url":115,"thumbnailPath":24,"statistic":24,"gsStatistic":24,"type":24,"analyzePriority":24},[],{"country":696,"issn":697,"introduce":698,"eissn":699,"title":700},{"VOID":13},{"VOID":15},{"EN":17},{"VOID":19},{"EN":21},[],[],[704,711],{"id":96,"indexDatabase":705,"url":111,"indexYears":24,"academicFieldIds":710,"indexDatabaseRanking":24},{"id":98,"createTime":99,"updateTime":100,"relativeEntities":706,"label":707,"description":708,"key":107,"publicationTags":709,"standard":24},[],{"EN":103,"VI":103},{"VI":105,"EN":106},[109,110],[113,114],{"id":75,"indexDatabase":712,"url":88,"indexYears":89,"academicFieldIds":717,"indexDatabaseRanking":94},{"id":77,"createTime":78,"updateTime":79,"relativeEntities":713,"label":714,"description":715,"key":85,"publicationTags":716,"standard":24},[],{"EN":82,"VI":82},{"EN":82,"VI":84},[87],[91,92,93],{"volume":719,"pages":720,"issue":722},{"VOID":397},{"VOID":721},"913-918",{"VOID":401},{"total":644,"publishYear":24,"statisticByYear":724},{"2012":244,"2013":188,"2014":209,"2015":166,"2016":188,"2017":166,"2019":209,"2020":209,"2021":244,"2022":244,"2023":244},[],{"id":727,"createTime":728,"updateTime":728,"relativeEntities":729,"slug":730,"properties":731,"entityType":136,"verifyStatus":137,"verifyTime":728,"verifyNote":138,"syncStatus":23,"languages":743,"translateLanguages":24,"viewCount":25,"primaryUrl":744,"fullTextUrl":24,"authors":745,"publicationType":258,"publisherRelationship":782,"citationCount":814,"citationInfo":815,"publishDate":828,"publishYear":829,"citationAnalyzeStatus":23,"lastCitationAnalyze":24,"indexDatabases":24,"openAccess":24,"references":830,"isForceReanalyzing":297},"d166c4a9-2501-4147-939f-e1111472fc03","2024-09-28T22:21:11.314+00:00",[],"Nature-of-the-use-of-adventitious-carbon-as-a-binding-energy-standard",{"mag":732,"keywords":734,"openalex":735,"abstract":737,"title":739,"doi":741},{"VOID":733},"2060205815",{},{"VOID":736},"W2060205815",{"EN":738},"\u003Cjats:p>It has become common practice to employ, as a binding energy reference for x-ray photoelectron spectroscopy studies on nonconductive materials, the C(1s) spectra of the ubiquitous (adventitious) carbon that seems to exhibit an instantaneous presence on all air exposed materials. Despite this commonality, surface scientists, including many practitioners, have expressed substantial concerns about the validity of this approach. A detailed discussion of the method is presented including consideration of the types of materials and the electronic energy states involved, e.g., Fermi edges, vacuum levels, etc., and the couplings that must exist for the referencing method to be correctly applied. A number of other surface environments for which the carbon referencing method may be fallacious are also presented. This leads to a consideration of the electron spectroscopy for chemical analysis results for different types of adventitious species and how the presence of some of these may confuse the use of the method. 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The changes in the carbon and metal core-level spectra and the chemical stoichiometries of polymer–metal interfaces with progressive deposition of the metal atoms were monitored. The interactions of the Al and In atoms with the polymer surfaces were compared. For both metals, a simple electrical contact was not formed. From the XPS studies, it was deduced that chemical reactions had occurred between the polymer and the metal, leading to the formation of an interfacial layer of metal oxides and complexes. The interfacial reactions were promoted by the surface oxidation states of the polymer, the migration of bulk adsorbed oxygen to the polymer surface upon metal deposition, and also in the case of MEH-PPV, by the oxygen from the alkoxy side chains.