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other provinces and regions in Vietnam and other country.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Address\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Headquarters of Can Tho Journal of Medicine and Pharmacy, located Scientific Research and International Cooperation Office: 179 Nguyen Van Cu Street, An Khanh Ward, Ninh Kieu District, Can Tho City, Vietnam.\u003C\u002Fspan>\u003C\u002Fp>","\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Ngày 16\u002F7\u002F2015, Tạp chí Y Dược học Cần Thơ được cấp chỉ số quốc tế: ISSN 2354-1210.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Từ tháng 4\u002F2016, Tạp chí đã được Hội đồng Giáo sư ngành Y đưa vào danh sách các tạp chí khoa học Y học được tính điểm công trình 0-0,5 điểm cho một bài báo đăng.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Năm 2020 Tạp chí Y Dược học Cần Thơ đã được phê duyệt vào danh mục của các Hội đồng Giáo sư ngành Dược học được tính điểm công trình 0-0,5 điểm cho một bài báo đăng.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí Y Dược học Cần Thơ ra 12 số\u002Fnăm, 180-200 trang\u002Fsố.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Từ tháng 12\u002F2022 Tạp chí Y Dược học Cần Thơ là thành viên của hệ thống Crossref và từ tháng 01\u002F2023 tạp chí thực hiện bình duyệt online kín 2 chiều nhằm tăng tính minh bạch, tin cậy của các công trình nghiên cứu khoa học và đảm bảo tốt nhất chất lượng khoa học của bài viết.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tôn chỉ, mục đích và phạm vi của tạp chí\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tôn chỉ và mục đích hoạt động của tạp chí: xuất bản nhằm mục đích phổ biến kết quả từ các đề tài nghiên cứu khoa học; giao lưu trao đổi khoa học, chia sẻ kinh nghiệm, học tập, đồng thời cập nhật thông tin khoa học mới trong các lĩnh vực y, sinh, dược học trong và ngoài nước.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Phạm vi của tạp chí: Tạp chí xuất bản được chia thành 3 chuyên mục: (i) Bài báo nghiên cứu khoa học là kết quả công trình nghiên cứu khoa học có giá trị đã được triển khai nghiên cứu, (ii) Bài tổng quan y, sinh, dược học: phục vụ mục tiêu đào tạo liên tục trong lĩnh vực y, sinh, dược học; nhằm hệ thống hóa những kiến thức kinh điển và hiện đại; (iii) Thông tin cập nhật kiến thức mới về y, sinh, dược học trong nước và trên thế giới.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Chính sách truy cập mở\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí Y Dược học Cần Thơ áp dụng chính sách truy cập mở đối với các bài báo đã xuất bản đến với độc giả, nhằm mở rộng cơ hội tiếp cận các kết quả nghiên cứu chất lượng cao và tăng cường trao đổi kiến thức. Tạp chí đăng tải trực tuyến (miễn phí) toàn văn các bài báo được công bố trên website của Tạp chí (https:\u002F\u002Ftapchi.ctump.edu.vn).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Đạo đức xuất bản\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí Y Dược học Cần Thơ cam kết tuân thủ đạo đức xuất bản phù hợp với các hướng dẫn và tiêu chuẩn của the Committee on Publication Ethics (COPE), tuân thủ các nguyên tắc của COPE’s Core Practices, Best Practices Guidelines for Journal Editors và Guidelines on Good Publication Practices.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Bản thảo bài báo chỉ được chấp nhận khi được tác giả chịu trách nhiệm chính cam kết các nội dung sau: Các nội dung của bản thảo chưa được đăng tải toàn bộ hoặc một phần ở các tạp chí khác; Tất cả các tác giả đều có đóng góp một cách đáng kể vào quá trình nghiên cứu hoặc chuẩn bị bản thảo và cùng chịu trách nhiệm về các nội dung của bản thảo; Tuân thủ các biện pháp đảm bảo đạo đức nghiên cứu (ví dụ thỏa thuận đồng ý tham gia nghiên cứu).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Cam kết bảo mật\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí cam kết thực hiện và tuân thủ các quy định của luật và các văn bản hướng dẫn liên quan đến bảo mật thông tin cá nhân trên không gian mạng. Các thông tin mà người dùng (tác giả, độc giả, biên tập viên, người phản biện) nhập vào các biểu mẫu trên Hệ thống Quản lý xuất bản trực tuyến của tạp chí chỉ được sử dụng vào các mục đích đã được tuyên bố rõ ràng và sẽ không được cung cấp cho bất kỳ bên thứ ba nào khác, hay dùng vào bất kỳ mục đích nào khác.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Phí gửi bài\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Lệ phí gửi đăng bài: 1.000.000đ\u002Fbài báo\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Lệ phí gửi đăng nhanh: 1.500.000đ\u002Fbài báo\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Đối với tác giả là cán bộ viên chức thuộc Trường Đại học Y Dược Cần Thơ thì được hỗ trợ 50% lệ phí gửi đăng bài.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Đối với sinh viên thực hiện đề tài nghiên cứu khoa học cấp trường được hỗ trợ 100% lệ phí đăng bài ( Tác giả gửi đính kèm “ Quyết định về việc giao tổ chức thực hiện đề tài nghiên cứu khoa học cấp Trường của sinh viên”).\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Hình thức nộp lệ phí:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">1. Tiền mặt:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Nộp trực tiếp tại Phòng Tài chính - Kế toán, Trường Đại học Y Dược Cần Thơ, số 179 Nguyễn Văn Cừ, P. An Khánh, Q. Ninh Kiều, thành phố Cần Thơ.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">2. Chuyển khoản:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tên Tài khoản: Trường ĐHYD Cần Thơ, Số TK: 0111000115668, tại ngân hàng Vietcombank chi nhánh Cần Thơ.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Thời gian: Áp dụng từ ngày 01\u002F02\u002F2023.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">* Phí gửi bài không được hoàn trả khi bài viết bị từ chối hoặc tác giả xin rút bài viết.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Quy trình phản biện bài báo\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tạp chí Y Dược học Cần Thơ thực hiện quy trình phản biện kín hai chiều nghiêm ngặt. Danh tính của những người phản biện không được tiết lộ cho các tác giả và ngược lại. Quy trình thẩm định bài báo đăng gồm các bước sau:\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tiếp nhận bản thảo\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Tác giả liên hệ gửi bản thảo đến Tạp chí qua hệ thống trực tuyến tại website: https:\u002F\u002Ftapchi.ctump.edu.vn. Hướng dẫn về cách đăng ký, gửi bài và chuẩn bị bản thảo được cung cấp trên website của Tạp chí.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Sàng lọc sơ bộ\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Sau khi Tòa soạn nhận được bài báo của tác giả, Ban Thư ký sẽ tiến hành kiểm tra sơ bộ bài báo (các yêu cầu về nội dung và hình thức). Những bài báo không đúng quy cách hoặc có nội dung không phù hợp hoặc vi phạm bản quyền sẽ bị từ chối (Ban Thư ký thông báo phản hồi đến tác giả trong vòng 1 tuần). Những bài báo đủ điều kiện, được Ban Thư ký tòa soạn chuyển đến Ban Biên tập có cùng chuyên môn với nội dung bài báo để đề xuất người phản biện. Thời gian kể từ khi Ban Biên tập nhận bài báo đến khi đề xuất người phản biện bài báo chậm nhất là 5 ngày.