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Science Citation Index Expanded",{"EN":74,"VI":75},"SCIE database","Cơ sở dữ liệu SCIE","scie",[78,79],"SCIE","ISI","https:\u002F\u002Fmjl.clarivate.com\u002Fsearch-results?issn=0361-5235",[82,83,84],"751df115-4b08-418e-b118-c9d9a4c8e64c","0db73426-2364-455f-81a4-efe0f91d712e","0a89cee9-2df6-4b14-8fcb-700fd0044c25",{"id":86,"indexDatabase":87,"url":97,"indexYears":98,"academicFieldIds":99,"indexDatabaseRanking":104},"e925d20c-61c1-431c-8c00-e393f3f297dc",{"id":88,"createTime":22,"updateTime":22,"relativeEntities":89,"label":90,"description":92,"key":94,"publicationTags":95,"standard":22},"3c7051d4-eb7d-4c57-a56b-36fc74c5d1e9",[],{"EN":91,"VI":91},"Scopus - Elsevier",{"EN":91,"VI":93},"Cơ sở dữ liệu Scopus thuộc Elsevier","scopus",[96],"SCOPUS","https:\u002F\u002Fwww.scopus.com\u002Fsourceid\u002F26620","1972-2025",[100,101,102,103],"71c20870-549f-47ca-ab5d-72466dbb5bc3","d16634fe-785a-40dd-922e-b8be2c1800c5","a81768cc-7885-48eb-a85a-170d5a0a5f4f","0e6bd987-5c67-4e9a-8af2-07c289f5e45c","SCOPUS__Q1",{"impactFactor":23,"impactFactorByYear":106,"i10Index":107,"i10IndexLast5Year":108,"totalPublication":109,"totalPublicationByYear":110,"totalCitation":119,"totalCitationByYear":157,"totalCitationPerPublication":23,"totalCitationPerPublicationByYear":160,"hindexLast5Year":159,"hindex":159},{"2018":23,"2019":23,"2020":23},2,1,8146,{"1972":111,"1973":112,"1974":113,"1975":114,"1976":115,"1977":113,"1978":116,"1979":117,"1980":118,"1981":117,"1982":119,"1983":120,"1984":119,"1985":121,"1986":119,"1987":122,"1988":123,"1989":124,"1990":125,"1991":126,"1992":127,"1993":128,"1994":129,"1995":130,"1996":131,"1997":132,"1998":133,"1999":134,"2000":135,"2001":136,"2002":137,"2003":138,"2004":139,"2005":138,"2006":140,"2007":141,"2008":142,"2009":143,"2010":144,"2011":144,"2012":145,"2013":146,"2014":147,"2015":148,"2016":149,"2017":150,"2018":151,"2019":152,"2020":153,"2021":154,"2022":154,"2023":155,"2024":156},19,20,27,42,24,23,31,32,33,35,29,30,44,60,105,83,90,140,96,151,153,117,121,137,110,155,111,124,126,169,174,128,198,204,240,275,339,370,460,410,415,519,357,375,359,59,{"2017":158,"2018":159,"2019":112},10,3,{"2017":161,"2018":162,"2019":163},0.02,0.01,0.04,"JOURNAL",{"meta":166,"data":168},{"total":167},"10922",[169,339,480,665,801,1147,1354,1484,1619,1833],{"id":170,"createTime":171,"updateTime":172,"relativeEntities":173,"slug":174,"properties":175,"entityType":186,"verifyStatus":187,"verifyTime":188,"verifyNote":189,"languages":22,"translateLanguages":22,"viewCount":23,"primaryUrl":190,"fullTextUrl":22,"authors":191,"publicationType":270,"publisherRelationship":271,"citationCount":158,"citationInfo":331,"publishDate":334,"publishYear":332,"citationAnalyzeStatus":335,"lastCitationAnalyze":336,"indexDatabases":337,"openAccess":22,"references":22,"isForceReanalyzing":338},"3ae0b7a1-1c50-4522-8143-7f64d57bd61a","2023-12-14T03:39:02.752+00:00","2026-08-20T03:24:45.569+00:00",[],"The-effects-of-thermal-annealing-on-the-microstructural-optical-and-electrical-properties-of-beta-silicon-carbide-films-implanted-with-boron-or-nitrogen",{"abstract":176,"title":178,"gsPaper":180,"references":182,"doi":184},{"EN":177},"The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials.",{"EN":179},"The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen",{"VOID":181},"[\"16297327694756806250\"]",{"VOID":183},"H. J. Kim and R. F. Davis, J. Electrochem. Soc.132, 2350 (1986).\nL. J. Kroko and A. G. Milnes, Solid State Electron.9, 1125 (1966).\nH. L. Dunlap and 0. J. Marsh, Appl. Phys. Lett.15, 311 (1969).\nO. J. Marsh and H. L. Dunlap, Radiat. Eff.6, 301 (1970).\nO. J. Marsh inSilicon Carbide—1973, R. C. Marshall, J. W. Faust and C. E. Ryan, eds., University of South Carolina Press, Columbia, SC (1974), pp. 471–485.\nR. R. Hart, H. L. Dunlap and 0. J. Marsh, Radiat. Eff.9, 262 (1971).\nJ. Comas, W. Lucke and A. Addamiano, Bull. Am. Phys. Soc.18, 606 (1973).\nA. Addamiano, G. W. Anderson, J. Comas, H. L. Hughes and W. Lucke, J. Electrochem. Soc.119, 1355 (1972).\nS. Nishino, Y. Hazuki, H. Matsunami and T. Tanaka, J. Electrochem. Soc.127, 2674 (1980).\nS. Nishino, J. A. Powell and H. A. Will, App. Phys. Lett.42, 460 (1983).\nA. Addamiano and J. Sprague, Appl. Phys. Lett.44, 525 (1984).\nK. Sasaki, E. Sakuma, S. Misawa, S. Yoshida and S. Gonda, Appl. Phys. Lett.45, 72 (1984).\nA. Suzuki, K. Fujrukawa, Y. Higashigaki, S. Harada, S. Nakajima and T. Inoguchi, J. Cryst. Growth70, 287 (1984).\nA. Addamiano and P. H. Klein, J. Cryst. Growth70, 291 (1984).\nH. P. Liaw and R. F. Davis, J. Electrochem. Soc.132, 642 (1985).\nH. J. Kim and R. F. Davis, J. Electrochem. Soc.133, 2350 (1986).\nH. J. Kim, R. F. Davis, X. B. Cox and R. W. Linton, J. Electrochem. Soc.134, 3329 (1987).\nW. J. Choyke, Z. C. Feng and A. Powell, J. Appl. Phys64, 3163 (1988).\nC. H. Carter, Jr., R. F. Davis and S. R. Nutt, J. Mat. Res.1, 811 (1986).\nJ. A. Copeland, IEEE Trans. Electron Devices ED-16, 445 (1969).\nL. J. van der Pauw, Philips Res. Rep.13, 1 (1958).\nI. Eisele, H. Gesch and G. Dorda, Solid State Commun.22, 185 (1977).\nP. Das D. K. Ferry and A. H. Barr, Surf. Sci.73, 147 (1978).\nD. Olego and M. Cardona, Phys. Rev. B25, 3878 (1982).\nD. W. Feldman, J. H. Parker, Jr., W. J. Choyke and L. Patrick, Phys. Rev.173, 787 (1968).\nP. S. Peercy, Appl. Phys. Lett.18, 574 (1971).\nH. J. Kim, Ph.D. Dissertation, North Carolina State University, Raleigh, NC (1985).\nS. M. Sze,Physics of Semiconductor Devices, 2nd Ed., John Wiley and Sons, NY (1981), p. 31.\nP. J. Dean, W. J. Choyke and L. Patrick, J. Lumin.15, 299 (1977).\nD. R. Hamilton, L. Patrick and W. J. Choyke, Phys. Rev.131, 127 (1963).