Bridging fault modeling and simulation for deep submicron CMOS ICs

M. Favalli1, M. Dalpasso2
1Department of Engineering, University of Ferrara, Ferrara, Italy
2Department of Electronic Engineering, University of Padova, Padova, Italy

Tóm tắt

Testing bridging faults in deep submicron CMOS digital ICs faces new problems because of pushing the technology limits. The growing dispersion of process parameters makes it hard to use conventional bridging fault models for high-quality testing. A new fault model is proposed to account for bridging faults in a way that is independent of electrical parameters and provides a significant coverage metric. Conditions are defined to ensure that (under steady-state conditions) either a fault is detected by a test sequence or it will not give rise to errors for any other input, independently of the actual values of IC parameters. Such a fault model has been implemented in a simulator and validated over combinational benchmarks.

Từ khóa

#Semiconductor device modeling #Circuit faults #Integrated circuit testing #Logic testing #CMOS technology #Electrical fault detection #Fault detection #CMOS logic circuits #Performance evaluation #Logic devices

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