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Vòng phản biện\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">1. Ban Thư ký gửi bài và yêu cầu phản biện đến 02 phản biện độc lập.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">2. Các phản biện gởi nhận xét cho Ban Thư ký. Thời gian từ khi gửi bài cho phản biện đến khi nhận ý kiến của phản biện tối đa là 20 ngày.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Xử ký kết quả phản biện\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">1. Nếu ý kiến đồng ý cho đăng và không cần chỉnh sửa, Ban Thư ký tiếp tục đăng bài theo qui trình.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">2. Nếu ý kiến đồng ý đăng và cần chỉnh sửa, Ban Thư ký sẽ thông tin đến tác giả chỉnh sửa theo yêu cầu của người phản biện. Thời gian chỉnh sửa và gửi lại kéo dài không quá 2 tuần, từ khi tác giả bài báo nhận được thông tin (Quá trình này có thể lặp lại tối đa 2 lần\u002F1 bài báo). Khi có sự thống nhất, đồng ý của người phản biện; bài báo được tiếp tục đăng theo qui trình.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">3. Những bài báo có chất lượng không đạt yêu cầu, cả 2 phản biện không đồng ý cho đăng sẽ bị Tòa soạn từ chối đăng.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">Xuất bản\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">1. Ban Thư ký tổng hợp các bản thảo đã được tác giả hoàn thiện sau thẩm định trình Ban Biên tập xem xét, Tổng Biên tập phê duyệt, quyết định bài đăng theo các tiêu chí: sự phù hợp nội dung với tôn chỉ và mục đích, thể loại bài viết (ưu tiên các bài có bài có nghiên cứu chuyên sâu, hàm lượng khoa học cao), đóng góp mới bài báo, bài báo được ưu tiên đăng trong số gần nhất của Tạp chí theo thứ tự: tính thời sự, chất lượng bài báo và thời gian gửi bài.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">2. Ban Biên tập và Ban Thư ký biên tập bản thảo, chế bản, đọc rà soát lỗi. Thời gian hoàn thành từ 10-15 ngày.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">3. Ban Thư ký có trách nhiệm thông báo cho tác giả bài báo (bằng e-mail) về tình hình phê duyệt bài báo, thời gian, số kỳ, tập xuất bản bài báo theo qui định.\u003C\u002Fspan>\u003C\u002Fp>\u003Cp>\u003Cbr>\u003C\u002Fp>\u003Cp>\u003Cspan style=\"color: rgb(0, 0, 0);\">4. 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The main objectives of the journal include: providing an intellectual platform for Vietnamese and international scholars; promoting interdisciplinary studies in social sciences and humanities; becoming the leading journal in social sciences and humanities in Vietnam; being indexed by worldwide databases and having academic recognition internationally in the near future.\\nThe journal is currently indexed by Google Scholar, WorldCat, Open Archives, Cosmos Impact Factor, Advanced Sciences Index, Scientific Indexing Services, CrossRef, EBSCO Information Services and Vietnam National University’s digital archive.\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Journal of Social Sciences and Humanities-Vietnam\"},{\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"ISSN 2354-1172, email: tapchikhxhnv@gmail.com, tckhxhnv@vnu.edu.vn\"},{\"insert\":\"\\n\"}]}","{\"ops\":[{\"insert\":\"Được thành lập ngày 31\u002F8\u002F2015 (giấy phép hoạt động số 155\u002FGP-BVHTT ngày 11 tháng 5 năm 2015 của Bộ Thông tin và Truyền thông, mã số tiêu chuẩn quốc tế ISSN 2354-1172), Tạp chí Khoa học Xã hội và Nhân văn (Journal of Social Sciences and Humanities) là ấn phẩm khoa học chính thức, duy nhất của Trường Đại học Khoa học Xã hội và Nhân văn, ĐHQG Hà Nội, phát triển và kế thừa Chuyên san Khoa học Xã hội và Nhân văn, Tạp chí Khoa học, ĐHQG Hà Nội.\\nTạp chí xuất bản định kỳ (04 số tiếng Việt\u002Fnăm và 02 số tiếng Anh\u002Fnăm), có nhiệm vụ \"},{\"attributes\":{\"italic\":true},\"insert\":\"công bố, giới thiệu các công trình nghiên cứu khoa học khoa học xã hội và nhân văn của các tác giả là các nhà khoa học trong và ngoài nước, phục vụ giảng dạy, học tập và nghiên cứu khoa học\"},{\"insert\":\". 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Tạp chí công bố các công trình nghiên cứu liên quan đến mô hình bệnh tật, các phương pháp chẩn đoán, điều trị, dự phòng và phục hồi chức năng các bệnh thuộc chuyên ngành da liễu. Ngoài ra, tạp chí còn đăng tải các bài tổng quan, cập nhật thông tin, kiến thức, hướng dẫn chẩn đoán, điều trị trong chuyên ngành da liễu trong nước và quốc tế; đăng tải các bài ca lâm sàng đặc biệt trong chuyên ngành da liễu.\\nTạp chí Da liễu học Việt Nam được biết tới là một tạp chí chuyên ngành có uy tín trong lĩnh vực da liễu. Các bài báo về nghiên cứu khoa học đăng trong Tạp chí được bình duyệt một cách nghiêm ngặt bởi ít nhất 2 chuyên gia. Hội đồng biên tập tạp chí bao gồm các nhà khoa học có uy tín (Giáo sư, Phó Giáo sư, Tiến sĩ, Bác sĩ…) trong chuyên ngành da liễu nhằm đảm bảo chất lượng và tính khách quan, khoa học cho các bài viết đăng trên Tạp chí.\\n\"}]}",{"EN":556,"VI":557},"Vietnamese Journal of Dermatology and Venereology","Tạp chí Da liễu học Việt Nam","Admin Import",[],[],[],"https:\u002F\u002Fvjdv.vn\u002Findex.php\u002Fvjdv","\u002Fapi\u002Fpublic\u002Ffile\u002Fpublisher\u002F6ec01bd0-15c0-469a-86ac-41339076ae0a\u002F3cbc81720e58429dc7b1c4d7ab1935ca.jpg",{"impactFactor":36,"impactFactorByYear":565,"i10Index":36,"i10IndexLast5Year":36,"totalPublication":566,"totalPublicationByYear":567,"totalCitation":116,"totalCitationByYear":570,"totalCitationPerPublication":109,"totalCitationPerPublicationByYear":571,"hindexLast5Year":115,"hindex":115},{"2023":38,"2024":230},182,{"2022":568,"2023":45,"2024":569},69,56,{"2022":52,"2023":115},{"2022":40,"2023":229},{"id":573,"createTime":574,"updateTime":575,"relativeEntities":576,"slug":577,"properties":578,"entityType":24,"verifyStatus":25,"verifyTime":26,"verifyNote":27,"syncStatus":28,"languages":587,"translateLanguages":26,"viewCount":283,"subjectFields":588,"manageAffiliations":589,"indexDatabases":647,"url":648,"thumbnailPath":649,"statistic":650,"gsStatistic":26,"type":26,"analyzePriority":26},"19221551-7519-47ff-a892-331d1139c64b","2023-09-12T07:03:05.744+00:00","2026-01-24T20:54:40.144+00:00",[],"T%E1%BA%A1p-ch%C3%AD-Khoa-h%E1%BB%8Dc-S%E1%BB%A9c-kho%E1%BA%BB-%C4%90%E1%BA%A1i-h%E1%BB%8Dc-Qu%E1%BB%91c-gia-Th%C3%A0nh-ph%E1%BB%91-H%E1%BB%93-Ch%C3%AD-Minh",{"country":579,"issn":580,"introduce":582,"title":584},{"VOID":15},{"VOID":581},"27349446",{"EN":583},"{\"ops\":[{\"attributes\":{\"bold\":true},\"insert\":\"1. History\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"Science and Technology Development Journal\"},{\"insert\":\" (STDJ) (ISSN 2734-9446), Vietnam National University - Ho Chi Minh City (VNU-HCM) was established in 1997. And the first issue was published in January 1998 with ISSN 1859-0128. Since then, STDJ has become the most important scientific forum of scientists from VNU-HCM as well as other universities. The magazine has undergone 20 years of development and has become a bridge for scientific exchanges, as well as enriching reference materials for the faculty, doctoral students, students of VNU-HCM in particular and other universities, institutes...