\nW. E. Carlos, W. J. Moore, P. G. Siebenmann, J. Freitas, R. Kaplan, S. G. Bishop, P.E.R. Nordquist, H. Kong and R. F. Davis, Abstract #13.7 in the 1987 Spring Meeting of the Materials Research Society, Anaheim, CA, April 21–32, 1987.\nB. Segall, S. A. Alterovitz, E. J. Haugland and L. G. Matus, App. Phys. Lett.50, 1533 (1987).\nJ. A. Freitas, S. G. Bishop, J. A. Edmond, J. Ryu and R. F. Davis, J. Appl. Phys61, 2011 (1987).\nW. J. Choyke and L. Patrick, Phys. Rev. B 4, 1843 (1971).",{"VOID":185},"10.1007\u002FBF02657402","PUBLICATION","VERIFIED","2024-06-26T18:00:37.272+00:00","Auto Verify","https:\u002F\u002Flink.springer.com\u002F10.1007\u002FBF02657402",[192,217,240,255],{"id":193,"sortIndex":23,"researcher":22,"roles":194,"affiliations":196,"properties":214},"a4f71d85-a755-46e3-a3a9-5fbcceb6f0bf",[195],"AUTHOR",[197,205],{"id":198,"sortIndex":23,"affiliation":199,"properties":22},"5734f1fa-054e-4c81-8794-43868b546947",{"id":198,"createTime":22,"updateTime":22,"relativeEntities":200,"slug":22,"properties":201,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":204,"statistic":22},[],{"title":202},{"VI":203},"Department of Materials Science and Engineering, North Carolina State University, Raleigh",[],{"id":206,"sortIndex":108,"affiliation":207,"properties":213},"d4e91fe4-a636-47e7-81f1-67d7b1cee5b8",{"id":206,"createTime":22,"updateTime":22,"relativeEntities":208,"slug":22,"properties":209,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":212,"statistic":22},[],{"title":210},{"VI":211},"Center for Electromagnetic Research, Northeastern University, Boston",[],{},{"title":215},{"VI":216},"J. Ryu",{"id":218,"sortIndex":108,"researcher":22,"roles":219,"affiliations":220,"properties":235},"5dfc25e8-1778-4eda-94b6-0aee8b69bc33",[195],[221,227],{"id":198,"sortIndex":23,"affiliation":222,"properties":22},{"id":198,"createTime":22,"updateTime":22,"relativeEntities":223,"slug":22,"properties":224,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":226,"statistic":22},[],{"title":225},{"VI":203},[],{"id":228,"sortIndex":108,"affiliation":229,"properties":22},"0cae8999-576b-4164-85f7-628621976ff5",{"id":228,"createTime":22,"updateTime":22,"relativeEntities":230,"slug":22,"properties":231,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":234,"statistic":22},[],{"title":232},{"VI":233},"Department of Inorganic Materials Engineering, Seoul National University, Seoul, Korea",[],{"title":236,"gsAuthor":238},{"VI":237},"H. J. Kim",{"VOID":239},"[\"iMO2m94AAAAJ\"]",{"id":241,"sortIndex":107,"researcher":22,"roles":242,"affiliations":243,"properties":250},"2f435cee-d4fe-4302-aadb-588d3e285d19",[195],[244],{"id":198,"sortIndex":23,"affiliation":245,"properties":22},{"id":198,"createTime":22,"updateTime":22,"relativeEntities":246,"slug":22,"properties":247,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":249,"statistic":22},[],{"title":248},{"VI":203},[],{"title":251,"gsAuthor":253},{"VI":252},"J. T. 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Steady-state creep tests in shear are combined with electron backscatter diffraction (EBSD) analysis of the evolution of the microstructure during creep to clarify the deformation mechanism and the nature of the microstructural evolution. The creep behavior of the joint changes significantly with temperature. At low temperature (65°C), two distinct creep mechanisms are observed. Low-stress creep is apparently dominated by grain boundary sliding, as evidenced by the low stress exponent (n ≈ 4), low activation energy (Q ≈ 42 kJ\u002Fmole), and significant grain rotation during creep. High-stress creep is dominated by bulk deformation processes, evidenced by a high stress exponent (n ≈ 9), an activation energy like that for bulk diffusion (Q ≈ 70 kJ\u002Fmole), and a relatively fixed microstructure. At high temperature all aspects of its behavior are consistent with deformation by bulk creep mechanisms; the stress exponent and activation energy are high (n ≈ 5 to 7, Q ≈ 96 kJ\u002Fmole), and despite significant grain coarsening, the microstructure retains (and strengthens) a fixed [001] texture. The results suggest that a “segmented” constitutive equation of Dorn type is most suitable for the low-temperature behavior, while a “hyperbolic” constitutive equation may be preferable at high temperature.",{"EN":349},"Mechanisms of Creep Deformation in Pure Sn Solder Joints",{"VOID":351},"[\"17019635489870751142\"]",{"VOID":353},"H. Yang, P. Deane, P. Magill, and K. Linga Murty, Electronic Components and Technology Conference (Piscataway, NJ: IEEE, 1996), p. 1136.\nD.R. Frear, D. Grivas, and J.W. Morris Jr, J. Electron. Mater. 17, 171 (1988).\nA.D. Rollett, D.J. Srolovitz, M.P. Anderson, and R.D. Doherty, Acta Metall. Mater. 40, 3475 (1992).\nD. Fan, L.Q. Chen, and S.P.P. Chen, J. Am. Ceram. Soc 81, 526 (1998).\nM. Miodownik, E.A. Holm, and G.N. Hassold, Scr. Mater. 42, 1173 (2000).\nE.A. Holm and C.C. Battaile, JOM 53 (9), 20 (2001).\nE.A. Holm, G.N. Hassold, and M.A. Mioirownik, Acta Mater. 49, 2981 (2001).\nS. Choi, K.N. Subramanian, J.P. Lucas, and T.R. Bieler, J. Electron. Mater. 29, 1249 (2000).\nA.U. Telang, T.R. Bieler, S. Choi, and K.N. Subramanian, J. Mater. Res. 17, 2294 (2002).\nY. Ding, C. Wang, M. Li, and H.S. Bang, J. Mater. Res. 40, 1993 (2005).\nJ.W. Morris Jr. and H.L. Reynodls, Design and Reliability of Solders and Solder Interconnections, ed. R.K. Mahidara, S.M. Sastry, and P.K. Liaw (Warrendale, PA: TMS, 1997), p. 49.\nH.J. Frost and M.F. Ashby, Deformation-Mechanism Maps (New York: Pergamon, 1982).\nK.O. Lee, J.W. Morris Jr., and F. Hua, Metall. Mater. Trans. 41A, 1805 (2010).\nS.J. Zaefferer, Appl. Cryst 30, 10 (2000).\nA.U. Telang, T.R. Bieler, D.E. Mason, and K.N. Subramanian, J. Electron. Mater. 32, 1455 (2005).