\u003C\u002Fjats:p>",{"EN":1285},"\u003Ci>In situ\u003C\u002Fi> x-ray photoelectron spectroscopy studies of interactions of evaporated metals with Poly(p-phenylene vinylene) and its ring-substituted derivatives",{"VOID":1287},"10.1116\u002F1.581658","2024-10-09T21:54:03.835+00:00",[140],"https:\u002F\u002Fpubs.aip.org\u002Fjva\u002Farticle\u002F17\u002F3\u002F853\u002F746863\u002FIn-situ-x-ray-photoelectron-spectroscopy-studies",[1292,1312,1327,1344,1366,1381],{"id":1293,"sortIndex":244,"researcher":24,"roles":1294,"affiliations":1295,"properties":1307},"b76c1f3d-42ba-4840-bb51-204548d243af",[],[1296],{"id":1297,"sortIndex":25,"affiliation":1298,"properties":24},"696ecd09-3aeb-4f91-95d7-d30302541417",{"id":1299,"createTime":1300,"updateTime":1301,"relativeEntities":1302,"slug":1303,"properties":1304,"entityType":61,"verifyStatus":23,"verifyTime":24,"verifyNote":24,"syncStatus":23,"languages":24,"translateLanguages":24,"viewCount":25},"8b569cd9-c796-4021-ad8b-be3ce0e3094a","2023-11-30T12:37:54.974+00:00","2024-10-09T21:54:03.846+00:00",[],"Department-of-Chemical-Engineering-National-University-of-Singapore-Kent-Ridge-119260-Singapore",{"title":1305},{"VI":1306},"Department of Chemical Engineering, National University of Singapore, Kent Ridge 119260, Singapore",{"openalex":1308,"title":1310},{"VOID":1309},"A5061080417",{"EN":1311},"S. 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Soc., Perkin Trans. 1, 1, 3225",{},{"id":24,"text":1181,"url":24,"identifiers":1492},{},{"id":24,"text":1181,"url":24,"identifiers":1494},{},{"id":24,"text":1496,"url":24,"identifiers":1497},"1993, Synth. Met., 55-57, 914",{},{"id":24,"text":1499,"url":24,"identifiers":1500},"1987, J. Phys. D, 20, 1389, 10.1088\u002F0022-3727\u002F20\u002F11\u002F007",{"doi":1501},"10.1088\u002F0022-3727\u002F20\u002F11\u002F007",{"id":24,"text":1503,"url":24,"identifiers":1504},"1996, J. Appl. Phys., 79, 2745, 10.1063\u002F1.361096",{"doi":1505},"10.1063\u002F1.361096",{"id":24,"text":1181,"url":24,"identifiers":1507},{},{"id":24,"text":1509,"url":24,"identifiers":1510},"1994, Synth. Met., 67, 39, 10.1016\u002F0379-6779(94)90009-4",{"doi":1511},"10.1016\u002F0379-6779(94)90009-4",{"id":24,"text":1513,"url":24,"identifiers":1514},"1998, J. Vac. Sci. Technol. A, 16, 13, 10.1116\u002F1.580961",{"doi":1515},"10.1116\u002F1.580961",{"id":24,"text":1517,"url":24,"identifiers":1518},"1997, J. Appl. Phys., 82, 4962, 10.1063\u002F1.366362",{"doi":1519},"10.1063\u002F1.366362",{"id":24,"text":1521,"url":24,"identifiers":1522},"1995, J. Appl. Phys., 77, 5642, 10.1063\u002F1.359206",{"doi":1523},"10.1063\u002F1.359206",{"id":24,"text":1181,"url":24,"identifiers":1525},{},{"id":24,"text":1527,"url":24,"identifiers":1528},"1994, J. Vac. Sci. Technol. A, 12, 513, 10.1116\u002F1.579161",{"doi":1529},"10.1116\u002F1.579161",{"id":24,"text":1531,"url":24,"identifiers":1532},"1996, Jpn. J. Appl. Phys., Part 2, 35, L317, 10.1143\u002FJJAP.35.L317",{"doi":1533},"10.1143\u002FJJAP.35.L317",{"id":24,"text":1535,"url":24,"identifiers":1536},"1989, J. Vac. Sci. Technol. A, 7, 2992, 10.1116\u002F1.576305",{"doi":1537},"10.1116\u002F1.576305",{"id":24,"text":1181,"url":24,"identifiers":1539},{},{"id":24,"text":1181,"url":24,"identifiers":1541},{},{"id":24,"text":1181,"url":24,"identifiers":1543},{},{"id":24,"text":1545,"url":24,"identifiers":1546},"1996, Semicond. Sci. Technol., 11, 196, 10.1088\u002F0268-1242\u002F11\u002F2\u002F009",{"doi":1547},"10.1088\u002F0268-1242\u002F11\u002F2\u002F009",{"id":24,"text":1549,"url":24,"identifiers":1550},"1987, J. Vac. Sci. Technol. A, 5, 231, 10.1116\u002F1.574109",{"doi":1551},"10.1116\u002F1.574109",{"id":24,"text":1181,"url":24,"identifiers":1553},{}]