\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\"Science and Technology Development Journal - Health Sciences (STDJ-HS) is a subjournal of Science and Technology Development Journal since 2020.\"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"insert\":\" \"},{\"attributes\":{\"align\":\"justify\"},\"insert\":\"\\n\"},{\"attributes\":{\"bold\":true},\"insert\":\"2. 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Proceedings (Cat. No.02CH37289)",[],[],[],{"meta":669,"data":671},{"total":670},"279",[672,813,994,1092,1204,1287,1380,1457,1537,1639],{"id":673,"createTime":674,"updateTime":675,"relativeEntities":676,"slug":677,"properties":678,"entityType":689,"verifyStatus":25,"verifyTime":690,"verifyNote":691,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"primaryUrl":692,"fullTextUrl":693,"authors":694,"publicationType":755,"publisherRelationship":756,"citationCount":353,"citationInfo":769,"publishDate":26,"publishYear":26,"citationAnalyzeStatus":28,"lastCitationAnalyze":675,"indexDatabases":26,"openAccess":26,"references":772,"isForceReanalyzing":812},"1266875b-ff50-47fc-801c-c8085f1b3c52","2023-12-20T11:19:13.605+00:00","2024-12-30T15:41:01.123+00:00",[],"A-1-spl-phi-3W-grid-connection-PV-power-inverter-with-partial-active-power-filter",{"keywords":679,"abstract":681,"title":683,"doi":685,"gsPaper":687},{"EN":680},"Inverters,Active filters,Power harmonic filters,Reactive power,Power system harmonics,Switches,Power generation,Photovoltaic systems,Solar power generation,Phase detection",{"EN":682},"This paper presents a single-phase three-wire (1\u002Fspl phi\u002F3W) grid-connection photovoltaic (PV) power inverter with a feature of a partial active power filter (PAPF), which can not only deal with PV power but can filter current harmonics and improve power factor. Once the processed power exceeds the switch ratings, the inverter can reduce its output reactive power and harmonic power, while still can supply the maximum real power generated by the PV arrays. In derivation of control laws, a limit circle is defined to confine the output power of the inverter. To determine the power that the inverter can process, a criterion is proposed to find reactive power, which can avoid complex detections of phase angle and magnitude of the fundamental component of a nonlinear load current. Simulation results and experimental measurements have verified the proposed algorithm and the feasibility of the inverter.",{"EN":684},"A 1\u002Fspl phi\u002F3W grid-connection PV power inverter with partial active power filter",{"VOID":686},"10.1109\u002FPSEC.2002.1022390",{"VOID":688},"7209831012308774721","PUBLICATION","2024-04-24T11:38:05.547+00:00","Auto Verify","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1022390\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1022390",[695,716,729,742],{"id":696,"sortIndex":36,"researcher":26,"roles":697,"affiliations":699,"properties":711},"87329adc-0ea8-412a-8b45-a23ffccec077",[698],"AUTHOR",[700],{"id":701,"sortIndex":36,"affiliation":702,"properties":26},"507dedd8-1797-4a91-8d8b-fcb5201504e4",{"id":703,"createTime":704,"updateTime":705,"relativeEntities":706,"slug":707,"properties":708,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"94d74698-65e5-4095-89d0-790170e7f2cf","2023-12-24T19:21:38.188+00:00","2024-12-05T22:38:21.244+00:00",[],"Department-of-Electrical-Engineering-National-Chung-Cheng-University-Chiayi-Taiwan",{"title":709},{"VI":710},"Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan",{"title":712,"gsAuthor":714},{"VI":713},"T.-F. 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The mission of these developments is to nationally revitalize courses in industrially and strategically vital fields of electric drives (and power electronics). This is accomplished by making these courses appealing to students (undergraduate enrollments have significantly increased subsequent to adopting these approaches) where they receive a first-rate education in just one undergraduate course in a way that ensures a seamless continuity to advanced courses. The laboratory is based on a dSPACE development board and several custom designed power converter boards and electric motors, working on a 42 V DC-bus voltage system.",{"EN":825},"An instructional laboratory for the revival of electric machines and drives courses",{"VOID":827},"10.1109\u002FPSEC.2002.1022495",{"VOID":829},"[\"16192723600055658126\"]","2024-04-29T17:29:37.589+00:00","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1022495\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1022495",[834,851,866,878,890,902,914,931],{"id":835,"sortIndex":114,"researcher":26,"roles":836,"affiliations":837,"properties":848},"9ab54d0c-4932-4877-be07-b89423a21af5",[698],[838],{"id":26,"sortIndex":36,"affiliation":839,"properties":26},{"id":840,"createTime":841,"updateTime":842,"relativeEntities":843,"slug":844,"properties":845,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"18ac2697-afe3-45a3-8944-619832508b62","2024-01-09T12:03:15.222+00:00","2024-07-18T04:56:57.814+00:00",[],"Department-of-Electrical-and-Computer-Engineering-University-of-Minnesota-Minneapolis-USA",{"title":846},{"VI":847},"Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, USA",{"title":849},{"VI":850},"W. 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Although this practice is usually believed to be an effective way to increase the current handling capacity of the windings, the effect might not be so significant due to the unequal current distribution within parallel layers if the layers are not properly arranged for high frequencies. In this work, factors affecting the current distribution for parallel layers are identified. General rules for reducing the unbalance of current distribution among parallel layers are presented, which is very useful for practical applications.",{"EN":1006},"Problems of paralleling windings for planar transformers and 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integrated circuits,MOS devices,Voltage,CMOS technology,Charge pumps,Integrated circuit technology,Costs,Circuit topology,Power supplies,Geometry",{"EN":1102},"This paper presents high voltage (HV) NMOS based level shifters, bootstraps and charge pumps in direct and cascaded topologies, which are highly useful to implement either power integrated circuits (PICs) high-side transistor floating drives or compact inductorless DC-DC power supplies. Monolithic solutions resorting to a unique HV NMOS switching cell are very important when standard CMOS technologies