\nJ.E. Bird, A.K. Mukherjee, and J.E. Dorn, Quantitative Relation Between Properties and Microstructre, ed. D.G. Brandon and A. Rosen (Jerusalem: Israel University Press, 1969), p. 255.\nH.G. Song, J.W. Morris, and F. Hua, JOM 54 (6), 30 (2002).\nR. Darveaux, Electronic Components and Technology Conference (Piscataway: IEEE, 2005), p. 882.\nJ.E. Breen and J. Weertman, J. Met. 72, 1230 (1955).\nR. Darveaux and K. Banerji, IEEE Trans. Comp. Hybrids Manuf. Technol. 15, 1013 (1993).\nH. Mavoori, J. Chin, S. Vaynman, B. Moran, L. Keer, and M. Fine, J. Electron. Mater. 26, 783 (1997).\nG. Pawlicki, Nukleonika 12, 1123 (1967).\nC. Coston and N.H. Nachtrieb, J. Phys. Chem. 68, 1123 (1964).\nW. Chomba and J. Andewskiewicz, Nukleoika 5, 611 (1960).\nV. Raman and R. Berriche, J. Mater. Res. 7, 627 (1992).\nS.N.G. Chu and J.C.M. Li, Mater. Sci. Eng. 39, 1 (1979).\nM. Fujiwara and T. Hirokawa, J. Jpn. Inst. Met. 51, 830 (1987).\nF. 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Although Al-doped β-Ga2O3 films have been prepared with various methods, challenges remain in the adjustment of crystal quality to obtain superior properties. In this paper, (AlxGa1–x)2O3 (denoted as AGO) films were deposited by magnetron co-sputtering at different bias voltages and annealed at 900°C in air. The dependence of the crystal structure, morphology, and optical properties of the films on bias voltage was investigated. The AGO films exhibit a preferred orientation in the (\n                \n                  \n                \n                $$\\overline{2}$$\n                \n               01) plane at various biases, as evidenced by the x-ray diffraction measurements. The films with various bias voltages yield higher crystal quality with optical bandgap of about 5.0 eV. In addition, the AGO films demonstrate 95% absolute average transmittance in the UV-Vis wavelength range. This method thus opens a new way for controlling the quality and properties of AGO films with bias. \n                  \n                    \n                      \n                    \n                  \n                ",{"EN":675},"Effects of Substrate Bias Voltage on Structural and Optical Properties of Co-Sputtered (AlxGa1–x)2O3 Films",{"VOID":490},{"VOID":678},"W. Zhu, L. Xiong, J. Si, Z. Hu, X. Gao, L. Long, T. Li, R. Wan, L. Zhang, and L. Wang, Influence of deposition temperature on amorphous Ga2O3 solar-blind ultraviolet photodetector. Semicond. Sci. Technol. 35, 055037 (2020). https:\u002F\u002Fdoi.org\u002F10.1088\u002F1361-6641\u002Fab6ac1.\nJ. Wang, L. Ye, X. Wang, H. Zhang, L. Li, C. Kong, and W. Li, High transmittance β- Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector. J. Alloys Compd. 803, 9–15 (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jallcom.2019.06.224.\nT. Kamimura, K. Sasaki, M. Hoi-Wong, D. Krishnamurthy, A. Kuramata, T. Masui, S. Yamakoshi, and M. Higashiwaki, Band alignment and electrical properties of Al2O3\u002Fβ-Ga2O3 heterojunctions. Appl. Phys. Lett. 104, 192104 (2014). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4876920.\nX.C. Guo, N.H. Hao, D.Y. Guo, Z.P. Wu, Y.H. An, X.L. Chu, L.H. Li, P.G. Li, M. Lei, and W.H. Tang, β-Ga2O3\u002Fp -Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity. J. Alloys Compd. 660, 136–140 (2016). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jallcom.2015.11.145.\nM. Orita, H. Ohta, M. Hirano, and H. Hosono, Deep-ultraviolet transparent conductive -Ga2O3 thin films. Appl. Phys. Lett. 77, 25 (2000). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.1330559.\nM. Higashiwaki, K. Sasaki, T. Kamimura, M. Hoi-Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics. Appl. Phys. Lett. 103, 123511 (2013). https:\u002F\u002Fdoi.org\u002F10.1063\u002F1.4821858.\nQ. Feng, X. Li, G. Han, L. Huang, F. Li, W. Tang, J. Zhang, and Y. Hao, (AlGa)2O3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity. Opt. Mater. Express. 7, 1240 (2017). https:\u002F\u002Fdoi.org\u002F10.1364\u002FOME.7.001240.\nZ. Hu, Q. Feng, J. Zhang, F. Li, X. Li, Z. Feng, C. Zhang, and Y. Hao, Optical properties of (AlxGa1−x)2O3 on sapphire. Superlattices Microstruct. 114, 82–88 (2018). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.spmi.2017.12.013.\nS. Kim, H. Ryou, I.G. Lee, M. Shin, and W.S. Hwang, Impact of Al doping on a hydrothermally synthesized β-Ga2O3 nanostructure for photocatalysis applications. RSC Adv. 11, 7338–7346 (2021). https:\u002F\u002Fdoi.org\u002F10.1039\u002FD1RA00021G.\nY. Nie, S. Jiao, F. Meng, H. Lu, D. Wang, L. Li, S. Gao, J. Wang, and X. Wang, Growth and properties analysis of AlxGa2-xO3 thin film by radio frequency magnetron sputtering using Al\u002FGa2O3 target. J. Alloys Compd. 798, 568–575 (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jallcom.2019.05.268.\nF. Zhang, C. Hu, M. Arita, K. Saito, T. Tanaka, and Q. Guo, Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition. CrystEngComm 22, 142–146 (2020). https:\u002F\u002Fdoi.org\u002F10.1039\u002FC9CE01541H.\nS.-D. Lee, Y. Ito, K. Kaneko, and S. Fujita, Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping. Jpn. J. Appl. Phys. 54, 030301 (2015). https:\u002F\u002Fdoi.org\u002F10.7567\u002FJJAP.54.030301.\nW. Hu, S. Li, Y. Hu, L. Wan, S. Jiao, W. Hu, D.N. Talwar, Z.C. Feng, T. Li, J. Xu, L. Wei, and W. Guo, Optical and electronic properties of (AlxGa1−x)2O3\u002FAl2O3 (x>04) films grown by magnetron sputtering. J. Alloys Compd. 864, 158765 (2021). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jallcom.2021.158765.\nP.-W. Chen, S.-Y. Huang, C.-C. Wang, S.-H. Yuan, and D.-S. Wuu, Influence of oxygen on sputtering of aluminum-gallium oxide films for deep-ultraviolet detector applications. J. Alloys Compd. 791, 1213–1219 (2019). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jallcom.2019.03.339.\nX. Sun, K. Gao, X. Pang, and H. Yang, Interface and strain energy revolution texture map to predict structure and optical properties of sputtered PbSe thin films. ACS Appl. Mater. Interfaces. 8, 625–633 (2016). https:\u002F\u002Fdoi.org\u002F10.1021\u002Facsami.5b09724.\nS.-H. Yuan, C.-C. Wang, S.-Y. Huang, and D.-S. Wuu, Improved responsivity drop from 250 to 200 nm in sputtered gallium oxide photodetectors by incorporating trace aluminum. IEEE Electron Device Lett. 39, 220–223 (2018). https:\u002F\u002Fdoi.org\u002F10.1109\u002FLED.2017.2782693.\nC.-C. Wang, S.-H. Yuan, S.-L. Ou, S.-Y. Huang, K.-Y. Lin, Y.-A. Chen, P.-W. Hsiao, and D.-S. Wuu, Growth and characterization of co-sputtered aluminum-gallium oxide thin films on sapphire substrates. J. Alloys Compd. 765, 894–900 (2018). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jallcom.2018.06.270.\nC. He, J. Zhang, G. Ma, Z. Du, J. Wang, and D. Zhao, Influence of bias voltage on structure, mechanical and corrosion properties of reactively sputtered nanocrystalline TiN films. J. Iron Steel Res. Int. 24, 1223–1230 (2017). https:\u002F\u002Fdoi.org\u002F10.1016\u002FS1006-706X(18)30021-9.\nH. Wang, S. Zhang, Y. Li, and D. Sun, Bias effect on microstructure and mechanical properties of magnetron sputtered nanocrystalline titanium carbide thin films. Thin Solid Films 516, 5419–5423 (2008). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.tsf.2007.07.022.\nI. Ahmad, S.S. Roy, P.D. Maguire, P. Papakonstantinou, and J.A. McLaughlin, Effect of substrate bias voltage and substrate on the structural properties of amorphous carbon films deposited by unbalanced magnetron sputtering. Thin Solid Films 482, 45–49 (2005). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.tsf.2004.11.158.\nT. Oshima, T. Okuno, and S. Fujita, Ga2O3 Thin film growth on c -plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors. Jpn. J. Appl. Phys. 46, 7217–7220 (2007). https:\u002F\u002Fdoi.org\u002F10.1143\u002FJJAP.46.7217.\nS. Li, S. Jiao, D. Wang, S. Gao, and J. Wang, The influence of sputtering power on the structural, morphological and optical properties of β-Ga2O3 thin films. J. Alloys Compd. 753, 186–191 (2018). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.jallcom.2018.04.196.\nA. Goyal, B.S. Yadav, O.P. Thakur, A.K. Kapoor, and R. Muralidharan, Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique. J. 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Phys. 16, 231–239 (2016). https:\u002F\u002Fdoi.org\u002F10.1016\u002Fj.cap.2015.12.004.",{"VOID":680},"10.1007\u002Fs11664-023-10673-7","2024-09-04T18:16:37.066+00:00","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs11664-023-10673-7",[684,699,712,725],{"id":685,"sortIndex":23,"researcher":22,"roles":686,"affiliations":687,"properties":696},"54019466-0e2b-4a4c-8bb8-741816eea197",[195],[688],{"id":689,"sortIndex":23,"affiliation":690,"properties":22},"9695d97f-b5de-4f32-bf38-cc8253cc498e",{"id":689,"createTime":22,"updateTime":22,"relativeEntities":691,"slug":22,"properties":692,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":695,"statistic":22},[],{"title":693},{"VI":694},"Beijing Key Lab of Special Elastomeric Composite Materials, College of New Materials and Chemical Engineering, Beijing Institute of Petrochemical Technology, Daxing District, Beijing, 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We observed that the GMI effect and magnetic softness of glass-coated microwires produced by the Taylor–Ulitovski technique can be tailored by controlling the magnetoelastic anisotropy of as-prepared FeCuNbSiB microwires, and can also be considerably improved either by heat treatment and\u002For choosing the suitable fabrication conditions. We observed a considerable magnetic softening of the microwires after the appropriate annealing. This magnetic softening correlates with the devitrification of amorphous samples. Amorphous Fe-rich microwires exhibited a low GMI effect (GMI ratio below 5%). A considerable enhancement of the GMI effect (GMI ratio up to 100%) has been observed in heat-treated microwires with nanocrystalline structure.",{"EN":811},"Effect of Nanocrystallization on Magnetic Properties and GMI Effect of Fe-rich Microwires",{"VOID":813},"[\"17551532277590737753\"]",{"VOID":815},"10.1007\u002Fs11664-014-3370-4","2024-05-03T04:29:15.560+00:00","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs11664-014-3370-4",[819,844,865,885,898,913,926],{"id":820,"sortIndex":23,"researcher":22,"roles":821,"affiliations":822,"properties":839},"496d523d-3d65-4183-9fa1-2e5337c96842",[195],[823,831],{"id":824,"sortIndex":23,"affiliation":825,"properties":22},"0369c2c4-5f3d-46e9-9733-c0fb00341936",{"id":824,"createTime":22,"updateTime":22,"relativeEntities":826,"slug":22,"properties":827,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":830,"statistic":22},[],{"title":828},{"VI":829},"Department of Materials Physics, Basque Country University, UPV\u002FEHU, \tSan Sebastian, Spain",[],{"id":832,"sortIndex":108,"affiliation":833,"properties":22},"17c2079b-1fa0-4225-8a90-74316008c31c",{"id":832,"createTime":22,"updateTime":22,"relativeEntities":834,"slug":22,"properties":835,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":838,"statistic":22},[],{"title":836},{"VI":837},"Dpto. de Física Aplicada, EUPDS, Basque Country University, UPV\u002FEHU, San Sebastian, Spain",[],{"title":840,"gsAuthor":842},{"VI":841},"V. 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Rogalski,Infrared Phys. 28, 139 (1988).",{},{"id":22,"text":1307,"url":22,"identifiers":1308},"M.B. Reine, A.K. Sood, and T.J. Tredwell,Semiconductors and Semimetals, Vol. 18, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1981), pp. 238–240.",{},{"id":22,"text":1310,"url":22,"identifiers":1311},"K.L. Luke and L. Cheng,J. Appl. Phys. 61, 2282 (1987).",{},{"id":22,"text":1313,"url":22,"identifiers":1314},"V.K.S. Ong, J.C.H. Phang, and D.S.H. Chan,Solid-State Electron. 