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It is determined that (a) emission from guest DCJTB in a host transport material results primarily from separate trapping of holes and electrons, rather than the more commonly proposed Forster transfer mechanism, (b) DCJTB is a more efficient hole than electron trap, and (c) the lifetime of a doped device is longer when TPD is used as the host material.",{"EN":391},"Dopant emission mechanism and the effects of host materials on the behavior of doped organic light-emitting diodes",{"EN":393},"Light-emitting diodes,Charge carrier lifetime,Electroluminescence",{"VOID":395},"hamada, 1995, influence of the emission site on the running durability of organic electroluminscent devices, Jpn J Appl Phys (Part 2) Lett, 34, 824l, 10.1143\u002FJJAP.34.L824\n10.1016\u002FS0379-6779(97)04014-9\n10.1109\u002F2944.669464\n10.1063\u002F1.118664\n10.1063\u002F1.117151\n10.1063\u002F1.368624\n10.1109\u002F2944.669481\n10.1063\u002F1.124506\n10.1109\u002F16.944206\n10.1063\u002F1.1362371\n10.1063\u002F1.98799\n10.1063\u002F1.115965\n10.1063\u002F1.1341226\n10.1109\u002F2944.669454\n10.1109\u002F2944.669481\n10.1063\u002F1.1326491\n10.1143\u002FJJAP.38.5274\nburrows, 1997, achieving full-color lightweight, flat-panel displays, IEEE Transactions on Electron Devices, 44, 1188, 10.1109\u002F16.605453\n10.1063\u002F1.1410319\n10.1063\u002F1.1330766\n10.1063\u002F1.343409\n10.1063\u002F1.1371267\naziz, 1999, degradation mechanism of small molecule-based organic light-emitting devices, Science 283, 19, 1900",{"VOID":397},"10.1109\u002FTED.2002.802620","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1027834\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1027834",[401,416,429,442],{"id":402,"sortIndex":93,"researcher":24,"roles":403,"affiliations":404,"properties":413},"0339a7dc-22b8-4f80-8bbb-96de214dd245",[132],[405],{"id":406,"sortIndex":93,"affiliation":407,"properties":24},"9fcb3f5c-5f26-4770-b863-9c0f185d603f",{"id":406,"createTime":24,"updateTime":24,"relativeEntities":408,"slug":24,"properties":409,"entityType":24,"verifyStatus":24,"verifyTime":24,"verifyNote":24,"languages":24,"translateLanguages":24,"viewCount":24,"url":24,"parentIds":412,"statistic":24},[],{"title":410},{"VI":411},"Center for Display Research, Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China",[],{"title":414},{"VI":415},"Chengfeng Qiu",{"id":417,"sortIndex":25,"researcher":24,"roles":418,"affiliations":419,"properties":426},"b6cfb21b-a3b6-4d67-b676-d487bcbd8b70",[132],[420],{"id":406,"sortIndex":93,"affiliation":421,"properties":24},{"id":406,"createTime":24,"updateTime":24,"relativeEntities":422,"slug":24,"properties":423,"entityType":24,"verifyStatus":24,"verifyTime":24,"verifyNote":24,"languages":24,"translateLanguages":24,"viewCount":24,"url":24,"parentIds":425,"statistic":24},[],{"title":424},{"VI":411},[],{"title":427},{"VI":428},"Haiying Chen",{"id":430,"sortIndex":160,"researcher":24,"roles":431,"affiliations":432,"properties":439},"7c4f497a-02f6-424a-a015-94390559fc36",[132],[433],{"id":406,"sortIndex":93,"affiliation":434,"properties":24},{"id":406,"createTime":24,"updateTime":24,"relativeEntities":435,"slug":24,"properties":436,"entityType":24,"verifyStatus":24,"verifyTime":24,"verifyNote":24,"languages":24,"translateLanguages":24,"viewCount":24,"url":24,"parentIds":438,"statistic":24},[],{"title":437},{"VI":411},[],{"title":440},{"VI":441},"Man Wong",{"id":443,"sortIndex":174,"researcher":24,"roles":444,"affiliations":445,"properties":452},"2ac9b53d-9980-4118-8478-ac6f153680bb",[132],[446],{"id":406,"sortIndex":93,"affiliation":447,"properties":24},{"id":406,"createTime":24,"updateTime":24,"relativeEntities":448,"slug":24,"properties":449,"entityType":24,"verifyStatus":24,"verifyTime":24,"verifyNote":24,"languages":24,"translateLanguages":24,"viewCount":24,"url":24,"parentIds":451,"statistic":24},[],{"title":450},{"VI":411},[],{"title":453},{"VI":454},"H.S. 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The proposal has many attractive advantages in the display application and reliable fabrication, because the structure needs neither additional area for the JFET nor additional process except ion implantation. The experimental results of the emitters show excellent controllability and stability in the emission current.",{"EN":519},"A monolithic field emitter array with a JFET",{"EN":521},"Silicon,Vacuum microelectronics,Arrays,Electron emission,JFETs,Stability",{"VOID":523},"10.1109\u002F6.666960\n10.1063\u002F1.322600\n10.1143\u002FJJAP.35.L84\nkobori, 1992, Field emission cathode\nting, 1991, field-effect controlled vacuum field-emission cathode, Tech Dig 4th Int Vacuum Microelectronics Conf, 200\n10.1143\u002FJJAP.35.L861\ngray, 2000, Method of production of FET regulatable field emitter device\ngray, 1994, Regulatable field emitter device and method of production thereof\ngreene, 1985, vacuum integrated circuits, 1985 