are intended to be used. In fact, these floating drives are fully CMOS compatible. Even while using a dedicated PIC technology this approach is a cost effective one. Furthermore, topologies based on a unique HV NMOS can be implemented in regular and simple geometry, thus, they are prone to be easily configured by top metal layers and to pave the way to mask configurable PICs. Simulation and experimental results obtained for a level shifter, a bootstrap and a charge pump used either as voltage multiplier or as a floating voltage source are presented and discussed. These low cost solutions are highly desirable for mobile applications power management and an efficient drive either for PICs or for intelligent devices.",{"EN":1104},"Power integrated circuit drives based on HV NMOS",{"VOID":1106},"10.1109\u002FPSEC.2002.1023061",{"VOID":1108},"[\"14273121372732048395\"]","2024-04-29T17:04:57.414+00:00","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1023061\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1023061",[1113,1130,1145,1157],{"id":1114,"sortIndex":36,"researcher":26,"roles":1115,"affiliations":1116,"properties":1125},"f81e8c4f-1e14-40af-8e34-9ad8520d8e57",[698],[1117],{"id":26,"sortIndex":36,"affiliation":1118,"properties":26},{"id":1119,"createTime":1120,"updateTime":1120,"relativeEntities":1121,"slug":26,"properties":1122,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"486f35ee-26d5-4316-9cea-e49bafc5c3f5","2023-12-20T16:11:17.516+00:00",[],{"title":1123},{"VI":1124},"Centro de Pesquisas Renato Archer-CenPRA, Sao Paulo, Brazil",{"title":1126,"gsAuthor":1128},{"VI":1127},"S. 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Castro Simas",{"id":1146,"sortIndex":115,"researcher":26,"roles":1147,"affiliations":1148,"properties":1154},"e0138482-0f6f-4f8e-9ddc-944e30181c2b",[698],[1149],{"id":26,"sortIndex":36,"affiliation":1150,"properties":26},{"id":1119,"createTime":1120,"updateTime":1120,"relativeEntities":1151,"slug":26,"properties":1152,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1153},{"VI":1124},{"title":1155},{"VI":1156},"P. Tavares",{"id":1158,"sortIndex":114,"researcher":26,"roles":1159,"affiliations":1160,"properties":1166},"69a4b1e2-7016-42cf-abbe-43da8a5b4d60",[698],[1161],{"id":26,"sortIndex":36,"affiliation":1162,"properties":26},{"id":1119,"createTime":1120,"updateTime":1120,"relativeEntities":1163,"slug":26,"properties":1164,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1165},{"VI":1124},{"title":1167},{"VI":1168},"A.C. Fiore De Mattos",{"url":1110,"publisher":1170,"properties":1177},{"id":659,"createTime":660,"updateTime":660,"relativeEntities":1171,"slug":26,"properties":1172,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":1174,"manageAffiliations":1175,"indexDatabases":1176,"url":26,"thumbnailPath":26,"statistic":26,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"title":1173},{"EN":664},[],[],[],{"volume":1178,"pages":1180},{"VOID":1179},"4",{"VOID":1181},"1737-1740 vol.4",{"total":298,"publishYear":770,"statisticByYear":1183},{"2004":115,"2005":115,"2006":115,"2007":115,"2013":59,"2014":115,"2016":115,"2017":115,"2019":115,"2020":115,"2021":115,"2023":115},"2025-10-29T12:00:18.262+00:00",[1186,1189,1192,1195,1198,1201],{"id":26,"text":1187,"url":26,"identifiers":1188},"10.1109\u002FPESC.2001.954035",{"doi":1187},{"id":26,"text":1190,"url":26,"identifiers":1191},"10.1109\u002F41.681221",{"doi":1190},{"id":777,"text":1193,"url":779,"identifiers":1194},"castro simas, 2001, High Performance NMOS Active Zener and Rectifier Diodes, IEEE Industry Applications Society Annual Meeting IAS'2001 Proceedings CD ROM",{"doi":781},{"id":777,"text":1196,"url":779,"identifiers":1197},"rossi, 1995, Power MOSFETs Driving Circuits and Protection Techniques, Smart Power ICs",{"doi":781},{"id":26,"text":1199,"url":26,"identifiers":1200},"10.1109\u002F81.611263",{"doi":1199},{"id":26,"text":1202,"url":26,"identifiers":1203},"10.1109\u002F41.293881",{"doi":1202},{"id":1205,"createTime":1206,"updateTime":1207,"relativeEntities":1208,"slug":1209,"properties":1210,"entityType":689,"verifyStatus":25,"verifyTime":1221,"verifyNote":691,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"primaryUrl":1222,"fullTextUrl":1223,"authors":1224,"publicationType":755,"publisherRelationship":1264,"citationCount":111,"citationInfo":1276,"publishDate":26,"publishYear":26,"citationAnalyzeStatus":1278,"lastCitationAnalyze":1279,"indexDatabases":26,"openAccess":26,"references":1280,"isForceReanalyzing":812},"f2c6a7d2-4bc5-4871-8078-c7616a1628d0","2023-12-20T11:10:33.442+00:00","2026-05-14T07:15:38.925+00:00",[],"Industrial-implementation-of-a-controlled-sensorless-synchronous-drive-with-hard-start-conditions",{"keywords":1211,"abstract":1213,"title":1215,"doi":1217,"gsPaper":1219},{"EN":1212},"Industrial control,Sensorless control,Torque,Power system simulation,Pulse width modulation,Synchronous motors,Milling machines,Frequency,Voltage,Automatic control",{"EN":1214},"The subject of this paper is a synchronous drive of grinding ball mills 4 MW, 150 rpm, 6 kV, 50 Hz on the base of PWM CSI. The system is installed at the concentrating plant of Norilsknickel in Russia. Specific to this drive is large stalling torque-up to 125% of rated torque. This is a sensorless drive. Another specific feature is the necessity of synchronization with power system and switching to power system. The converting-regulating device of this drive isn't designed for hard work conditions. It uses simplified control algorithms. This caused the main difficulties of implementation. Simulation was performed before drive commissioning. It provided reliance in successful results of the project and expedient values for most programmable parameters. The main result was that it is possible to choose such acceleration of current vector in infra-low speed zone that provides necessary torque with suitable speed oscillations. Results of simulation were used while commissioning the drive. The drive operates successfully with settings of parameters that were defined by simulation. The main features of the drive are presented in paper.",{"EN":1216},"Industrial implementation of a controlled sensorless synchronous drive with hard start conditions",{"VOID":1218},"10.1109\u002FPSEC.2002.1022333",{"VOID":1220},"[\"7681046609399020348\"]","2024-05-03T06:53:49.226+00:00","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1022333\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1022333",[1225,1240,1252],{"id":1226,"sortIndex":115,"researcher":26,"roles":1227,"affiliations":1228,"properties":1237},"48ce76e0-bbaf-44b7-ba8f-fa412f04a61b",[698],[1229],{"id":26,"sortIndex":36,"affiliation":1230,"properties":26},{"id":1231,"createTime":1232,"updateTime":1232,"relativeEntities":1233,"slug":26,"properties":1234,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"e8bc3b1c-1110-4e0e-a01f-fb82c2a82a1d","2023-12-20T11:10:33.457+00:00",[],{"title":1235},{"VI":1236},"Rockwell