37, 1 (1994).",{},{"id":22,"text":1316,"url":22,"identifiers":1317},"J.T. Wallmark,Proc. IRE, 45, 474 (1957).",{},{"id":22,"text":1319,"url":22,"identifiers":1320},"Medici, version 1998.4.1 (Fremont, CA: Avant! Corp. and TMA Inc., 1998).",{},{"id":22,"text":1322,"url":22,"identifiers":1323},"W. Fang and K. Ito,SIAM J. Appl. Math., 52, 1611 (1992).",{},{"id":22,"text":1325,"url":22,"identifiers":1326},"S. Busenberg, W. Fang, and K. Ito,SIAM J. Appl. Math., 53, 187 (1993).",{},{"id":22,"text":1328,"url":22,"identifiers":1329},"W. Fang and K. Ito,SIAM J. Appl. Math. 54, 1067 (1994).",{},{"id":22,"text":1331,"url":22,"identifiers":1332},"D.A. Redfern, W. Fang, K. Ito, J.M. Dell, and L. Faraone (unpublished).",{},{"id":22,"text":1334,"url":22,"identifiers":1335},"A.I. D'Souza, P.S. Wijewarnasuriya, R.E. Dewarmes, G. Hilderbrandt, J. Bajaj, D.D. Edwall, J.G. Pasko, and J.M. Arias,J. Electron. Mater. 28, 611 (1999).",{},{"id":22,"text":1337,"url":22,"identifiers":1338},"J.P. Rosbeck, R.E. Starr, S.L. Price, and K.J. Riley,J. Appl. Phys. 53, 6430 (1982).",{},{"id":22,"text":1340,"url":22,"identifiers":1341},"J.M. Dell, J. Antoszewski, M.H. Rais, C.A. Musca, J.K. White, B.D. Nener, and L. Faraone,J. Electron. Mater 29, 841 (2000).",{},{"id":22,"text":1343,"url":22,"identifiers":1344},"R. Fastow, D. Goren, and Y. Nemirovsky,J. Appl. Phys. 68, 3405 (1990).",{},{"id":22,"text":1346,"url":22,"identifiers":1347},"S. Barton, D. Dutton, P. Capper, C.L. Jones, and N. Metcalfe,J. Electron. Mater. 21, 1759 (1995).",{},{"id":22,"text":1349,"url":22,"identifiers":1350},"T.N. Casselman and P.E. Petersen,Solid State Commun. 33, 615 (1980).",{},{"id":22,"text":1352,"url":22,"identifiers":1353},"T.N. Casselman,J. Appl. Phys., 52, 848 (1981).",{},{"id":1355,"createTime":1356,"updateTime":1357,"relativeEntities":1358,"slug":1359,"properties":1360,"entityType":186,"verifyStatus":187,"verifyTime":1371,"verifyNote":189,"languages":22,"translateLanguages":22,"viewCount":23,"primaryUrl":1372,"fullTextUrl":22,"authors":1373,"publicationType":270,"publisherRelationship":1419,"citationCount":23,"citationInfo":1479,"publishDate":1482,"publishYear":1480,"citationAnalyzeStatus":335,"lastCitationAnalyze":1357,"indexDatabases":1483,"openAccess":22,"references":22,"isForceReanalyzing":338},"3b134378-4fd3-4b9e-80c9-06401a61cea3","2023-12-29T16:11:04.528+00:00","2026-08-14T21:07:52.016+00:00",[],"Low-cycle-fatigue-behavior-and-mechanisms-of-a-lead-free-solder-96-5Sn-3-5Ag",{"abstract":1361,"title":1363,"gsPaper":1365,"references":1367,"doi":1369},{"EN":1362},"Low-cycle fatigue tests of as-cast Sn-Ag eutectic solder (96.5Sn\u002F3.5Ag) were performed using a noncontact strain controlled system at 20°C. The fatigue behavior followed the Coffin-Manson equation with a fatigue-ductility exponent of 0.76. Without local deformation and stress concentration at contact points between the extensometer and the specimen surface in strain-controlled fatigue tests, crack initiation and propagation behavior was observed on the specimen surface using a replication technique. After failure, the longitudinal cross sections were also examined using scanning electron microscopy (SEM). Microcracks initiated from steps at the boundary between the Sn-dendrite and the Sn-Ag eutectic structure and cavities along the boundaries especially around the Ag3Sn particles. Stage II crack propagated in mixed manner with intergranular cracks along the Sn-dendrite boundaries and transgranular cracks through the Sn-dendrites and the Sn-Ag eutectic structure. Propagation of stage II cracks could be expressed by the relation of dac\u002FdN = 4.7 × 10−11[ΔJ]1.5, where ac is the average crack length and ΔJ is the J-integral range. After fatigue tests, small grains were observed in Sn-dendrites near the fracture surface.",{"EN":1364},"Low-cycle fatigue behavior and mechanisms of a lead-free solder 96.5Sn\u002F3.5Ag",{"VOID":1366},"[\"5920181462773648501\"]",{"VOID":1368},"M. Abtew and G. Selvaduray, Mater. Sci. Eng. 27, 95 (2000).\nY. Kariya and M. Otsuka, J. Electron. Mater. 27, 1229 (1998).\nH.D. Solomon, J. Electron. Packaging 113, 102 (1991).\nJ. Liang, N. Gollhardt, P.S. Lee, S.A. Schroeder, and W.L. Morris, Fatigue Fract. Eng. Mater. Struct. 19, 1401 (1996).\nR.S. Whitelaw, R.W. Neu, and D.T. Scott, J. Electron. Packaging 121, 99 (1999).\nC. Kanchanomai, S. Yamamoto, Y. Miyashita, Y. Mutoh, and A.J. McEvily, Int. J. Fatigue 24, 57 (2002).\nASTM, ASTM E606: Standard Practice for Strain-Controlled Fatigue Testing (Philadelphia, PA: ASTM, 1998), vol. 03.01, p. 525.\nE.C. Cutiongco, S. Vaynman, M.E. Fine, and D.A. Jeannotte, J. Electron. Packaging 112, 110 (1990).\nJ.F. Smith and R.R. Kubalak, in Metals Handbook, ed. W.A. Cubberly (Metals Park, OH: ASM, 1979), p. 613.\nL.F. Coffin, Jr., Trans. ASME 76, 931 (1954).\nS.S. Manson, Behavior of Materials under Conditions of Thermal Stress, Heat Transfer Symp. (Ann Arbor, MI: University of Michigan Press, 1953), p. 9.\nC. Kanchanomai, Y. Miyashita, and Y. Mutoh, Int. J. Fatigue (to be published).\nY. Kariya and M. Otsuka, J. Electron. Mater. 27, 866 (1998).\nH.D. Solomon, J. Electron. Packaging 112, 123 (1990).\nH.D. Solomon, J. Electron. Packaging 111, 75 (1989).\nZ. Mei, J.W. Morris, Jr., M.C. Shine, and T.S.E. Summers, J. Electron. Mater. 20, 599 (1991).\nH.D. Solomon, Electronic Packaging-Materials and Processes, ed. J.A. Sartell (Metals Park, OH: ASM, 1985), p. 29.\nX.Q. Shi, H.L.J. Pang, W. Zhou, and Z.P. Wang, Int. J. Fatigue, 22, 217 (2000).