Textured monocrystalline thin‐film Si cells from the porous silicon (PSI) process

Progress in Photovoltaics: Research and Applications - Tập 9 Số 3 - Trang 217-221 - 2001
Rolf Brendel1, R. Auer1, H. Artmann2
1Bavarian Center for Applied Energy Research (ZAE Bayern), Am Weichselgarten 7, D-91058 Erlangen, Germany
2Robert Bosch GmbH, Zentralbereich Forschung und Vorausentwicklung, Abteilung FV/FLD, Robert-Bosch-Platz 1, D-70839 Gerlingen-Schillerhöhe, Germany

Tóm tắt

AbstractWe have fabricated a textured monocrystalline Si solar cell with a thickness of 15·5 μm and a confirmed efficiency of 12·2% using porous silicon (PSI) for layer transfer. The PSI process avoids photolithography and high‐temperature oxidation. The cell has a surface that is textured with randomly positioned inverted pyramids for light trapping. The device does not yet fully exploit the light‐trapping capability of this film shape, owing to a small back‐surface reflectance. Copyright © 2001 John Wiley & Sons, Ltd.

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