Automation\u002FAllen Bradley, Moscow, Russia",{"title":1238},{"VI":1239},"D.V. Beliaev",{"id":1241,"sortIndex":114,"researcher":26,"roles":1242,"affiliations":1243,"properties":1249},"caa2da18-b896-429b-b9b9-2c096947c6ba",[698],[1244],{"id":26,"sortIndex":36,"affiliation":1245,"properties":26},{"id":1231,"createTime":1232,"updateTime":1232,"relativeEntities":1246,"slug":26,"properties":1247,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1248},{"VI":1236},{"title":1250},{"VI":1251},"A.M. Weinger",{"id":1253,"sortIndex":36,"researcher":26,"roles":1254,"affiliations":1255,"properties":1261},"5f6cb47c-7fbd-4330-8f11-5156be1fa244",[698],[1256],{"id":26,"sortIndex":36,"affiliation":1257,"properties":26},{"id":1231,"createTime":1232,"updateTime":1232,"relativeEntities":1258,"slug":26,"properties":1259,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1260},{"VI":1236},{"title":1262},{"VI":1263},"E.V. Akhmadeev",{"url":1222,"publisher":1265,"properties":1272},{"id":659,"createTime":660,"updateTime":660,"relativeEntities":1266,"slug":26,"properties":1267,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":1269,"manageAffiliations":1270,"indexDatabases":1271,"url":26,"thumbnailPath":26,"statistic":26,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"title":1268},{"EN":664},[],[],[],{"volume":1273,"pages":1274},{"VOID":766},{"VOID":1275},"1167-1171 vol.3",{"total":111,"publishYear":770,"statisticByYear":1277},{"2004":115,"2013":115,"2015":115,"2017":115},"DONE_ANALYZE_CITATION","2026-05-14T07:15:38.924+00:00",[1281,1284],{"id":26,"text":1282,"url":26,"identifiers":1283},"beliaev, 2001, Advanced models for simulation and control of electric drives, Proceedings of the IASTED Int Conference -Applied Modeling & Simulation, 218",{},{"id":26,"text":1285,"url":26,"identifiers":1286},"10.1109\u002FIAS.1988.25079",{"doi":1285},{"id":1288,"createTime":1289,"updateTime":1290,"relativeEntities":1291,"slug":1292,"properties":1293,"entityType":689,"verifyStatus":25,"verifyTime":1306,"verifyNote":691,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"primaryUrl":1307,"fullTextUrl":1308,"authors":1309,"publicationType":755,"publisherRelationship":1365,"citationCount":36,"citationInfo":1377,"publishDate":26,"publishYear":26,"citationAnalyzeStatus":1080,"lastCitationAnalyze":1379,"indexDatabases":26,"openAccess":26,"references":26,"isForceReanalyzing":812},"e241bd8f-0ee1-4ff1-80f8-36ad19d19c3f","2023-12-20T11:50:35.579+00:00","2026-06-11T19:01:13.945+00:00",[],"Single-switch-zero-voltage-switching-high-power-factor-electronic-ballast",{"references":1294,"keywords":1296,"abstract":1298,"title":1300,"doi":1302,"gsPaper":1304},{"VOID":1295},"ponce, 2000, Analysis of the Class E amplifier with two current sources used as a high-power-factor electronic ballast for fluorescent lamps, APEC, 1, 591\nlin, 1998, single-switch soft-switching electronic ballast with high input power factor, Electric Power Applications IEE Proceedings-, 145, 345, 10.1049\u002Fip-epa:19981802\ncosta, 2001, Performance analysis of electronic ballasts for compact fluorescent lamp, IEEE IAS, 238\n10.1109\u002F63.803392\n10.1109\u002FAPEC.1995.469092\n10.1109\u002F7.805450\n10.1109\u002FIECON.1998.724219\n10.1109\u002FPESC.1998.703456\nwood, 1998, Fluorescent ballast design using passive PFC and crest factor control, IEEE IAS, 2076\n10.1109\u002F28.216548",{"EN":1297},"Reactive power,Electronic ballasts,Circuit topology,Fluorescent lamps,Frequency,Voltage,Switching converters,Switches,Inverters,Power generation",{"EN":1299},"This paper introduces two modified Class E circuits to achieve low crest factor of lamp current. By integrating flyback topology with Class E converter, the modified circuits can achieve improved lamp current crest factor, and still maintain high power factor and zero-voltage-switching features in conventional Class E converter. Simulation and experimental results are presented to verify the theoretical operation.",{"EN":1301},"Single-switch zero-voltage-switching high power factor electronic ballast",{"VOID":1303},"10.1109\u002FPSEC.2002.1022547",{"VOID":1305},"[\"8313620246328905418\"]","2024-05-14T17:53:55.779+00:00","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1022547\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1022547",[1310,1326,1338,1353],{"id":1311,"sortIndex":59,"researcher":26,"roles":1312,"affiliations":1313,"properties":1323},"c42ef235-0b4d-4fdb-a3e6-187b653dcca2",[698],[1314],{"id":26,"sortIndex":36,"affiliation":1315,"properties":26},{"id":1316,"createTime":1317,"updateTime":1317,"relativeEntities":1318,"slug":1319,"properties":1320,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"7add74db-26df-4b72-b660-5a2e6c74f350","2024-04-15T23:00:39.614+00:00",[],"School-of-Electrical-Engineering-and-Computer-Science-University-of-Central-Florida-Orlando-USA",{"title":1321},{"EN":1322},"School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, USA",{"title":1324},{"VI":1325},"I. Batarseh",{"id":1327,"sortIndex":115,"researcher":26,"roles":1328,"affiliations":1329,"properties":1335},"32d48d38-fe44-4f82-bbe5-193e215034e4",[698],[1330],{"id":26,"sortIndex":36,"affiliation":1331,"properties":26},{"id":1316,"createTime":1317,"updateTime":1317,"relativeEntities":1332,"slug":1319,"properties":1333,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1334},{"EN":1322},{"title":1336},{"VI":1337},"Z. Moussaoui",{"id":1339,"sortIndex":114,"researcher":26,"roles":1340,"affiliations":1341,"properties":1350},"8d6009f5-9ae8-4a4b-9674-572d09b213b7",[698],[1342],{"id":26,"sortIndex":36,"affiliation":1343,"properties":26},{"id":1344,"createTime":1345,"updateTime":1345,"relativeEntities":1346,"slug":26,"properties":1347,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"cdda4a63-d203-419c-90e4-5b524bffe3a1","2023-12-20T11:50:35.618+00:00",[],{"title":1348},{"VI":1349},"Research Pavilion, APECOR Company, Orlando, FL, USA",{"title":1351},{"VI":1352},"Wenkai Wu",{"id":1354,"sortIndex":36,"researcher":26,"roles":1355,"affiliations":1356,"properties":1362},"c12a2b04-389d-4ccc-b483-892f8b2693a6",[698],[1357],{"id":26,"sortIndex":36,"affiliation":1358,"properties":26},{"id":1316,"createTime":1317,"updateTime":1317,"relativeEntities":1359,"slug":1319,"properties":1360,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1361},{"EN":1322},{"title":1363},{"VI":1364},"Weihong Qiu",{"url":1307,"publisher":1366,"properties":1373},{"id":659,"createTime":660,"updateTime":660,"relativeEntities":1367,"slug":26,"properties":1368,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":1370,"manageAffiliations":1371,"indexDatabases":1372,"url":26,"thumbnailPath":26,"statistic":26,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"title":1369},{"EN":664},[],[],[],{"volume":1374,"pages":1375},{"VOID":956},{"VOID":1376},"773-778 