\nF. Gabrielli and V. Lupinc, Proc. ICSMA 5 (Aachen: Pergamon Press, 1979), vol. 1, p. 485.\nH.K. Kim and J.C. Earthman, Acta Metall. Mater. 42, 679 (1994).\nW.H. Kim and C. Laird, Acta Met. 26, 777 (1978).\nW.H. Kim and C. Laird, Acta Met. 26, 789 (1978).\nV. Raman and T.C. Reiley, Metall. Trans. A 19A, 1533 (1988).\nV. Raman and T.C. Reiley, J. Mater. Sci. Lett. 6, 549 (1987).\nA.I. Attarwala, J.K. Tien, G.Y. Masada, and G. Dody, J. Electron. Packaging 114, 109 (1992).\nJ.K. Tien, B.C. Hentrix, and A.I. Attarwala, NEPCON West’90 Conf. Proc., (1990), vol. II, Cahners Exhibition (Illinois) p. 1353.\nH. Jiang, R. Hermann, and W.J. Plumbridge, J. Mater. Sci. 31, 6455 (1996).\nZ. Guo, A.F. Sprecher, and H. Conrad, 41st IEEE ECTC Conf. (New York: IEEE, 1991), p. 658.\nB.Z. Margolin and V.I. Kostylev, Fatigue Fract. Eng. Mater. Struct. 22, 967 (1999).\nN. Miura, T. Shimakawa, Y. Nakayama, and Y. Takahashi, Assessment Methodologies for Preventing Failure: Deterministic and Probabilistic Aspects and Weld Residual Stress (New York: ASME, 2000), vol. I, p. 111.\nT. Shimakawa, H. Ogawa, Y. Nakayama, N. Miura and Y. Takahashi, Assessment Methodologies for Preventing Failure: Deterministic and Probabilistic Aspects and Weld Residual Stress (New York: ASME, 2000), vol. I, p. 119.\nStress Intensity Factors Handbook, ed. Y. Murakami, S. Aoki, N. Hasebe, Y. Itoh, H. Miyata, N. Miyzaki, H. Terada, K. Tohgo, M. Toya, R. Yuuki (London: Pergamon Press, 1987).\nJ. Zhao, Y. Miyashita, and Y. Mutoh, Int. J. Fatigue 23, 723 (2001).\nD. Hardwick, C.M. Sellars, and W.J. McG. Tegart, J. Inst. Met. 90, 21 (1961–1962).\nD. McLean and M.H. Farmer, J. Inst. Met. 85, 41 (1956–1957).",{"VOID":1370},"10.1007\u002Fs11664-002-0161-0","2024-05-11T20:47:40.161+00:00","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs11664-002-0161-0",[1374,1391,1404],{"id":1375,"sortIndex":23,"researcher":22,"roles":1376,"affiliations":1377,"properties":1386},"a3b01b5b-6c2c-4240-a61b-1ccb125766a5",[195],[1378],{"id":1379,"sortIndex":23,"affiliation":1380,"properties":22},"1b1ca3dc-d46c-4d0f-a4a4-a3c2508283e4",{"id":1379,"createTime":22,"updateTime":22,"relativeEntities":1381,"slug":22,"properties":1382,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":1385,"statistic":22},[],{"title":1383},{"EN":1384},"Department of Mechanical Engineering, Nagaoka University of Technology, Nagaoka, Japan",[],{"title":1387,"gsAuthor":1389},{"VI":1388},"Chaosuan Kanchanomai",{"VOID":1390},"[\"O4WHKcYAAAAJ\"]",{"id":1392,"sortIndex":108,"researcher":22,"roles":1393,"affiliations":1394,"properties":1401},"52b457e5-a344-41d2-b1ed-cbf0747d9c7f",[195],[1395],{"id":1379,"sortIndex":23,"affiliation":1396,"properties":22},{"id":1379,"createTime":22,"updateTime":22,"relativeEntities":1397,"slug":22,"properties":1398,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":1400,"statistic":22},[],{"title":1399},{"EN":1384},[],{"title":1402},{"VI":1403},"Yukio Miyashita",{"id":1405,"sortIndex":107,"researcher":22,"roles":1406,"affiliations":1407,"properties":1414},"2f406c78-be63-48bd-b185-9f851961d0c3",[195],[1408],{"id":1379,"sortIndex":23,"affiliation":1409,"properties":22},{"id":1379,"createTime":22,"updateTime":22,"relativeEntities":1410,"slug":22,"properties":1411,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":1413,"statistic":22},[],{"title":1412},{"EN":1384},[],{"title":1415,"gsAuthor":1417},{"VI":1416},"Yoshiharu Mutoh",{"VOID":1418},"[\"Vix3NXgAAAAJ\"]",{"url":1372,"publisher":1420,"properties":1474},{"id":6,"createTime":7,"updateTime":8,"relativeEntities":1421,"slug":10,"properties":1422,"entityType":20,"verifyStatus":21,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":23,"subjectFields":1426,"manageAffiliations":1443,"indexDatabases":1454,"url":22,"thumbnailPath":22,"statistic":1469,"gsStatistic":22,"type":164,"analyzePriority":22},[],{"issn":1423,"title":1424,"eissn":1425},{"VOID":15},{"EN":17},{"VOID":13},[1427,1431,1435,1439],{"id":26,"createTime":22,"updateTime":22,"relativeEntities":1428,"label":1429,"description":1430,"parentId":22,"standard":22,"scholarHubFieldId":22},[],{"EN":29},{},{"id":32,"createTime":22,"updateTime":22,"relativeEntities":1432,"label":1433,"description":1434,"parentId":22,"standard":22,"scholarHubFieldId":22},[],{"EN":35},{},{"id":38,"createTime":22,"updateTime":22,"relativeEntities":1436,"label":1437,"description":1438,"parentId":22,"standard":22,"scholarHubFieldId":22},[],{"EN":41},{},{"id":44,"createTime":22,"updateTime":22,"relativeEntities":1440,"label":1441,"description":1442,"parentId":22,"standard":22,"scholarHubFieldId":22},[],{"EN":47},{},[1444,1449],{"id":51,"createTime":22,"updateTime":22,"relativeEntities":1445,"slug":22,"properties":1446,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":1448,"statistic":22},[],{"title":1447},{"EN":55},[57],{"id":59,"createTime":22,"updateTime":22,"relativeEntities":1450,"slug":22,"properties":1451,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":1453,"statistic":22},[],{"title":1452},{"EN":63},[],[1455,1462],{"id":67,"indexDatabase":1456,"url":80,"indexYears":22,"academicFieldIds":1461,"indexDatabaseRanking":22},{"id":69,"createTime":22,"updateTime":22,"relativeEntities":1457,"label":1458,"description":1459,"key":76,"publicationTags":1460,"standard":22},[],{"EN":72,"VI":72},{"EN":74,"VI":75},[78,79],[82,83,84],{"id":86,"indexDatabase":1463,"url":97,"indexYears":98,"academicFieldIds":1468,"indexDatabaseRanking":104},{"id":88,"createTime":22,"updateTime":22,"relativeEntities":1464,"label":1465,"description":1466,"key":94,"publicationTags":1467,"standard":22},[],{"EN":91,"VI":91},{"EN":91,"VI":93},[96],[100,101,102,103],{"impactFactor":23,"impactFactorByYear":1470,"i10Index":107,"i10IndexLast5Year":108,"totalPublication":109,"totalPublicationByYear":1471,"totalCitation":119,"totalCitationByYear":1472,"totalCitationPerPublication":23,"totalCitationPerPublicationByYear":1473,"hindexLast5Year":159,"hindex":159},{"2018":23,"2019":23,"2020":23},{"1972":111,"1973":112,"1974":113,"1975":114,"1976":115,"1977":113,"1978":116,"1979":117,"1980":118,"1981":117,"1982":119,"1983":120,"1984":119,"1985":121,"1986":119,"1987":122,"1988":123,"1989":124,"1990":125,"1991":126,"1992":127,"1993":128,"1994":129,"1995":130,"1996":131,"1997":132,"1998":133,"1999":134,"2000":135,"2001":136,"2002":137,"2003":138,"2004":139,"2005":138,"2006":140,"2007":141,"2008":142,"2009":143,"2010":144,"2011":144,"2012":145,"2013":146,"2014":147,"2015":148,"2016":149,"2017":150,"2018":151,"2019":152,"2020":153,"2021":154,"2022":154,"2023":155,"2024":156},{"2017":158,"2018":159,"2019":112},{"2017":161,"2018":162,"2019":163},{"pages":1475,"volume":1477},{"VOID":1476},"142-151",{"VOID":1478},"31",{"total":23,"publishYear":1480,"statisticByYear":1481},2002,{},"2002-02-01",[78,104],{"id":1485,"createTime":1486,"updateTime":1487,"relativeEntities":1488,"slug":1489,"properties":1490,"entityType":186,"verifyStatus":187,"verifyTime":1501,"verifyNote":189,"languages":22,"translateLanguages":22,"viewCount":23,"primaryUrl":1502,"fullTextUrl":22,"authors":1503,"publicationType":270,"publisherRelationship":1556,"citationCount":23,"citationInfo":1615,"publishDate":1617,"publishYear":1016,"citationAnalyzeStatus":335,"lastCitationAnalyze":1487,"indexDatabases":1618,"openAccess":22,"references":22,"isForceReanalyzing":338},"9249c2fc-0b49-463d-80e2-3851804f3d65","2024-02-02T04:09:51.166+00:00","2026-08-14T16:42:23.071+00:00",[],"Polyol-Synthesis-of-Nano-Bi2Te3",{"abstract":1491,"title":1493,"gsPaper":1495,"references":1497,"doi":1499},{"EN":1492},"In this work, a simple and easily scalable wet-chemical synthesis of nanoscale Bi2Te3 has been developed. Bi2Te3 nanoparticles were produced via a polyol method by reaction of Na2Te in solution with a selection of bismuth(III) salts in boiling ethylene glycol. Depending on the reaction temperature and time, particles with size ranging between 20 nm and 400 nm could be obtained in high yield. Phase-pure products could be obtained under refluxing conditions. We show the necessity of a certain reaction time or temperature for complete reaction of the compounds, and the dependence on the type of bismuth salt and the reactant quantity based on the tellurium contamination in the Bi2Te3 products. Nuclear magnetic resonance investigations suggest possible mechanisms for the formation of the Bi2Te3 particles. The composition, particle size, and morphology of the synthesized products were investigated by powder \tx-ray diffraction, energy-dispersive x-ray spectroscopy, transmission electron microscopy, and scanning electron microscopy. The resulting particles demonstrated high purity.",{"EN":1494},"Polyol Synthesis of Nano-Bi2Te3",{"VOID":1496},"[\"1726058411057801630\"]",{"VOID":1498},"K. Schierle-Arndt and W. Hermes, Chem. unserer Zeit 47, 92 (2013). doi:10.1002\u002Fciuz.201300588.\nW. Zeier, M. Panthöfer, J. Janek, and W. Tremel, Chem. unserer Zeit 45, 188 (2011). doi:10.1002\u002Fciuz.201100393.\nB. Poudel, Q. Hao, Y. Ma, Y.C. Lan, A. Minnich, B. Yu, X. Yan, D.Z. Wang, A. Muto, D. Vashaee, X.Y. Chen, J.M. Liu, M.S. Dresselhaus, G. Chen, and Z. Ren, Science 320, 634 (2008). doi:10.1126\u002Fscience.1156446.\nZ. Sun, S. Liufu, X. Chen, and L. Chen, J. Phys. Chem. C 115, 16167 (2011). doi:10.1021\u002Fjp203390y.\nN. Peranio, M. Winkler, D. Bessas, Z. Aabdin, J. König, H. Böttner, R. Hermann, and O. Eibl, J. Alloy. Compd. 521, 163 (2012). doi:10.1016\u002Fj.jallcom.2012.01.108.\nY. Zhang, G. Xu, P. Ren, Z. Wang, and C. Ge, J. Electron. Mater. 40, 835 (2011). doi:10.1007\u002Fs11664-011-1588-y.\nY. Liang, W. 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Chem. 693, 2463 (2008).\nK.H. Thiele, A. Steinicke, U. Dumichen, B. Neumuller, and Z. Anorg, Allg. Chem. 622, 231 (1996).\nU. Pelz (Dissertation, Albert-Ludwigs-Universität, 2013).\nH. Suzuki, M. Inouye, Chem. Lett., 403 (1986).\nH. Suzuki, T. Nakamura, Synthesis, 549, (1992).\nM. Bjoergvinsson and G.J. Schrobilgen, Inorg. Chem. 30, 2540 (1991). doi:10.1021\u002Fic00011a016.\nL. Tschugaeff and W. Chlopin, Ber. Dtsch. Chem. Ges. 47, 1269 (1914).\nC.A. Kraus and C.Y. Chiu, J. Am. Chem. Soc. 44, 1999 (1922).\nA. Cisar and J.D. Corbett, Inorg. Chem. 16, 632 (1977). doi:10.1021\u002Fic50169a027.\nY. Deng, C.-W. Nan, G.-D. Wei, L. Guo, and Y.-H. Lin, Chem. Phys. Lett. 374, 410 (2003). doi:10.1016\u002FS0009-2614(03)00783-8.\nY.L. Li, J. Jiang, G.J. Xu, F.H. Liu, Y. Li, and P. Cui, KEM 368–372, 541 (2008). doi:10.4028\u002Fwww.scientific.net\u002FKEM.368-372.541.",{"VOID":1500},"10.1007\u002Fs11664-013-2974-4","2024-05-16T20:48:24.193+00:00","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs11664-013-2974-4",[1504,1519,1534],{"id":1505,"sortIndex":23,"researcher":22,"roles":1506,"affiliations":1507,"properties":1516},"7e4ff00f-c3db-41e2-94c8-ef899dd0a9fa",[195],[1508],{"id":1509,"sortIndex":23,"affiliation":1510,"properties":22},"ca689362-ec85-47cb-bbde-781e911321e1",{"id":1509,"createTime":22,"updateTime":22,"relativeEntities":1511,"slug":22,"properties":1512,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":1515,"statistic":22},[],{"title":1513},{"VI":1514},"Institute of Inorganic and Analytic Chemistry, University of Freiburg, Freiburg, \tGermany",[],{"title":1517},{"VI":1518},"K. Kaspar",{"id":1520,"sortIndex":108,"researcher":22,"roles":1521,"affiliations":1522,"properties":1529},"2b9a5979-4a73-4ceb-be7d-c790891f7c7d",[195],[1523],{"id":1509,"sortIndex":23,"affiliation":1524,"properties":22},{"id":1509,"createTime":22,"updateTime":22,"relativeEntities":1525,"slug":22,"properties":1526,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":1528,"statistic":22},[],{"title":1527},{"VI":1514},[],{"title":1530,"gsAuthor":1532},{"VI":1531},"U. 