International Electron Devices Meeting, 172, 10.1109\u002FIEDM.1985.190922\n10.1116\u002F1.588340\n10.1063\u002F1.1656810",{"VOID":525},"10.1109\u002FTED.2002.802628","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1027860\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1027860",[529,544,559,572],{"id":530,"sortIndex":93,"researcher":24,"roles":531,"affiliations":532,"properties":541},"73381b56-482e-4c1f-a84e-20ebffc6314c",[132],[533],{"id":534,"sortIndex":93,"affiliation":535,"properties":24},"6dc8959f-b8ae-4ed9-a33d-9f0a206fc707",{"id":534,"createTime":24,"updateTime":24,"relativeEntities":536,"slug":24,"properties":537,"entityType":24,"verifyStatus":24,"verifyTime":24,"verifyNote":24,"languages":24,"translateLanguages":24,"viewCount":24,"url":24,"parentIds":540,"statistic":24},[],{"title":538},{"VI":539},"Department of Electrical and Electronic Engineering, Faculty of Engineering, Hachinohe Institute of Technology, Hachinohe, Japan",[],{"title":542},{"VI":543},"H. 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Recent progress in SiC power rectifiers has resulted in the demonstration of high-voltage PiN and Schottky barrier diodes (SBDs). With both technologies maturing, power electronics engineers will soon face the task of selecting between these two devices. Until recently, the choice was simple, since silicon SBDs are only available for relatively low voltage applications. The choice is not as clear when considering SiC diodes, and guidelines for determining the proper application of each are needed. 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It is shown that an easily integrable innovative channel engineering scheme in the form of single pocket structures can be used in the standard logic CMOS process to significantly improve the device analog performance of the deep submicron devices.",{"EN":1465},"Channel engineering for analog device design in deep submicron CMOS technology for system on chip applications",{"EN":1467},"CMOS integrated circuits,Integrated circuit design,Mixed analog-digital integrated circuits,Very-large-scale integration,Integrated circuit fabrication",{"VOID":1469},"10.1109\u002F16.563364\n10.1109\u002FVLSIT.2001.934960\n10.1016\u002FS0167-9317(97)00167-6\n10.1109\u002FIEDM.1998.746503\n10.1109\u002F16.777157\n10.1109\u002F55.720194\n10.1109\u002FIEDM.1992.307426\ntaylor, 1978, subthreshold conduction in mosfet's, IEEE Transactions on Electron Devices, 25, 337, 10.1109\u002FT-ED.1978.19079\ntaur, 1998, Fundamentals of Modern VLSI Devices\n10.1109\u002F16.557730\nohguro, 1997, 0.18 \u003Cformula>\u003Ctex>$\\mu\\hbox{m}$\u003C\u002Ftex>\u003C\u002Fformula> low voltage\u002Flow power rf cmos with zero \u003Cformula>\u003Ctex>$v_{\\rm th}$ \u003C\u002Ftex>\u003C\u002Fformula> analog mosfets made by undoped epitaxial channel technique, IEDM Tech Dig, 837, 10.1109\u002FIEDM.1997.650511\n10.1016\u002FS0038-1101(97)00007-5\n10.1109\u002FVLSIT.2000.852808\n10.1109\u002FVLSIT.2000.852805\ncheng, 1999, channel engineering for high speed sub-1.0 v power supply deep sub-micron cmos, VLSI Tech Dig, 79\n10.1109\u002FVLSIT.1999.799386\n10.1109\u002FIEDM.2000.904355\n10.1109\u002FISSCC.1999.759110\nponomarev, 1999, a 0.13 \u003Cformula> \u003Ctex>$\\mu\\hbox{m}$\u003C\u002Ftex>\u003C\u002Fformula> cmos technology for low-voltage analogue applications, Conf Proc ESSDERC, 180\n10.1109\u002F16.543021\nbiesemans, 1994, analytical calculations of a figure of merit for novel mosfet architectures for sub 0.25 \u003Cformula>\u003Ctex>$\\mu\\hbox{m}$\u003C\u002Ftex>\u003C\u002Fformula> range, NUPAD, 11\n10.1109\u002F4.346",{"VOID":1471},"10.1109\u002FTED.2002.801435","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1027837\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1027837",[1475,1499,1514],{"id":1476,"sortIndex":93,"researcher":24,"roles":1477,"affiliations":1478,"properties":1496},"0e3f160f-f127-4932-ab6b-2d378f2ded66",[132],[1479,1487],{"id":1480,"sortIndex":93,"affiliation":1481,"properties":24},"515f33a0-b1a0-4d1b-873d-20fe94c8f6ef",{"id":1480,"createTime":24,"updateTime":24,"relativeEntities":1482,"slug":24,"properties":1483,"entityType":24,"verifyStatus":24,"verifyTime":24,"verifyNote":24,"languages":24,"translateLanguages":24,"viewCount":24,"url":24,"parentIds":1486,"statistic":24},[],{"title":1484},{"VI":1485},"Intel Corporation, Hillsboro, OR, USA",[],{"id":1488,"sortIndex":25,"affiliation":1489,"properties":1495},"a69dba6c-f7df-4e95-8cf9-c72e10332453",{"id":1488,"createTime":24,"updateTime":24,"relativeEntities":1490,"slug":24,"properties":1491,"entityType":24,"verifyStatus":24,"verifyTime":24,"verifyNote":24,"languages":24,"translateLanguages":24,"viewCount":24,"url":24,"parentIds":1494,"statistic":24},[],{"title":1492},{"VI":1493},"Department of Electrical Engineering, University of California, Los Angeles, CA, USA",[],{},{"title":1497},{"VI":1498},"H.V. 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