vol.2",{"total":36,"publishYear":36,"statisticByYear":1378},{},"2026-06-11T19:01:13.944+00:00",{"id":1381,"createTime":1382,"updateTime":1383,"relativeEntities":1384,"slug":1385,"properties":1386,"entityType":689,"verifyStatus":25,"verifyTime":1383,"verifyNote":691,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"primaryUrl":1397,"fullTextUrl":1398,"authors":1399,"publicationType":755,"publisherRelationship":1445,"citationCount":26,"citationInfo":26,"publishDate":26,"publishYear":26,"citationAnalyzeStatus":28,"lastCitationAnalyze":26,"indexDatabases":26,"openAccess":26,"references":26,"isForceReanalyzing":812},"1b4824c7-7585-4628-9435-de31e842799a","2023-12-20T12:54:25.822+00:00","2025-01-02T16:38:23.722+00:00",[],"New-zero-current-switching-PWM-converters-using-power-MOSFET-for-lower-power-applications",{"references":1387,"keywords":1389,"abstract":1391,"title":1393,"doi":1395},{"VOID":1388},"10.1109\u002FAPEC.1997.575738\n10.1109\u002FPESC.1993.472073\n10.1109\u002F63.817376\nmao, 1997, Improved zero-current transition converters for high-power applications, IEEE Trans Ind Applicat, 33, 1220, 10.1109\u002F28.633800\nma, 1994, New Zero-Current-Switching PWM Converters, KITE Circuit and System\u002FPower Electronics Conf, 32\n10.1109\u002F63.21867\nliu, 1986, Zero-voltage switching technique in dc-dc converters, IEEE Power Electronics Specialists Conf Rec, 58\n10.1109\u002FPESC.1985.7070935",{"EN":1390},"Zero current switching,Pulse width modulation converters,MOSFET circuits,Power MOSFET,Switches,Resonance,Switching circuits,Switching converters,RLC circuits,Inductors",{"EN":1392},"In this paper, a new ZCS-PWM DC\u002FDC power converter in which the auxiliary resonant circuit consists of minimum elements, a resonant inductor, a resonant capacitor and an auxiliary switch, and it is only activated during the main switch commutation is proposed, particularly for low-power applications. The main switch operating under ZCS, and auxiliary switch and main diode operating under ZCS or ZVS at both turn-on and turn-off, is also achieved. A 100 kHz, 60 W breadboarded boost converter has been implemented to verify the operation and performance of the proposed converter. The measured efficiency of the proposed scheme as a function of the output power was 89.35% at full load. Without the proposed scheme, the converter efficiency for the same load was 80.53%.",{"EN":1394},"New zero-current switching PWM converters using power MOSFET for lower power applications",{"VOID":1396},"10.1109\u002FPSEC.2002.1022578","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1022578\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1022578",[1400,1415,1430],{"id":1401,"sortIndex":36,"researcher":26,"roles":1402,"affiliations":1403,"properties":1412},"5c593fe0-f811-44c3-b079-7170ded60538",[698],[1404],{"id":26,"sortIndex":36,"affiliation":1405,"properties":26},{"id":1406,"createTime":1407,"updateTime":1407,"relativeEntities":1408,"slug":26,"properties":1409,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"0e355012-aafa-4724-9a9a-43a2153d17ad","2023-12-20T12:54:14.761+00:00",[],{"title":1410},{"VI":1411},"Rocket Technology Division, Korea AeroSpace Research Institute, Taejon, South Korea",{"title":1413},{"VI":1414},"Keun-Soo Ma",{"id":1416,"sortIndex":115,"researcher":26,"roles":1417,"affiliations":1418,"properties":1427},"320a05fc-4bfc-4731-b654-0a5996381d5e",[698],[1419],{"id":26,"sortIndex":36,"affiliation":1420,"properties":26},{"id":1421,"createTime":1422,"updateTime":1422,"relativeEntities":1423,"slug":26,"properties":1424,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"cb5252f1-85c3-4721-a137-10494d722b23","2023-12-20T12:54:25.841+00:00",[],{"title":1425},{"VI":1426},"Department of Information and Communication Engineering, Woosuk University, Jeonbuk, South Korea",{"title":1428},{"VI":1429},"Gyu-Bum Joung",{"id":1431,"sortIndex":114,"researcher":26,"roles":1432,"affiliations":1433,"properties":1442},"c974d063-6fe5-4547-8c8e-50a41cad8ea1",[698],[1434],{"id":26,"sortIndex":36,"affiliation":1435,"properties":26},{"id":1436,"createTime":1437,"updateTime":1437,"relativeEntities":1438,"slug":26,"properties":1439,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"e9a1408a-d86f-4705-955f-4aa3fd97a849","2023-12-20T12:54:25.849+00:00",[],{"title":1440},{"VI":1441},"Department of Electrical Engineering, Chungnam National University, Taejon, South Korea",{"title":1443},{"VI":1444},"Yang-Mo Kim",{"url":1397,"publisher":1446,"properties":1453},{"id":659,"createTime":660,"updateTime":660,"relativeEntities":1447,"slug":26,"properties":1448,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":1450,"manageAffiliations":1451,"indexDatabases":1452,"url":26,"thumbnailPath":26,"statistic":26,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"title":1449},{"EN":664},[],[],[],{"volume":1454,"pages":1455},{"VOID":956},{"VOID":1456},"955-960 vol.2",{"id":1458,"createTime":1459,"updateTime":1460,"relativeEntities":1461,"slug":1462,"properties":1463,"entityType":689,"verifyStatus":25,"verifyTime":1474,"verifyNote":691,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"primaryUrl":1475,"fullTextUrl":1476,"authors":1477,"publicationType":755,"publisherRelationship":1525,"citationCount":26,"citationInfo":26,"publishDate":26,"publishYear":26,"citationAnalyzeStatus":28,"lastCitationAnalyze":26,"indexDatabases":26,"openAccess":26,"references":26,"isForceReanalyzing":812},"e9e6f5bb-3348-4a96-86c1-66571cbfff76","2023-12-20T16:14:44.982+00:00","2024-12-11T09:55:55.714+00:00",[],"A-PWM-current-source-rectifier-with-active-damping-for-high-power-medium-voltage-applications",{"references":1464,"keywords":1466,"abstract":1468,"title":1470,"doi":1472},{"VOID":1465},"10.1109\u002FTIA.1994.350312\n10.1109\u002FAPEC.1997.575658\n10.1109\u002FIAS.1995.530599\nma, 1999, A Space Vector Modulated CSI-based Drive for Multi-motor Applications, IEEE Power Electronics Specialists Conference, 800\nhan, 1997, Analysis of Inherent Dynamic Characteristics of Current Source Type PWM Rectifier, Power Electronics and Motion Control Conference 12th International, 112\n10.1109\u002F63.844506\n10.1109\u002F63.406844\n10.1109\u002F41.661308\nwu, 1992, PWM-CSI inverter for induction motor drives, IEEE Transactions on Industry Applications, 28, 64, 10.1109\u002F28.120202",{"EN":1467},"Pulse width modulation,Rectifiers,Damping,Filters,Power system transients,Resonant frequency,Medium voltage,Impedance,Switching frequency,Space vector pulse width modulation",{"EN":1469},"A digitally implemented active damping technique is proposed for high-power, medium-voltage (2300 V to 7200 V) PWM current-source rectifiers (PWM-CSR). The rectifier requires an LC filter connected at its input terminals. The damping of the LC filter is dependent on the power system characteristics, and the resonant frequency changes with the power system impedance. Moreover the lightly damped LC filter can cause oscillations during system transients if not adequately damped. These issues are traditionally addressed at the design stage by properly choosing the filter resonant frequency. This paper