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Here E2O3-stabilized δ-Bi2O3 has been obtained at low erbium concentrations. Rietveld refinement confirms an Ln-O bond length increase by a crystallographic volume variation from 166.51(1) to 168.54(1) Å3, as a consequence of enhanced ionic conductivity, which proved to be inversely proportional to the increase in Er3+ concentration. A reduction in the small cation (Er3+) concentration (x = 0.1) induces a grain boundary resistance decrease in the intermediate temperature (IT) range. A marked compressive stress tensor at high temperature was also observed, even at lower Er3+ cation concentrations, where the tetragonal structure takes place. The β-(Bi1−xErx)2O3 solid-state oxide ion conductor proved to have potential as a solid oxide electrolyte at ITs due to its conductivity and high compressive residuals stress (− 370 MPa).",{"EN":1629},"Enhanced Ionic Transport and Compressive Residual Stress in Er-Doped Bi2O3 with Lower Er3+ Concentrations",{"VOID":1631},"[\"7535672537653859855\"]",{"VOID":1633},"M.J. López-Robledo, M.A. Laguna-Bercero, A. Larrea, and V.M. Orera, J. Power. Sources 378, 184 (2018).\nG.Y. Meng, C.S. Chen, X. Han, P.H. Yang, and D.K. Peng, Solid. State. Ion. 28, 533 (1988).\nN.M. Sammes, G.A. Tompsett, H. Nafe, and F. Aldinger, J. Eur. Ceram. Soc. 19, 1801 (1999).\nS. Yilmaz, O. Turkoglu, and I. Belenli, Mater. Chem. Phys. 112, 472 (2008).\nD.S. Aidhy, S.B. Sinnott, E.D. Wachsman, and S.R. Phillpot, Ionics 16, 297 (2010).\nT. Takahashi, H. Iwahara, and Y. Nagai, J. Appl. Electrochem. 2, 97 (1972).\nH.A. Harwig and A.G. Gerards, J. Solid State Chem. 26, 265 (1978).\nD.S. Aidhy, S.B. Sinnott, E.D. 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Mater. 14, 500 (2015).",{"VOID":1635},"10.1007\u002Fs11664-018-6441-0","2024-05-16T10:06:32.009+00:00","https:\u002F\u002Flink.springer.com\u002Farticle\u002F10.1007\u002Fs11664-018-6441-0",[1639,1656,1679,1701,1714,1727,1740,1753],{"id":1640,"sortIndex":23,"researcher":22,"roles":1641,"affiliations":1642,"properties":1651},"8d07ad2a-84b5-4eeb-9823-1e6f23cf8764",[195],[1643],{"id":1644,"sortIndex":23,"affiliation":1645,"properties":22},"0e0e1039-5b0a-4090-a047-de958ad50876",{"id":1644,"createTime":22,"updateTime":22,"relativeEntities":1646,"slug":22,"properties":1647,"entityType":22,"verifyStatus":22,"verifyTime":22,"verifyNote":22,"languages":22,"translateLanguages":22,"viewCount":22,"url":22,"parentIds":1650,"statistic":22},[],{"title":1648},{"VI":1649},"Department of Physics of Materials, Centro de Investigación en Materiales Avanzados S.C. (CIMAV), Cd. de Chihuahua, Mexico",[],{"title":1652,"gsAuthor":1654},{"VI":1653},"A. 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The trap density value obtained at voltage of 14 V when the device luminesces is 2.40 × 1015 cm−3. The rates of the capturing process (trapping) Rn and de-trapping, \n                \n                  \n                \n                $$R_{n}^{\\prime }$$\n                \n               of the charge carriers on the localized state of the double-carrier device are estimated. There are two significant regions observed in the plot, Rn > \n                \n                  \n                \n                $$R_{n}^{\\prime }$$\n                \n               and Rn \u003C \n                \n                  \n                \n                $$R_{n}^{\\prime }$$\n                \n              , and the intersection point of Rn with that of \n                \n                  \n                \n                $$R_{n}^{\\prime }$$\n                \n               indicates the voltage at which the device luminesces, known as the turn-on voltage of the device. Simulations are then performed by directly increasing the device trap density by various ratios to that of OLED A. The simulation has indicated that trap density has a strong influence on the Rn and \n                \n                  \n                \n                $$R_{n}^{\\prime }$$\n                \n               parameters. In order to verify the finding of the simulation, another double-carrier device (OLED B) with a hole transport layer (HTL) of poly(N,N′-bis-4 butyl phenyl-N,N′-bisphenyl) benzidine (poly-TPD) of 40-nm thickness is fabricated by adding the HTL layer to the existing structure of OLED A. The photoelectric characteristics analysis is performed on both types of OLED A and B. In this work, OLED B proved to have a higher value of trap density luminescence at a much lower turn-on voltage, as has been predicted by the simulation results due to the influence of trap density on the parameters Rn and \n                \n                  \n                \n                $$R_{n}^{\\prime }$$\n                \n               of the devices.",{"EN":1843},"The Effect of Trap Density on the Trapping and De-trapping Processes in Determining the Turn-On Voltage of Double-Carrier Organic Light-Emitting Devices (OLEDs)",{"VOID":1845},"[\"18376810121656867533\"]",{"VOID":1847},"C.W. Tang, and S.A. VanSlyke, Appl. Phys. Lett. 51, 12 (1987).\nK.A. Higginson, X.-M. Zhang, and F. Papadimitrakopoulos, Chem. Mater. 10, 4 (1998).\nR. Kepler, P. Beeson, S. Jacobs, R. Anderson, M. Sinclair, V. Valencia, and P. Cahill, Appl. Phys. Lett. 66, 26 (1995).\nJ. Anderson, E. McDonald, P. Lee, M. Anderson, E. Ritchie, H. Hall, T. Hopkins, E.A. Mash, J. Wang, and A. Padias, J. Am. Chem. 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