proposes a damping method accounting for the limitations of the power semiconductor switching frequency (typically around 500 Hz), and limits the dependency on the power system and the design of the LC filter. The proposed active damping scheme combined with the improved space vector PWM technique can effectively solve the above mentioned problems. The concept of the active damping control is introduced, and the principle of the PWM switching pattern is discussed. Experimental results based on a 10 kVA prototype are provided. It is demonstrated that the proposed rectifier can effectively reduce the line current distortion and improve the system stability. It has the potential to protect the switching devices from over-voltage stress caused by the LC resonance as well.",{"EN":1471},"A PWM current-source rectifier with active damping for high power medium voltage applications",{"VOID":1473},"10.1109\u002FPSEC.2002.1023096","2024-12-11T09:55:55.713+00:00","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1023096\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1023096",[1478,1493,1508],{"id":1479,"sortIndex":115,"researcher":26,"roles":1480,"affiliations":1481,"properties":1490},"790f8c17-4824-4e62-8009-6a31834e91ef",[698],[1482],{"id":26,"sortIndex":36,"affiliation":1483,"properties":26},{"id":1484,"createTime":1485,"updateTime":1485,"relativeEntities":1486,"slug":26,"properties":1487,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"609c84a1-af9d-4d9a-b79f-0057d825ea8d","2023-12-20T10:07:22.174+00:00",[],{"title":1488},{"VI":1489},"Department of Electrical and Computer Engineering, Ryerson Polytechnic University, Toronto, ONT, Canada",{"title":1491},{"VI":1492},"Bin Wu",{"id":1494,"sortIndex":36,"researcher":26,"roles":1495,"affiliations":1496,"properties":1505},"c000fd89-a80f-4476-ad15-64c2f8926891",[698],[1497],{"id":26,"sortIndex":36,"affiliation":1498,"properties":26},{"id":1499,"createTime":1500,"updateTime":1500,"relativeEntities":1501,"slug":26,"properties":1502,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"48f5adda-f301-406d-83b2-cb7400c1b78c","2023-12-20T16:14:44.993+00:00",[],{"title":1503},{"VI":1504},"Medium Voltage Drives, Rockwell Automation, Cambridge, ONT, Canada",{"title":1506},{"VI":1507},"J.C. Wiseman",{"id":1509,"sortIndex":114,"researcher":26,"roles":1510,"affiliations":1511,"properties":1522},"f760aedb-f4f3-4cb5-a613-17be29e4253a",[698],[1512],{"id":26,"sortIndex":36,"affiliation":1513,"properties":26},{"id":1514,"createTime":1515,"updateTime":1516,"relativeEntities":1517,"slug":1518,"properties":1519,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"1e063a1a-e382-48fc-ba9c-d24baf9a6bf4","2023-12-19T23:15:29.401+00:00","2024-10-04T21:28:09.263+00:00",[],"Department-of-Electrical-and-Computer-Engineering-University-of-Western-Ontario-London-Ont-Canada",{"title":1520},{"VI":1521},"Department of Electrical and Computer Engineering, University of Western Ontario, London, Ont., Canada",{"title":1523},{"VI":1524},"G.S.P. Castle",{"url":1475,"publisher":1526,"properties":1533},{"id":659,"createTime":660,"updateTime":660,"relativeEntities":1527,"slug":26,"properties":1528,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":1530,"manageAffiliations":1531,"indexDatabases":1532,"url":26,"thumbnailPath":26,"statistic":26,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"title":1529},{"EN":664},[],[],[],{"volume":1534,"pages":1535},{"VOID":1179},{"VOID":1536},"1930-1934 vol.4",{"id":1538,"createTime":1539,"updateTime":1540,"relativeEntities":1541,"slug":1542,"properties":1543,"entityType":689,"verifyStatus":25,"verifyTime":1556,"verifyNote":691,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"primaryUrl":1557,"fullTextUrl":1558,"authors":1559,"publicationType":755,"publisherRelationship":1625,"citationCount":26,"citationInfo":26,"publishDate":26,"publishYear":26,"citationAnalyzeStatus":1637,"lastCitationAnalyze":1638,"indexDatabases":26,"openAccess":26,"references":26,"isForceReanalyzing":812},"e5cb77c9-c84f-4fe8-80d6-c575eb673b56","2023-12-20T11:47:17.712+00:00","2026-02-14T22:38:28.901+00:00",[],"Active-gate-control-for-snubberless-IGBTs-connected-in-series",{"references":1544,"keywords":1546,"abstract":1548,"title":1550,"doi":1552,"gsPaper":1554},{"VOID":1545},"melito, 0, Switching Balancement of Series Connected Insulated Gate Devices by Gate Control Strategy, Proc EPE'97, 4034\nsakai, 2001, IGBT Converter with Active Gate Control, National Convention Record I E E Japan, 1, 1207\nbondson, 0, ONIX 3000 an IGBT propulsion drive directl coupled to the 3 kV catenary for railway application, EPE'99, 1\n10.1109\u002FIAS.1998.730279\nnakajima, 0, Development of IEGT Series and Parallel Connection Technology for High Power Converters, Proc IPEC-Tokyo 2000, 670\nnakajima, 0, Basic Technology for High Power IGBT Converter, Proc IPEC-Tokyo 2000, 665",{"EN":1547},"Insulated gate bipolar transistors,Circuits,Clamps,Diodes,Impedance,Snubbers,Surges,Voltage control,Lighting control,Delay",{"EN":1549},"High-voltage IGBT power converters require IGBT series connection. To reduce the converter loss and simplify converter configuration, snubber circuits should be omitted. The authors have developed a technique for snubberless IGBT series connection by means of active-gate-control. Under the developed active-gate-control, the gate-voltage are set to increase with collector-voltage of each IGBT. The increased gate-voltage decreases IGBT impedance and limits the collector-voltage. The collector-voltages of the IGBTs connected in series can be balanced by clamping the collector-voltage of each single IGBT independently. Under the active-gate-control, the collector-voltages are directly converted to gate-voltage references, and the gate is charged before the collector-voltage reaches the clamping voltage. So the active-gate-control is so fast that the surge voltages at the recovery state can be clamped. Under the control the clamping voltage increases with increasing turn-off current and it is saturated at larger currents. By increasing the clamping voltage with increasing turn-off current, the increase of turn-off loss caused by collector-voltage clamping can be limited. Moreover saturating the clamping voltage at further higher currents prevents overvoltage failure.",{"EN":1551},"Active-gate-control for snubberless IGBTs connected in series",{"VOID":1553},"10.1109\u002FPSEC.2002.1022520",{"VOID":1555},"[]","2024-05-12T06:29:53.022+00:00","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1022520\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1022520",[1560,1577,1589,1601,1613],{"id":1561,"sortIndex":36,"researcher":26,"roles":1562,"affiliations":1563,"properties":1574},"11cbd159-4bf5-4566-b5bf-699c9cd38dd4",[698],[1564],{"id":26,"sortIndex":36,"affiliation":1565,"properties":26},{"id":1566,"createTime":1567,"updateTime":1568,"relativeEntities":1569,"slug":1570,"properties":1571,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"28bb0f22-a229-4914-a42e-6e8d3f00d8b6","2023-12-20T11:47:17.740+00:00","2025-01-26T02:59:56.754+00:00",[],"Hitachi-and-Limited-Hitachi-Ibaraki-Japan",{"title":1572},{"VI":1573},"Hitachi and Limited, Hitachi, Ibaraki, Japan",{"title":1575},{"VI":1576},"S. Katoh",{"id":1578,"sortIndex":111,"researcher":26,"roles":1579,"affiliations":1580,"properties":1586},"a7e64cdc-0fa9-4143-90dd-04af77da98fa",[698],[1581],{"id":26,"sortIndex":36,"affiliation":1582,"properties":26},{"id":1566,"createTime":1567,"updateTime":1568,"relativeEntities":1583,"slug":1570,"properties":1584,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1585},{"VI":1573},{"title":1587},{"VI":1588},"Y. Eguchi",{"id":1590,"sortIndex":115,"researcher":26,"roles":1591,"affiliations":1592,"properties":1598},"38a55c54-dca8-4c4d-89ab-a01138947111",[698],[1593],{"id":26,"sortIndex":36,"affiliation":1594,"properties":26},{"id":1566,"createTime":1567,"updateTime":1568,"relativeEntities":1595,"slug":1570,"properties":1596,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1597},{"VI":1573},{"title":1599},{"VI":1600},"S. Ueda",{"id":1602,"sortIndex":59,"researcher":26,"roles":1603,"affiliations":1604,"properties":1610},"f6675b91-0664-4ba1-bf08-8f8a6297b8b1",[698],[1605],{"id":26,"sortIndex":36,"affiliation":1606,"properties":26},{"id":1566,"createTime":1567,"updateTime":1568,"relativeEntities":1607,"slug":1570,"properties":1608,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1609},{"VI":1573},{"title":1611},{"VI":1612},"T. Ishida",{"id":1614,"sortIndex":114,"researcher":26,"roles":1615,"affiliations":1616,"properties":1622},"c5662ba3-6f4b-406d-8428-fa627bbfb1b4",[698],[1617],{"id":26,"sortIndex":36,"affiliation":1618,"properties":26},{"id":1566,"createTime":1567,"updateTime":1568,"relativeEntities":1619,"slug":1570,"properties":1620,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1621},{"VI":1573},{"title":1623},{"VI":1624},"H. Sakai",{"url":1557,"publisher":1626,"properties":1633},{"id":659,"createTime":660,"updateTime":660,"relativeEntities":1627,"slug":26,"properties":1628,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":1630,"manageAffiliations":1631,"indexDatabases":1632,"url":26,"thumbnailPath":26,"statistic":26,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"title":1629},{"EN":664},[],[],[],{"volume":1634,"pages":1635},{"VOID":956},{"VOID":1636},"609-613 vol.2","ERROR_IN_GET_PLATFORM_ID","2026-02-14T22:38:28.900+00:00",{"id":1640,"createTime":1641,"updateTime":1642,"relativeEntities":1643,"slug":1644,"properties":1645,"entityType":689,"verifyStatus":25,"verifyTime":1642,"verifyNote":691,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"primaryUrl":1656,"fullTextUrl":1657,"authors":1658,"publicationType":755,"publisherRelationship":1710,"citationCount":26,"citationInfo":26,"publishDate":26,"publishYear":26,"citationAnalyzeStatus":28,"lastCitationAnalyze":26,"indexDatabases":26,"openAccess":26,"references":26,"isForceReanalyzing":812},"2531e5a0-8b0e-4a99-8d27-3e3184292937","2023-12-20T16:16:29.178+00:00","2024-12-22T00:52:00.482+00:00",[],"Conducted-EMI-simulation-tool",{"references":1646,"keywords":1648,"abstract":1650,"title":1652,"doi":1654},{"VOID":1647},"albach, 1986, PESC'86, 203\n1999, Specification for radio disturbance and immunity measuring apparatus and methods – Part 1: Radio disturbance and immunity measuring apparatus, IEC CISPR 16-1\nsimonetti, 1992, IECON, 92, 283\nmagnus, 2001, Low Cost Conducted EMI Simulation Tool\ndos reis, 0, EPE 95, 3.259\npackard, 1994, EMC In The European Environment - Seminar, PESC'94, 1117",{"EN":1649},"Electromagnetic interference,IEC standards,Harmonic analysis,Reactive power,Computational modeling,Software standards,Frequency modulation,Product development,Costs,Power harmonic filters",{"EN":1651},"In this paper we present a simulation tool that allows us to determine the conducted electromagnetic interference (EMI), generated for the basic PFP converters (Cuk, buck, boost, buck-boost, Sepic, and Zeta converters). Using this Software, we can determine full EMI spectrum in dB\u002F\u002Fspl mu\u002FV in accordance with the IEC CISPR 16-1 standard. Therefore, this can be an useful aid for power electronics designers.",{"EN":1653},"Conducted EMI simulation tool",{"VOID":1655},"10.1109\u002FPSEC.2002.1023113","https:\u002F\u002Fieeexplore.ieee.org\u002Fabstract\u002Fdocument\u002F1023113\u002F","https:\u002F\u002Fieeexplore.ieee.org\u002Fstamp\u002Fstamp.jsp?tp=&arnumber=1023113",[1659,1674,1686,1698],{"id":1660,"sortIndex":115,"researcher":26,"roles":1661,"affiliations":1662,"properties":1671},"65c16359-a4a0-4a39-8d7c-a7e004a00593",[698],[1663],{"id":26,"sortIndex":36,"affiliation":1664,"properties":26},{"id":1665,"createTime":1666,"updateTime":1666,"relativeEntities":1667,"slug":26,"properties":1668,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},"27d27e4f-68cb-4d2f-b972-c1b4b471645f","2023-12-20T16:16:29.195+00:00",[],{"title":1669},{"VI":1670},"Faculdade de Engenharia, Pontifícia Universidade Católica do Rio Grande do Sul, Porto Alegre, RS, CEP, Brazil",{"title":1672},{"VI":1673},"J.C.M. de Lima",{"id":1675,"sortIndex":59,"researcher":26,"roles":1676,"affiliations":1677,"properties":1683},"3e0e751e-72ae-4e5a-8e03-50615acd4f7c",[698],[1678],{"id":26,"sortIndex":36,"affiliation":1679,"properties":26},{"id":1665,"createTime":1666,"updateTime":1666,"relativeEntities":1680,"slug":26,"properties":1681,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1682},{"VI":1670},{"title":1684},{"VI":1685},"E.F. Magnus",{"id":1687,"sortIndex":36,"researcher":26,"roles":1688,"affiliations":1689,"properties":1695},"e9dfc651-79cb-4e24-b3a7-bc8f21b33166",[698],[1690],{"id":26,"sortIndex":36,"affiliation":1691,"properties":26},{"id":1665,"createTime":1666,"updateTime":1666,"relativeEntities":1692,"slug":26,"properties":1693,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1694},{"VI":1670},{"title":1696},{"VI":1697},"F.S. Dos Reis",{"id":1699,"sortIndex":114,"researcher":26,"roles":1700,"affiliations":1701,"properties":1707},"993aeaa2-e440-45a5-8d1e-f525a36c630a",[698],[1702],{"id":26,"sortIndex":36,"affiliation":1703,"properties":26},{"id":1665,"createTime":1666,"updateTime":1666,"relativeEntities":1704,"slug":26,"properties":1705,"entityType":98,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36},[],{"title":1706},{"VI":1670},{"title":1708},{"VI":1709},"V.M. Canalli",{"url":1656,"publisher":1711,"properties":1718},{"id":659,"createTime":660,"updateTime":660,"relativeEntities":1712,"slug":26,"properties":1713,"entityType":24,"verifyStatus":28,"verifyTime":26,"verifyNote":26,"syncStatus":28,"languages":26,"translateLanguages":26,"viewCount":36,"subjectFields":1715,"manageAffiliations":1716,"indexDatabases":1717,"url":26,"thumbnailPath":26,"statistic":26,"gsStatistic":26,"type":26,"analyzePriority":26},[],{"title":1714},{"EN":664},[],[],[],{"volume":1719,"pages":1720},{"VOID":1179},{"VOID":1721},"2033-2038 vol.4"]